KR100641900B1 - 유기층을 갖는 발광 소자 - Google Patents
유기층을 갖는 발광 소자 Download PDFInfo
- Publication number
- KR100641900B1 KR100641900B1 KR20037006815A KR20037006815A KR100641900B1 KR 100641900 B1 KR100641900 B1 KR 100641900B1 KR 20037006815 A KR20037006815 A KR 20037006815A KR 20037006815 A KR20037006815 A KR 20037006815A KR 100641900 B1 KR100641900 B1 KR 100641900B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- light emitting
- transport layer
- hole
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000012044 organic layer Substances 0.000 title claims abstract description 10
- 239000010410 layer Substances 0.000 claims abstract description 324
- 239000002800 charge carrier Substances 0.000 claims abstract description 54
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000011368 organic material Substances 0.000 claims abstract description 9
- 230000000903 blocking effect Effects 0.000 claims description 82
- 239000000463 material Substances 0.000 claims description 56
- 238000002347 injection Methods 0.000 claims description 40
- 239000007924 injection Substances 0.000 claims description 40
- 239000002019 doping agent Substances 0.000 claims description 33
- 230000005525 hole transport Effects 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 abstract description 18
- 238000005215 recombination Methods 0.000 abstract description 10
- 230000006798 recombination Effects 0.000 abstract description 10
- 230000008569 process Effects 0.000 abstract description 4
- 238000004770 highest occupied molecular orbital Methods 0.000 description 19
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 17
- 239000011159 matrix material Substances 0.000 description 9
- 230000008901 benefit Effects 0.000 description 5
- 229910010272 inorganic material Inorganic materials 0.000 description 5
- 239000011147 inorganic material Substances 0.000 description 5
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- IYZMXHQDXZKNCY-UHFFFAOYSA-N 1-n,1-n-diphenyl-4-n,4-n-bis[4-(n-phenylanilino)phenyl]benzene-1,4-diamine Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)N(C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 IYZMXHQDXZKNCY-UHFFFAOYSA-N 0.000 description 3
- 239000000370 acceptor Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- UEEXRMUCXBPYOV-UHFFFAOYSA-N iridium;2-phenylpyridine Chemical compound [Ir].C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1 UEEXRMUCXBPYOV-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- VBRDLBGPDHCSQC-UHFFFAOYSA-N 2,3,4-tris(9h-carbazol-1-yl)-n,n-diphenylaniline Chemical compound C1=CC=CC=C1N(C=1C(=C(C=2C=3NC4=CC=CC=C4C=3C=CC=2)C(C=2C=3NC4=CC=CC=C4C=3C=CC=2)=CC=1)C=1C=2NC3=CC=CC=C3C=2C=CC=1)C1=CC=CC=C1 VBRDLBGPDHCSQC-UHFFFAOYSA-N 0.000 description 1
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- -1 BCP (batocuproin) Chemical compound 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 241000284156 Clerodendrum quadriloculare Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 102000004144 Green Fluorescent Proteins Human genes 0.000 description 1
- 108010043121 Green Fluorescent Proteins Proteins 0.000 description 1
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 description 1
