KR100609277B1 - 포토레지스트용 박리액 및 이를 사용한 포토레지스트의박리방법 - Google Patents

포토레지스트용 박리액 및 이를 사용한 포토레지스트의박리방법 Download PDF

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Publication number
KR100609277B1
KR100609277B1 KR1020020045748A KR20020045748A KR100609277B1 KR 100609277 B1 KR100609277 B1 KR 100609277B1 KR 1020020045748 A KR1020020045748 A KR 1020020045748A KR 20020045748 A KR20020045748 A KR 20020045748A KR 100609277 B1 KR100609277 B1 KR 100609277B1
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KR
South Korea
Prior art keywords
photoresist
peeling
component
substrate
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020020045748A
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English (en)
Korean (ko)
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KR20030035827A (ko
Inventor
요꼬이시게루
와끼야가즈마사
Original Assignee
도오꾜오까고오교 가부시끼가이샤
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Publication of KR20030035827A publication Critical patent/KR20030035827A/ko
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Publication of KR100609277B1 publication Critical patent/KR100609277B1/ko
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Preventing Corrosion Or Incrustation Of Metals (AREA)
KR1020020045748A 2001-08-03 2002-08-02 포토레지스트용 박리액 및 이를 사용한 포토레지스트의박리방법 Expired - Fee Related KR100609277B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00235884 2001-08-03
JP2001235884 2001-08-03
JPJP-P-2001-00392290 2001-12-25
JP2001392290A JP3403187B2 (ja) 2001-08-03 2001-12-25 ホトレジスト用剥離液

Publications (2)

Publication Number Publication Date
KR20030035827A KR20030035827A (ko) 2003-05-09
KR100609277B1 true KR100609277B1 (ko) 2006-08-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020045748A Expired - Fee Related KR100609277B1 (ko) 2001-08-03 2002-08-02 포토레지스트용 박리액 및 이를 사용한 포토레지스트의박리방법

Country Status (5)

