TWI270318B - Device structure to improve OLED reliability - Google Patents
Device structure to improve OLED reliability Download PDFInfo
- Publication number
- TWI270318B TWI270318B TW094109560A TW94109560A TWI270318B TW I270318 B TWI270318 B TW I270318B TW 094109560 A TW094109560 A TW 094109560A TW 94109560 A TW94109560 A TW 94109560A TW I270318 B TWI270318 B TW I270318B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- thickness
- component
- hole transport
- device structure
- Prior art date
Links
- 229920000642 polymer Polymers 0.000 abstract description 10
- 239000010410 layer Substances 0.000 abstract 4
- 239000011229 interlayer Substances 0.000 abstract 1
- 230000005525 hole transport Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 5
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- -1 poly(p-phenylenevinylene) Polymers 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 229930192474 thiophene Natural products 0.000 description 2
- 125000005259 triarylamine group Chemical group 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/18—Carrier blocking layers
- H10K50/181—Electron blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/114—Poly-phenylenevinylene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/115—Polyfluorene; Derivatives thereof
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
- Led Devices (AREA)
Abstract
Description
1270318 8 ·如申請專利範圍第1項之元件，其中該元件係被用以製作 OLED顯示器。 9.如申請專利範圍第8項之元件，其中該Ο LED顯示器在性質上 係被動矩陣。 10 ·如申請專利範圍第2項之元件，其中發光聚合物層和電洞傳輸 層的組合厚度係保持固定，電洞傳輸層的厚度會隨發光聚合物 層厚度的增加而減少。 1 1·如申請專利範圍第8項之元件，其中該OLED顯示器在性質上 係主動矩陣。 12.—種具有複數個堆疊層之有機發光二極體（OLED)元件，包含 電洞傳輸層； 在兩相鄰層之間，具有大於8〇nm厚度之發光聚合物層；及 插在該電洞傳輸層和該發光聚合物層之間的中間層，該中間 層至少提供下列其中一項之功能： a) 幫助電洞注入到該發光聚合物層； b) 阻擋電子遷移到該電洞傳輸層；及 c) 減少激子抑制。 1 3 ·如申請專利範圍第1 2項之元件，還包含： 陽極層，該陽極層毗鄰該電涧傳輸層。 14. 如申請專利範圍第13項之元件，還包含： 陰極層。 15. 如申請專利範圍第13項之元件，其中該電洞傳輸層和該發光 聚合物層係至少使用一種有機材料％ 。 1270318 16.如申請專利範圍第15項之元件，其中該發光聚合物層係至少 使用選擇性沉積技術和非選擇性沉積技術其中之—者被形成。 丨7.如申請專利範圍第16項之元件，其中該選擇性沉積技術包含 噴墨列印。 1 8.如申請專利範圍弟1 6項之元件，其中該非選擇性沉積技術包 含旋佈。 19.如申目靑專利fe圍第12項之元件，其中該元件係被用以製作 OLED顯示器。 •2。·如申請專利範圍第19項之元件，其中_該。LED顯示器在性質 上係被動矩陣。 2 1 .如申請專利範圍第1 3項之元件，其中發光聚合物層和電洞傳 輸層的組合厚度係保持固定的，電洞傳輸層的厚度會隨發光聚 合物層厚度的增加而減少。 22. 如申請專利範圍第19項之元件，其中該〇LED顯示器在性質 上係主動矩陣。 23. 如申請專利範圍第1項之元件，其中該電洞傳輸層具有約3〇nm 胃之厚度。 24. 如申請專利範圍第12項之元件，其中該電洞傳輸層具有約 30nm之厚度。 25. 如申請專利範圍第1項之元件，其中該中間層係使用下列至少 —種材料形成··聚（2,7_(9,9-二-辛基芴）_)ι，4-苯撐-((4-另丁苯 基）亞氣基）-1,4-苯撐），聚（p_苯撐乙烯撐）之非發射形式，三芳 基胺型材料和噻吩。 2 6 _如申請專利範圍第1 2項之元件，其中該中間層係使用下列至 1270318 少一種材料形成：聚（2,7-(a，a-二-辛基芴）-(l，4-苯撐-((4-另丁 苯基）亞氨基）-1，4-苯撐），聚（p-苯撐乙烯撐）之非發射形式，三 芳基胺型材料和噻吩。 27.如申請專利範圍第1項之元件，其中該中間層具有從約5nm 到約1 0 0 n m之厚度。 2 8.如申請專利範圍第1項之元件，其中該中間層具有從約10nm 到約30nm之厚度。 2 9 .如申請專利範圍第1 2項之元件，其中該中間層具有從約5 n m 到約1 Ο 0 n m之厚度。 3 0.如申請專利範圍第12項之元件，其中該中間層具有從約lOnm 到約3 0 n m之厚度。1270318 8 • An element as claimed in claim 1 wherein the element is used to make an OLED display. 9. The component of claim 8 wherein the Ο LED display is passive in nature. 10. The component of claim 2, wherein the combined thickness of the luminescent polymer layer and the hole transport layer remains fixed, and the thickness of the hole transport layer decreases as the thickness of the luminescent polymer layer increases. 1 1. The component of claim 8 wherein the OLED display is active in an active matrix. 12. An organic light emitting diode (OLED) device having a plurality of stacked layers, comprising a hole transport layer; a light emitting polymer layer having a thickness greater than 8 nm between two adjacent layers; An intermediate layer between the hole transport layer and the luminescent polymer layer, the intermediate layer providing at least one of the following functions: a) assisting in hole injection into the luminescent polymer layer; b) blocking electron migration to the hole Transport layer; and c) reduce exciton suppression. 1 3 . The component of claim 12, further comprising: an anode layer adjacent to the electroconductive transport layer. 14. The component of claim 13 of the patent scope further comprising: a cathode layer. 