JP6911941B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6911941B2 JP6911941B2 JP2019559198A JP2019559198A JP6911941B2 JP 6911941 B2 JP6911941 B2 JP 6911941B2 JP 2019559198 A JP2019559198 A JP 2019559198A JP 2019559198 A JP2019559198 A JP 2019559198A JP 6911941 B2 JP6911941 B2 JP 6911941B2
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- insulating film
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- 239000004065 semiconductor Substances 0.000 title claims description 276
- 239000011229 interlayer Substances 0.000 claims description 236
- 239000000758 substrate Substances 0.000 claims description 191
- 239000004020 conductor Substances 0.000 claims description 12
- 238000013459 approach Methods 0.000 claims description 9
- 230000007423 decrease Effects 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 description 47
- 239000002184 metal Substances 0.000 description 47
- 239000010410 layer Substances 0.000 description 36
- 239000010936 titanium Substances 0.000 description 22
- 238000003860 storage Methods 0.000 description 18
- 238000010586 diagram Methods 0.000 description 15
- 230000004888 barrier function Effects 0.000 description 14
- 239000011810 insulating material Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 230000002093 peripheral effect Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 8
- 238000009825 accumulation Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000005380 borophosphosilicate glass Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
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- 238000005468 ion implantation Methods 0.000 description 1
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- 238000005121 nitriding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Description
特許文献1 特表2005−524975号公報
Claims (20)
- 半導体基板と、
前記半導体基板の上面から前記半導体基板の内部まで設けられ、前記半導体基板の前記上面において予め定められた延伸方向に延伸して設けられたゲートトレンチ部と、
