KR100652242B1 - 플립칩형 반도체장치, 이의 제조를 위한 제조방법 및 이런 플립칩형 반도체장치를 사용하여 전자제품을 제조하기 위한 제조방법 - Google Patents
플립칩형 반도체장치, 이의 제조를 위한 제조방법 및 이런 플립칩형 반도체장치를 사용하여 전자제품을 제조하기 위한 제조방법 Download PDFInfo
- Publication number
- KR100652242B1 KR100652242B1 KR1020040064361A KR20040064361A KR100652242B1 KR 100652242 B1 KR100652242 B1 KR 100652242B1 KR 1020040064361 A KR1020040064361 A KR 1020040064361A KR 20040064361 A KR20040064361 A KR 20040064361A KR 100652242 B1 KR100652242 B1 KR 100652242B1
- Authority
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- South Korea
- Prior art keywords
- semiconductor device
- semiconductor
- electrode terminals
- substrate
- manufacturing
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- Expired - Fee Related
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/0198—Manufacture or treatment batch processes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
- H10W74/012—Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
- H10W72/01221—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
- H10W72/01225—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in solid form, e.g. by using a powder or by stud bumping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/013—Manufacture or treatment of die-attach connectors
- H10W72/01331—Manufacture or treatment of die-attach connectors using blanket deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/074—Connecting or disconnecting of anisotropic conductive adhesives
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
- H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/321—Structures or relative sizes of die-attach connectors
- H10W72/325—Die-attach connectors having a filler embedded in a matrix
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
- H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
- H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
- H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/853—On the same surface
- H10W72/856—Bump connectors and die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
- H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Wire Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2003-00295067 | 2003-08-19 | ||
| JP2003295067A JP2005064362A (ja) | 2003-08-19 | 2003-08-19 | 電子装置の製造方法及びその電子装置並びに半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20050020632A KR20050020632A (ko) | 2005-03-04 |
| KR100652242B1 true KR100652242B1 (ko) | 2006-12-01 |
Family
ID=34191076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020040064361A Expired - Fee Related KR100652242B1 (ko) | 2003-08-19 | 2004-08-16 | 플립칩형 반도체장치, 이의 제조를 위한 제조방법 및 이런 플립칩형 반도체장치를 사용하여 전자제품을 제조하기 위한 제조방법 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US7238548B2 (https=) |
| JP (1) | JP2005064362A (https=) |
| KR (1) | KR100652242B1 (https=) |
| CN (2) | CN101388387B (https=) |
| TW (1) | TWI248655B (https=) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005093816A1 (en) * | 2004-03-05 | 2005-10-06 | Infineon Technologies Ag | Semiconductor device for radio frequency applications and method for making the same |
| US7195952B2 (en) * | 2005-03-22 | 2007-03-27 | Micrel, Inc. | Schottky diode device with aluminum pickup of backside cathode |
| TWI284949B (en) * | 2005-09-09 | 2007-08-01 | Chipmos Technologies Inc | Bumped structure and its forming method |