- IWVQBZIXLQTALY-UHFFFAOYSA-N [5-[5-bis(2,4,6-trimethylphenyl)boranylthiophen-2-yl]thiophen-2-yl]-bis(2,4,6-trimethylphenyl)borane Chemical compound CC1=CC(C)=CC(C)=C1B(C=1C(=CC(C)=CC=1C)C)C1=CC=C(C=2SC(=CC=2)B(C=2C(=CC(C)=CC=2C)C)C=2C(=CC(C)=CC=2C)C)S1 IWVQBZIXLQTALY-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- IUFDZNVMARBLOJ-UHFFFAOYSA-K aluminum;quinoline-2-carboxylate Chemical compound [Al+3].C1=CC=CC2=NC(C(=O)[O-])=CC=C21.C1=CC=CC2=NC(C(=O)[O-])=CC=C21.C1=CC=CC2=NC(C(=O)[O-])=CC=C21 IUFDZNVMARBLOJ-UHFFFAOYSA-K 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002503 iridium Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/165—Electron transporting layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/18—Carrier blocking layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/917—Electroluminescent
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10058578.7 | 2000-11-20 | ||
| DE10058578A DE10058578C2 (de) | 2000-11-20 | 2000-11-20 | Lichtemittierendes Bauelement mit organischen Schichten |
| PCT/DE2001/004422 WO2002041414A1 (de) | 2000-11-20 | 2001-11-20 | Lichtemittierendes bauelement mit organischen schichten |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20030072355A KR20030072355A (ko) | 2003-09-13 |
| KR100641900B1 true KR100641900B1 (ko) | 2006-11-03 |
Family
ID=7664651
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR20037006815A Expired - Lifetime KR100641900B1 (ko) | 2000-11-20 | 2001-11-20 | 유기층을 갖는 발광 소자 |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US7074500B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP1336208B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP3695714B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR100641900B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN100369286C (cg-RX-API-DMAC7.html) |
| AT (1) | ATE341837T1 (cg-RX-API-DMAC7.html) |
| AU (1) | AU2002216935A1 (cg-RX-API-DMAC7.html) |
| BR (1) | BR0115497A (cg-RX-API-DMAC7.html) |
| DE (2) | DE10058578C2 (cg-RX-API-DMAC7.html) |
| ES (1) | ES2273923T3 (cg-RX-API-DMAC7.html) |
| IN (1) | IN2003DE00736A (cg-RX-API-DMAC7.html) |
| WO (1) | WO2002041414A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (154)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10135513B4 (de) | 2001-07-20 | 2005-02-24 | Novaled Gmbh | Lichtemittierendes Bauelement mit organischen Schichten |
| US6603150B2 (en) * | 2001-09-28 | 2003-08-05 | Eastman Kodak Company | Organic light-emitting diode having an interface layer between the hole-transporting layer and the light-emitting layer |
| US7141817B2 (en) * | 2001-11-30 | 2006-11-28 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US20100026176A1 (en) | 2002-03-28 | 2010-02-04 | Jan Blochwitz-Nomith | Transparent, Thermally Stable Light-Emitting Component Having Organic Layers |
| DE10215210B4 (de) * | 2002-03-28 | 2006-07-13 | Novaled Gmbh | Transparentes, thermisch stabiles lichtemittierendes Bauelement mit organischen Schichten |
| EP2192632B1 (en) * | 2002-04-12 | 2014-09-03 | Konica Corporation | Organic Electroluminescence Element |
| DE10224021B4 (de) * | 2002-05-24 | 2006-06-01 | Novaled Gmbh | Phosphoreszentes lichtemittierendes Bauelement mit organischen Schichten |
| CN100565960C (zh) * | 2003-04-02 | 2009-12-02 | 富士胶片株式会社 | 有机电致发光元件和有机电致发光显示器 |
| DE10339772B4 (de) * | 2003-08-27 | 2006-07-13 | Novaled Gmbh | Licht emittierendes Bauelement und Verfahren zu seiner Herstellung |
| TWI407830B (zh) | 2003-09-26 | 2013-09-01 | Semiconductor Energy Lab | 發光元件和其製法 |
| EP2276088B1 (en) | 2003-10-03 | 2018-02-14 | Semiconductor Energy Laboratory Co, Ltd. | Light emitting element, and light emitting device using the light emitting element |
| DE602004025026D1 (de) * | 2003-10-29 | 2010-02-25 | Philips Intellectual Property | Lichtaussendendes gerät mit verbesserter quantenausbeute |
