Classifications

• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/42—Stripping or agents therefor
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/42—Stripping or agents therefor
  • G03F7/422—Stripping or agents therefor using liquids only
  • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/42—Stripping or agents therefor
  • G03F7/422—Stripping or agents therefor using liquids only
  • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/42—Stripping or agents therefor
  • G03F7/422—Stripping or agents therefor using liquids only
  • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P50/00—Etching of wafers, substrates or parts of devices
  • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
  • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
  • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
  • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P70/00—Cleaning of wafers, substrates or parts of devices
  • H10P70/20—Cleaning during device manufacture
  • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
  • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE

Definitions

• This invention relates to a photoresist stripping solution and a method of stripping photoresists using the same. More particularly, it relates to a photoresist stripping solution which is excellent in protecting both Al- and Cu-based wiring conductors and other metal conductors from corrosion and in stripping photoresist films and post-ashing residues; and a method of photoresists using the same.
• the present invention is suitable for use in the fabrication of semiconductor devices such as ICs and LSIs, as well as liquid-crystal panel apparatus.
• the fabrication of semiconductor devices such as ICs and LSIs, as well as liquid-crystal panel apparatus comprises forming a uniform photoresist coating over conductive metallic layers, insulation layers such as an SiO 2 film formed on a substrate (silicon wafer) by CVD; performing selective exposure and development to form a photoresist pattern; selectively etching the substrate having the conductive metallic layers, the insulation layers formed thereon using the photoresist pattern as a mask to thereby form a microcircuit; and then removing the unwanted photoresist layer with a stripping solution.
• various organic stripping solutions has been used from safety and strippability standpoints.
• Examples of the conductive metallic layers formed by CVD as described above include those of aluminum (Al); aluminum alloys (Al alloys) such as aluminum-silicon (Al—Si), aluminum copper (Al—Cu) and aluminum-silicon-copper (Al—Si—Cu); titanium (Ti); titanium alloys (Ti alloys) such as titanium nitride (TiN) and titanium-tungsten (TiW); tantalum (Ta), tantalum nitride (TaN), tungsten (W), tungsten nitride (WN) and copper (Cu). These conductive metallic films are formed in one or more layers on the substrate.
• Si-based residues Si-based depositions
• etching of metallic layers and ashing treatment builds up metal depositions. Such post-ashing residues or depositions should be completely stripped away so as to keep good yields in the fabrication of semiconductors.
• Examples of stripping solutions containing hydrofluoric acid as the main component include: a resist stripping solution composition of pH 5-8 containing a salt of hydrofluoric acid with a base free from metal ions, a water-soluble organic solvent and water optionally together with a corrosion inhibitor (JP-A-9-197681); and a cleaner for semiconductor devices containing a quaternary ammonium salt and a fluorine compound, and further adding a water-soluble organic solvent (JP-A-7-201794).
• the resist stripping solution composition in JP-A-9-197681 is to a certain extent effective in strippability and anti-corrosivity on semiconductor devices having Al wiring conductors, however, it fails to exert any satisfactory effect of protecting devices having Cu wiring conductors from corrosion.
• JP-A-2000-273666 teaches a cleaner solution containing a sulfur-based corrosion inhibitor for protecting Cu wiring conductors from corrosion.
• a sulfur-based corrosion inhibitor for protecting Cu wiring conductors from corrosion.
• any satisfactory strippability for Cu-based metallic depositions (residues) also cannot be established by using this cleaner solution.
• the present invention has been accomplished under these circumstances and has as an object of providing a photoresist stripping solution that is suitable for use in the photolithographic technology to form today's semiconductor and liquid-crystal display devices having an ever decreasing feature size and an increasing number of interlevel films superposed on the substrate, and that can assure effective protection of Al, Cu and other wiring metal conductors against corrosion as well as efficient stripping of the photoresist film and post-ashing residues.
• the present invention provides a photoresist stripping solution which comprises (a) a salt of hydrof luoric acid with a base free from metal ions, (b) a water-soluble organic solvent, (c) a mercapto group containing corrosion inhibitor, and (d) water.
• the present invention also provides a photoresist stripping solution which further contains, in addition to components (a)-(d), with the proviso that component (a) is ammonium fluoride, (e) a salt of hydrofluoric acid with a quaternary ammonium hydroxide represented by the following general formula (I) and/or an alkanolamine:
