KR100693767B1 - El 디스플레이 장치 및 전자 기기 - Google Patents

El 디스플레이 장치 및 전자 기기 Download PDF

Info

Publication number
KR100693767B1
KR100693767B1 KR1020000071504A KR20000071504A KR100693767B1 KR 100693767 B1 KR100693767 B1 KR 100693767B1 KR 1020000071504 A KR1020000071504 A KR 1020000071504A KR 20000071504 A KR20000071504 A KR 20000071504A KR 100693767 B1 KR100693767 B1 KR 100693767B1
Authority
KR
South Korea
Prior art keywords
tft
current control
insulating film
display device
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020000071504A
Other languages
English (en)
Korean (ko)
Other versions
KR20010052008A (ko
Inventor
이누카이카주타카
코야마준
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20010052008A publication Critical patent/KR20010052008A/ko
Application granted granted Critical
Publication of KR100693767B1 publication Critical patent/KR100693767B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3258Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the voltage across the light-emitting element
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3266Details of drivers for scan electrodes
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3275Details of drivers for data electrodes
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3275Details of drivers for data electrodes
    • G09G3/3291Details of drivers for data electrodes in which the data driver supplies a variable data voltage for setting the current through, or the voltage across, the light-emitting elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/6704Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/6704Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H10D30/6717Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions the source and the drain regions being asymmetrical
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/6704Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H10D30/6719Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions having significant overlap between the lightly-doped drains and the gate electrodes, e.g. gate-overlapped LDD [GOLDD] TFTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/6729Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733Multi-gate TFTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/674Thin-film transistors [TFT] characterised by the active materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/04Structural and physical details of display devices
    • G09G2300/0421Structural details of the set of electrodes
    • G09G2300/0426Layout of electrodes and connections
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/04Structural and physical details of display devices
    • G09G2300/0439Pixel structures
    • G09G2300/0465Improved aperture ratio, e.g. by size reduction of the pixel circuit, e.g. for improving the pixel density or the maximum displayable luminance or brightness
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/08Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809Several active elements per pixel in active matrix panels
    • G09G2300/0842Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/08Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809Several active elements per pixel in active matrix panels
    • G09G2300/0842Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G09G2300/0847Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor being a dynamic memory without any storage capacitor, i.e. with use of parasitic capacitances as storage elements
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/08Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809Several active elements per pixel in active matrix panels
    • G09G2300/0842Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G09G2300/0861Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes
    • G09G2300/0866Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes by means of changes in the pixel supply voltage
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00Command of the display device
    • G09G2310/02Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264Details of driving circuits
    • G09G2310/0283Arrangement of drivers for different directions of scanning
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00Control of display operating conditions
    • G09G2320/02Improving the quality of display appearance
    • G09G2320/0233Improving the luminance or brightness uniformity across the screen
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00Control of display operating conditions
    • G09G2320/04Maintaining the quality of display appearance
    • G09G2320/043Preventing or counteracting the effects of ageing
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/2007Display of intermediate tones
    • G09G3/2011Display of intermediate tones by amplitude modulation
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/2007Display of intermediate tones
    • G09G3/2018Display of intermediate tones by time modulation using two or more time intervals
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/2007Display of intermediate tones
    • G09G3/2018Display of intermediate tones by time modulation using two or more time intervals
    • G09G3/2022Display of intermediate tones by time modulation using two or more time intervals using sub-frames
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04MTELEPHONIC COMMUNICATION
    • H04M1/00Substation equipment, e.g. for use by subscribers
    • H04M1/02Constructional features of telephone sets
    • H04M1/22Illumination; Arrangements for improving the visibility of characters on dials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/121Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Control Of El Displays (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020000071504A 1999-11-29 2000-11-29 El 디스플레이 장치 및 전자 기기 Expired - Fee Related KR100693767B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP99-338845 1999-11-29
JP33884599 1999-11-29
JP2000-302979 2000-10-02
JP2000302979A JP4727029B2 (ja) 1999-11-29 2000-10-02 El表示装置、電気器具及びel表示装置用の半導体素子基板