15. The element of claim 13 wherein the hole transport layer and the luminescent polymer layer use at least one organic material. The element of claim 15 wherein the luminescent polymer layer is formed using at least a selective deposition technique and a non-selective deposition technique.丨 7. The element of claim 16 wherein the selective deposition technique comprises ink jet printing. 1 8. The component of claim 16 of the patent application, wherein the non-selective deposition technique comprises a spinner. 19. The component of claim 12, wherein the component is used to fabricate an OLED display. •2. · For example, the component of claim 19, where _. LED displays are passive in nature. 2 1. The element of claim 13 wherein the combined thickness of the luminescent polymer layer and the hole transport layer remains fixed, and the thickness of the hole transport layer decreases as the thickness of the luminescent polymer layer increases. 22. The component of claim 19, wherein the 〇LED display is an active matrix in nature. 23. The element of claim 1, wherein the hole transport layer has a thickness of about 3 〇 nm stomach. 24. The element of claim 12, wherein the hole transport layer has a thickness of about 30 nm. 25. The component of claim 1, wherein the intermediate layer is formed using at least one of the following materials: poly(2,7-(9,9-di-octylfluorene))), iphenylene -((4-Butylphenyl)methane)-1,4-phenylene), a non-emitting form of poly(p-phenylenevinylene), a triarylamine type material and thiophene. 2 6 _ As claimed in the scope of claim 12, wherein the intermediate layer is formed using one of the following materials to 1270318: poly(2,7-(a,a-di-octylfluorene)-(l,4) - phenylene-((4-butylphenyl)imino)-1,4-phenylene), a non-emitting form of poly(p-phenylenevinylene), a triarylamine type material and thiophene. The element of claim 1 wherein the intermediate layer has a thickness of from about 5 nm to about 100 nm. 2 8. The element of claim 1, wherein the intermediate layer has from about 10 nm to about 30 nm. The thickness of the material of claim 12, wherein the intermediate layer has a thickness of from about 5 nm to about 1 Ο 0 nm. 3 0. The component of claim 12, wherein The intermediate layer has a thickness of from about 10 nm to about 30 nm.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US55746404P | 2004-03-30 | 2004-03-30 | |
| US86914704A | 2004-06-15 | 2004-06-15 | |
| US10/895,862 US20060017057A1 (en) | 2004-07-20 | 2004-07-20 | Device structure to improve OLED reliability |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200607389A TW200607389A (en) | 2006-02-16 |
| TWI270318B true TWI270318B (en) | 2007-01-01 |
Family
ID=34970783
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094109560A TWI270318B (en) | 2004-03-30 | 2005-03-28 | Device structure to improve OLED reliability |
Country Status (2)
| Country | Link |
|---|---|
| TW (1) | TWI270318B (en) |
| WO (1) | WO2005096401A2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1811579A1 (en) * | 2006-01-18 | 2007-07-25 | STMicroelectronics S.r.l. | Galvanic optocoupler structure and corresponding hybrid integration process |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9805476D0 (en) * | 1998-03-13 | 1998-05-13 | Cambridge Display Tech Ltd | Electroluminescent devices |
| JP2000196140A (en) * | 1998-12-28 | 2000-07-14 | Sharp Corp | Organic electroluminescence element and fabrication thereof |
| DE10058578C2 (en) * | 2000-11-20 | 2002-11-28 | Univ Dresden Tech | Light-emitting component with organic layers |
| US6670053B2 (en) * | 2002-02-26 | 2003-12-30 | Eastman Kodak Company | Organic electroluminescent devices with high luminance |
-
2005
- 2005-03-28 TW TW094109560A patent/TWI270318B/en not_active IP Right Cessation
- 2005-03-30 WO PCT/EP2005/003331 patent/WO2005096401A2/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2005096401A3 (en) | 2005-11-10 |
| TW200607389A (en) | 2006-02-16 |
| WO2005096401A2 (en) | 2005-10-13 |
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| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |