JPWO2005121266A1 - 接着剤組成物、回路接続材料、回路部材の接続構造及び半導体装置 - Google Patents
接着剤組成物、回路接続材料、回路部材の接続構造及び半導体装置 Download PDFInfo
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- JPWO2005121266A1 JPWO2005121266A1 JP2006514545A JP2006514545A JPWO2005121266A1 JP WO2005121266 A1 JPWO2005121266 A1 JP WO2005121266A1 JP 2006514545 A JP2006514545 A JP 2006514545A JP 2006514545 A JP2006514545 A JP 2006514545A JP WO2005121266 A1 JPWO2005121266 A1 JP WO2005121266A1
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Images
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Abstract
Description
本発明の接着剤組成物は、熱可塑性樹脂と、ラジカル重合性化合物と、ラジカル重合開始剤と、ラジカル重合調節剤とを含有するものである。このような接着剤組成物によれば、低温で十分迅速に硬化処理を行うことができ、且つ硬化処理を行う際のプロセスマージンが広く、十分に安定した接着強度が得られる。
本発明において用いるラジカル重合調節剤としては、加熱硬化時に過酸化物等のラジカル重合開始剤の分解によって発生する開始ラジカルや、開始ラジカルがラジカル重合性化合物に攻撃して生成した成長ラジカルと速やかに反応し、かつ60℃以上の加熱によって、再びラジカルを生成し、前記ラジカル重合性化合物の重合を促進する化合物であれば、特に制限なく公知のものを使用することができる。
本発明に係る熱可塑性樹脂は、接着する対象物(以下、単に「被着体」という。)同士の接着を強固なものにするために用いられる。
本発明に係るラジカル重合性化合物とは、何らかのエネルギーが付与されることによってラジカルが発生し、そのラジカルが連鎖反応によって重合してポリマーを形成する性能を有する化合物をいう。このラジカル重合反応は一般にカチオン重合やアニオン重合よりも迅速に反応が進行する。よって、ラジカル重合性化合物を用いる本発明においては、比較的短時間での重合が可能となる。
本発明の接着剤組成物はラジカル重合開始剤を含む。ラジカル重合性化合物は、一旦ラジカル重合反応を開始すると、連鎖反応が進行し、強固な硬化が可能となるが、最初にラジカルを発生させることが比較的困難であるため、ラジカルを比較的容易に生成可能なラジカル重合開始剤を含有させる。
次に、本発明の回路部材の接続構造の好適な実施形態について説明する。図1は、本発明の回路部材の接続構造の一実施形態を示す概略断面図である。図1に示すように、本実施形態の回路部材の接続構造1は、相互に対向する第1の回路部材20及び第2の回路部材30を備えており、第1の回路部材20と第2の回路部材30との間には、これらを電気的に接続する回路接続部材10が設けられている。 第1の回路部材20は、第1の回路基板21と、回路基板21の主面21a上に形成される第1の回路電極22とを備えている。なお、回路基板21の主面21a上には、場合により絶縁層(図示せず)が形成されていてもよい。
次に、本発明の半導体装置の実施形態について説明する。図2は、本発明の半導体装置の一実施形態を示す概略断面図である。図2に示すように、本実施形態の半導体装置2は、半導体素子50と、半導体の支持部材となる基板60とを備えており、半導体素子50及び基板60の間には、これらを電気的に接続する半導体素子接続部材40が設けられている。また、半導体素子接続部材40は基板60の主面60a上に積層され、半導体素子50は更にその半導体素子接続部材40上に積層されている。
ポリスチレン粒子の表面に、厚さ0.2μmになるようにニッケル層を設け、更にこのニッケル層の外側に、厚さ0.02μmになるように金層を設け、平均粒径4μm、比重2.5の導電性粒子を作製した。
フェノキシ樹脂(熱可塑性樹脂、平均分子量45000、ユニオンカーバイト社製、商品名:PKHC)50質量部を、メチルエチルケトン75質量部に溶解して、固形分40質量%の溶液とした。
ラジカル重合調節剤としてビス(1,2,2,6,6−ペンタメチル−4−ピペリジル)セバケートの代わりにビス(2,2,6,6−テトラメチル−4−ピペリジル)セバケートを1質量部配合した以外は実施例1と同様にして、フィルム状回路接続材Bを得た。
ラジカル重合開始剤としてt−ヘキシルパーオキシ−2−エチルヘキサノエートの代わりにジイソプロピルパーオキシカーボネート(ラジカル重合開始剤、1分間半減期温度88.3℃、日本油脂社製、商品名:パーロイルIPP)を3質量部配合した以外は実施例1と同様にして、フィルム状回路接続材Cを得た。
ラジカル重合調節剤であるビス(1,2,2,6,6−ペンタメチル−4−ピペリジル)セバケートを用いない以外は実施例1と同様にして、フィルム状回路接続材Dを得た。