| DE10357044A1 (de) * | 2003-12-04 | 2005-07-14 | Novaled Gmbh | Verfahren zur Dotierung von organischen Halbleitern mit Chinondiiminderivaten |
| US8796670B2 (en) * | 2003-12-26 | 2014-08-05 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element |
| US20060017057A1 (en) * | 2004-07-20 | 2006-01-26 | Cumpston Brian H | Device structure to improve OLED reliability |
| TWI270318B (en) * | 2004-03-30 | 2007-01-01 | Osram Opto Semiconductors Gmbh | Device structure to improve OLED reliability |
| DE102004022004B4 (de) * | 2004-05-03 | 2007-07-05 | Novaled Ag | Schichtanordnung für eine organische lichtemittierende Diode |
| JP2006295104A (ja) | 2004-07-23 | 2006-10-26 | Semiconductor Energy Lab Co Ltd | 発光素子およびそれを用いた発光装置 |
| US7540978B2 (en) | 2004-08-05 | 2009-06-02 | Novaled Ag | Use of an organic matrix material for producing an organic semiconductor material, organic semiconductor material and electronic component |
| WO2006015567A1 (de) | 2004-08-13 | 2006-02-16 | Novaled Ag | Schichtanordnung für ein lichtemittierendes bauelement |
| CN1738069A (zh) | 2004-08-17 | 2006-02-22 | 国际商业机器公司 | 其电极具有增强注入特性的电子器件制造方法和电子器件 |
| KR101251622B1 (ko) | 2004-09-24 | 2013-04-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광장치 |
| DE602004006275T2 (de) | 2004-10-07 | 2007-12-20 | Novaled Ag | Verfahren zur Dotierung von einem Halbleitermaterial mit Cäsium |
| WO2006046678A1 (en) | 2004-10-29 | 2006-05-04 | Semiconductor Energy Laboratory Co., Ltd. | Composite material, light-emittintg element, light-emitting device, and manufacturing method thereof |
| EP1705727B1 (de) * | 2005-03-15 | 2007-12-26 | Novaled AG | Lichtemittierendes Bauelement |
| US8420227B2 (en) * | 2005-03-23 | 2013-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Composite material, light emitting element and light emitting device |
| US7851989B2 (en) | 2005-03-25 | 2010-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| DE502005002218D1 (de) | 2005-04-13 | 2008-01-24 | Novaled Ag | Anordnung für eine organische Leuchtdiode vom pin-Typ und Verfahren zum Herstellen |
| US8057916B2 (en) | 2005-04-20 | 2011-11-15 | Global Oled Technology, Llc. | OLED device with improved performance |
| EP1724852A3 (en) | 2005-05-20 | 2010-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element, light emitting device, and electronic device |
| DE502005009415D1 (de) * | 2005-05-27 | 2010-05-27 | Novaled Ag | Transparente organische Leuchtdiode |
| US8334057B2 (en) | 2005-06-08 | 2012-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device |
| WO2006131565A1 (fr) | 2005-06-10 | 2006-12-14 | Thomson Licensing | Diode organique electroluminescente ne comprenant au plus que deux couches de materiaux organiques differents |
| US7745989B2 (en) | 2005-06-30 | 2010-06-29 | Semiconductor Energy Laboratory Co., Ltd | Light emitting element, light emitting device, and electronic apparatus |
| EP1739765A1 (de) * | 2005-07-01 | 2007-01-03 | Novaled AG | Organische Leuchtdiode und Anordnung mit mehreren organischen Leuchtdioden |
| WO2007051753A1 (fr) | 2005-11-04 | 2007-05-10 | Thomson Licensing | Élement electro-optique integrant une diode organique electroluminescente et un transistor organique de modulation de cette diode. |
| KR100752383B1 (ko) * | 2005-12-26 | 2007-08-27 | 삼성에스디아이 주식회사 | 유기전계발광소자 및 그 제조방법 |
| EP1806795B1 (de) | 2005-12-21 | 2008-07-09 | Novaled AG | Organisches Bauelement |
| DE602006001930D1 (de) * | 2005-12-23 | 2008-09-04 | Novaled Ag | tur von organischen Schichten |
| EP1968131A4 (en) | 2005-12-27 | 2009-08-19 | Idemitsu Kosan Co | MATERIAL FOR AN ORGANIC ELECTROLUMINESCENCE DEVICE AND ORGANIC ELECTROLUMINESCENCE DEVICE |
