KR100546191B1 - 전자 부품의 수지 밀봉 성형 방법 및 상기 방법에이용되는 수지 밀봉 성형 장치 - Google Patents
전자 부품의 수지 밀봉 성형 방법 및 상기 방법에이용되는 수지 밀봉 성형 장치 Download PDFInfo
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- KR100546191B1 KR100546191B1 KR1020030058173A KR20030058173A KR100546191B1 KR 100546191 B1 KR100546191 B1 KR 100546191B1 KR 1020030058173 A KR1020030058173 A KR 1020030058173A KR 20030058173 A KR20030058173 A KR 20030058173A KR 100546191 B1 KR100546191 B1 KR 100546191B1
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- mold
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- release film
- resin sealing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/18—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles incorporating preformed parts or layers, e.g. compression moulding around inserts or for coating articles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/56—Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
- B29C33/68—Release sheets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
- H01L21/566—Release layers for moulds, e.g. release layers, layers against residue during moulding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
Abstract
Description
Claims (5)
- 한쪽의 주형면(main mold surface)(15a, 200a)을 갖는 제1의 형(mold)(1, 200)을 준비하는 단계와,상기 한쪽의 주형면(15a, 200a)에 대향하는 다른쪽의 주형면(15b, 200b)을 갖는 제2의 형(2, 100)을 준비하는 단계와,상기 한쪽의 주형면(15a, 200a)과 상기 다른쪽의 주형면과의 사이(15b, 200b)에 있어서 형 측면(12, 120)을 형성하는 제3의 형(3, 300)을 준비하는 단계와,상기 제1의 형(1, 200)에 전자 부품(11, 110)을 끼워넣는 단계와,상기 제2의 형(2, 100)과 상기 제3의 형(3, 300)을 이용하여 이형 필름(release film)(4, 400)을 끼워 넣고, 상기 이형 필름(4, 400)에 소정의 장력을 걸어서, 상기 이형 필름(4, 400)을 상기 다른쪽의 주형면(15b, 200b)에 밀착시키는 단계와,상기 제1의 형(1, 200), 상기 제2의 형(2, 100) 및 상기 제3의 형(3, 300)의 클램핑에 의해, 상기 한쪽의 주형면(15a, 200a), 상기 다른쪽의 주형면(15b, 200b) 및 상기 형 측면(12, 120)을 이용하여, 상기 전자 부품(11, 110)이 내포된 밀폐 공간(21, 210)을 형성하는 단계와,상기 밀폐 공간(21, 210) 내로 용융된 수지(20, 220)를 충전하는 단계와,상기 용융된 수지(20, 220)를 경화시킴으로써, 상기 전자 부품(11, 110)을 수지 밀봉 성형하는 단계를 구비하고 있는 것을 특징으로 하는 전자 부품의 수지 밀봉 성형 방법.
- 제 1항에 있어서,상기 클램핑 단계는,우선, 상기 제 2의 형(2, 100)과 상기 제 3의 형(3, 300)을 클램핑함과 함께, 이들의 양 형 사이에 상기 이형 필름(4, 400)을 끼워 넣고, 또한, 상기 이형 필름(4, 400)에 소정의 장력을 걸어서, 상기 이형 필름(4, 400)을 상기 다른쪽의 주형면(主型面)(15b, 200b)에 밀착시키는 단계를 수행하고,그 후에, 이 상태에서, 상기 제 3의 형(3, 300)과 상기 제 1의 형(1, 200)을 클램핑하는 단계를 수행하는 것을 특징으로 하는 전자 부품의 수지 밀봉 성형 방법.
- 제1항에 있어서,상기 이형 필름(4, 400)에 소정의 장력을 걸어서, 상기 이형 필름(4, 400)을 상기 다른쪽의 주형면(15b, 200b)에 밀착시키는 단계에서는 탄성 기구(16, 103, 17, 104)의 탄성력에 의해, 상기 이형 필름(4, 400)을 상기 제3의 형(3, 300)에 가압하는 것을 특징으로 하는 전자 부품의 수지 밀봉 성형 방법.
- 제1항에 있어서,상기 수지 밀봉 성형 단계는 상기 밀폐 공간(21, 210)을 진공으로 한 상태에 서 실행되는 것을 특징으로 하는 전자 부품의 수지 밀봉 성형 방법.
- 제1항에 기재된 전자 부품의 수지 밀봉 성형 방법의 각 상기 단계를 실행하기 위한 수단을 구비한 것을 특징으로 하는 전자 부품의 수지 밀봉 성형 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2002260894A JP4268389B2 (ja) | 2002-09-06 | 2002-09-06 | 電子部品の樹脂封止成形方法及び装置 |
JPJP-P-2002-00260894 | 2002-09-06 |
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KR20040022152A KR20040022152A (ko) | 2004-03-11 |
KR100546191B1 true KR100546191B1 (ko) | 2006-01-24 |
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KR1020030058173A KR100546191B1 (ko) | 2002-09-06 | 2003-08-22 | 전자 부품의 수지 밀봉 성형 방법 및 상기 방법에이용되는 수지 밀봉 성형 장치 |
Country Status (6)
Country | Link |
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US (1) | US6977188B2 (ko) |
EP (2) | EP1396323B1 (ko) |
JP (1) | JP4268389B2 (ko) |
KR (1) | KR100546191B1 (ko) |
DE (2) | DE60317864D1 (ko) |
TW (1) | TWI235703B (ko) |
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KR101052324B1 (ko) | 2011-03-23 | 2011-07-27 | 신한다이아몬드공업 주식회사 | 봉지재 성형 방법 |
KR101101669B1 (ko) | 2009-12-01 | 2011-12-30 | 삼성전기주식회사 | 전자부품 제조장치 및 전자부품 제조방법 |
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EP1189271A3 (en) | 1996-07-12 | 2003-07-16 | Fujitsu Limited | Wiring boards and mounting of semiconductor devices thereon |
JP3282988B2 (ja) * | 1997-05-01 | 2002-05-20 | アピックヤマダ株式会社 | 樹脂モールド方法及び樹脂モールド装置 |
JP3490606B2 (ja) | 1998-03-20 | 2004-01-26 | 富士通株式会社 | 半導体装置製造用金型 |
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Cited By (4)
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KR100980299B1 (ko) | 2008-02-27 | 2010-09-06 | 세크론 주식회사 | 전자 부품 몰딩 장치 |
KR101101669B1 (ko) | 2009-12-01 | 2011-12-30 | 삼성전기주식회사 | 전자부품 제조장치 및 전자부품 제조방법 |
KR101052324B1 (ko) | 2011-03-23 | 2011-07-27 | 신한다이아몬드공업 주식회사 | 봉지재 성형 방법 |
WO2012128444A1 (ko) * | 2011-03-23 | 2012-09-27 | 신한다이아몬드공업(주) | 봉지재 성형 방법 |
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KR20040022152A (ko) | 2004-03-11 |
US6977188B2 (en) | 2005-12-20 |
US20040048416A1 (en) | 2004-03-11 |
DE60317864D1 (de) | 2008-01-17 |
EP1396323A1 (en) | 2004-03-10 |
EP1803539A1 (en) | 2007-07-04 |
DE60321977D1 (de) | 2008-08-14 |
TWI235703B (en) | 2005-07-11 |
JP2004098364A (ja) | 2004-04-02 |
TW200406293A (en) | 2004-05-01 |
JP4268389B2 (ja) | 2009-05-27 |
EP1803539B1 (en) | 2008-07-02 |
EP1396323B1 (en) | 2007-12-05 |
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