Publications (2)

Publication Number Publication Date
KR20010052008A KR20010052008A (ko) 2001-06-25
KR100693767B1 true KR100693767B1 (ko) 2007-03-12

Family

ID=26576236

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000071504A Expired - Fee Related KR100693767B1 (ko) 1999-11-29 2000-11-29 El 디스플레이 장치 및 전자 기기

Country Status (6)

Country Link
US (2) US6680577B1 (enExample)
EP (2) EP1103947A3 (enExample)
JP (1) JP4727029B2 (enExample)
KR (1) KR100693767B1 (enExample)
CN (1) CN1252665C (enExample)
TW (1) TW483178B (enExample)

Families Citing this family (110)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3126661B2 (ja) * 1996-06-25 2001-01-22 株式会社半導体エネルギー研究所 液晶表示装置
JP4906145B2 (ja) * 1999-11-29 2012-03-28 株式会社半導体エネルギー研究所 El表示装置
JP4727029B2 (ja) * 1999-11-29 2011-07-20 株式会社半導体エネルギー研究所 El表示装置、電気器具及びel表示装置用の半導体素子基板
TW536836B (en) * 2000-05-22 2003-06-11 Semiconductor Energy Lab Light emitting device and electrical appliance
JP4683766B2 (ja) * 2000-05-22 2011-05-18 株式会社半導体エネルギー研究所 アクティブマトリクス型発光装置
JP3892650B2 (ja) 2000-07-25 2007-03-14 株式会社日立製作所 液晶表示装置
JP4766628B2 (ja) * 2000-07-31 2011-09-07 株式会社半導体エネルギー研究所 表示装置および表示装置の製造方法
JP3628997B2 (ja) * 2000-11-27 2005-03-16 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置の製造方法
SG111923A1 (en) 2000-12-21 2005-06-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
TWI221645B (en) * 2001-01-19 2004-10-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
US7115453B2 (en) * 2001-01-29 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP2002231627A (ja) * 2001-01-30 2002-08-16 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
US7141822B2 (en) * 2001-02-09 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US7569849B2 (en) * 2001-02-16 2009-08-04 Ignis Innovation Inc. Pixel driver circuit and pixel circuit having the pixel driver circuit
JP4993810B2 (ja) * 2001-02-16 2012-08-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6720198B2 (en) * 2001-02-19 2004-04-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
US7052943B2 (en) * 2001-03-16 2006-05-30 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP4718700B2 (ja) 2001-03-16 2011-07-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7301279B2 (en) * 2001-03-19 2007-11-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting apparatus and method of manufacturing the same
US6812081B2 (en) * 2001-03-26 2004-11-02 Semiconductor Energy Laboratory Co.,.Ltd. Method of manufacturing semiconductor device
KR100437765B1 (ko) * 2001-06-15 2004-06-26 엘지전자 주식회사 고온용 기판을 이용한 박막트랜지스터 제조방법과 이를 이용한 표시장치의 제조방법
US7211828B2 (en) * 2001-06-20 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic apparatus
TW548860B (en) 2001-06-20 2003-08-21 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
JP2003022057A (ja) * 2001-07-09 2003-01-24 Alps Electric Co Ltd 画像信号駆動回路および画像信号駆動回路を備えた表示装置
TWI221268B (en) * 2001-09-07 2004-09-21 Semiconductor Energy Lab Light emitting device and method of driving the same
US7317205B2 (en) * 2001-09-10 2008-01-08 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing a semiconductor device
JP3810725B2 (ja) 2001-09-21 2006-08-16 株式会社半導体エネルギー研究所 発光装置及び電子機器
JP2003173163A (ja) * 2001-09-27 2003-06-20 Sharp Corp 表示装置
US6777885B2 (en) * 2001-10-12 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Drive circuit, display device using the drive circuit and electronic apparatus using the display device
CN101009322B (zh) * 2001-11-09 2012-06-27 株式会社半导体能源研究所 发光器件
JP4149168B2 (ja) 2001-11-09 2008-09-10 株式会社半導体エネルギー研究所 発光装置
KR100656490B1 (ko) * 2001-11-26 2006-12-12 삼성에스디아이 주식회사 풀칼라 유기전계 발광표시소자 및 그의 제조방법
US8153184B2 (en) 2001-11-26 2012-04-10 Samsung Mobile Display Co., Ltd. Organic EL display device and method of manufacturing the same
US6734457B2 (en) 2001-11-27 2004-05-11 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