• R 1 , R 2 , R 3 and R 4 are each independently an alkyl group or a hydroxyalkyl group having 1 to 4 carbon atoms.
• the present invention furthermore provides a method of stripping photoresists which comprises forming a photoresist pattern on a substrate, etching the substrate using the photoresist as a mask, and thereafter stripping away the photoresist pattern from the substrate using the photoresist stripping solution as described above.
• the present invention still furthermore provides a method of stripping photoresists which comprises forming a photoresist pattern on a substrate, etching the substrate using the photoresist as a mask, then plasma ashing the photoresist pattern, and thereafter stripping away post-plasma ashing residues from the substrate using the photoresist stripping solution as described above.
• component (a) is a salt of hydrofluoric acid with a base free from metal ions.
• the base free from metal ions include hydroxylamines, organic amines such as primary, secondary or tertiary aliphatic amines, alicyclic amines, aromatic amines and heterocyclic amines, aqueous ammonia, and lower alkyl quaternary ammonium hydroxides.
• hydroxylamines include hydroxylamine (NH 2 OH), N-methylhydroxylamine, N,N-dimethylhydroxylamine and N,N-diethylhydroxylamine.
• primary aliphatic amines include monoethanolamine, ethylenediamine and 2-(2-aminoethylamino)ethanol.
• secondary aliphatic amines include diethanolamine, N-methylaminoethanol, dipropylamine and 2-ethylaminoethanol.
• tertiary aliphatic amines include dimethylaminoethanol and ethyldiethanolamine.
• alicyclic amines include cyclohexylamine and dicyclohexylamine.
• aromatic amines include benzylamine, dibenzylamine and N-methylbenzylamine.
• heterocyclic amines include pyrrole, pyrrolidine, pyrrolidone, pyridine, morpholine, pyrazine, piperidine, N-hydroxyethylpiperidine, oxazole and thiazole.
• lower alkyl quaternary ammonium salts include tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide, tetrapropylammonium hydroxide, trimethylethylammonium hydroxide, (2-hydroxyethyl)trimethylammonium hydroxide, (2-hydroxyethyl)triethylammonium hydroxide, (2-hydroxyethyl)tripropylammonium hydroxide and (1-hydroxypropyl)trimethylammonium hydroxide.
• TMAH tetramethylammonium hydroxide
• TMAH tetraethylammonium hydroxide
• tetrapropylammonium hydroxide trimethylethylammonium hydroxide
• (2-hydroxyethyl)trimethylammonium hydroxide (2-hydroxyethyl)triethylammonium hydroxide
• aqueous ammonia, monoethanolamine, N-methylaminoethanol, tetramethylammonium hydroxide and (2-hydroxyethyl)trimethylammonium hydroxide are preferable from availability and safety standpoints.
• the bases free from metal ions may be used either alone or in combination with one another.
• the salt of hydrofluoric acid with the base free from metal ions may be prepared using a commercially available hydrofluoric acid having a concentration of 50-60% and adding thereto the base free from metal ions.
• As the salt ammonium fluoride (NH 4 F) may be the most desirable.
• Either one or more salts may be used as component (a).
• the content of component (a) preferably ranges 0.1-10 mass percent, still preferably 0.2-3 mass percent in the stripping solution of the invention. In case where the content of component (a) is too large, Cu wiring conductors tend to corrode. In case where its content is too small, on the other hand, the strippability is liable to be lowered.
• component (b) that is a water-soluble organic solvent use may be made of those commonly employed in the art.
• a water-soluble organic solvent is not specifically restricted so long as it is miscible with water and other components employed in the present invention.
• Specific examples thereof include: sulfoxides, such as dimethyl sulfoxide; sulfones, such as dimethyl sulfone, diethyl sulfone, bis(2-hydroxyethyl)sulfone and tetramethylene sulfone; amides, such as N,N-dimethylformamide, N-methylformamide, N,N-dimethylacetamide, N-methylacetamide and N,N-diethylacetamide; lactams, such as N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N-propyl-2-pyrrolidone, N-hydroxymethyl-2-pyrrolidone and N-hydroxyethyl-2-pyrrol
• dimethylformamide N-methyl-2-pyrrolidone and dimethyl sulfoxide.
• Dimethylformamide is the most desirable since it can be easily handled after stripping treatment.
• Either one or more solvents may be used as component (b).
• the content of component (b) preferably ranges 30-80 mass percent, still preferably 40-75 mass percent in the stripping solution of the present invention. In case where the content of component (b) is too large, the strippability is liable to be lowered. In case where its content is too small, on the other hand, various metal wiring conductors tend to corrode.
• the mercapto group containing corrosion inhibitor to be used as component (c) is not specifically restricted so long as it can protect metal atoms employed in wiring conductors (in particular, Al wiring or Cu wiring) from corrosion, it is preferable to use a compound having in its structure a hydroxyl group and/or a carboxyl group at least one of the ⁇ - and ⁇ -positions.
• a compound having in its structure a hydroxyl group and/or a carboxyl group at least one of the ⁇ - and ⁇ -positions include 1-thioglycerol, 3-(2-aminophenylthio)-2-hydroxypropylmercaptan, 3-(2-hydroxyethylthio)-2-hydroxypropylmercaptan, 2-mercaptopropionic acid and 3-mercaptopropionic acid.
