JPWO2018079181A1 - 圧電振動デバイスの周波数調整方法 - Google Patents
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- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/026—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the tuning fork type
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- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0428—Modification of the thickness of an element of an electrode
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0442—Modification of the thickness of an element of a non-piezoelectric layer
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
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- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
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- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0478—Resonance frequency in a process for mass production
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0492—Resonance frequency during the manufacture of a tuning-fork
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Abstract
Description
粗調整工程は、調整用金属膜Wの一部を薄肉化または除去することによって周波数の粗調整を行う工程である。本実施形態における粗調整工程は、図4に示すように、幅広部33の先端部よりも外側(図4において幅広部33の上方)からレーザービームLの照射を開始し始めている。具体的には、幅広部33の先端部から振動腕31,32の伸長方向に離間した外方を起点として、レーザービームLを振動腕の腕幅方向(図4における右向き矢印)に走査させながら、振動腕31,32の根元側(図4における下向き矢印)に向かって所定ピッチで移動させている。このようにレーザービームLの照射位置を移動させていくことによって、調整用金属膜Wを薄肉化または除去する。図4では、粗調整が行われた領域を「RA」で表示している。なお、「除去」は、調整用金属膜Wの厚み方向において、電極または水晶素地が露出するように調整用金属膜Wの質量を削減することを意味する。また、「薄肉化」は、調整用金属膜Wの厚み方向において、電極または水晶素地が露出せずに調整用金属膜Wの一部が残存するように調整用金属膜Wの質量を削減することを意味する。
微調整工程は、粗調整工程で発生した生成物W1,W2の少なくとも一部を薄肉化または除去することによって周波数の微調整を行う工程である。本実施形態における微調整工程では、図5に示すように、生成物W1の振動腕31,32の先端側の端縁から振動腕31,32の伸長方向に離間した位置からレーザービームLを振動腕31,32の腕幅方向(図5における右向き矢印)に走査させながら、振動腕31,32の根元側(図5における下向き矢印)に向かって所定ピッチで移動させている。このようにレーザービームLの照射位置を移動させていくことによって、生成物W1の少なくとも一部を薄肉化または除去していく。なお、「除去」は、生成物W1,W2の厚み方向において、電極または水晶素地が露出するように生成物W1,W2の質量を削減することを意味する。「薄肉化」は、生成物W1,W2の厚み方向において、電極または水晶素地が露出せずに生成物W1,W2の一部が残存するように生成物W1,W2の質量を削減することを意味する。
2 基部
31,32 振動腕
W 調整用金属膜
W1,W2 調整用金属膜からの生成物
Claims (6)
- 音叉型圧電振動片の振動腕に形成された調整用金属膜の質量を減じることによって周波数調整を行う圧電振動デバイスの周波数調整方法であって、
前記調整用金属膜の一部を薄肉化または除去することによって周波数の粗調整を行う粗調整工程と、
前記粗調整工程で薄肉化または除去された調整用金属膜からの生成物の少なくとも一部を薄肉化または除去することによって周波数の微調整を行う微調整工程と、を有する圧電振動デバイスの周波数調整方法。 - 請求項1に記載の圧電振動デバイスの周波数調整方法において、
前記微調整工程では、前記調整用金属膜からの生成物の振動腕の先端側の端縁から振動腕の根元側に向かって、前記生成物が薄肉化または除去されることを特徴とする圧電振動デバイスの周波数調整方法。 - 請求項1に記載の圧電振動デバイスの周波数調整方法において、
前記微調整工程では、前記調整用金属膜からの生成物の振動腕の先端側の端縁に対して振動腕の根元方向に離間した位置から振動腕の根元側に向かって、前記生成物が薄肉化または除去されることを特徴とする圧電振動デバイスの周波数調整方法。 - 請求項1乃至3のいずれか1項に記載の圧電振動デバイスの周波数調整方法において、
前記微調整工程での微調整は、調整用金属膜の前記粗調整工程で薄肉化または除去されずに残存した領域に対しては行われないことを特徴とする圧電振動デバイスの周波数調整方法。 - 請求項1乃至4のいずれか1項に記載の圧電振動デバイスの周波数調整方法において、
前記音叉型圧電振動片が収容される圧電振動デバイスが平面視略矩形であり、その平面視の外形寸法が、長辺が1.6mm以下で、短辺が1.0mm以下であり、
前記粗調整工程前において前記調整用金属膜の厚みが0.003mm以上であることを特徴とする圧電振動デバイスの周波数調整方法。 - 請求項1乃至4のいずれか1項に記載の圧電振動デバイスの周波数調整方法において、
前記音叉型圧電振動片が収容される圧電振動デバイスが平面視略矩形であり、その平面視の外形寸法が、長辺が1.2mm以下で、短辺が1.0mm以下であり、
前記粗調整工程前において前記調整用金属膜の厚みが0.010mm以上であることを特徴とする圧電振動デバイスの周波数調整方法。
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US20190253032A1 (en) | 2019-08-15 |
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