TWI264121B (en) * 2001-11-30 2006-10-11 Semiconductor Energy Lab A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device
JP4265210B2 (ja) * 2001-12-17 2009-05-20 セイコーエプソン株式会社 有機el装置及び電子機器
CN1209662C (zh) * 2001-12-17 2005-07-06 精工爱普生株式会社 显示装置及电子机器
US7038377B2 (en) * 2002-01-16 2006-05-02 Seiko Epson Corporation Display device with a narrow frame
US6909240B2 (en) 2002-01-18 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP3723507B2 (ja) * 2002-01-29 2005-12-07 三洋電機株式会社 駆動回路
JP4027103B2 (ja) * 2002-01-31 2007-12-26 三洋電機株式会社 デジタル駆動型表示装置
JP2003308030A (ja) * 2002-02-18 2003-10-31 Sanyo Electric Co Ltd 表示装置
TWI285515B (en) * 2002-02-22 2007-08-11 Semiconductor Energy Lab Light-emitting device and method of manufacturing the same, and method of operating manufacturing apparatus
US7038239B2 (en) 2002-04-09 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
JP3989761B2 (ja) 2002-04-09 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
JP3989763B2 (ja) 2002-04-15 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
KR100968496B1 (ko) 2002-04-15 2010-07-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 그 제조방법
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
JP4530083B2 (ja) * 2002-06-07 2010-08-25 セイコーエプソン株式会社 電気光学装置及び電子機器
JP4128045B2 (ja) * 2002-07-26 2008-07-30 三洋電機株式会社 有機elパネル
GB0218172D0 (en) * 2002-08-06 2002-09-11 Koninkl Philips Electronics Nv Electroluminescent display device
KR101016164B1 (ko) 2002-10-09 2011-02-17 이데미쓰 고산 가부시키가이샤 유기 전기발광 소자
US7374976B2 (en) * 2002-11-22 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating thin film transistor
JP4566528B2 (ja) * 2002-12-05 2010-10-20 シャープ株式会社 表示装置
WO2004053816A1 (ja) * 2002-12-10 2004-06-24 Semiconductor Energy Laboratory Co., Ltd. 発光装置およびその作製方法
US7235920B2 (en) * 2003-02-24 2007-06-26 Osram Opto Semiconductors Gmbh Display device and method of its manufacture
CA2419704A1 (en) * 2003-02-24 2004-08-24 Ignis Innovation Inc. Method of manufacturing a pixel with organic light-emitting diode
JP2004264634A (ja) * 2003-03-03 2004-09-24 Sanyo Electric Co Ltd エレクトロルミネッセンス表示装置
US7057208B2 (en) 2003-03-25 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
JP4484451B2 (ja) * 2003-05-16 2010-06-16 奇美電子股▲ふん▼有限公司 画像表示装置
JP2005004183A (ja) * 2003-05-20 2005-01-06 Advanced Lcd Technologies Development Center Co Ltd 発光型表示装置
US7291967B2 (en) * 2003-08-29 2007-11-06 Semiconductor Energy Laboratory Co., Ltd. Light emitting element including a barrier layer and a manufacturing method thereof
US7492090B2 (en) * 2003-09-19 2009-02-17 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
CA2443206A1 (en) 2003-09-23 2005-03-23 Ignis Innovation Inc. Amoled display backplanes - pixel driver circuits, array architecture, and external compensation
US7205716B2 (en) 2003-10-20 2007-04-17 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US7902747B2 (en) 2003-10-21 2011-03-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device having a thin insulating film made of nitrogen and silicon and an electrode made of conductive transparent oxide and silicon dioxide
JP4841831B2 (ja) * 2003-12-02 2011-12-21 株式会社半導体エネルギー研究所 表示装置及びその駆動方法
US7825021B2 (en) * 2004-01-16 2010-11-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US7245297B2 (en) * 2004-05-22 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
KR100573149B1 (ko) * 2004-05-29 2006-04-24 삼성에스디아이 주식회사 전계 발광 디스플레이 장치 및 이의 제조 방법
CA2472671A1 (en) 2004-06-29 2005-12-29 Ignis Innovation Inc. Voltage-programming scheme for current-driven amoled displays
US8194006B2 (en) 2004-08-23 2012-06-05 Semiconductor Energy Laboratory Co., Ltd. Display device, driving method of the same, and electronic device comprising monitoring elements
JP2006091860A (ja) * 2004-08-23 2006-04-06 Semiconductor Energy Lab Co Ltd 表示装置及びその駆動方法並びに電子機器
US8148895B2 (en) 2004-10-01 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the same