• component (c) is used as a corrosion inhibitor to thereby achieve an excellent effect of protecting Al and Cu wiring conductors from corrosion as well as an effect of preventing precipitation of the corrosion inhibitor.
• component (c) Either one or more compounds may be used as component (c).
• the content of component (c) preferably ranges 0.1-10 mass percent, still preferably 0.2-5 mass percent in the stripping solution of the invention. In case where the content of component (a) is too small, there is a fear that insufficient effect may be provided for protecting in particular Cu wiring conductors from corrosion.
• Component (d) in the stripping solution of the invention is water. Although some water is contained inevitably in other components, water is intentionally added to adjust the content. The content of component (d) is the balance of the stripping solution of the present invention.
• the stripping solution of the invention may further incorporate into the stripping solution (e) a salt of hydrof luoric acid with a quaternary ammonium hydroxide represented by the following general formula (I) and/or an alkanolamine:
• R 1 , R 2 , R 3 and R 4 are each independently an alkyl group or a hydroxyalkyl group having 1 to 4 carbon atoms.
• Use of component (e) contributes to the improvement in the strippability without seriously damaging Cu.
• quaternary ammonium hydroxide represented by the general formula (I) include tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, monomethyltripleammonium hydroxide, trimethylethylammonium hydroxide, (2-hydroxyethyl)trimethylammonium hydroxide, (2-hydroxyethyl)triethylammonium hydroxide, (2-hydroxyethyl)tripropylammonium hydroxide and (1-hydroxypropyl)trimethylammonium hydroxide.
• TMAH tetramethylammonium hydroxide
• TMAH tetraethylammonium hydroxide
• tetrapropylammonium hydroxide tetrabutylammonium hydroxide
• monomethyltripleammonium hydroxide trimethylethyl
• TMAH tetraethylammonium hydroxide
• tetrapropylammonium hydroxide tetrabutylammonium hydroxide
• monomethyltripleammonium hydroxide 2-hydroxyethyl)trimethylammoniumhydroxide, etc.
• alkanolamines examples include monoethanolamine, diethanolamine, triethanolamine, 2-(2-aminoethoxy)ethanol, N,N-dimethylethanolamine, N,N-diethylethanolamine, N,N-dibutylethanolamine, N-methylethanolamine, N-ethylethanolamine, N-butylethanolamine, N-methyldiethanolamine, monoisopropanolamine, diisopropanolamine and triisopropanolamine.
• N-methylethanolamine is particularly preferable in terms of protecting Cu wiring conductors from corrosion.
• component (e) Either one or more compounds may be used as component (e).
• the content of component (e) preferably ranges 0.1-10 mass percent, still preferably 0.2-3 mass percent in the stripping solution of the invention. In case where the content of component (e) is too large, Al wiring conductors tend to corrode.
• component (e) in case of using component (e) in the present invention, it is preferable to adjust the composition ratio of ammonium fluoride employed as component (a) to component (e) [ammonium fluoride: component (e)] to from 2:8 to 8:2 by mass, still preferably from 3:7 to 7:3.
• the composition ratio of fluoride ammonium to component (e) within the range as specified above, metal wiring conductors can be more efficiently protected from corrosion.
• Al-based wiring conductors are prone to corrode.
• Cu-based wiring conductors are prone to corrode.
• the stripping solution of the invention may further contain, as an optional component, an acetylene alcohol/alkylene oxide adduct prepared by adding an alkylene oxide to an acetylene alcohol.
• R 5 is a hydrogen atom or a group represented by the following formula (III);
• R 6 , R 7 , R 8 and R 9 are each independently a hydrogen atom or an alkyl group having 1-6 carbon atoms.
• acetylene alcohols are commercially available under trade names of “Surfynol” and “Olfin” series (both are produced by Air Products and Chemicals Inc.).
• “Surfynol 104”, “Surfynol 82” or mixtures thereof are most preferred for the physical properties.
• Use can be also made of “Olfin B”, “Olfin P”, “Olfin Y” etc.
• alkylene oxide to be added to the acetylene alcohol as described above it is preferred to use ethylene oxide, propylene oxide or a mixture thereof.
• R 10 is a hydrogen atom or a group represented by the following formula (V):
• R 11 , R 12 , R 13 and R 14 are each independently a hydrogen atom or an alkyl group having 1-6 carbon atoms; (n+m) is an integer of 1 to 30, which is the number of ethylene oxide molecules added. This number subtly affects the properties of the compound such as water solubility and surface tension.
• acetylene alcohol/alkylene oxide adducts per se are known as surfactants. These products are commercially available under the trade name “Surfynol” series (products of Air Product and Chemicals Inc.) and “Acetylenol” series (products of Kawaken Fine Chemicals Co., Ltd.) and have been appropriately utilized.
• a mixture of “Acetylenol EL” with “Acetylenol EH” in a mass ratio of 2:8 to 4:6 is particularly desirable.
• the stripping solution of the invention contains the acetylene alcohol/alkylene oxide adduct
• the content thereof is preferably 0.05-5 mass percent, more preferably 0.1-2 mass percent.
• the content exceeds the upper limit as defined above, it tends to cause foaming but the wetting properties cannot be improved any more.
• the content is less than the lower limit as defined above, on the other hand, the desired improvement in the wetting properties can be scarcely obtained.
