KR100649461B1 - 표면 처리 방법 및 장치 - Google Patents
표면 처리 방법 및 장치 Download PDFInfo
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- KR100649461B1 KR100649461B1 KR1020017004594A KR20017004594A KR100649461B1 KR 100649461 B1 KR100649461 B1 KR 100649461B1 KR 1020017004594 A KR1020017004594 A KR 1020017004594A KR 20017004594 A KR20017004594 A KR 20017004594A KR 100649461 B1 KR100649461 B1 KR 100649461B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
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Abstract
Description
청구범위 제14항에 따른 발명은, 청구범위 제8항 내지 제13항 중 어느 한 항에 기재된 표면 처리 장치와, 내부를 비반응성 분위기로 유지시킬 수 있음과 동시에 표면 처리 장치 사이에서 피처리물을 비반응성 분위기 속에서 반송가능하도록 설치된 반송실와, 반송실 사이에서 피처리물을 비반응성 분위기 속에서 반송가능하도록 설치된 1 이상의 다른 처리 장치를 구비하는 것을 특징으로 한다.
청구범위 제15항에 따른 발명은, 상기 다른 처리 장치가 피처리물 상에 금속 배선을 형성하기 위한 금속 배선 형성실인 것을 특징으로 한다.
Claims (25)
- 삭제
- 삭제
- 삭제
- 삭제
- 피처리물의 표면에 ClF3 가스를 공급하여 상기 피처리물의 표면에 ClF3 가스를 흡착시키는 흡착 공정과,상기 피처리물의 표면으로의 상기 ClF3 가스의 공급을 정지하는 공정과,상기 피처리물의 표면에 흡착된 ClF3 가스를 이용하여 상기 피처리물의 표면을 세정하는 공정을 포함하는 것인 표면 처리 방법.
- 피처리물의 표면에 세정 가스를 공급하여 상기 피처리물의 표면에 세정 가스를 흡착시키는 흡착 공정과,상기 피처리물의 표면으로의 상기 세정 가스의 공급을 정지하는 공정과,상기 피처리물의 표면에 흡착된 세정 가스를 이용하여 상기 피처리물의 표면을 세정하는 공정을 포함하는 것인 표면 처리 방법.
- 제5항 또는 제6항에 있어서, 상기 흡착 공정에서 상기 피처리물을 20℃ 이하로 냉각하는 것인 표면 처리 방법.
- 내부에 피처리물이 배치되는 처리 용기와,상기 처리 용기 내에 ClF3 가스를 공급하는 수단과,상기 처리 용기에 공급된 상기 ClF3 가스를 활성화하는 수단과,상기 처리 용기 내에 환원 가스를 공급하는 수단을 포함하는 것인 표면 처리 장치.
- 내부에 피처리물이 배치되는 처리 용기와,상기 처리 용기 내에 ClF3 가스를 공급하는 수단과,상기 피처리물에 ClF3 가스의 흡착을 촉진하는 수단과,상기 처리 용기에 공급된 상기 ClF3 가스를 활성화하는 수단을 포함하는 것인 표면 처리 장치.
- 제9항에 있어서, 상기 처리 용기 내에 설치되어 상기 피처리물을 적재하는 적재대를 포함하는 것인 표면 처리 장치.
- 제10항에 있어서, 상기 피처리물에 ClF3 가스의 흡착을 촉진하는 수단은 상기 적재대 내에 설치되어 상기 적재대 상에 적재된 상기 피처리물을 냉각시키는 수단인 것인 표면 처리 장치.
- 제11항에 있어서, 상기 ClF3 가스를 활성화하는 수단은 상기 적재대의 피처리물 적재부로부터 이격된 가열 위치에서 상기 피처리물을 가열하는 수단인 것인 표면 처리 장치.
- 제12항에 있어서, 상기 피처리물 적재부와 상기 가열 위치 사이에서 상기 피처리물을 승강시키는 수단을 구비하는 것인 표면 처리 장치.