| US7325381B2 (en) * | 2005-09-12 | 2008-02-05 | Waldron Joseph M | Devices and methods for introducing air into, or removing air from, containers |
| US7408243B2 (en) * | 2005-12-14 | 2008-08-05 | Honeywell International Inc. | High temperature package flip-chip bonding to ceramic |
| JP4774999B2 (ja) * | 2006-01-18 | 2011-09-21 | ソニー株式会社 | 半導体装置の製造方法 |
| JP4758869B2 (ja) * | 2006-11-08 | 2011-08-31 | 新光電気工業株式会社 | 半導体装置の製造方法 |
| US8335369B2 (en) * | 2007-02-28 | 2012-12-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mask defect analysis |
| JP5014890B2 (ja) * | 2007-06-20 | 2012-08-29 | パナソニック株式会社 | 電極芯線の接合方法 |
| US8323065B2 (en) * | 2008-07-22 | 2012-12-04 | Lg Display Co., Ltd. | Organic electro-luminescence display device and manufacturing method thereof |
| KR101281748B1 (ko) * | 2008-10-23 | 2013-07-04 | 엘지디스플레이 주식회사 | 상부 발광방식 유기전계발광소자 |
| US10910364B2 (en) * | 2009-10-12 | 2021-02-02 | Monolitaic 3D Inc. | 3D semiconductor device |
| US11018133B2 (en) * | 2009-10-12 | 2021-05-25 | Monolithic 3D Inc. | 3D integrated circuit |
| JP5801531B2 (ja) * | 2009-10-16 | 2015-10-28 | ルネサスエレクトロニクス株式会社 | 半導体パッケージ及びその製造方法 |
| US8138020B2 (en) * | 2010-03-25 | 2012-03-20 | International Business Machines Corporation | Wafer level integrated interconnect decal and manufacturing method thereof |
| US9620455B2 (en) * | 2010-06-24 | 2017-04-11 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming anisotropic conductive film between semiconductor die and build-up interconnect structure |
| JP5252007B2 (ja) * | 2011-03-08 | 2013-07-31 | 株式会社村田製作所 | 電子部品の製造方法 |
| US9075105B2 (en) | 2011-09-29 | 2015-07-07 | Broadcom Corporation | Passive probing of various locations in a wireless enabled integrated circuit (IC) |
| US9570420B2 (en) | 2011-09-29 | 2017-02-14 | Broadcom Corporation | Wireless communicating among vertically arranged integrated circuits (ICs) in a semiconductor package |
| US8508029B2 (en) * | 2011-09-29 | 2013-08-13 | Broadcom Corporation | Semiconductor package including an integrated waveguide |
| US9318785B2 (en) | 2011-09-29 | 2016-04-19 | Broadcom Corporation | Apparatus for reconfiguring an integrated waveguide |
| US9356397B2 (en) | 2012-01-19 | 2016-05-31 | Asustek Computer Inc. | Connector and electronic system using the same |
| TWI467733B (zh) * | 2012-05-16 | 2015-01-01 | 矽品精密工業股份有限公司 | 半導體封裝件及其製法 |
| US9040349B2 (en) * | 2012-11-15 | 2015-05-26 | Amkor Technology, Inc. | Method and system for a semiconductor device package with a die to interposer wafer first bond |
| KR102190382B1 (ko) | 2012-12-20 | 2020-12-11 | 삼성전자주식회사 | 반도체 패키지 |
| US9275878B2 (en) | 2013-10-01 | 2016-03-01 | Infineon Technologies Ag | Metal redistribution layer for molded substrates |
| CN110246814B (zh) * | 2019-05-30 | 2021-07-06 | 全球能源互联网研究院有限公司 | 功率芯片预封装、封装方法及其结构、晶圆预封装结构 |
| KR102728190B1 (ko) * | 2019-09-10 | 2024-11-08 | 삼성전자주식회사 | Pop 형태의 반도체 패키지 |
| US11158562B2 (en) * | 2020-02-11 | 2021-10-26 | International Business Machines Corporation | Conformal integrated circuit (IC) device package lid |
| JP2021168365A (ja) * | 2020-04-13 | 2021-10-21 | 株式会社ディスコ | 板状物の加工方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0312942A (ja) | 1989-06-12 | 1991-01-21 | Sharp Corp | 半導体装置の封止方法および半導体チップ |
| US5492863A (en) * | 1994-10-19 | 1996-02-20 | Motorola, Inc. | Method for forming conductive bumps on a semiconductor device |