CA2490858A1 (en) 2004-12-07 2006-06-07 Ignis Innovation Inc. Driving method for compensated voltage-programming of amoled displays
KR101107252B1 (ko) * 2004-12-31 2012-01-19 엘지디스플레이 주식회사 일렉트로-루미네센스 표시 패널의 박막 트랜지스터 기판및 그 제조 방법
CA2495726A1 (en) 2005-01-28 2006-07-28 Ignis Innovation Inc. Locally referenced voltage programmed pixel for amoled displays
US7948171B2 (en) * 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
KR100639007B1 (ko) * 2005-05-26 2006-10-25 삼성에스디아이 주식회사 발광표시장치 및 발광 표시장치 구동방법
JP2007184467A (ja) * 2006-01-10 2007-07-19 Fujifilm Corp 固体撮像素子
EP2924498A1 (en) * 2006-04-06 2015-09-30 Semiconductor Energy Laboratory Co, Ltd. Liquid crystal desplay device, semiconductor device, and electronic appliance
CN101501748B (zh) 2006-04-19 2012-12-05 伊格尼斯创新有限公司 有源矩阵显示器的稳定驱动设计
US7863612B2 (en) 2006-07-21 2011-01-04 Semiconductor Energy Laboratory Co., Ltd. Display device and semiconductor device
KR101933841B1 (ko) * 2009-10-16 2018-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 이를 구비한 전자 장치
US8283967B2 (en) 2009-11-12 2012-10-09 Ignis Innovation Inc. Stable current source for system integration to display substrate
US9606607B2 (en) 2011-05-17 2017-03-28 Ignis Innovation Inc. Systems and methods for display systems with dynamic power control
CN109272933A (zh) 2011-05-17 2019-01-25 伊格尼斯创新公司 操作显示器的方法
KR101980396B1 (ko) 2011-07-25 2019-05-20 닛산 가가쿠 가부시키가이샤 수소화 처리방법 및 수소화 처리장치
US9070775B2 (en) 2011-08-03 2015-06-30 Ignis Innovations Inc. Thin film transistor
US8901579B2 (en) 2011-08-03 2014-12-02 Ignis Innovation Inc. Organic light emitting diode and method of manufacturing
US10089924B2 (en) 2011-11-29 2018-10-02 Ignis Innovation Inc. Structural and low-frequency non-uniformity compensation
US9385169B2 (en) 2011-11-29 2016-07-05 Ignis Innovation Inc. Multi-functional active matrix organic light-emitting diode display
WO2014129519A1 (en) 2013-02-20 2014-08-28 Semiconductor Energy Laboratory Co., Ltd. Peeling method, semiconductor device, and peeling apparatus
US9721505B2 (en) 2013-03-08 2017-08-01 Ignis Innovation Inc. Pixel circuits for AMOLED displays
WO2014140992A1 (en) 2013-03-15 2014-09-18 Ignis Innovation Inc. Dynamic adjustment of touch resolutions on an amoled display
WO2015087192A1 (en) 2013-12-12 2015-06-18 Semiconductor Energy Laboratory Co., Ltd. Peeling method and peeling apparatus
US9502653B2 (en) 2013-12-25 2016-11-22 Ignis Innovation Inc. Electrode contacts
US10997901B2 (en) 2014-02-28 2021-05-04 Ignis Innovation Inc. Display system
US10176752B2 (en) 2014-03-24 2019-01-08 Ignis Innovation Inc. Integrated gate driver
CA2872563A1 (en) 2014-11-28 2016-05-28 Ignis Innovation Inc. High pixel density array architecture
CN104952884B (zh) * 2015-05-13 2019-11-26 深圳市华星光电技术有限公司 Amoled背板结构及其制作方法
CA2898282A1 (en) 2015-07-24 2017-01-24 Ignis Innovation Inc. Hybrid calibration of current sources for current biased voltage progra mmed (cbvp) displays
US10657895B2 (en) 2015-07-24 2020-05-19 Ignis Innovation Inc. Pixels and reference circuits and timing techniques
US10373554B2 (en) 2015-07-24 2019-08-06 Ignis Innovation Inc. Pixels and reference circuits and timing techniques
CA2909813A1 (en) 2015-10-26 2017-04-26 Ignis Innovation Inc High ppi pattern orientation
JP6785848B2 (ja) * 2015-12-30 2020-11-18 マトソン テクノロジー インコーポレイテッドMattson Technology, Inc. ミリ秒アニールシステムのためのガスフロー制御
DE102017222059A1 (de) 2016-12-06 2018-06-07 Ignis Innovation Inc. Pixelschaltungen zur Minderung von Hysterese
US10714018B2 (en) 2017-05-17 2020-07-14 Ignis Innovation Inc. System and method for loading image correction data for displays
US11025899B2 (en) 2017-08-11 2021-06-01 Ignis Innovation Inc. Optical correction systems and methods for correcting non-uniformity of emissive display devices
US10971078B2 (en) 2018-02-12 2021-04-06 Ignis Innovation Inc. Pixel measurement through data line

