JP4758869B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4758869B2 JP4758869B2 JP2006303139A JP2006303139A JP4758869B2 JP 4758869 B2 JP4758869 B2 JP 4758869B2 JP 2006303139 A JP2006303139 A JP 2006303139A JP 2006303139 A JP2006303139 A JP 2006303139A JP 4758869 B2 JP4758869 B2 JP 4758869B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 79
- 238000000034 method Methods 0.000 claims description 131
- 239000000758 substrate Substances 0.000 claims description 101
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- 238000004806 packaging method and process Methods 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229920001187 thermosetting polymer Polymers 0.000 description 7
- 230000000149 penetrating effect Effects 0.000 description 5
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- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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Description
前記基板に積層する導電層の表面に、導電性ペーストよりなる接続パターンを形成する接続パターン工程と、
前記接続パターンが形成された側の前記導電層と前記バンプが形成された側の前記基板との間に絶縁層を配置し、その後、前記バンプの先端が前記絶縁層を貫通するように、前記導電層を押圧して、前記接続パターンに前記バンプの先端を挿入することで、前記導電層と前記バンプとを前記接続パターンにより接合する接合工程と、
前記接合工程後に、前記基板を個片化する個片化工程と、を有することを特徴とする半導体装置の製造方法が提供される。
前記バンプの先端を導電性ペーストよりなる層に接触させ、前記バンプの先端に前記導電性ペーストよりなる接続パターンを転写する転写工程と、
前記基板に積層する導電層と前記接続パターンが形成された側の基板との間に絶縁層を配置し、その後、前記バンプの先端が前記絶縁層を貫通するように、前記導電層を押圧し、加熱することで前記絶縁層及び前記接続パターンを硬化させ、前記導電層と前記バンプとを前記接続パターンにより接合する接合工程と、
前記接合工程後に、前記基板を個片化する個片化工程と、を有することを特徴とする半導体装置の製造方法が提供される。
101A 基板
101a 領域
102 保護層
103 電極パッド
104 バンプ
105 絶縁層
201 積層用基板
201a 第1の主面
201b 第2の主面
201A,201B,201C,201D,201E 導電層
201C ビアホール
202 導電性ペースト
203 はんだバンプ
204,205 絶縁層
206,207,208,209 導電層
301,301A,305,306 導電層
301A 導電層
302 接続パターン
302A 転写層
302B スキージ装置
303 支持層
304 絶縁層
304A ビアプラグ
Claims (7)
- 基板の半導体チップに相当する領域に形成された電極パッド上に、ボンディングワイヤによってバンプを形成するバンプ形成工程と、
前記基板に積層する導電層の表面に、導電性ペーストよりなる接続パターンを形成する接続パターン工程と、
前記接続パターンが形成された側の前記導電層と前記バンプが形成された側の前記基板との間に絶縁層を配置し、その後、前記バンプの先端が前記絶縁層を貫通するように、前記導電層を押圧して、前記接続パターンに前記バンプの先端を挿入することで、前記導電層と前記バンプとを前記接続パターンにより接合する接合工程と、
前記接合工程後に、前記基板を個片化する個片化工程と、を有することを特徴とする半導体装置の製造方法。 - 前記接合工程において、押圧及び加熱を行い、前記絶縁層及び前記接続パターンを硬化させることを特徴とする請求項1記載の半導体装置の製造方法。
- 前記導電層をエッチングしてパターニングするパターニング工程をさらに有することを特徴とする請求項1又は2記載の半導体装置の製造方法。
- 前記導電層を給電層とする電解メッキにより、パターンメッキを行うメッキ工程をさらに有することを特徴とする請求項1又は2記載の半導体装置の製造方法。
- 前記導電層は、該導電層を支持する支持層上に積層されて、前記絶縁層を介して前記基板上に貼り付けられ、該導電層が前記基板上に貼り付けられた後で前記支持層が除去されることを特徴とする請求項1乃至4のいずれか1項記載の半導体装置の製造方法。
- 前記基板に積層する前記導電層は、多層配線構造を構成する導電層であることを特徴とする請求項1又は2記載の半導体装置の製造方法。
- 基板の半導体チップに相当する領域に形成された電極パッド上に、ボンディングワイヤによってバンプを形成するバンプ形成工程と、
前記バンプの先端を導電性ペーストよりなる層に接触させ、前記バンプの先端に前記導電性ペーストよりなる接続パターンを転写する転写工程と、
前記基板に積層する導電層と前記接続パターンが形成された側の基板との間に絶縁層を配置し、その後、前記バンプの先端が前記絶縁層を貫通するように、前記導電層を押圧し、加熱することで前記絶縁層及び前記接続パターンを硬化させ、前記導電層と前記バンプとを前記接続パターンにより接合する接合工程と、
前記接合工程後に、前記基板を個片化する個片化工程と、を有することを特徴とする半導体装置の製造方法。
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JP2006303139A JP4758869B2 (ja) | 2006-11-08 | 2006-11-08 | 半導体装置の製造方法 |
KR1020070105924A KR20080041991A (ko) | 2006-11-08 | 2007-10-22 | 반도체 장치의 제조 방법 |
US11/923,096 US20080182400A1 (en) | 2006-11-08 | 2007-10-24 | Manufacturing method of semiconductor device |
TW096141633A TW200824082A (en) | 2006-11-08 | 2007-11-05 | Manufacturing method of semiconductor device |
EP07021716A EP1921670A2 (en) | 2006-11-08 | 2007-11-08 | Manufacturing method of semiconductor device |
CNA2007101637924A CN101179036A (zh) | 2006-11-08 | 2007-11-08 | 半导体器件的制造方法 |
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WO2010024233A1 (ja) * | 2008-08-27 | 2010-03-04 | 日本電気株式会社 | 機能素子を内蔵可能な配線基板及びその製造方法 |
US9299661B2 (en) * | 2009-03-24 | 2016-03-29 | General Electric Company | Integrated circuit package and method of making same |
JP5237242B2 (ja) | 2009-11-27 | 2013-07-17 | 日東電工株式会社 | 配線回路構造体およびそれを用いた半導体装置の製造方法 |
WO2011137298A2 (en) * | 2010-04-30 | 2011-11-03 | Second Sight Medical Products,Inc. | Improved biocompatible bonding method |
TWI557855B (zh) * | 2011-12-30 | 2016-11-11 | 旭德科技股份有限公司 | 封裝載板及其製作方法 |
KR102015812B1 (ko) * | 2012-10-05 | 2019-08-30 | 한국전자통신연구원 | 회로보드, 그 제조방법, 및 이를 포함하는 반도체 패키지 |
WO2014155619A1 (ja) * | 2013-03-28 | 2014-10-02 | 株式会社安川電機 | 半導体装置、電力変換装置および半導体装置の製造方法 |
CN105990288B (zh) * | 2015-01-30 | 2019-03-12 | 日月光半导体制造股份有限公司 | 半导体衬底及其制造方法 |
JP2017126688A (ja) * | 2016-01-15 | 2017-07-20 | 株式会社ジェイデバイス | 半導体パッケージの製造方法及び半導体パッケージ |
US20230137998A1 (en) * | 2021-11-03 | 2023-05-04 | Amkor Technology Singapore Holding Pte. Ltd. | Semiconductor devices and methods of manufacturing electronic devices |
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