前記延伸方向と直交する配列方向に、前記ゲートトレンチ部と接して設けられたメサ部と、
前記半導体基板の上方に設けられた層間絶縁膜と、
を備え、
前記ゲートトレンチ部の前記配列方向における少なくとも一部の上方には、前記層間絶縁膜が設けられ、
前記層間絶縁膜には、前記メサ部を露出させるコンタクトホールが設けられ、
前記コンタクトホールの前記配列方向における幅は、前記メサ部の前記配列方向における幅より大きい
半導体装置。 - 前記ゲートトレンチ部は、
前記ゲートトレンチ部の内壁に設けられたゲート絶縁膜と、
前記ゲートトレンチ部の内部において前記ゲート絶縁膜に囲まれているゲート導電部と
を有し、
前記ゲート導電部の上端は前記半導体基板の前記上面よりも下方に配置されており、
前記ゲート導電部の前記配列方向における少なくとも一部の上方に、前記層間絶縁膜が設けられている、
請求項1に記載の半導体装置。 - 前記層間絶縁膜は、前記配列方向における前記ゲートトレンチ部の一端から他端まで設けられている、請求項2に記載の半導体装置。
- 半導体基板と、
前記半導体基板の上面から前記半導体基板の内部まで設けられ、前記半導体基板の前記上面において予め定められた延伸方向に延伸して設けられたゲートトレンチ部と、
前記延伸方向と直交する配列方向に、前記ゲートトレンチ部と接して設けられたメサ部と、
前記半導体基板の上方に設けられた層間絶縁膜と、
を備え、
前記ゲートトレンチ部の前記配列方向における少なくとも一部の上方には、前記層間絶縁膜が設けられ、
前記層間絶縁膜には、前記メサ部を露出させるコンタクトホールが設けられ、
前記コンタクトホールの前記配列方向における幅は、前記メサ部の前記配列方向における幅以上であり、
前記ゲートトレンチ部は、
前記ゲートトレンチ部の内壁に設けられたゲート絶縁膜と、
前記ゲートトレンチ部の内部において前記ゲート絶縁膜に囲まれているゲート導電部と
を有し、
前記ゲート導電部の上端は前記半導体基板の前記上面よりも下方に配置されており、
前記ゲート導電部の前記配列方向における少なくとも一部の上方に、前記層間絶縁膜が設けられていて、
前記層間絶縁膜のうち、前記半導体基板の前記上面よりも下方に設けられた下部分の厚さが、前記半導体基板の前記上面よりも上方に設けられた上部分の厚さよりも大きい、半導体装置。 - 半導体基板と、
前記半導体基板の上面から前記半導体基板の内部まで設けられ、前記半導体基板の前記上面において予め定められた延伸方向に延伸して設けられたゲートトレンチ部と、
前記延伸方向と直交する配列方向に、前記ゲートトレンチ部と接して設けられたメサ部と、
前記半導体基板の上方に設けられた層間絶縁膜と、
を備え、
前記ゲートトレンチ部の前記配列方向における少なくとも一部の上方には、前記層間絶縁膜が設けられ、
前記層間絶縁膜には、前記メサ部を露出させるコンタクトホールが設けられ、
前記コンタクトホールの前記配列方向における幅は、前記メサ部の前記配列方向における幅以上であり、
前記ゲートトレンチ部は、
前記ゲートトレンチ部の内壁に設けられたゲート絶縁膜と、
前記ゲートトレンチ部の内部において前記ゲート絶縁膜に囲まれているゲート導電部と
を有し、
前記ゲート導電部の上端は前記半導体基板の前記上面よりも下方に配置されており、
前記ゲート導電部の前記配列方向における少なくとも一部の上方に、前記層間絶縁膜が設けられていて、
前記半導体基板の前記上面よりも上方において、前記層間絶縁膜の前記配列方向における端に配置された側面と、前記半導体基板の前記上面を前記層間絶縁膜の内部に延伸させた面とのなす角度が、20度以上60度以下である、半導体装置。 - 半導体基板と、
前記半導体基板の上面から前記半導体基板の内部まで設けられ、前記半導体基板の前記上面において予め定められた延伸方向に延伸して設けられたゲートトレンチ部と、
前記延伸方向と直交する配列方向に、前記ゲートトレンチ部と接して設けられたメサ部と、
前記半導体基板の上方に設けられた層間絶縁膜と、
を備え、
前記ゲートトレンチ部の前記配列方向における少なくとも一部の上方には、前記層間絶縁膜が設けられ、
前記層間絶縁膜には、前記メサ部を露出させるコンタクトホールが設けられ、
前記コンタクトホールの前記配列方向における幅は、前記メサ部の前記配列方向における幅以上であり、