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10161564A (ja) * 1996-11-28 1998-06-19 Casio Comput Co Ltd 表示装置
JPH11224604A (ja) * 1998-02-04 1999-08-17 Ise Electronics Corp 蛍光表示装置およびその製造方法
JPH11231805A (ja) * 1998-02-10 1999-08-27 Sanyo Electric Co Ltd 表示装置

Family Cites Families (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4356429A (en) 1980-07-17 1982-10-26 Eastman Kodak Company Organic electroluminescent cell
US4539507A (en) 1983-03-25 1985-09-03 Eastman Kodak Company Organic electroluminescent devices having improved power conversion efficiencies
JPS6290260A (ja) 1985-10-16 1987-04-24 Tdk Corp サ−マルヘツド用耐摩耗性保護膜
US4720432A (en) 1987-02-11 1988-01-19 Eastman Kodak Company Electroluminescent device with organic luminescent medium
US4885211A (en) 1987-02-11 1989-12-05 Eastman Kodak Company Electroluminescent device with improved cathode
US4769292A (en) 1987-03-02 1988-09-06 Eastman Kodak Company Electroluminescent device with modified thin film luminescent zone
JP2524827B2 (ja) 1988-11-29 1996-08-14 財団法人生産開発科学研究所 積層薄膜体及びその製造法
US4950950A (en) 1989-05-18 1990-08-21 Eastman Kodak Company Electroluminescent device with silazane-containing luminescent zone
US5059862A (en) 1990-07-26 1991-10-22 Eastman Kodak Company Electroluminescent device with improved cathode
US5073446A (en) 1990-07-26 1991-12-17 Eastman Kodak Company Organic electroluminescent device with stabilizing fused metal particle cathode
US5047687A (en) 1990-07-26 1991-09-10 Eastman Kodak Company Organic electroluminescent device with stabilized cathode
US5059861A (en) 1990-07-26 1991-10-22 Eastman Kodak Company Organic electroluminescent device with stabilizing cathode capping layer
US5061617A (en) 1990-12-07 1991-10-29 Eastman Kodak Company Process for the preparation of high chloride tabular grain emulsions
JPH04279033A (ja) * 1991-03-07 1992-10-05 Sharp Corp 薄膜トランジスタの製造方法
US5151629A (en) 1991-08-01 1992-09-29 Eastman Kodak Company Blue emitting internal junction organic electroluminescent device (I)
US5294869A (en) 1991-12-30 1994-03-15 Eastman Kodak Company Organic electroluminescent multicolor image display device
US5294870A (en) 1991-12-30 1994-03-15 Eastman Kodak Company Organic electroluminescent multicolor image display device
JP3128939B2 (ja) * 1992-03-27 2001-01-29 ソニー株式会社 薄膜トランジスタ
JP3173135B2 (ja) * 1992-06-24 2001-06-04 セイコーエプソン株式会社 薄膜半導体装置及びその製造方法
EP0602250B1 (en) * 1992-06-24 1999-08-25 Seiko Epson Corporation Thin film transistor, display device, and method for manufacturing thin film transistor
JP3338481B2 (ja) * 1992-09-08 2002-10-28 ソニー株式会社 液晶表示装置
JP3941120B2 (ja) * 1993-02-10 2007-07-04 セイコーエプソン株式会社 アクティブマトリクス基板の製造方法、薄膜トランジスタの製造方法及び薄膜トランジスタ
DE4417154C2 (de) * 1993-05-20 1998-07-02 Gold Star Electronics Dünnfilmtransistor und Verfahren zu deren Herstellung
