JPWO2022244802A5 - - Google Patents
Download PDFInfo
- Publication number
- JPWO2022244802A5 JPWO2022244802A5 JP2023522695A JP2023522695A JPWO2022244802A5 JP WO2022244802 A5 JPWO2022244802 A5 JP WO2022244802A5 JP 2023522695 A JP2023522695 A JP 2023522695A JP 2023522695 A JP2023522695 A JP 2023522695A JP WO2022244802 A5 JPWO2022244802 A5 JP WO2022244802A5
- Authority
- JP
- Japan
- Prior art keywords
- contact
- region
- trench
- plug
- plug portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 19
- 239000002019 doping agent Substances 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 239000000370 acceptor Substances 0.000 claims 3
- 229910021332 silicide Inorganic materials 0.000 claims 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000011229 interlayer Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
Images
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024059803A JP2024084795A (ja) | 2021-05-19 | 2024-04-02 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021084552 | 2021-05-19 | ||
| JP2021084552 | 2021-05-19 | ||
| PCT/JP2022/020666 WO2022244802A1 (ja) | 2021-05-19 | 2022-05-18 | 半導体装置および製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024059803A Division JP2024084795A (ja) | 2021-05-19 | 2024-04-02 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022244802A1 JPWO2022244802A1 (https=) | 2022-11-24 |
| JPWO2022244802A5 true JPWO2022244802A5 (https=) | 2023-07-19 |
| JP7468786B2 JP7468786B2 (ja) | 2024-04-16 |
Family
ID=84141634
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023522695A Active JP7468786B2 (ja) | 2021-05-19 | 2022-05-18 | 半導体装置および製造方法 |
| JP2024059803A Pending JP2024084795A (ja) | 2021-05-19 | 2024-04-02 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024059803A Pending JP2024084795A (ja) | 2021-05-19 | 2024-04-02 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12527016B2 (https=) |
| JP (2) | JP7468786B2 (https=) |
| CN (1) | CN116348995A (https=) |
| DE (1) | DE112022000141T5 (https=) |
| WO (1) | WO2022244802A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7779813B2 (ja) * | 2022-08-09 | 2025-12-03 | 株式会社東芝 | 半導体装置 |
| WO2024142638A1 (ja) * | 2022-12-27 | 2024-07-04 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| JP7834038B2 (ja) * | 2023-01-13 | 2026-03-23 | 三菱電機株式会社 | 半導体装置 |
| DE112023002505T5 (de) * | 2023-02-07 | 2025-04-30 | Fuji Electric Co., Ltd. | Halbleitervorrichtung |
| JP7845516B2 (ja) * | 2023-02-07 | 2026-04-14 | 富士電機株式会社 | 半導体装置 |
| JPWO2024236880A1 (https=) * | 2023-05-16 | 2024-11-21 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008160039A (ja) | 2006-12-26 | 2008-07-10 | Nec Electronics Corp | 半導体装置及びその製造方法 |
| JP4577425B2 (ja) | 2007-11-07 | 2010-11-10 | 株式会社デンソー | 半導体装置 |
| JP5317560B2 (ja) | 2008-07-16 | 2013-10-16 | 株式会社東芝 | 電力用半導体装置 |
| JP2010147380A (ja) | 2008-12-22 | 2010-07-01 | Denso Corp | 半導体装置の製造方法 |
| JP2010147381A (ja) | 2008-12-22 | 2010-07-01 | Denso Corp | 半導体装置の製造方法 |
| JP2012059873A (ja) | 2010-09-08 | 2012-03-22 | Renesas Electronics Corp | 半導体装置 |
| JP2012174989A (ja) | 2011-02-23 | 2012-09-10 | Toshiba Corp | 半導体装置の製造方法 |
| JP5562917B2 (ja) | 2011-09-16 | 2014-07-30 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP2014011418A (ja) * | 2012-07-03 | 2014-01-20 | Hitachi Ltd | 半導体装置およびその製造方法 |
| WO2014041808A1 (ja) | 2012-09-13 | 2014-03-20 | パナソニック株式会社 | 半導体装置 |
| JP5831526B2 (ja) | 2013-01-17 | 2015-12-09 | 株式会社デンソー | 半導体装置およびその製造方法 |
| JP6871316B2 (ja) * | 2014-04-15 | 2021-05-12 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
| JP6420175B2 (ja) * | 2014-05-22 | 2018-11-07 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP6302767B2 (ja) | 2014-06-27 | 2018-03-28 | 株式会社日立製作所 | 半導体装置及びそれを用いた電力変換装置 |
