JP5001895B2 - デルタ層を有する低オン抵抗のトレンチ型mosfet - Google Patents
デルタ層を有する低オン抵抗のトレンチ型mosfet Download PDFInfo
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- JP5001895B2 JP5001895B2 JP2008101159A JP2008101159A JP5001895B2 JP 5001895 B2 JP5001895 B2 JP 5001895B2 JP 2008101159 A JP2008101159 A JP 2008101159A JP 2008101159 A JP2008101159 A JP 2008101159A JP 5001895 B2 JP5001895 B2 JP 5001895B2
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- 239000000758 substrate Substances 0.000 claims description 25
- 239000002019 doping agent Substances 0.000 claims description 24
- 210000000746 body region Anatomy 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000005684 electric field Effects 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 2
- -1 arsenic ions Chemical class 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Description
14 P−ボディ領域
16 N−エピタキシャル層
18 ゲート
20 N+基板
22 空乏層
100 MOSFET
102 ゲート
104 ゲート
106 ゲート酸化層
108 ゲート酸化層
110 N−エピタキシャル層
111 ドリフト領域
112 N+ソース領域
113A 厚い酸化層
113B 薄い酸化層
114 P+コンタクト領域
115 厚い酸化層
116 P−ボディ領域
117 酸化層
118 ソースコンタクト金属層
119 薄い酸化層
120 N+基板
121 ゲート金属領域
122 (トレンチの)コーナー部分
200 MOSFET
300 MOSFET
302 (P+領域の)下端部
400 MOSFET
402 Nデルタ層
800 MOSFET
802 Nデルタ層
1000 MOSFET
1002 Nデルタ層
1300 P基板
1302 N+埋込層
1304 N+シンカー
1306 金属コンタクト部分
1308 MOSFET
1310 MOSFET
1316 デルタ層
Claims (2)
- トレンチが形成された半導体基板と、
前記トレンチ内に配置され、絶縁層によって前記基板から隔てられたゲートと、
前記基板の上側表面上に前記トレンチに隣接して配置された第1導電型のソース領域と、
前記トレンチ及び前記ソース領域に隣接するように配置された第2導電型のボディ領域と、
前記トレンチと前記ボディ領域に隣接して配置され、前記トレンチの底部より下の位置まで延在する前記第1導電型のドレイン領域とを有するバーチカルトレンチ型MOSFETであって、
前記ドレイン領域が、
前記基板の面のうち前記トレンチの形成された面の裏側の面全体にわたる基板の部分であって、前記トレンチの前記底部から離隔した、濃いドープをなされた領域と、
前記濃いドープをなされた領域の上層をなす、前記濃いドープをなされた領域のドーパント濃度よりも低いドーパント濃度を有するドリフト領域と、
前記ドリフト領域のドーパント濃度よりも高いドーパント濃度を有する、前記ボディ領域の下層をなす層であるデルタ層とを有することを特徴とし、
前記デルタ層が、前記ドリフト領域の上側か、または前記ドリフト領域の内部に位置することを特徴とし、
前記デルタ層の上側境界部分が、前記トレンチの前記底部よりも上の位置にあることを特徴とし、
前記デルタ層が、前記トレンチの側壁から横方向に隔てられ、かつ一連の平行なトレンチの間の中心部分に設けられることを特徴とし、
前記ボディ領域が、その一部として、濃いドープをなされたボディ部分を有し、
前記濃いドープをなされたボディ部分は、前記一連の平行なトレンチの間の中心部分において前記デルタ層を貫通して下方向に延在する深い中央ボディ部分を含み、
前記深い中央ボディ部分の最も深い部分が、前記デルタ層の下側境界部分より下の位置にあることを特徴とするバーチカルトレンチ型MOSFET。 - 前記デルタ層が、前記深い中央ボディ部分に接触していることを特徴とする請求項1に記載のバーチカルトレンチ型MOSFET。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US36702794A | 1994-12-30 | 1994-12-30 | |
US08/367,027 | 1994-12-30 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7351967A Division JPH08250732A (ja) | 1994-12-30 | 1995-12-27 | デルタ層を有する低オン抵抗のトレンチ型mosfet及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008205497A JP2008205497A (ja) | 2008-09-04 |
JP5001895B2 true JP5001895B2 (ja) | 2012-08-15 |
Family
ID=23445630
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7351967A Pending JPH08250732A (ja) | 1994-12-30 | 1995-12-27 | デルタ層を有する低オン抵抗のトレンチ型mosfet及びその製造方法 |
JP2008101159A Expired - Lifetime JP5001895B2 (ja) | 1994-12-30 | 2008-04-09 | デルタ層を有する低オン抵抗のトレンチ型mosfet |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7351967A Pending JPH08250732A (ja) | 1994-12-30 | 1995-12-27 | デルタ層を有する低オン抵抗のトレンチ型mosfet及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5688725A (ja) |
EP (1) | EP0720235A3 (ja) |
JP (2) | JPH08250732A (ja) |
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1995
- 1995-06-06 US US08/482,357 patent/US5688725A/en not_active Expired - Lifetime
- 1995-12-27 JP JP7351967A patent/JPH08250732A/ja active Pending
- 1995-12-29 EP EP95309535A patent/EP0720235A3/en not_active Ceased
-
2008
- 2008-04-09 JP JP2008101159A patent/JP5001895B2/ja not_active Expired - Lifetime
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JPH08250732A (ja) | 1996-09-27 |
EP0720235A3 (en) | 1997-01-08 |
JP2008205497A (ja) | 2008-09-04 |
EP0720235A2 (en) | 1996-07-03 |
US5688725A (en) | 1997-11-18 |
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