US6773971B1 (en) * 1994-07-14 2004-08-10 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having lightly-doped drain (LDD) regions
JP2639355B2 (ja) 1994-09-01 1997-08-13 日本電気株式会社 半導体装置およびその製造方法
JP3254335B2 (ja) 1994-09-08 2002-02-04 出光興産株式会社 有機el素子の封止方法および有機el素子
DE69535970D1 (de) 1994-12-14 2009-08-06 Eastman Kodak Co Elektrolumineszente Vorrichtung mit einer organischen elektrolumineszenten Schicht
JP3292657B2 (ja) * 1995-04-10 2002-06-17 キヤノン株式会社 薄膜トランジスタ及びそれを用いた液晶表示装置の製造法
JPH0945930A (ja) * 1995-07-28 1997-02-14 Sony Corp 薄膜トランジスタ及びその製造方法
JP3834086B2 (ja) * 1995-11-06 2006-10-18 シャープ株式会社 マトリックス型表示装置およびその駆動方法
JPH09148066A (ja) 1995-11-24 1997-06-06 Pioneer Electron Corp 有機el素子
US5814834A (en) * 1995-12-04 1998-09-29 Semiconductor Energy Laboratory Co. Thin film semiconductor device
KR100219117B1 (ko) * 1996-08-24 1999-09-01 구자홍 박막트랜지스터 액정표시장치 및 그 제조방법
WO1998013811A1 (fr) * 1996-09-26 1998-04-02 Seiko Epson Corporation Dispositif d'affichage
KR100226548B1 (ko) 1996-12-24 1999-10-15 김영환 웨이퍼 습식 처리 장치
JPH10200125A (ja) * 1997-01-10 1998-07-31 Sony Corp 薄膜トランジスタ及びその製造方法
JPH10200121A (ja) * 1997-01-10 1998-07-31 Toshiba Corp 薄膜トランジスタ基板の製造方法
TW386238B (en) * 1997-01-20 2000-04-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP3777706B2 (ja) * 1997-02-21 2006-05-24 ソニー株式会社 表示装置
JP4401448B2 (ja) * 1997-02-24 2010-01-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3032801B2 (ja) 1997-03-03 2000-04-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
DE29706768U1 (de) * 1997-04-15 1997-11-13 EMTEC Magnetics GmbH, 67059 Ludwigshafen Vorrichtung zur Bearbeitung von Magnetbändern
JP3541625B2 (ja) * 1997-07-02 2004-07-14 セイコーエプソン株式会社 表示装置及びアクティブマトリクス基板
JP3282582B2 (ja) * 1998-04-21 2002-05-13 日本電気株式会社 トップゲート型薄膜トランジスタ及びその製造方法
US6274887B1 (en) * 1998-11-02 2001-08-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method therefor
US6420758B1 (en) * 1998-11-17 2002-07-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an impurity region overlapping a gate electrode
US6489952B1 (en) * 1998-11-17 2002-12-03 Semiconductor Energy Laboratory Co., Ltd. Active matrix type semiconductor display device
US6365917B1 (en) * 1998-11-25 2002-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6259138B1 (en) * 1998-12-18 2001-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having multilayered gate electrode and impurity regions overlapping therewith
US6512504B1 (en) * 1999-04-27 2003-01-28 Semiconductor Energy Laborayory Co., Ltd. Electronic device and electronic apparatus
TW540251B (en) * 1999-09-24 2003-07-01 Semiconductor Energy Lab EL display device and method for driving the same
US6384427B1 (en) * 1999-10-29 2002-05-07 Semiconductor Energy Laboratory Co., Ltd. Electronic device
JP4727029B2 (ja) * 1999-11-29 2011-07-20 株式会社半導体エネルギー研究所 El表示装置、電気器具及びel表示装置用の半導体素子基板