| US5672400A (en) * | 1995-12-21 | 1997-09-30 | Minnesota Mining And Manufacturing Company | Electronic assembly with semi-crystalline copolymer adhesive |
| KR100443484B1 (ko) * | 1996-02-19 | 2004-09-18 | 마츠시타 덴끼 산교 가부시키가이샤 | 반도체장치및그제조방법 |
| JP2848357B2 (ja) * | 1996-10-02 | 1999-01-20 | 日本電気株式会社 | 半導体装置の実装方法およびその実装構造 |
| KR100568491B1 (ko) * | 1997-07-04 | 2006-04-07 | 제온 코포레이션 | 반도체부품 접착제 |
| JPH1140522A (ja) * | 1997-07-17 | 1999-02-12 | Rohm Co Ltd | 半導体ウエハの製造方法、この方法により作製された半導体ウエハ、半導体チップの製造方法、およびこの方法により製造された半導体チップ、ならびにこの半導体チップを備えたicカード |
| JPH1154662A (ja) * | 1997-08-01 | 1999-02-26 | Nec Corp | フリップチップ樹脂封止構造及び樹脂封入方法 |
| JP3326382B2 (ja) | 1998-03-26 | 2002-09-24 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| JP3417292B2 (ja) | 1998-04-08 | 2003-06-16 | 松下電器産業株式会社 | 半導体装置 |
| JP3336253B2 (ja) | 1998-04-23 | 2002-10-21 | 松下電工株式会社 | 半導体装置とその製造方法、実装方法および用途 |
| CN1242602A (zh) * | 1998-07-16 | 2000-01-26 | 日东电工株式会社 | 晶片规模封装结构及其内使用的电路板 |
| JP2000252320A (ja) | 1999-03-02 | 2000-09-14 | Hitachi Ltd | 半導体装置およびその製造方法 |
| JP2000311921A (ja) * | 1999-04-27 | 2000-11-07 | Sony Corp | 半導体装置およびその製造方法 |
| US6350664B1 (en) * | 1999-09-02 | 2002-02-26 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method of manufacturing the same |
| JP2001176898A (ja) | 1999-12-20 | 2001-06-29 | Mitsui High Tec Inc | 半導体パッケージの製造方法 |
| JP4547523B2 (ja) | 2000-09-25 | 2010-09-22 | 太陽誘電株式会社 | チップ部品組立体とその製造方法 |
| JP2002151551A (ja) * | 2000-11-10 | 2002-05-24 | Hitachi Ltd | フリップチップ実装構造、その実装構造を有する半導体装置及び実装方法 |
| US6780682B2 (en) * | 2001-02-27 | 2004-08-24 | Chippac, Inc. | Process for precise encapsulation of flip chip interconnects |
| JP2002280401A (ja) | 2001-03-21 | 2002-09-27 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JP2002350840A (ja) * | 2001-05-28 | 2002-12-04 | Hitachi Ltd | 反射型液晶表示装置 |
| JP2003007652A (ja) * | 2001-06-26 | 2003-01-10 | Mitsubishi Electric Corp | 半導体チップの製造方法 |
| JP2003168700A (ja) | 2001-09-18 | 2003-06-13 | Seiko Epson Corp | 半導体ウエハ、半導体装置及びその製造方法、回路基板並びに電子機器 |
| US6838316B2 (en) * | 2002-03-06 | 2005-01-04 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing method using ultrasonic flip chip bonding technique |
-
2003
- 2003-08-19 JP JP2003295067A patent/JP2005064362A/ja active Pending
-
2004
- 2004-08-16 KR KR1020040064361A patent/KR100652242B1/ko not_active Expired - Fee Related
- 2004-08-17 US US10/919,411 patent/US7238548B2/en not_active Expired - Fee Related
- 2004-08-19 CN CN2008101610589A patent/CN101388387B/zh not_active Expired - Fee Related
- 2004-08-19 CN CNB2004100577886A patent/CN100438001C/zh not_active Expired - Fee Related
- 2004-08-19 TW TW093124940A patent/TWI248655B/zh active
-
2007
- 2007-05-11 US US11/798,224 patent/US7554205B2/en not_active Expired - Fee Related
-
2008
- 2008-10-24 US US12/257,689 patent/US7763985B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005064362A (ja) | 2005-03-10 |
| CN101388387B (zh) | 2011-04-13 |
| US20090051029A1 (en) | 2009-02-26 |
| TW200511458A (en) | 2005-03-16 |
| US7763985B2 (en) | 2010-07-27 |
| CN1585123A (zh) | 2005-02-23 |
| US20050040541A1 (en) | 2005-02-24 |
| CN101388387A (zh) | 2009-03-18 |
| US20070216035A1 (en) | 2007-09-20 |
| US7238548B2 (en) | 2007-07-03 |
| CN100438001C (zh) | 2008-11-26 |
| US7554205B2 (en) | 2009-06-30 |
| TWI248655B (en) | 2006-02-01 |
| KR20050020632A (ko) | 2005-03-04 |
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