- 제8항 내지 제13항 중 어느 한 항에 기재된 표면 처리 장치와,내부를 비반응성 분위기로 유지할 수 있음과 동시에, 상기 표면 처리 장치와의 사이에서 피처리물을 비반응성 분위기 속에서 보내고 받을 수 있게 설치된 반송실과,상기 반송실과의 사이에서 피처리물을 비반응성 분위기 속에서 보내고 받을 수 있게 설치된 1 이상의 다른 처리 장치를 포함하는 것인 클러스터 장치.
- 제14항에 있어서, 상기 표면 처리 장치는 피처리물 상에 금속 배선을 형성하기 위한 금속 배선 형성실인 것인 클러스터 장치.
- 제6항에 있어서, 상기 피처리물의 표면에 잔류한 세정 가스로부터 발생하는 물질을 제거하기 위하여 상기 피처리물을 환원 가스에 노출시키는 공정을 더 포함하는 것인 표면 처리 방법.
- 제16항에 있어서, 상기 흡착 공정에서 상기 피처리물을 20℃ 이하로 냉각하는 것인 표면 처리 방법.
- 제17항에 있어서, 상기 피처리물의 표면을 세정하는 공정에서 상기 피처리물을 가열함으로써 상기 세정 가스를 활성화하는 것인 표면 처리 방법.
- 제18항에 있어서, 상기 피처리물을 가열하는 공정에서 상기 피처리물을 적재대와 이격되어 배치하는 것인 표면 처리 방법.
- 제17항에 있어서, 상기 피처리물의 표면을 세정하는 공정에서 자외선을 방사함으로써 상기 세정 가스를 활성화하는 것인 표면 처리 방법.
- 제17항에 있어서, 플라즈마에 의하여 상기 환원 가스를 활성화하는 것인 표면 처리 방법.
- 제17항에 있어서, 상기 환원 가스를 피처리물에 적용하는 공정에서 상기 피처리물을 가열하는 것인 표면 처리 방법.
- 제16항에 있어서, 상기 세정 가스는 불소 함유 가스(fluorine-containing gas)인 것인 표면 처리 방법.
- 제16항에 있어서, 상기 세정 가스는 염소 함유 가스(chlorine-containing gas)인 것인 표면 처리 방법.
- 제16항에 있어서, 상기 환원 가스는 수소 가스(H2 gas)인 것인 표면 처리 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1998-291867 | 1998-10-14 | ||
JP10291867A JP2000124195A (ja) | 1998-10-14 | 1998-10-14 | 表面処理方法及びその装置 |
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KR20010080114A KR20010080114A (ko) | 2001-08-22 |
KR100649461B1 true KR100649461B1 (ko) | 2006-11-24 |
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KR1020017004594A KR100649461B1 (ko) | 1998-10-14 | 1999-10-14 | 표면 처리 방법 및 장치 |
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US (2) | US7094703B2 (ko) |
EP (1) | EP1139398A4 (ko) |
JP (1) | JP2000124195A (ko) |
KR (1) | KR100649461B1 (ko) |
TW (1) | TW425622B (ko) |
WO (1) | WO2000022660A1 (ko) |
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JP4057198B2 (ja) | 1999-08-13 | 2008-03-05 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
JP2003086569A (ja) * | 2001-09-12 | 2003-03-20 | Tokyo Electron Ltd | プラズマ処理方法 |
US7037376B2 (en) * | 2003-04-11 | 2006-05-02 | Applied Materials Inc. | Backflush chamber clean |
DE10320597A1 (de) * | 2003-04-30 | 2004-12-02 | Aixtron Ag | Verfahren und Vorrichtung zum Abscheiden von Halbleiterschichten mit zwei Prozessgasen, von denen das eine vorkonditioniert ist |
US7618898B2 (en) * | 2004-03-31 | 2009-11-17 | Nec Corporation | Method and apparatus for forming contact hole |
US7789962B2 (en) * | 2005-03-31 | 2010-09-07 | Tokyo Electron Limited | Device and method for controlling temperature of a mounting table, a program therefor, and a processing apparatus including same |
JP4519037B2 (ja) * | 2005-08-31 | 2010-08-04 | 東京エレクトロン株式会社 | 加熱装置及び塗布、現像装置 |
JP4527670B2 (ja) * | 2006-01-25 | 2010-08-18 | 東京エレクトロン株式会社 | 加熱処理装置、加熱処理方法、制御プログラムおよびコンピュータ読取可能な記憶媒体 |
US7877895B2 (en) * | 2006-06-26 | 2011-02-01 | Tokyo Electron Limited | Substrate processing apparatus |
KR100807066B1 (ko) * | 2006-08-31 | 2008-02-25 | 동부일렉트로닉스 주식회사 | 반도체 소자 제조 장치 및 이를 이용한 반도체 소자의 제조방법 |
KR101339700B1 (ko) * | 2007-05-08 | 2013-12-10 | (주)소슬 | 가스 공급 장치 및 이를 구비하는 에지 식각 장치 |