前記ゲートトレンチ部は、
前記ゲートトレンチ部の内壁に設けられたゲート絶縁膜と、
前記ゲートトレンチ部の内部において前記ゲート絶縁膜に囲まれているゲート導電部と
を有し、
前記ゲート導電部の上端は前記半導体基板の前記上面よりも下方に配置されており、
前記ゲート導電部の前記配列方向における少なくとも一部の上方に、前記層間絶縁膜が設けられていて、
前記半導体基板の前記上面よりも下方における前記層間絶縁膜の厚さが、前記ゲート絶縁膜の厚さの2倍以上4倍以下である、半導体装置。 - 半導体基板と、
前記半導体基板の上面から前記半導体基板の内部まで設けられ、前記半導体基板の前記上面において予め定められた延伸方向に延伸して設けられたゲートトレンチ部と、
前記延伸方向と直交する配列方向に、前記ゲートトレンチ部と接して設けられたメサ部と、
前記半導体基板の上方に設けられた層間絶縁膜と、
を備え、
前記ゲートトレンチ部の前記配列方向における少なくとも一部の上方には、前記層間絶縁膜が設けられ、
前記層間絶縁膜には、前記メサ部を露出させるコンタクトホールが設けられ、
前記コンタクトホールの前記配列方向における幅は、前記メサ部の前記配列方向における幅以上であり、
前記ゲートトレンチ部は、
前記ゲートトレンチ部の内壁に設けられたゲート絶縁膜と、
前記ゲートトレンチ部の内部において前記ゲート絶縁膜に囲まれているゲート導電部と
を有し、
前記ゲート導電部の上端は前記半導体基板の前記上面よりも下方に配置されており、
前記ゲート導電部の前記配列方向における少なくとも一部の上方に、前記層間絶縁膜が設けられていて、
前記層間絶縁膜は、前記半導体基板の前記上面よりも上方において、上方に凸の凸部を有する、半導体装置。 - 前記凸部の頂点が、前記半導体基板の前記上面に直交する方向において、前記ゲート絶縁膜の上方に配置される、請求項7に記載の半導体装置。
- 前記凸部の頂点が、前記半導体基板の前記上面に直交する方向において、前記ゲート導電部の上方に配置される、請求項7に記載の半導体装置。
- 半導体基板と、
前記半導体基板の上面から前記半導体基板の内部まで設けられ、前記半導体基板の前記上面において予め定められた延伸方向に延伸して設けられたゲートトレンチ部と、
前記延伸方向と直交する配列方向に、前記ゲートトレンチ部と接して設けられたメサ部と、
前記半導体基板の上方に設けられた層間絶縁膜と、
を備え、
前記ゲートトレンチ部の前記配列方向における少なくとも一部の上方には、前記層間絶縁膜が設けられ、
前記層間絶縁膜には、前記メサ部を露出させるコンタクトホールが設けられ、
前記コンタクトホールの前記配列方向における幅は、前記メサ部の前記配列方向における幅以上であり、
前記ゲートトレンチ部は、
前記ゲートトレンチ部の内壁に設けられたゲート絶縁膜と、
前記ゲートトレンチ部の内部において前記ゲート絶縁膜に囲まれているゲート導電部と
を有し、
前記ゲート導電部の上端は前記半導体基板の前記上面よりも下方に配置されており、
前記ゲート導電部の前記配列方向における少なくとも一部の上方に、前記層間絶縁膜が設けられていて、
前記層間絶縁膜は、前記半導体基板の前記上面よりも上方に設けられた上部分の上面において、前記層間絶縁膜の前記配列方向の中央を含まない領域に窪みを有する、半導体装置。 - 前記窪みが、前記半導体基板の前記上面に直交する方向において、前記ゲート導電部の上方に配置される、請求項10に記載の半導体装置。
- 半導体基板と、
前記半導体基板の上面から前記半導体基板の内部まで設けられ、前記半導体基板の前記上面において予め定められた延伸方向に延伸して設けられたゲートトレンチ部と、
前記延伸方向と直交する配列方向に、前記ゲートトレンチ部と接して設けられたメサ部と、
前記半導体基板の上方に設けられた層間絶縁膜と、
を備え、
前記ゲートトレンチ部の前記配列方向における少なくとも一部の上方には、前記層間絶縁膜が設けられ、
前記層間絶縁膜には、前記メサ部を露出させるコンタクトホールが設けられ、
前記コンタクトホールの前記配列方向における幅は、前記メサ部の前記配列方向における幅以上であり、
前記ゲートトレンチ部は、
前記ゲートトレンチ部の内壁に設けられたゲート絶縁膜と、
前記ゲートトレンチ部の内部において前記ゲート絶縁膜に囲まれているゲート導電部と