| JP5975543B2 (ja) | 2014-08-22 | 2016-08-23 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
| DE102014226161B4 (de) | 2014-12-17 | 2017-10-26 | Infineon Technologies Ag | Halbleitervorrichtung mit Überlaststrombelastbarkeit |
| DE102014119543B4 (de) | 2014-12-23 | 2018-10-11 | Infineon Technologies Ag | Halbleitervorrichtung mit transistorzellen und anreicherungszellen sowie leistungsmodul |
| JP2017022311A (ja) * | 2015-07-14 | 2017-01-26 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| CN108780814B (zh) * | 2016-09-14 | 2021-12-21 | 富士电机株式会社 | 半导体装置及其制造方法 |
| DE112017000727T5 (de) | 2016-09-14 | 2018-10-31 | Fuji Electric Co., Ltd. | RC-IGBT und Herstellungsverfahren dafür |
| US10636877B2 (en) * | 2016-10-17 | 2020-04-28 | Fuji Electric Co., Ltd. | Semiconductor device |
| JP7325931B2 (ja) | 2017-05-16 | 2023-08-15 | 富士電機株式会社 | 半導体装置 |
| JP6972691B2 (ja) * | 2017-06-19 | 2021-11-24 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| JP6963982B2 (ja) * | 2017-12-07 | 2021-11-10 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP6911941B2 (ja) | 2017-12-14 | 2021-07-28 | 富士電機株式会社 | 半導体装置 |
| CN111418072B (zh) * | 2018-06-22 | 2023-11-21 | 富士电机株式会社 | 半导体装置的制造方法及半导体装置 |
| EP3843132B1 (en) | 2019-04-16 | 2024-11-27 | Fuji Electric Co., Ltd. | Semiconductor device and production method |
| CN114503280B (zh) | 2020-04-16 | 2026-04-24 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
-
2022
- 2022-05-18 CN CN202280007098.6A patent/CN116348995A/zh active Pending
- 2022-05-18 JP JP2023522695A patent/JP7468786B2/ja active Active
- 2022-05-18 DE DE112022000141.0T patent/DE112022000141T5/de active Pending
- 2022-05-18 WO PCT/JP2022/020666 patent/WO2022244802A1/ja not_active Ceased
-
2023
- 2023-04-21 US US18/304,378 patent/US12527016B2/en active Active
-
2024
- 2024-04-02 JP JP2024059803A patent/JP2024084795A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPWO2022244802A5 (https=) | ||
| US10629685B2 (en) | RC-IGBT and manufacturing method thereof | |
| JP4833517B2 (ja) | 迅速な拡散によって形成されるドープカラムを含む電圧維持領域を有する高電圧電力ｍｏｓｆｅｔを製造する方法 | |
| US10749025B2 (en) | Semiconductor device and manufacturing method thereof | |
| US6586798B1 (en) | High voltage MOS-gated power device | |
| US6979862B2 (en) | Trench MOSFET superjunction structure and method to manufacture | |
| US7161208B2 (en) | Trench mosfet with field relief feature | |
| US20060011976A1 (en) | Termination for trench MIS device having implanted drain-drift region | |
| US20180358445A1 (en) | Semiconductor device and method of manufacturing semiconductor device | |
| US12527016B2 (en) | Semiconductor device and manufacturing method | |
| JP3943054B2 (ja) | Ｍｏｓゲート半導体デバイス | |
| JP2005510088A (ja) | 多結晶シリコンソースコンタクト構造を有するトレンチ金属酸化膜半導体電界効果トランジスタデバイス | |
| WO2004061975A1 (en) | Trench mis device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same | |
| JP2001127292A (ja) | 高密度トレンチゲートパワーｍｏｓｆｅｔ | |
| WO2000052760A1 (en) | Trench dmos transistor structure having a low resistance path to a drain contact located on an upper surface | |
| JP2006080177A (ja) | 半導体装置およびその製造方法 | |
| TWI446459B (zh) | 具有超級介面之功率電晶體元件之製作方法 | |
| CN1333468C (zh) | 具有深植入结的功率mosfet | |
| KR102816381B1 (ko) | 활성 영역과 반도체 층 사이의 배리어 층을 포함하는 반도체 소자 | |
| US12211932B2 (en) | Semiconductor device with improved breakdown voltage | |
| JP6750300B2 (ja) | 半導体装置および半導体装置の製造方法 | |
| US6969657B2 (en) | Superjunction device and method of manufacture therefor | |
| US11984499B2 (en) | Silicon carbide semiconductor device | |
| KR20210101154A (ko) | 트랜지스터 장치 및 트랜지스터 장치의 게이트를 제조하는 방법 | |
| JP5809877B2 (ja) | トレンチゲート型パワー半導体装置の製造方法 |