JP5151651B2 (ja) * | 2008-04-22 | 2013-02-27 | 株式会社Sumco | 酸素イオン注入装置 |
US20110136346A1 (en) * | 2009-12-04 | 2011-06-09 | Axcelis Technologies, Inc. | Substantially Non-Oxidizing Plasma Treatment Devices and Processes |
JP2011216597A (ja) * | 2010-03-31 | 2011-10-27 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法及び成膜装置 |
US9570678B1 (en) | 2010-06-08 | 2017-02-14 | Crossbar, Inc. | Resistive RAM with preferental filament formation region and methods |
US8946046B1 (en) | 2012-05-02 | 2015-02-03 | Crossbar, Inc. | Guided path for forming a conductive filament in RRAM |
US9601692B1 (en) | 2010-07-13 | 2017-03-21 | Crossbar, Inc. | Hetero-switching layer in a RRAM device and method |
US8441835B2 (en) | 2010-06-11 | 2013-05-14 | Crossbar, Inc. | Interface control for improved switching in RRAM |
US8374018B2 (en) | 2010-07-09 | 2013-02-12 | Crossbar, Inc. | Resistive memory using SiGe material |
US8569172B1 (en) | 2012-08-14 | 2013-10-29 | Crossbar, Inc. | Noble metal/non-noble metal electrode for RRAM applications |
US8168506B2 (en) | 2010-07-13 | 2012-05-01 | Crossbar, Inc. | On/off ratio for non-volatile memory device and method |
US8884261B2 (en) | 2010-08-23 | 2014-11-11 | Crossbar, Inc. | Device switching using layered device structure |
US8841196B1 (en) | 2010-09-29 | 2014-09-23 | Crossbar, Inc. | Selective deposition of silver for non-volatile memory device fabrication |
US9401475B1 (en) | 2010-08-23 | 2016-07-26 | Crossbar, Inc. | Method for silver deposition for a non-volatile memory device |
US8492195B2 (en) | 2010-08-23 | 2013-07-23 | Crossbar, Inc. | Method for forming stackable non-volatile resistive switching memory devices |
US8187945B2 (en) * | 2010-10-27 | 2012-05-29 | Crossbar, Inc. | Method for obtaining smooth, continuous silver film |
US8258020B2 (en) | 2010-11-04 | 2012-09-04 | Crossbar Inc. | Interconnects for stacked non-volatile memory device and method |
US8502185B2 (en) | 2011-05-31 | 2013-08-06 | Crossbar, Inc. | Switching device having a non-linear element |
USRE46335E1 (en) | 2010-11-04 | 2017-03-07 | Crossbar, Inc. | Switching device having a non-linear element |
US8088688B1 (en) | 2010-11-05 | 2012-01-03 | Crossbar, Inc. | p+ polysilicon material on aluminum for non-volatile memory device and method |
US8815696B1 (en) | 2010-12-31 | 2014-08-26 | Crossbar, Inc. | Disturb-resistant non-volatile memory device using via-fill and etchback technique |
US8791010B1 (en) | 2010-12-31 | 2014-07-29 | Crossbar, Inc. | Silver interconnects for stacked non-volatile memory device and method |
US9620206B2 (en) | 2011-05-31 | 2017-04-11 | Crossbar, Inc. | Memory array architecture with two-terminal memory cells |
US8619459B1 (en) | 2011-06-23 | 2013-12-31 | Crossbar, Inc. | High operating speed resistive random access memory |
US8946669B1 (en) | 2012-04-05 | 2015-02-03 | Crossbar, Inc. | Resistive memory device and fabrication methods |
US9564587B1 (en) | 2011-06-30 | 2017-02-07 | Crossbar, Inc. | Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects |
