KR100412001B1 - 반도체 기억 장치 및 그 제조 방법 - Google Patents

반도체 기억 장치 및 그 제조 방법 Download PDF

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Publication number
KR100412001B1
KR100412001B1 KR10-2001-0060506A KR20010060506A KR100412001B1 KR 100412001 B1 KR100412001 B1 KR 100412001B1 KR 20010060506 A KR20010060506 A KR 20010060506A KR 100412001 B1 KR100412001 B1 KR 100412001B1
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KR
South Korea
Prior art keywords
region
semiconductor substrate
gate electrode
resistance element
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR10-2001-0060506A
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English (en)
Korean (ko)
Other versions
KR20020025814A (ko
Inventor
시로따리이찌로
스기마에기꾸꼬
이찌게마사유끼
사또아쯔히로
하자마히로아끼
Original Assignee
가부시끼가이샤 도시바
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Publication date
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Publication of KR20020025814A publication Critical patent/KR20020025814A/ko
Application granted granted Critical
Publication of KR100412001B1 publication Critical patent/KR100412001B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H10B41/44—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a control gate layer also being used as part of the peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR10-2001-0060506A 2000-09-29 2001-09-28 반도체 기억 장치 및 그 제조 방법 Expired - Fee Related KR100412001B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2000-00301308 2000-09-29
JP2000301308A JP4313941B2 (ja) 2000-09-29 2000-09-29 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR20020025814A KR20020025814A (ko) 2002-04-04
KR100412001B1 true KR100412001B1 (ko) 2003-12-24

Family

ID=18782866

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-0060506A Expired - Fee Related KR100412001B1 (ko) 2000-09-29 2001-09-28 반도체 기억 장치 및 그 제조 방법

Country Status (4)

Country Link
US (3) US6667507B2 (https=)
JP (1) JP4313941B2 (https=)
KR (1) KR100412001B1 (https=)
TW (1) TW520569B (https=)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
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US6713346B2 (en) * 1999-03-01 2004-03-30 Micron Technology, Inc. Methods of forming a line of flash memory cells
US6624022B1 (en) * 2000-08-29 2003-09-23 Micron Technology, Inc. Method of forming FLASH memory
US6590255B2 (en) * 2000-09-29 2003-07-08 Kabushiki Kaisha Toshiba Semiconductor memory device having memory cell section and peripheral circuit section and method of manufacturing the same
US7064978B2 (en) * 2002-07-05 2006-06-20 Aplus Flash Technology, Inc. Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
JP4030839B2 (ja) * 2002-08-30 2008-01-09 スパンション エルエルシー メモリ集積回路装置の製造方法
US7302590B2 (en) * 2003-01-06 2007-11-27 Microsoft Corporation Systems and methods for providing time-and weight-based flexibly tolerant hardware ID
JP3851914B2 (ja) * 2003-07-09 2006-11-29 株式会社東芝 不揮発性半導体記憶装置
US7060561B2 (en) * 2004-02-25 2006-06-13 United Microelectronics Corp. Method for fabricating memory device
US7344942B2 (en) * 2005-01-26 2008-03-18 Micron Technology, Inc. Isolation regions for semiconductor devices and their formation
JP4113199B2 (ja) 2005-04-05 2008-07-09 株式会社東芝 半導体装置
JP4129009B2 (ja) 2005-05-31 2008-07-30 株式会社東芝 半導体集積回路装置
JP4764160B2 (ja) * 2005-12-21 2011-08-31 株式会社東芝 半導体装置
JP2007311566A (ja) 2006-05-18 2007-11-29 Toshiba Corp 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の製造方法
JP2007201494A (ja) * 2007-03-26 2007-08-09 Toshiba Corp 不揮発性半導体記憶装置
KR101374317B1 (ko) 2007-08-23 2014-03-14 삼성전자주식회사 저항 소자를 갖는 반도체 장치 및 그 형성방법
US7910973B2 (en) 2008-03-17 2011-03-22 Kabushiki Kaisha Toshiba Semiconductor storage device
JP4660567B2 (ja) * 2008-03-18 2011-03-30 株式会社東芝 半導体記憶装置
JP2009231445A (ja) * 2008-03-21 2009-10-08 Toshiba Corp 半導体記憶装置
JP2009267107A (ja) * 2008-04-25 2009-11-12 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
JP2010098067A (ja) 2008-10-15 2010-04-30 Toshiba Corp 半導体装置
US8284601B2 (en) 2009-04-01 2012-10-09 Samsung Electronics Co., Ltd. Semiconductor memory device comprising three-dimensional memory cell array
JP2012043856A (ja) * 2010-08-16 2012-03-01 Toshiba Corp 半導体装置およびその製造方法
TWI400464B (zh) * 2011-02-11 2013-07-01 Etron Technology Inc 具有外部測試電壓的電路
JP2013207123A (ja) 2012-03-29 2013-10-07 Toshiba Corp 半導体装置
JP2015050346A (ja) * 2013-09-02 2015-03-16 株式会社東芝 不揮発性半導体記憶装置およびその製造方法
CN112216689A (zh) * 2019-07-12 2021-01-12 长鑫存储技术有限公司 半导体结构及其制作方法
KR102909210B1 (ko) * 2020-07-14 2026-01-07 삼성전자주식회사 비휘발성 메모리 장치 및 이의 동작 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63160097A (ja) * 1986-12-24 1988-07-02 Toshiba Corp 半導体不揮発性メモリ
KR0183877B1 (ko) * 1996-06-07 1999-03-20 김광호 불휘발성 메모리 장치 및 그 제조방법
US6342715B1 (en) * 1997-06-27 2002-01-29 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
JP3602691B2 (ja) 1997-06-27 2004-12-15 株式会社東芝 不揮発性半導体記憶装置およびその製造方法
JP3586072B2 (ja) * 1997-07-10 2004-11-10 株式会社東芝 不揮発性半導体記憶装置
JP3547955B2 (ja) * 1997-10-16 2004-07-28 株式会社ルネサステクノロジ 半導体装置
JP3742230B2 (ja) 1998-08-28 2006-02-01 株式会社東芝 電流発生回路
KR100275741B1 (ko) * 1998-08-31 2000-12-15 윤종용 비휘발성 기억소자의 제조방법
US6717233B1 (en) * 1999-02-01 2004-04-06 Bae Systems Information And Electronic Systems Integration, Inc. Method for fabricating resistors within semiconductor integrated circuit devices
US6228713B1 (en) * 1999-06-28 2001-05-08 Chartered Semiconductor Manufacturing Ltd. Self-aligned floating gate for memory application using shallow trench isolation
US6590255B2 (en) 2000-09-29 2003-07-08 Kabushiki Kaisha Toshiba Semiconductor memory device having memory cell section and peripheral circuit section and method of manufacturing the same
JP4008651B2 (ja) 2000-10-31 2007-11-14 株式会社東芝 半導体装置とその製造方法

Also Published As

Publication number Publication date
US20020038884A1 (en) 2002-04-04
US6977409B2 (en) 2005-12-20
TW520569B (en) 2003-02-11
US20060033151A1 (en) 2006-02-16
US6667507B2 (en) 2003-12-23
KR20020025814A (ko) 2002-04-04
JP4313941B2 (ja) 2009-08-12
JP2002110825A (ja) 2002-04-12
US7361951B2 (en) 2008-04-22
US20040081002A1 (en) 2004-04-29

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