JP3943054B2 - Mosゲート半導体デバイス - Google Patents
Mosゲート半導体デバイス Download PDFInfo
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- JP3943054B2 JP3943054B2 JP2003188294A JP2003188294A JP3943054B2 JP 3943054 B2 JP3943054 B2 JP 3943054B2 JP 2003188294 A JP2003188294 A JP 2003188294A JP 2003188294 A JP2003188294 A JP 2003188294A JP 3943054 B2 JP3943054 B2 JP 3943054B2
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- 239000004065 semiconductor Substances 0.000 title claims description 66
- 230000005684 electric field Effects 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 9
- 230000004308 accommodation Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 description 20
- 239000002019 doping agent Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 12
- 238000004088 simulation Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 239000007943 implant Substances 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
(1)ゲート−ドレインのオーバーラップをトレンチ深さとは独立に制御でき、その結果、Qgdの制御がより良好になる。
(2)ゲート−ドレインのオーバーラップを従来のデバイスよりも小さく形成でき、その結果、Qgdが小さくなる。
(3)絶縁破壊電圧を低下させることなくMOSFETチャネル領域を短くでき、その結果、Qgが小さくなり、Rdsonを小さくすることができる。
10 トレンチ
12 チャネル領域
14 ゲート酸化物
16 ドレイン領域
18 トレンチ収容領域
20 半導体ダイ
22 基板
24 ソース領域
26 高導電性コンタクト領域
28 ソースコンタクト
30 ドレインコンタクト
32 ゲート電極
34 絶縁プラグ
36 高導電性領域
38 電界緩和領域
40 半導体デバイス
Claims (8)
- 基板上に形成された第1の導電型のチャネル収容領域と、
該チャネル収容領域内に形成された第2の導電型のチャネル領域と、
前記チャネル収容領域内に形成され、前記チャネル領域を通って延び、間隔を置いて配置された複数のトレンチと、
該トレンチの各々の底部に形成され、前記チャネル収容領域に隣接し、該チャネル収容領域よりも導電性が高い第1の導電型の高導電性領域と、
前記トレンチに隣接して配置され、前記チャネル領域上に形成された第1の導電型の複数の導電性領域と、
前記チャネル収容領域上に形成され、前記複数の導電性領域とオーミックコンタクトにある第1のコンタクトと、
前記チャネル領域の下方に形成され、前記複数のトレンチの深さよりも下方の深さまで延び、かつ前記複数のトレンチの角部から離して形成された第2の導電型の電界緩和領域と
を備え、前記電界緩和領域は、前記チャネル領域から間隔を置いて配置されていることを特徴とするMOSゲート半導体デバイス。 - 前記チャネル収容領域は、前記基板上に形成された半導体材料のエピタキシャル層であることを特徴とする請求項1に記載のMOSゲート半導体デバイス。
- 前記基板上に形成された第2のコンタクトを備えたことを特徴とする請求項2に記載のMOSゲート半導体デバイス。
- 前記MOSゲート半導体デバイスが、MOSFETであることを特徴とする請求項3に記載のMOSゲート半導体デバイス。
- 前記チャネル領域内に形成され、前記第1のコンタクトとオーミックコンタクトにある第2の導電型の高導電性コンタクト領域を備えたことを特徴とする請求項1に記載のMOSゲート半導体デバイス。
- 前記導電性領域が、ソース領域であることを特徴とする請求項1に記載のMOSゲート半導体デバイス。
- 前記トレンチには導電性材料がゲート絶縁材料を介して充填されていることを特徴とする請求項1に記載のMOSゲート半導体デバイス。
- 前記トレンチは、前記チャネル収容領域の前記チャネル領域の下方に達するまで延びていることを特徴とする請求項1に記載のMOSゲート半導体デバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US39291002P | 2002-06-28 | 2002-06-28 | |
US10/603,461 US6919599B2 (en) | 2002-06-28 | 2003-06-25 | Short channel trench MOSFET with reduced gate charge |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005005655A JP2005005655A (ja) | 2005-01-06 |
JP3943054B2 true JP3943054B2 (ja) | 2007-07-11 |
Family
ID=31498557
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003188294A Expired - Lifetime JP3943054B2 (ja) | 2002-06-28 | 2003-06-30 | Mosゲート半導体デバイス |
Country Status (3)
Country | Link |
---|---|
US (1) | US6919599B2 (ja) |
JP (1) | JP3943054B2 (ja) |
DE (1) | DE10329163A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10529848B2 (en) | 2017-12-13 | 2020-01-07 | Fuji Electric Co., Ltd. | Insulated-gate semiconductor device and method of manufacturing the same |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101567373B (zh) * | 2004-02-16 | 2011-04-13 | 富士电机系统株式会社 | 双方向元件及其制造方法 |
US20060022263A1 (en) * | 2004-07-30 | 2006-02-02 | International Rectifier Corporation | Selective substrate thinning for power mosgated devices |
JP2006332607A (ja) * | 2005-04-28 | 2006-12-07 | Nec Electronics Corp | 半導体装置 |
US20060273384A1 (en) * | 2005-06-06 | 2006-12-07 | M-Mos Sdn. Bhd. | Structure for avalanche improvement of ultra high density trench MOSFET |