| WO2007080801A1 (ja) | 2006-01-11 | 2007-07-19 | Idemitsu Kosan Co., Ltd. | 新規イミド誘導体、有機エレクトロルミネッセンス素子用材料及びそれを用いた有機エレクトロルミネッセンス素子 |
| EP1808909A1 (de) | 2006-01-11 | 2007-07-18 | Novaled AG | Elekrolumineszente Lichtemissionseinrichtung |
| KR101625224B1 (ko) * | 2006-02-09 | 2016-05-27 | 큐디 비젼, 인크. | 반도체 나노결정 및 도핑된 유기 물질을 포함하는 층을 포함하는 소자 및 방법 |
| WO2007096538A2 (fr) * | 2006-02-27 | 2007-08-30 | Commissariat A L'energie Atomique | Diode organique electroluminescente a electrode transparente multi-couche. |
| ATE556440T1 (de) * | 2006-02-28 | 2012-05-15 | Commissariat Energie Atomique | Elektronische komponente mit p-dotiertem organischem halbleiter |
| KR20080105127A (ko) | 2006-03-30 | 2008-12-03 | 이데미쓰 고산 가부시키가이샤 | 유기 전계발광 소자용 재료 및 이것을 사용한 유기 전계발광 소자 |
| EP1848049B1 (de) * | 2006-04-19 | 2009-12-09 | Novaled AG | Lichtemittierendes Bauelement |
| EP1860709B1 (de) * | 2006-05-24 | 2012-08-08 | Novaled AG | Verwendung von quadratisch planaren Übergangsmetallkomplexen als Dotand |
| EP2047535A2 (en) * | 2006-07-19 | 2009-04-15 | Philips Intellectual Property & Standards GmbH | Highly doped electro-optically active organic diode with short protection layer |
| GB2440368A (en) * | 2006-07-26 | 2008-01-30 | Oled T Ltd | Cathode coating for an electroluminescent device |
| DE102006052029B4 (de) | 2006-09-22 | 2020-01-09 | Osram Oled Gmbh | Lichtemittierende Vorrichtung |
| US8884322B2 (en) | 2006-09-22 | 2014-11-11 | Osram Opto Semiconductor Gmbh | Light-emitting device |
| DE102006059509B4 (de) | 2006-12-14 | 2012-05-03 | Novaled Ag | Organisches Leuchtbauelement |
| CN101558507A (zh) * | 2006-12-15 | 2009-10-14 | 出光兴产株式会社 | 有机电致发光元件用材料以及有机电致发光元件 |
| CN101569027B (zh) * | 2006-12-20 | 2011-02-09 | 汤姆森特许公司 | 具有由双极材料制成的阻挡层的有机发光二极管 |
| KR100826002B1 (ko) * | 2007-03-28 | 2008-04-29 | 엘지디스플레이 주식회사 | 유기전계발광소자 |
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- 2001-11-20 ES ES01996894T patent/ES2273923T3/es not_active Expired - Lifetime
- 2001-11-20 AT AT01996894T patent/ATE341837T1/de not_active IP Right Cessation
- 2001-11-20 KR KR20037006815A patent/KR100641900B1/ko not_active Expired - Lifetime
- 2001-11-20 CN CNB018191924A patent/CN100369286C/zh not_active Expired - Lifetime
- 2001-11-20 AU AU2002216935A patent/AU2002216935A1/en not_active Abandoned
- 2001-11-20 BR BR0115497-4A patent/BR0115497A/pt not_active Application Discontinuation
- 2001-11-20 DE DE50111165T patent/DE50111165D1/de not_active Expired - Fee Related
- 2001-11-20 US US10/432,173 patent/US7074500B2/en not_active Expired - Lifetime
- 2001-11-20 WO PCT/DE2001/004422 patent/WO2002041414A1/de not_active Ceased
- 2001-11-20 JP JP2002543714A patent/JP3695714B2/ja not_active Expired - Lifetime
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2003
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| EP1336208A1 (de) | 2003-08-20 |
| DE10058578A1 (de) | 2002-06-06 |
| ATE341837T1 (de) | 2006-10-15 |
| DE10058578C2 (de) | 2002-11-28 |
| CN100369286C (zh) | 2008-02-13 |
| AU2002216935A1 (en) | 2002-05-27 |
| JP2004514257A (ja) | 2004-05-13 |
| ES2273923T3 (es) | 2007-05-16 |
| US20040062949A1 (en) | 2004-04-01 |
| KR20030072355A (ko) | 2003-09-13 |
| JP3695714B2 (ja) | 2005-09-14 |
| BR0115497A (pt) | 2003-10-21 |
| CN1475035A (zh) | 2004-02-11 |
| IN2003DE00736A (cg-RX-API-DMAC7.html) | 2006-05-12 |
| US7074500B2 (en) | 2006-07-11 |
| EP1336208B1 (de) | 2006-10-04 |
| DE50111165D1 (de) | 2006-11-16 |
| WO2002041414A1 (de) | 2002-05-23 |
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