KR0137124B1 - Pattern forming method - Google Patents
Pattern forming methodInfo
- Publication number
- KR0137124B1 KR0137124B1 KR93014801A KR930014801A KR0137124B1 KR 0137124 B1 KR0137124 B1 KR 0137124B1 KR 93014801 A KR93014801 A KR 93014801A KR 930014801 A KR930014801 A KR 930014801A KR 0137124 B1 KR0137124 B1 KR 0137124B1
- Authority
- KR
- South Korea
- Prior art keywords
- forming method
- pattern forming
- semiconductor substrate
- metal film
- desired region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2065—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam using corpuscular radiation other than electron beams
-
- H10P76/00—
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
- G03F7/2043—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means with the production of a chemical active agent from a fluid, e.g. an etching agent; with meterial deposition from the fluid phase, e.g. contamination resists
-
- H10P34/40—
-
- H10P50/695—
-
- H10P76/405—
-
- H10P76/4085—
-
- H10P95/00—
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Electrodes Of Semiconductors (AREA)
- Steroid Compounds (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Glass Compositions (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20493892A JP3334911B2 (ja) | 1992-07-31 | 1992-07-31 | パターン形成方法 |
| JP92-204938 | 1992-07-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR940006196A KR940006196A (ko) | 1994-03-23 |
| KR0137124B1 true KR0137124B1 (en) | 1998-04-29 |
Family
ID=16498841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR93014801A Expired - Fee Related KR0137124B1 (en) | 1992-07-31 | 1993-07-31 | Pattern forming method |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5861233A (cg-RX-API-DMAC10.html) |
| EP (1) | EP0581280B1 (cg-RX-API-DMAC10.html) |
| JP (1) | JP3334911B2 (cg-RX-API-DMAC10.html) |
| KR (1) | KR0137124B1 (cg-RX-API-DMAC10.html) |
| AT (1) | ATE185430T1 (cg-RX-API-DMAC10.html) |
| DE (1) | DE69326651T2 (cg-RX-API-DMAC10.html) |
| TW (1) | TW238363B (cg-RX-API-DMAC10.html) |
Families Citing this family (312)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH09205070A (ja) * | 1996-01-25 | 1997-08-05 | Sony Corp | プラズマcvd方法、およびこれにより形成された金属膜を有する半導体装置 |
| FR2757881B1 (fr) * | 1996-12-31 | 1999-04-09 | Univ Paris Curie | Procede de traitement d'une surface d'un semi-conducteur, dispositif correspondant et semi-conducteur associe |
| US6153452A (en) * | 1997-01-07 | 2000-11-28 | Lucent Technologies Inc. | Method of manufacturing semiconductor devices having improved polycide integrity through introduction of a silicon layer within the polycide structure |
| US6872322B1 (en) | 1997-11-12 | 2005-03-29 | Applied Materials, Inc. | Multiple stage process for cleaning process chambers |
| US6797188B1 (en) | 1997-11-12 | 2004-09-28 | Meihua Shen | Self-cleaning process for etching silicon-containing material |
| US6136211A (en) | 1997-11-12 | 2000-10-24 | Applied Materials, Inc. | Self-cleaning etch process |
| US6583065B1 (en) * | 1999-08-03 | 2003-06-24 | Applied Materials Inc. | Sidewall polymer forming gas additives for etching processes |
| US6491835B1 (en) * | 1999-12-20 | 2002-12-10 | Applied Materials, Inc. | Metal mask etching of silicon |
| US6527968B1 (en) | 2000-03-27 | 2003-03-04 | Applied Materials Inc. | Two-stage self-cleaning silicon etch process |
| US7115523B2 (en) * | 2000-05-22 | 2006-10-03 | Applied Materials, Inc. | Method and apparatus for etching photomasks |
| FR2811316B1 (fr) * | 2000-07-06 | 2003-01-10 | Saint Gobain | Substrat texture transparent et procedes pour l'obtenir |
| US6664030B1 (en) * | 2000-11-17 | 2003-12-16 | Advanced Micro Devices, Inc. | System for and method of constructing an alternating phase-shifting mask |
| US6589717B1 (en) * | 2000-11-17 | 2003-07-08 | Advanced Micro Devices, Inc. | Photon assisted deposition of hard mask formation for use in manufacture of both devices and masks |
| US6673524B2 (en) * | 2000-11-17 | 2004-01-06 | Kouros Ghandehari | Attenuating extreme ultraviolet (EUV) phase-shifting mask fabrication method |
| US6534224B2 (en) | 2001-01-30 | 2003-03-18 | Advanced Micro Devices, Inc. | Phase shift mask and system and method for making the same |
| US6524170B2 (en) * | 2001-03-19 | 2003-02-25 | Brookhaven Science Associates, Llc | Method of surface preparation of niobium |
| US20030003374A1 (en) * | 2001-06-15 | 2003-01-02 | Applied Materials, Inc. | Etch process for photolithographic reticle manufacturing with improved etch bias |
| WO2003021659A1 (en) | 2001-09-04 | 2003-03-13 | Applied Materials, Inc. | Methods and apparatus for etching metal layers on substrates |
| US6749970B2 (en) | 2001-12-11 | 2004-06-15 | Advanced Micro Devices, Inc. | Method of enhancing clear field phase shift masks with border regions around phase 0 and phase 180 regions |
| US6675369B1 (en) | 2001-12-11 | 2004-01-06 | Advanced Micro Devices, Inc. | Method of enhancing clear field phase shift masks by adding parallel line to phase 0 region |
| US6797438B1 (en) | 2001-12-11 | 2004-09-28 | Advanced Micro Devices, Inc. | Method and enhancing clear field phase shift masks with border around edges of phase regions |
| US6749971B2 (en) | 2001-12-11 | 2004-06-15 | Advanced Micro Devices, Inc. | Method of enhancing clear field phase shift masks with chrome border around phase 180 regions |
| US6960413B2 (en) * | 2003-03-21 | 2005-11-01 | Applied Materials, Inc. | Multi-step process for etching photomasks |
| US7077973B2 (en) * | 2003-04-18 | 2006-07-18 | Applied Materials, Inc. | Methods for substrate orientation |
| US20040224524A1 (en) * | 2003-05-09 | 2004-11-11 | Applied Materials, Inc. | Maintaining the dimensions of features being etched on a lithographic mask |
| US7521000B2 (en) * | 2003-08-28 | 2009-04-21 | Applied Materials, Inc. | Process for etching photomasks |
| US7829243B2 (en) | 2005-01-27 | 2010-11-09 | Applied Materials, Inc. | Method for plasma etching a chromium layer suitable for photomask fabrication |
| KR100944846B1 (ko) * | 2006-10-30 | 2010-03-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 마스크 에칭 프로세스 |
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1996
- 1996-06-11 US US08/662,200 patent/US5861233A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0581280A2 (en) | 1994-02-02 |
| TW238363B (cg-RX-API-DMAC10.html) | 1995-01-11 |
| JPH0653188A (ja) | 1994-02-25 |
| JP3334911B2 (ja) | 2002-10-15 |
| DE69326651T2 (de) | 2000-04-20 |
| EP0581280B1 (en) | 1999-10-06 |
| KR940006196A (ko) | 1994-03-23 |
| US5861233A (en) | 1999-01-19 |
| DE69326651D1 (de) | 1999-11-11 |
| EP0581280A3 (en) | 1995-12-13 |
| ATE185430T1 (de) | 1999-10-15 |
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