KR100319896B1 - 반도체 소자의 본딩 패드 구조 및 그 제조 방법 - Google Patents

반도체 소자의 본딩 패드 구조 및 그 제조 방법 Download PDF

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Publication number
KR100319896B1
KR100319896B1 KR1019990062154A KR19990062154A KR100319896B1 KR 100319896 B1 KR100319896 B1 KR 100319896B1 KR 1019990062154 A KR1019990062154 A KR 1019990062154A KR 19990062154 A KR19990062154 A KR 19990062154A KR 100319896 B1 KR100319896 B1 KR 100319896B1
Authority
KR
South Korea
Prior art keywords
conductive film
continuous
bonding pad
island
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019990062154A
Other languages
English (en)
Korean (ko)
Other versions
KR20000048406A (ko
Inventor
이수철
손경목
신헌종
안종현
이혜령
Original Assignee
윤종용
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윤종용, 삼성전자 주식회사 filed Critical 윤종용
Priority to KR1019990062154A priority Critical patent/KR100319896B1/ko
Priority to JP11375282A priority patent/JP2000195866A/ja
Publication of KR20000048406A publication Critical patent/KR20000048406A/ko
Priority to US09/745,241 priority patent/US6552438B2/en
Application granted granted Critical
Publication of KR100319896B1 publication Critical patent/KR100319896B1/ko
Priority to JP2007098534A priority patent/JP5209224B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07551—Controlling the environment, e.g. atmosphere composition or temperature characterised by changes in properties of the bond wires during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H10W72/9232—Bond pads having multiple stacked layers with additional elements interposed between layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
KR1019990062154A 1998-06-24 1999-12-24 반도체 소자의 본딩 패드 구조 및 그 제조 방법 Expired - Fee Related KR100319896B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019990062154A KR100319896B1 (ko) 1998-12-28 1999-12-24 반도체 소자의 본딩 패드 구조 및 그 제조 방법
JP11375282A JP2000195866A (ja) 1998-12-28 1999-12-28 半導体素子のボンディングパッド構造及びその製造方法
US09/745,241 US6552438B2 (en) 1998-06-24 2000-12-21 Integrated circuit bonding pads including conductive layers with arrays of unaligned spaced apart insulating islands therein and methods of forming same
JP2007098534A JP5209224B2 (ja) 1998-12-28 2007-04-04 半導体素子のボンディングパッド構造の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR19980059418 1998-12-28
KR1019980059418 1998-12-28
KR1019990062154A KR100319896B1 (ko) 1998-12-28 1999-12-24 반도체 소자의 본딩 패드 구조 및 그 제조 방법

Publications (2)

Publication Number Publication Date
KR20000048406A KR20000048406A (ko) 2000-07-25
KR100319896B1 true KR100319896B1 (ko) 2002-01-10

Family

ID=26634489

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990062154A Expired - Fee Related KR100319896B1 (ko) 1998-06-24 1999-12-24 반도체 소자의 본딩 패드 구조 및 그 제조 방법

Country Status (2)