Country Link
US (4) US20030114014A1 (https=)
JP (1) JP3403187B2 (https=)
KR (1) KR100609277B1 (https=)
CN (1) CN1244023C (https=)
TW (1) TWI295417B (https=)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3738996B2 (ja) * 2002-10-10 2006-01-25 東京応化工業株式会社 ホトリソグラフィー用洗浄液および基板の処理方法
JP3797541B2 (ja) * 2001-08-31 2006-07-19 東京応化工業株式会社 ホトレジスト用剥離液
JP4443864B2 (ja) * 2002-07-12 2010-03-31 株式会社ルネサステクノロジ レジストまたはエッチング残さ物除去用洗浄液および半導体装置の製造方法
DE10331033B4 (de) * 2002-07-12 2010-04-29 Ekc Technology K.K. R&D Business Park Bldg. D-3F, Kawasaki Herstellungsverfahren einer Halbleitervorrichtung und Reinigungszusammensetzung dafür
JP4282054B2 (ja) * 2002-09-09 2009-06-17 東京応化工業株式会社 デュアルダマシン構造形成プロセスに用いられる洗浄液および基板の処理方法
US7166419B2 (en) 2002-09-26 2007-01-23 Air Products And Chemicals, Inc. Compositions substrate for removing etching residue and use thereof
US20040115934A1 (en) * 2002-12-13 2004-06-17 Jerry Broz Method of improving contact resistance
US7037849B2 (en) * 2003-06-27 2006-05-02 Taiwan Semiconductor Manufacturing Company, Ltd. Process for patterning high-k dielectric material
US20050089489A1 (en) * 2003-10-22 2005-04-28 Carter Melvin K. Composition for exfoliation agent effective in removing resist residues
KR101117939B1 (ko) * 2003-10-28 2012-02-29 사켐,인코포레이티드 세척액 및 에칭제 및 이의 사용 방법
WO2005057281A2 (en) * 2003-12-02 2005-06-23 Advanced Technology Materials, Inc. Resist, barc and gap fill material stripping chemical and method
JP2005209953A (ja) * 2004-01-23 2005-08-04 Tokyo Ohka Kogyo Co Ltd 剥離洗浄液、該剥離洗浄液を用いた半導体基板洗浄方法および金属配線形成方法
JP4369284B2 (ja) 2004-04-19 2009-11-18 東友ファインケム株式会社 レジスト剥離剤
KR100593446B1 (ko) 2004-05-19 2006-06-28 삼성전자주식회사 유기성 플루오라이드 계열 완충 용액을 사용해서 반도체장치를 제조하는 방법들
US20060003910A1 (en) * 2004-06-15 2006-01-05 Hsu Jiun Y Composition and method comprising same for removing residue from a substrate
US8030263B2 (en) * 2004-07-01 2011-10-04 Air Products And Chemicals, Inc. Composition for stripping and cleaning and use thereof
US9217929B2 (en) * 2004-07-22 2015-12-22 Air Products And Chemicals, Inc. Composition for removing photoresist and/or etching residue from a substrate and use thereof
US20070054482A1 (en) * 2004-08-10 2007-03-08 Takahito Nakajima Semiconductor device fabrication method
JP4463054B2 (ja) * 2004-09-17 2010-05-12 東京応化工業株式会社 ホトレジスト用剥離液およびこれを用いた基板の処理方法
US7846349B2 (en) * 2004-12-22 2010-12-07 Applied Materials, Inc. Solution for the selective removal of metal from aluminum substrates
US7888302B2 (en) * 2005-02-03 2011-02-15 Air Products And Chemicals, Inc. Aqueous based residue removers comprising fluoride
US7682458B2 (en) * 2005-02-03 2010-03-23 Air Products And Chemicals, Inc. Aqueous based residue removers comprising fluoride
KR101238471B1 (ko) * 2005-02-25 2013-03-04 이케이씨 테크놀로지, 인코포레이티드 구리 및 저 ｋ 유전체 물질을 갖는 기판으로부터 레지스트,에칭 잔류물 및 구리 산화물을 제거하는 방법
JP4988165B2 (ja) * 2005-03-11 2012-08-01 関東化学株式会社 フォトレジスト剥離液組成物及びフォトレジストの剥離方法
JP2008535250A (ja) * 2005-04-04 2008-08-28 マリンクロッド・ベイカー・インコーポレイテッド 配線の前工程でイオン注入されたフォトレジストを洗浄するための組成物
WO2006119252A2 (en) 2005-04-29 2006-11-09 University Of Rochester Ultrathin nanoscale membranes, methods of making, and uses thereof
EP1874443A4 (en) 2005-04-29 2009-09-16 Univ Rochester ULTRA-THAN POROUS NANOSCAL MEMBRANES, MANUFACTURING METHOD AND USES THEREOF