• the stripping solution of the invention may further contain an acidic compound.
• the acidic compound include hydrof luoric acid, acetic acid and glycolic acid.
• its content is preferably 1 mass percent or less.
• the photoresist stripping solution of the invention can advantageously be used with all photoresists, whether negative- or positive-working, that can be developed with aqueous alkaline solutions.
• photoresists include, but are not limited to, (i) a positive-working photoresist containing a naphthoquinonediazide compound and a novolak resin, (ii) a positive-working photoresist containing a compound that generates an acid upon exposure, a compound that decomposes with an acid to have a higher solubility in aqueous alkali solutions, and an alkali-soluble resin, (iii) a positive-working photoresist containing a compound that generates an acid upon exposure and an alkali-soluble resin having a group that decomposes with an acid to have a higher solubility in aqueous alkali solutions, and (iv) a negative-working photoresist containing a compound that generates an acid upon illumination with
• photoresists are stripped away by one of two methods which have the following steps in common: forming a photoresist pattern by lithography on a substrate having conductive metallic layers, insulation layers and low-dielectric layers thereon, and selectively etching the layers with the photoresist pattern used as a mask to form a fine-line circuit. After these steps, the photoresist pattern is immediately stripped away (method I), or the etched photoresist pattern is subjected to plasma ashing and thereby post-ashing residues, such as the modified photoresist film (photoresist film residue) and metal deposition, are stripped away (method II).
• An example of method I in which the photoresist film is stripped away immediately after etching comprises:
• An example of method II in which the modified photoresist film and metal deposition resulting from plasma ashing are stripped away after etching comprises:
• the specific advantage of the present invention resides in that the photoresist stripping solution has excellent effects of stripping photoresist films and post-ashing residues (modified photoresist films, metal depositions, etc.) and protecting a substrate having metal conductors from corrosion both in stripping away photoresists formed on a substrate having Al wiring conductors and formed on a substrate having Cu wiring conductors.
• Examples of the metal wiring conductors include, but are not limited to, those made of aluminum (Al); aluminum alloys such as aluminum copper (Al—Cu) and aluminum-silicon-copper (Al—Si—Cu); titanium (Ti); titanium alloys (Ti alloys) such as titanium nitride (TiN) and titanium-tungsten (TiW); and copper (Cu).
• any conventional means may be employed without particular limitation.
• the photoresist is usually stripped by the dip, shower or paddle method.
• the stripping time is not limited to any duration as long as it is sufficient to achieve removal of the photoresist.
• a silicon wafer having an SiO 2 layer formed thereon was used as a substrate.
• a TiN layer, an Al—Si—Cu layer and another TiN layer were successively formed thereon respectively as the first, second and third layers.
• the topmost layer was spin-coated with a positive-working photoresist (TDUR-P015 of Tokyo Ohka Kogyo Co., Ltd.), which was prebaked at 80° C. for 90 seconds to form a photoresist layer 0.7 ⁇ m thick.
• the photoresist layer was exposed through a mask pattern using FPA 3000 EX3 (Canon Inc.), then subjected to post-exposure bake at 110° C. for 90 seconds and developed with an aqueous solution of 2.38 mass percent tetraammonium hydroxide (TMAH) to form a photoresist pattern of 400 nm in line-and-space. Subsequently it was subjected to dry etching and plasma ashing.
• FPA 3000 EX3 Canon Inc.
• a silicon wafer having Cu layer that is overlaid with an SiO 2 layer formed by plasma CVD was used as a substrate.
• the substrate was spin-coated with a positive-working photoresist (TDUR-P015 of Tokyo Ohka Kogyo Co., Ltd.), which was prebaked at 80° C. for 90 seconds to form a photoresist layer 0.7 ⁇ m thick.
• TDUR-P015 of Tokyo Ohka Kogyo Co., Ltd.
• the photoresist layer was exposed through a mask pattern using FPA 3000 EX3 (Canon Inc.), then subjected to post-exposure bake at 110° C. for 90 seconds and developed with an aqueous solution of 2.38 mass percent tetraammonium hydroxide (TMAH) to form a hole pattern of 200 nm in diameter. Subsequently it was subjected to dry etching and plasma ashing.
• FPA 3000 EX3 Canon Inc.
• the strippability of the post-ashing residues was evaluated by using the substrate treated in treatment II.
• the substrate treated in treatment I was mainly used for Al wiring, and the one treated in treatment II was mainly used for Cu wiring.
• the precipitation of the corrosion inhibitor was evaluated by using the substrate treated in treatment II.
• an excellent photoresist stripping solution that causes no corrosion of Al and Cu wiring conductors or any other metals, has excellent strippability for photoresist films and post-ashing residues and is free from precipitation of a corrosion inhibitor.
• Use of the photoresist stripping solution of the present invention makes it possible to effectively protect both of devices having Al wiring conductors and devices having Cu wiring conductors from corrosion.