US9166163B2 (en) | 2011-06-30 | 2015-10-20 | Crossbar, Inc. | Sub-oxide interface layer for two-terminal memory |
US9627443B2 (en) | 2011-06-30 | 2017-04-18 | Crossbar, Inc. | Three-dimensional oblique two-terminal memory with enhanced electric field |
US9685608B2 (en) | 2012-04-13 | 2017-06-20 | Crossbar, Inc. | Reduced diffusion in metal electrode for two-terminal memory |
US8946667B1 (en) | 2012-04-13 | 2015-02-03 | Crossbar, Inc. | Barrier structure for a silver based RRAM and method |
US8658476B1 (en) | 2012-04-20 | 2014-02-25 | Crossbar, Inc. | Low temperature P+ polycrystalline silicon material for non-volatile memory device |
US8796658B1 (en) | 2012-05-07 | 2014-08-05 | Crossbar, Inc. | Filamentary based non-volatile resistive memory device and method |
US8765566B2 (en) | 2012-05-10 | 2014-07-01 | Crossbar, Inc. | Line and space architecture for a non-volatile memory device |
US9070859B1 (en) | 2012-05-25 | 2015-06-30 | Crossbar, Inc. | Low temperature deposition method for polycrystalline silicon material for a non-volatile memory device |
US8883603B1 (en) | 2012-08-01 | 2014-11-11 | Crossbar, Inc. | Silver deposition method for a non-volatile memory device |
US9741765B1 (en) | 2012-08-14 | 2017-08-22 | Crossbar, Inc. | Monolithically integrated resistive memory using integrated-circuit foundry compatible processes |
US9583701B1 (en) | 2012-08-14 | 2017-02-28 | Crossbar, Inc. | Methods for fabricating resistive memory device switching material using ion implantation |
US8796102B1 (en) | 2012-08-29 | 2014-08-05 | Crossbar, Inc. | Device structure for a RRAM and method |
US9312483B2 (en) | 2012-09-24 | 2016-04-12 | Crossbar, Inc. | Electrode structure for a non-volatile memory device and method |
US9576616B2 (en) | 2012-10-10 | 2017-02-21 | Crossbar, Inc. | Non-volatile memory with overwrite capability and low write amplification |
US9406379B2 (en) | 2013-01-03 | 2016-08-02 | Crossbar, Inc. | Resistive random access memory with non-linear current-voltage relationship |
US10290801B2 (en) | 2014-02-07 | 2019-05-14 | Crossbar, Inc. | Scalable silicon based resistive memory device |
KR102493574B1 (ko) * | 2015-10-13 | 2023-01-31 | 세메스 주식회사 | 기판 처리 장치 |
US11031252B2 (en) * | 2016-11-30 | 2021-06-08 | Taiwan Semiconductor Manufacturing Compant, Ltd. | Heat shield for chamber door and devices manufactured using same |
JP6615153B2 (ja) * | 2017-06-16 | 2019-12-04 | 東京エレクトロン株式会社 | 基板処理装置、基板載置機構、および基板処理方法 |
KR20210039825A (ko) * | 2019-10-02 | 2021-04-12 | 삼성전자주식회사 | 기판 증착장치 및 이를 구비하는 기판 증착 시스템 |
JP7486398B2 (ja) | 2020-10-19 | 2024-05-17 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05217968A (ja) * | 1992-02-03 | 1993-08-27 | Kawasaki Steel Corp | 半導体基板の表面処理方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63204726A (ja) | 1987-02-20 | 1988-08-24 | Anelva Corp | 真空処理装置 |
JPH01200628A (ja) * | 1988-02-05 | 1989-08-11 | Toshiba Corp | ドライエッチング方法 |