Country Link
JP (2) JP2000195866A (https=)
KR (1) KR100319896B1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000195896A (ja) 1998-12-25 2000-07-14 Nec Corp 半導体装置
WO2001078145A2 (en) * 2000-04-12 2001-10-18 Koninklijke Philips Electronics N.V. Boding pad in semiconductor device
JP3434793B2 (ja) 2000-09-29 2003-08-11 Ｎｅｃエレクトロニクス株式会社 半導体装置とその製造方法
KR100500416B1 (ko) * 2000-11-15 2005-07-12 주식회사 하이닉스반도체 반도체 소자의 패드 제조 방법
KR100421043B1 (ko) * 2000-12-21 2004-03-04 삼성전자주식회사 비정렬되고 소정 거리 이격된 섬형 절연체들의 배열을 갖는 도전막을 포함하는 집적 회로 본딩 패드
US7692315B2 (en) 2002-08-30 2010-04-06 Fujitsu Microelectronics Limited Semiconductor device and method for manufacturing the same
JP2004095916A (ja) * 2002-08-30 2004-03-25 Fujitsu Ltd 半導体装置及びその製造方法
JP4579621B2 (ja) * 2003-09-26 2010-11-10 パナソニック株式会社 半導体装置
EP1519411A3 (en) 2003-09-26 2010-01-13 Panasonic Corporation Semiconductor device and method for fabricating the same
US6960836B2 (en) * 2003-09-30 2005-11-01 Agere Systems, Inc. Reinforced bond pad
JP4759229B2 (ja) * 2004-05-12 2011-08-31 ルネサスエレクトロニクス株式会社 半導体装置
JP2006024698A (ja) 2004-07-07 2006-01-26 Toshiba Corp 半導体装置及びその製造方法
KR100675275B1 (ko) * 2004-12-16 2007-01-26 삼성전자주식회사 반도체 장치 및 이 장치의 패드 배치방법
JP4452217B2 (ja) 2005-07-04 2010-04-21 富士通マイクロエレクトロニクス株式会社 半導体装置
JP4757660B2 (ja) * 2006-02-27 2011-08-24 エルピーダメモリ株式会社 半導体装置
WO2010125639A1 (ja) 2009-04-28 2010-11-04 三菱電機株式会社 電力用半導体装置
JP7809080B2 (ja) 2023-01-27 2026-01-30 三菱電機株式会社 ボンディングパッド、集積回路素子、及び集積回路装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06326150A (ja) * 1993-05-12 1994-11-25 Sony Corp パッド構造
JPH0817859A (ja) * 1994-07-04 1996-01-19 Mitsubishi Electric Corp 半導体装置
JPH08213422A (ja) * 1995-02-07 1996-08-20 Mitsubishi Electric Corp 半導体装置およびそのボンディングパッド構造
KR100200700B1 (ko) * 1996-02-29 1999-06-15 윤종용 다층 패드를 구비하는 반도체장치 및 그 제조방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57172752A (en) * 1981-04-16 1982-10-23 Fujitsu Ltd Semiconductor device
JPS61239646A (ja) * 1985-04-16 1986-10-24 Nec Corp 多層配線の形成方法
JP2916326B2 (ja) * 1992-06-11 1999-07-05 三菱電機株式会社 半導体装置のパッド構造
US5248903A (en) * 1992-09-18 1993-09-28 Lsi Logic Corporation Composite bond pads for semiconductor devices
JPH06196525A (ja) * 1992-12-24 1994-07-15 Kawasaki Steel Corp ボンディングパッドの構造
JPH08162532A (ja) * 1994-12-05 1996-06-21 Sony Corp 半導体装置の製造方法
JPH08293523A (ja) * 1995-02-21 1996-11-05 Seiko Epson Corp 半導体装置およびその製造方法
JPH09162290A (ja) * 1995-12-04 1997-06-20 Ricoh Co Ltd 半導体集積回路装置
JP3482779B2 (ja) * 1996-08-20 2004-01-06 セイコーエプソン株式会社 半導体装置およびその製造方法
JP2001085465A (ja) * 1999-09-16 2001-03-30 Matsushita Electronics Industry Corp 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06326150A (ja) * 1993-05-12 1994-11-25 Sony Corp パッド構造
JPH0817859A (ja) * 1994-07-04 1996-01-19 Mitsubishi Electric Corp 半導体装置
JPH08213422A (ja) * 1995-02-07 1996-08-20 Mitsubishi Electric Corp 半導体装置およびそのボンディングパッド構造
KR100200700B1 (ko) * 1996-02-29 1999-06-15 윤종용 다층 패드를 구비하는 반도체장치 및 그 제조방법

Also Published As

Publication number Publication date
JP5209224B2 (ja) 2013-06-12
JP2007194663A (ja) 2007-08-02
JP2000195866A (ja) 2000-07-14
KR20000048406A (ko) 2000-07-25

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