JP4678673B2 (ja) * 2005-05-12 2011-04-27 東京応化工業株式会社 ホトレジスト用剥離液
WO2006129538A1 (ja) * 2005-06-01 2006-12-07 Nissan Chemical Industries, Ltd. ホスホン酸を含む半導体ウェハ洗浄用組成物及び洗浄方法
KR101285123B1 (ko) * 2005-08-25 2013-07-19 주식회사 동진쎄미켐 투명 전도막 및 레지스트 제거용 박리액 조성물
US7632796B2 (en) * 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US9329486B2 (en) 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US8263539B2 (en) * 2005-10-28 2012-09-11 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and methods for its use
KR20080072905A (ko) * 2005-11-09 2008-08-07 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 표면에 저유전 물질이 있는 반도체 웨이퍼를 재생하기 위한조성물 및 방법
US20070151949A1 (en) * 2006-01-04 2007-07-05 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor processes and apparatuses thereof
JP2009529888A (ja) * 2006-03-14 2009-08-27 ユニバーシティ オブ ロチェスター 超薄多孔質メンブレンを有する細胞培養装置およびその使用
TWI323391B (en) * 2006-03-21 2010-04-11 Daxin Material Corp Remover solution composition and use thereof
KR100770217B1 (ko) 2006-06-12 2007-10-26 삼성전자주식회사 포토레지스트 제거용 조성물 및 이를 이용한 범프 전극의형성 방법
JP4884889B2 (ja) * 2006-08-31 2012-02-29 東京応化工業株式会社 フォトレジスト用剥離液およびこれを用いた基板の処理方法
JP4642001B2 (ja) * 2006-10-24 2011-03-02 関東化学株式会社 フォトレジスト残渣及びポリマー残渣除去液組成物
US7872978B1 (en) * 2008-04-18 2011-01-18 Link—A—Media Devices Corporation Obtaining parameters for minimizing an error event probability
TWI450052B (zh) * 2008-06-24 2014-08-21 黛納羅伊有限責任公司 用於後段製程操作有效之剝離溶液
US8481472B2 (en) * 2008-10-09 2013-07-09 Avantor Performance Materials, Inc. Aqueous acidic formulations for copper oxide etch residue removal and prevention of copper electrodeposition
US8398779B2 (en) * 2009-03-02 2013-03-19 Applied Materials, Inc. Non destructive selective deposition removal of non-metallic deposits from aluminum containing substrates
TWI516879B (zh) * 2009-09-09 2016-01-11 東友精細化工有限公司 形成銅系配線用光阻剝離劑組成物、使用其來製造半導體裝置及平板顯示器之方法
JP5827623B2 (ja) * 2009-09-18 2015-12-02 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ インクジェット印刷可能なエッチングインク及び関連する方法
TWI539493B (zh) 2010-03-08 2016-06-21 黛納羅伊有限責任公司 用於摻雜具有分子單層之矽基材之方法及組合物
US9145618B2 (en) 2010-11-29 2015-09-29 Northeastern University High rate electric field driven nanoelement assembly on an insulated surface
US8449681B2 (en) * 2010-12-16 2013-05-28 Intermolecular, Inc. Composition and method for removing photoresist and bottom anti-reflective coating for a semiconductor substrate
JP5871562B2 (ja) 2011-11-01 2016-03-01 東京応化工業株式会社 フォトリソグラフィ用剥離液及びパターン形成方法
US8987181B2 (en) 2011-11-08 2015-03-24 Dynaloy, Llc Photoresist and post etch residue cleaning solution
US9158202B2 (en) 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
TW201527284A (zh) * 2013-11-11 2015-07-16 Huntsman Petrochemical Llc 新穎光阻去除劑
US10073351B2 (en) * 2014-12-23 2018-09-11 Versum Materials Us, Llc Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation
US10312073B2 (en) * 2017-04-28 2019-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Selective removal of carbon-containing and nitrogen-containing silicon residues
CN107589637A (zh) * 2017-08-29 2018-01-16 昆山艾森半导体材料有限公司 一种含氟铝线清洗液
CN109890143A (zh) * 2018-08-09 2019-06-14 苏州纳勒电子科技有限公司 一种能够对膜很好剥离的去膜液