Landscapes

• Physics & Mathematics (AREA)
• General Physics & Mathematics (AREA)
• Photosensitive Polymer And Photoresist Processing (AREA)
• Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
• Cleaning Or Drying Semiconductors (AREA)
• Preventing Corrosion Or Incrustation Of Metals (AREA)

Priority Applications (3)

Applications Claiming Priority (4)

Related Child Applications (1)

Publications (1)

Family

ID=26619890

Family Applications (4)

Family Applications After (3)

Country Status (5)

Cited By (30)

Families Citing this family (27)

Citations (4)

Family Cites Families (22)

• 2001
  • 2001-12-25 JP JP2001392290A patent/JP3403187B2/ja not_active Expired - Lifetime
• 2002
  • 2002-07-31 US US10/208,096 patent/US20030114014A1/en not_active Abandoned
  • 2002-08-02 CN CNB021282196A patent/CN1244023C/zh not_active Expired - Lifetime
  • 2002-08-02 TW TW091117483A patent/TWI295417B/zh not_active IP Right Cessation
  • 2002-08-02 KR KR1020020045748A patent/KR100609277B1/ko not_active Expired - Fee Related
• 2004
  • 2004-10-27 US US10/973,302 patent/US20050084792A1/en not_active Abandoned
• 2006
  • 2006-08-14 US US11/503,189 patent/US20070037087A1/en not_active Abandoned
• 2007
  • 2007-09-10 US US11/898,174 patent/US8192923B2/en not_active Expired - Lifetime

Patent Citations (4)

Also Published As

Similar Documents

Legal Events