KR100681398B1 - 열방출형 반도체 칩과 테이프 배선기판 및 그를 이용한테이프 패키지 - Google Patents

열방출형 반도체 칩과 테이프 배선기판 및 그를 이용한테이프 패키지 Download PDF

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Publication number
KR100681398B1
KR100681398B1 KR1020050133623A KR20050133623A KR100681398B1 KR 100681398 B1 KR100681398 B1 KR 100681398B1 KR 1020050133623 A KR1020050133623 A KR 1020050133623A KR 20050133623 A KR20050133623 A KR 20050133623A KR 100681398 B1 KR100681398 B1 KR 100681398B1
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South Korea
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pads
input
power
wiring patterns
ground
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Expired - Fee Related
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KR1020050133623A
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English (en)
Korean (ko)
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조영상
김동한
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삼성전자주식회사
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Priority to KR1020050133623A priority Critical patent/KR100681398B1/ko
Priority to US11/488,057 priority patent/US7589421B2/en
Priority to CN2006101359939A priority patent/CN1992247B/zh
Priority to JP2006291738A priority patent/JP4998985B2/ja
Application granted granted Critical
Publication of KR100681398B1 publication Critical patent/KR100681398B1/ko
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/4985—Flexible insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/0554—External layer
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Lead Frames For Integrated Circuits (AREA)
KR1020050133623A 2005-12-29 2005-12-29 열방출형 반도체 칩과 테이프 배선기판 및 그를 이용한테이프 패키지 Expired - Fee Related KR100681398B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020050133623A KR100681398B1 (ko) 2005-12-29 2005-12-29 열방출형 반도체 칩과 테이프 배선기판 및 그를 이용한테이프 패키지
US11/488,057 US7589421B2 (en) 2005-12-29 2006-07-18 Heat-radiating semiconductor chip, tape wiring substrate and tape package using the same
CN2006101359939A CN1992247B (zh) 2005-12-29 2006-10-16 热辐射半导体芯片和条带引线衬底及使用其的条带封装
JP2006291738A JP4998985B2 (ja) 2005-12-29 2006-10-26 熱放出型テープパッケージ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050133623A KR100681398B1 (ko) 2005-12-29 2005-12-29 열방출형 반도체 칩과 테이프 배선기판 및 그를 이용한테이프 패키지

Publications (1)

Publication Number Publication Date
KR100681398B1 true KR100681398B1 (ko) 2007-02-15

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KR1020050133623A Expired - Fee Related KR100681398B1 (ko) 2005-12-29 2005-12-29 열방출형 반도체 칩과 테이프 배선기판 및 그를 이용한테이프 패키지

Country Status (4)

Country Link
US (1) US7589421B2 (enExample)
JP (1) JP4998985B2 (enExample)
KR (1) KR100681398B1 (enExample)
CN (1) CN1992247B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100763549B1 (ko) * 2006-10-12 2007-10-04 삼성전자주식회사 반도체 패키지
JP2009019743A (ja) 2007-07-13 2009-01-29 Ｇｋｎ ドライブライン トルクテクノロジー株式会社 動力伝達装置
KR101535223B1 (ko) * 2008-08-18 2015-07-09 삼성전자주식회사 테이프 배선 기판, 칩-온-필름 패키지 및 장치 어셈블리
JP5325684B2 (ja) * 2009-07-15 2013-10-23 ルネサスエレクトロニクス株式会社 半導体装置
KR101450950B1 (ko) * 2011-10-04 2014-10-16 엘지디스플레이 주식회사 드라이버 패키지
US8665407B2 (en) 2011-11-16 2014-03-04 Shenzhen China Star Optoelectronics Technology Co., Ltd. Chip-on-film structure for liquid crystal panel
CN102508369B (zh) * 2011-11-16 2014-06-25 深圳市华星光电技术有限公司 用于液晶面板的软板上芯片构造
KR101633373B1 (ko) * 2012-01-09 2016-06-24 삼성전자 주식회사 Ｃｏｆ 패키지 및 이를 포함하는 반도체 장치
KR101900738B1 (ko) * 2012-08-23 2018-09-20 삼성전자주식회사 칩 온 필름
KR20140038823A (ko) * 2012-09-21 2014-03-31 삼성디스플레이 주식회사 표시 패널 및 이의 제조 방법
KR102466918B1 (ko) * 2017-12-27 2022-11-15 삼성디스플레이 주식회사 칩 온 필름 패키지 및 칩 온 필름 패키지를 포함하는 표시 장치
KR102582066B1 (ko) * 2018-04-17 2023-09-25 삼성디스플레이 주식회사 칩 온 필름 패키지 및 칩 온 필름 패키지를 포함하는 표시 장치

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JPH01191433A (ja) * 1988-01-26 1989-08-01 Fujitsu Ltd 集積回路素子
JPH03218062A (ja) * 1990-01-23 1991-09-25 Mitsubishi Electric Corp 半導体装置
US5291043A (en) 1990-02-07 1994-03-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device having gate array
JPH1098068A (ja) 1996-09-24 1998-04-14 Fujitsu Ltd 半導体集積回路装置

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JP2518569B2 (ja) * 1991-09-19 1996-07-24 三菱電機株式会社 半導体装置
JP2520225B2 (ja) * 1994-01-26 1996-07-31 富士通株式会社 半導体集積回路装置
JPH07253591A (ja) 1995-03-22 1995-10-03 Seiko Epson Corp 液晶パネル駆動用ｉｃ
JP3294490B2 (ja) * 1995-11-29 2002-06-24 株式会社日立製作所 Ｂｇａ型半導体装置
JP3207743B2 (ja) 1996-03-22 2001-09-10 シャープ株式会社 フレキシブル配線基板の端子構造およびそれを用いたｉｃチップの実装構造
JPH09258249A (ja) 1996-03-26 1997-10-03 Citizen Watch Co Ltd 半導体集積回路
JPH1092857A (ja) * 1996-09-10 1998-04-10 Mitsubishi Electric Corp 半導体パッケージ
US6057596A (en) * 1998-10-19 2000-05-02 Silicon Integrated Systems Corp. Chip carrier having a specific power join distribution structure
US6403896B1 (en) * 2000-09-27 2002-06-11 Advanced Semiconductor Engineering, Inc. Substrate having specific pad distribution
JP4746770B2 (ja) * 2001-06-19 2011-08-10 ルネサスエレクトロニクス株式会社 半導体装置
JP3803050B2 (ja) * 2001-10-29 2006-08-02 株式会社ルネサステクノロジ 半導体記憶装置、ダイナミックランダムアクセスメモリおよび半導体装置
TW511193B (en) * 2001-12-13 2002-11-21 Acer Labs Inc Inner circuit structure of array type bonding pad chip and its manufacturing method
KR100654338B1 (ko) * 2003-10-04 2006-12-07 삼성전자주식회사 테이프 배선 기판과 그를 이용한 반도체 칩 패키지

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01191433A (ja) * 1988-01-26 1989-08-01 Fujitsu Ltd 集積回路素子
JPH03218062A (ja) * 1990-01-23 1991-09-25 Mitsubishi Electric Corp 半導体装置
US5291043A (en) 1990-02-07 1994-03-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device having gate array
JPH1098068A (ja) 1996-09-24 1998-04-14 Fujitsu Ltd 半導体集積回路装置

Also Published As

Publication number Publication date
CN1992247A (zh) 2007-07-04
US7589421B2 (en) 2009-09-15
JP4998985B2 (ja) 2012-08-15
JP2007184544A (ja) 2007-07-19
US20070152329A1 (en) 2007-07-05
CN1992247B (zh) 2012-03-14

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