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10161564A (ja) * 1996-11-28 1998-06-19 Casio Comput Co Ltd 表示装置
JPH11224604A (ja) * 1998-02-04 1999-08-17 Ise Electronics Corp 蛍光表示装置およびその製造方法
JPH11231805A (ja) * 1998-02-10 1999-08-27 Sanyo Electric Co Ltd 表示装置

Also Published As

Publication number Publication date
US20040164684A1 (en) 2004-08-26
JP4727029B2 (ja) 2011-07-20
TW483178B (en) 2002-04-11
EP1103947A2 (en) 2001-05-30
EP2256718A2 (en) 2010-12-01
KR20010052008A (ko) 2001-06-25
JP2001222240A (ja) 2001-08-17
CN1252665C (zh) 2006-04-19
CN1298168A (zh) 2001-06-06
EP1103947A3 (en) 2007-10-31
US7061186B2 (en) 2006-06-13
US6680577B1 (en) 2004-01-20

Similar Documents

Publication Publication Date Title
KR100693767B1 (ko) El 디스플레이 장치 및 전자 기기
KR100797811B1 (ko) 자기 발광 장치 및 그것을 사용한 전자 장치
KR100678875B1 (ko) 이엘 디스플레이 장치 및 전자 장치
US6872973B1 (en) Electro-optical device
JP5210473B2 (ja) 表示装置
US6791129B2 (en) Light emitting device
KR20010107587A (ko) 발광장치 및 전기기구
JP4906145B2 (ja) El表示装置

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20130130

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20140203

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20150130

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20160127

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20170201

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20180307

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20180307