フェノキシ樹脂(熱可塑性樹脂、平均分子量45000、ユニオンカーバイト社製、商品名:PKHC)40質量部を、メチルエチルケトン60質量部に溶解して、固形分40質量%の溶液とした。
ラジカル重合調節剤として2,2,6,6−テトラメチルピペリジン−1−オキシルの代わりに4−ヒドロキシ−2,2,6,6−テトラメチルピペリジン−1−オキシルを0.5質量部配合したこと以外は実施例3と同様にして、フィルム状回路接続材Fを得た。
ラジカル重合調節剤である2,2,6,6−テトラメチルピペリジン−1−オキシルを用いないこと以外は実施例3と同様にして、フィルム状回路接続材Gを得た。
〔接着強度の測定〕
上記製法によって得られたフィルム状回路接続材A〜Dの接着強度をJIS−Z0237に準じて90度剥離法で測定し、加熱温度150℃、160℃、170℃での接着強度のばらつきを評価した。ここで、接着強度の測定装置はテンシロンUTM−4(剥離速度50mm/min、25℃、東洋ボールドウィン社製)を使用した。得られた結果を表1に示す。
上記製法によって得られたフィルム状回路接続材A〜Dを用いて、ライン幅25μm、ピッチ50μm、厚さ18μmの銅回路配線を500本有するフレキシブル回路板(FPC)と、0.2μmの酸化インジウム錫(ITO)の薄層を形成したガラス(厚さ1.1mm、表面抵抗20Ω/□)とを、熱圧着装置(加熱方式:コンスタントヒート型、東レエンジニアリング社製)により幅2mmにわたり電気的に接続した。この際の加熱加圧の条件は、加熱温度を150℃、160℃、170℃、加圧圧力を3MPa、加熱加圧時間を15秒間とした。この電気的に接続した回路間の接続抵抗を、接着直後、及び85℃、85%RHの高温高湿槽中に120時間保持した後にマルチメータを用いて測定した。抵抗値は隣接する回路間の抵抗150点の平均(x+3σ)で示した。得られた結果を表1に示す。
実施例1及び4で得られたフィルム状回路接続材A及びEを、真空包装材に収容し、40℃で3日間放置した後、FPC及びITOを上述の加熱圧着装置により160℃、3MPa、10秒間の条件下で加熱圧着を行いフィルムを得た。得られたフィルムについて評価方法1及び2に準じて接着強度と接続抵抗を測定した。その結果を表3に示す。
Claims (17)
- 熱可塑性樹脂と、ラジカル重合性化合物と、ラジカル重合開始剤と、ラジカル重合調節剤と、を含有する、接着剤組成物。
- 前記R1が、水素原子、水酸基、炭素数1〜10のアルキル基、アリール基、炭素数2〜20のアルコキシ基、又は下記一般式(2)で表される1価の有機基、である、請求項3記載の接着剤組成物。
- 前記ラジカル重合調節剤が、分子内に1つ以上のアミノキシル構造を有する、請求項1〜3のいずれか一項に記載の接着剤組成物。
- 前記ラジカル重合性化合物が分子内に2つ以上の(メタ)アクリロイル基を有する、請求項1〜5のいずれか一項に記載の接着剤組成物。
- 前記ラジカル重合開始剤は、1分間半減期温度が90〜175℃であるパーオキシエステル誘導体である、請求項1〜6のいずれか一項に記載の接着剤組成物。
- 前記ラジカル重合開始剤は、分子量が180〜1000であるパーオキシエステル誘導体である、請求項1〜7のいずれか一項に記載の接着剤組成物。
- 前記熱可塑性樹脂100質量部に対して、前記ラジカル重合性化合物を50〜250質量部含有し、前記ラジカル重合開始剤を0.05〜30質量部含有し、且つ前記ラジカル重合調節剤を0.001〜30質量部含有する、請求項1〜8のいずれか一項に記載の接着剤組成物。
- 更に導電性粒子を含有することを特徴とする請求項1〜9のいずれか一項に記載の接着剤組成物。
- 前記熱可塑性樹脂100質量部に対して、前記導電性粒子を0.5〜30質量部含有する、請求項10記載の接着剤組成物。
- 対向する回路電極同士を電気的に接続するための回路接続材料であって、
前記回路接続材料が請求項1〜11のいずれか一項に記載の接着剤組成物を含有する、回路接続材料。 - 請求項1〜11のいずれか一項に記載の接着剤組成物をフィルム状に形成してなる、フィルム状接着剤。
- 請求項12記載の回路接続材料をフィルム状に形成してなる、フィルム状回路接続材。
- 加圧時間10秒、加圧圧力3MPa、及び加熱温度140〜200℃の条件下で対向する回路部材が加熱圧着されたときに、前記加熱温度のすべての温度領域において、前記加熱圧着後の前記回路部材間の接続抵抗値の最大値が、最小値に対して3倍以下である、請求項14記載のフィルム状回路接続材。
- 第1の回路基板の主面上に第1の回路電極が形成された第1の回路部材と、
第2の回路基板の主面上に第2の回路電極が形成された第2の回路部材と、
前記第1の回路基板の主面と前記第2の回路基板の主面との間に設けられ、前記第1の回路電極と前記第2の回路電極とを対向配置させた状態で電気的に接続する回路接続部材と、
を備える回路部材の接続構造であって、
前記回路接続部材は、請求項12記載の回路接続材料の硬化物である、回路部材の接続構造。 - 半導体素子と、
前記半導体素子を搭載する基板と、
前記半導体素子及び前記基板間に設けられ、前記半導体素子及び前記基板を電気的に接続する半導体素子接続部材と、
を備える半導体装置であって、
前記半導体素子接続部材は、請求項1〜11のいずれか一項に記載の接着剤組成物の硬化物である、半導体装置。
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