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02135352A (ja) * 1988-11-17 1990-05-24 Oki Electric Ind Co Ltd 剥離液
JPH08202052A (ja) * 1995-01-31 1996-08-09 Tokyo Ohka Kogyo Co Ltd レジスト用剥離液組成物
JP2001005200A (ja) * 1999-06-21 2001-01-12 Nagase Denshi Kagaku Kk レジスト剥離剤組成物及びその使用方法
US20010051318A1 (en) * 2000-06-08 2001-12-13 Shipley Company, L.L.C. Of Marlborough, Massachusetts Stripper pretreatment

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2626992B2 (ja) * 1988-05-10 1997-07-02 富士写真フイルム株式会社 感光性平版印刷版用現像液組成物及び現像方法
US5304252A (en) * 1989-04-06 1994-04-19 Oliver Sales Company Method of removing a permanent photoimagable film from a printed circuit board
DE69210095T2 (de) * 1991-05-29 1996-09-19 Fuji Photo Film Co Ltd Feuchtwasserkonzentrat für Litho-Druck
US6326130B1 (en) * 1993-10-07 2001-12-04 Mallinckrodt Baker, Inc. Photoresist strippers containing reducing agents to reduce metal corrosion
JP3264405B2 (ja) 1994-01-07 2002-03-11 三菱瓦斯化学株式会社 半導体装置洗浄剤および半導体装置の製造方法
JP3236220B2 (ja) 1995-11-13 2001-12-10 東京応化工業株式会社 レジスト用剥離液組成物
JPH10151413A (ja) 1996-09-25 1998-06-09 Chugoku Marine Paints Ltd 重防食用塗料組成物の塗装方法およびこの方法により塗装された塗装品
US6030932A (en) * 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
JPH10209604A (ja) 1997-01-17 1998-08-07 Hitachi Ltd プリント配線基板の製造方法並びにそれに用いる粗化液及び粗化液の調製方法
JP3830057B2 (ja) 1997-03-24 2006-10-04 堺化学工業株式会社 さび止め剤とそれを用いたさび止め塗料およびさび止め液
JPH10265979A (ja) 1997-03-27 1998-10-06 Nitto Chem Ind Co Ltd 銅材用防食剤組成物
JPH1116882A (ja) 1997-06-19 1999-01-22 Toray Fine Chem Co Ltd フォトレジスト剥離用組成物
JP2000096049A (ja) 1998-09-18 2000-04-04 Asahi Kagaku Kogyo Co Ltd 金属の酸洗浄用腐食抑制剤、それを含んだ洗浄液組成物およびこれを用いる金属の洗浄方法
JP2000199087A (ja) 1999-01-07 2000-07-18 Mitsubishi Rayon Co Ltd 除錆剤組成物
JP4114296B2 (ja) 1999-01-20 2008-07-09 住友化学株式会社 金属の腐食防止剤及び洗浄液
JP4202542B2 (ja) 1999-08-05 2008-12-24 花王株式会社 剥離剤組成物
JP3389166B2 (ja) 1999-09-10 2003-03-24 日本電気株式会社 レジスト用剥離液組成物
JP3410403B2 (ja) 1999-09-10 2003-05-26 東京応化工業株式会社 ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法
KR100360397B1 (ko) * 1999-11-26 2002-11-18 삼성전자 주식회사 레지스트 제거용 조성물 및 이를 이용한 레지스트 제거 방법
JP2001183850A (ja) * 1999-12-27 2001-07-06 Sumitomo Chem Co Ltd 剥離剤組成物
US6531436B1 (en) * 2000-02-25 2003-03-11 Shipley Company, L.L.C. Polymer removal
JP2002016034A (ja) * 2000-06-30 2002-01-18 Mitsubishi Electric Corp 半導体装置の製造方法、及び半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02135352A (ja) * 1988-11-17 1990-05-24 Oki Electric Ind Co Ltd 剥離液
JPH08202052A (ja) * 1995-01-31 1996-08-09 Tokyo Ohka Kogyo Co Ltd レジスト用剥離液組成物
JP2001005200A (ja) * 1999-06-21 2001-01-12 Nagase Denshi Kagaku Kk レジスト剥離剤組成物及びその使用方法
US20010051318A1 (en) * 2000-06-08 2001-12-13 Shipley Company, L.L.C. Of Marlborough, Massachusetts Stripper pretreatment

Also Published As

Publication number Publication date
KR20030035827A (ko) 2003-05-09
JP3403187B2 (ja) 2003-05-06
US8192923B2 (en) 2012-06-05
US20050084792A1 (en) 2005-04-21
US20080011714A1 (en) 2008-01-17
US20070037087A1 (en) 2007-02-15
TWI295417B (https=) 2008-04-01
US20030114014A1 (en) 2003-06-19
JP2003114539A (ja) 2003-04-18
CN1244023C (zh) 2006-03-01
CN1402090A (zh) 2003-03-12

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