JPH01152274A (ja) * | 1987-12-09 | 1989-06-14 | Iwatani Internatl Corp | 膜形成操作系におけるフッ化塩素クリーニング後の汚染除去方法 |
JP2836891B2 (ja) * | 1990-02-21 | 1998-12-14 | セントラル硝子株式会社 | フッ化塩素ガスによるSiOxのクリーニング方法 |
JP3058909B2 (ja) * | 1990-10-19 | 2000-07-04 | 東京エレクトロン株式会社 | クリーニング方法 |
JPH04181734A (ja) * | 1990-11-16 | 1992-06-29 | Central Glass Co Ltd | CVDSiO↓2のクリーニング方法 |
JPH04206526A (ja) * | 1990-11-30 | 1992-07-28 | Hitachi Ltd | スルーホールへの金属穴埋め方法 |
JP2939355B2 (ja) | 1991-04-22 | 1999-08-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US5772832A (en) | 1991-06-27 | 1998-06-30 | Applied Materials, Inc | Process for etching oxides in an electromagnetically coupled planar plasma apparatus |
US5326406A (en) * | 1991-07-31 | 1994-07-05 | Kawasaki Steel Corporation | Method of cleaning semiconductor substrate and apparatus for carrying out the same |
JPH06196455A (ja) | 1991-07-31 | 1994-07-15 | Kawasaki Steel Corp | 半導体基板の処理方法 |
JPH05243218A (ja) * | 1992-02-28 | 1993-09-21 | Nec Corp | 半導体装置の製造方法 |
JPH05251408A (ja) | 1992-03-06 | 1993-09-28 | Ebara Corp | 半導体ウェーハのエッチング装置 |
JPH06124959A (ja) * | 1992-10-12 | 1994-05-06 | Kawasaki Steel Corp | 半導体装置の製造方法 |
US5478429A (en) | 1993-01-20 | 1995-12-26 | Tokyo Electron Limited | Plasma process apparatus |
US5350480A (en) | 1993-07-23 | 1994-09-27 | Aspect International, Inc. | Surface cleaning and conditioning using hot neutral gas beam array |
US5614055A (en) | 1993-08-27 | 1997-03-25 | Applied Materials, Inc. | High density plasma CVD and etching reactor |
JPH07142444A (ja) * | 1993-11-12 | 1995-06-02 | Hitachi Ltd | マイクロ波プラズマ処理装置および処理方法 |
JPH07221069A (ja) * | 1994-01-28 | 1995-08-18 | Iwatani Internatl Corp | 酸化シリコン上の窒化膜の除去方法 |
TW297135B (ko) * | 1995-03-20 | 1997-02-01 | Hitachi Ltd | |
JP3122601B2 (ja) | 1995-06-15 | 2001-01-09 | 東京エレクトロン株式会社 | プラズマ成膜方法及びその装置 |
US6059922A (en) | 1996-11-08 | 2000-05-09 | Kabushiki Kaisha Toshiba | Plasma processing apparatus and a plasma processing method |
JPH10306377A (ja) | 1997-05-02 | 1998-11-17 | Tokyo Electron Ltd | 微量ガス供給方法及びその装置 |
JP3480271B2 (ja) * | 1997-10-07 | 2003-12-15 | 東京エレクトロン株式会社 | 熱処理装置のシャワーヘッド構造 |
-
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- 1998-10-14 JP JP10291867A patent/JP2000124195A/ja active Pending
-
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- 1999-10-13 TW TW088117721A patent/TW425622B/zh not_active IP Right Cessation
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Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05217968A (ja) * | 1992-02-03 | 1993-08-27 | Kawasaki Steel Corp | 半導体基板の表面処理方法 |
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TW425622B (en) | 2001-03-11 |
EP1139398A1 (en) | 2001-10-04 |
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JP2000124195A (ja) | 2000-04-28 |
US7094703B2 (en) | 2006-08-22 |
US20040194340A1 (en) | 2004-10-07 |
WO2000022660A1 (fr) | 2000-04-20 |
US7146744B2 (en) | 2006-12-12 |
US20040175944A1 (en) | 2004-09-09 |
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