を有し、
前記ゲート導電部の上端は前記半導体基板の前記上面よりも下方に配置されており、
前記ゲート導電部の前記配列方向における少なくとも一部の上方に、前記層間絶縁膜が設けられていて、
前記コンタクトホールは、前記メサ部の上方および前記ゲート導電部の上方に、前記配列方向に連続して設けられる、半導体装置。 - 半導体基板と、
前記半導体基板の上面から前記半導体基板の内部まで設けられ、前記半導体基板の前記上面において予め定められた延伸方向に延伸して設けられたゲートトレンチ部と、
前記延伸方向と直交する配列方向に、前記ゲートトレンチ部と接して設けられたメサ部と、
前記半導体基板の上方に設けられた層間絶縁膜と、 前記半導体基板の前記上面から前記半導体基板の内部まで設けられ、前記半導体基板の前記上面において予め定められた延伸方向に延伸して設けられ、前記延伸方向と直交する配列方向において前記ゲートトレンチ部と向かい合って配置されたダミートレンチ部と、
導電材料で形成されたコンタクト延伸部と
を備え、
前記ゲートトレンチ部の前記配列方向における少なくとも一部の上方には、前記層間絶縁膜が設けられ、
前記層間絶縁膜には、前記メサ部を露出させるコンタクトホールが設けられ、
前記コンタクトホールの前記配列方向における幅は、前記メサ部の前記配列方向における幅以上であり、
前記ダミートレンチ部は、
前記ダミートレンチ部の内壁に設けられたダミー絶縁膜と、
前記ダミートレンチ部の内部において前記ダミー絶縁膜に囲まれているダミー導電部と
を有し、
前記ダミートレンチ部の前記内壁のうち前記ゲートトレンチ部と向かい合う前記内壁と、前記ダミー導電部との間に設けられた前記ダミー絶縁膜の上端は、前記ダミー導電部の上端よりも下方に配置されており、
前記コンタクト延伸部は、前記ダミー絶縁膜の前記上端に接している半導体装置。 - 前記層間絶縁膜は、前記ゲートトレンチ部の内部において、前記半導体基板の前記上面よりも下方に設けられている
請求項1から13のいずれか一項に記載の半導体装置。 - 前記層間絶縁膜は、前記半導体基板の前記上面に近づくほど、前記配列方向における幅が広がる
請求項14に記載の半導体装置。 - 前記メサ部は、前記半導体基板の前記上面に近づくほど、前記配列方向における幅が減少する
請求項15に記載の半導体装置。 - 前記メサ部の上面には、導電材料のトレンチコンタクトが設けられている
請求項16に記載の半導体装置。 - 前記ゲートトレンチ部は、
前記ゲートトレンチ部の内壁に設けられたゲート絶縁膜と、
前記ゲートトレンチ部の内部において前記ゲート絶縁膜に囲まれているゲート導電部と
を有し、
前記ゲート絶縁膜の上方に前記層間絶縁膜が設けられている
請求項1に記載の半導体装置。 - 前記メサ部の上面には、前記ゲートトレンチ部と接するエミッタ領域が設けられており、
前記層間絶縁膜は、前記エミッタ領域の上方には配置されていない
請求項1または18に記載の半導体装置。 - 半導体基板と、
前記半導体基板の上面から前記半導体基板の内部まで設けられ、前記半導体基板の前記上面において予め定められた延伸方向に延伸して設けられたゲートトレンチ部と、
前記延伸方向と直交する配列方向に、前記ゲートトレンチ部と接して設けられたメサ部と、
前記半導体基板の上方に設けられた層間絶縁膜と、
を備え、
前記ゲートトレンチ部の前記配列方向における少なくとも一部の上方には、前記層間絶縁膜が設けられ、
前記層間絶縁膜には、前記メサ部を露出させるコンタクトホールが設けられ、
前記コンタクトホールの前記配列方向における幅は、前記メサ部の前記配列方向における幅以上であり、
前記層間絶縁膜は、前記ゲートトレンチ部の内部において、前記半導体基板の前記上面よりも下方に設けられていて、
前記層間絶縁膜は、前記半導体基板の前記上面に近づくほど、前記配列方向における幅が広がり、
前記メサ部は、前記半導体基板の前記上面に近づくほど、前記配列方向における幅が減少し、
前記メサ部の上面には、導電材料のトレンチコンタクトが設けられていて、
前記メサ部の上面には、前記ゲートトレンチ部と接するエミッタ領域が設けられており、
前記トレンチコンタクトの下方に前記エミッタ領域が設けられている半導体装置。
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