JP2007012977A (ja) * | 2005-07-01 | 2007-01-18 | Toshiba Corp | 半導体装置 |
JP4939012B2 (ja) | 2005-08-26 | 2012-05-23 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7554151B2 (en) * | 2005-11-03 | 2009-06-30 | Atmel Corporation | Low voltage non-volatile memory cell with electrically transparent control gate |
US8883595B2 (en) * | 2006-02-23 | 2014-11-11 | Vishay-Siliconix | Process for forming a short channel trench MOSFET and device formed thereby |
US7554153B2 (en) * | 2006-03-07 | 2009-06-30 | International Rectifier Corporation | Power semiconductor device |
US7989882B2 (en) | 2007-12-07 | 2011-08-02 | Cree, Inc. | Transistor with A-face conductive channel and trench protecting well region |
JP5721308B2 (ja) * | 2008-03-26 | 2015-05-20 | ローム株式会社 | 半導体装置 |
EP4156302A1 (en) * | 2008-05-20 | 2023-03-29 | Rohm Co., Ltd. | Semiconductor device |
JP5564902B2 (ja) * | 2008-11-12 | 2014-08-06 | 富士電機株式会社 | 半導体装置およびその製造方法 |
TWI382476B (zh) * | 2009-02-20 | 2013-01-11 | Anpec Electronics Corp | 製作半導體元件之方法 |
US8101993B2 (en) * | 2009-03-18 | 2012-01-24 | Force Mos Technology Co., Ltd. | MSD integrated circuits with shallow trench |
WO2011039888A1 (ja) * | 2009-10-01 | 2011-04-07 | トヨタ自動車株式会社 | 半導体装置 |
CN102074561B (zh) * | 2009-11-24 | 2013-05-29 | 力士科技股份有限公司 | 一种沟槽金属氧化物半导体场效应管及其制造方法 |
US9653597B2 (en) | 2010-05-20 | 2017-05-16 | Infineon Technologies Americas Corp. | Method for fabricating a shallow and narrow trench FET and related structures |
JP5763514B2 (ja) | 2011-12-13 | 2015-08-12 | トヨタ自動車株式会社 | スイッチング素子の製造方法 |
WO2014102994A1 (ja) * | 2012-12-28 | 2014-07-03 | 株式会社日立製作所 | 炭化珪素半導体装置及びその製造方法 |
JP2015072999A (ja) * | 2013-10-02 | 2015-04-16 | 株式会社デンソー | 炭化珪素半導体装置 |
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US5424231A (en) * | 1994-08-09 | 1995-06-13 | United Microelectronics Corp. | Method for manufacturing a VDMOS transistor |
JP2000515684A (ja) * | 1996-07-19 | 2000-11-21 | シリコニックス・インコーポレイテッド | トレンチ底部注入領域を有する高密度トレンチdmosトランジスタ |
US6262453B1 (en) * | 1998-04-24 | 2001-07-17 | Magepower Semiconductor Corp. | Double gate-oxide for reducing gate-drain capacitance in trenched DMOS with high-dopant concentration buried-region under trenched gate |
CN1867068A (zh) * | 1998-07-14 | 2006-11-22 | 联合视频制品公司 | 交互式电视节目导视系统及其方法 |
US6624522B2 (en) * | 2000-04-04 | 2003-09-23 | International Rectifier Corporation | Chip scale surface mounted device and process of manufacture |
US20030005462A1 (en) * | 2001-05-22 | 2003-01-02 | Broadus Charles R. | Noise reduction for teleconferencing within an interactive television system |
US6657254B2 (en) * | 2001-11-21 | 2003-12-02 | General Semiconductor, Inc. | Trench MOSFET device with improved on-resistance |
US20040117843A1 (en) * | 2002-12-11 | 2004-06-17 | Jeyhan Karaoguz | Media exchange network supporting local and remote personalized media overlay |
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-
2003
- 2003-06-25 US US10/603,461 patent/US6919599B2/en not_active Expired - Lifetime
- 2003-06-27 DE DE10329163A patent/DE10329163A1/de not_active Withdrawn
- 2003-06-30 JP JP2003188294A patent/JP3943054B2/ja not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10529848B2 (en) | 2017-12-13 | 2020-01-07 | Fuji Electric Co., Ltd. | Insulated-gate semiconductor device and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
US6919599B2 (en) | 2005-07-19 |
DE10329163A1 (de) | 2004-03-04 |
JP2005005655A (ja) | 2005-01-06 |
US20040065920A1 (en) | 2004-04-08 |
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