JP5560544B2 - 接着剤組成物、フィルム状接着剤、回路接続用接着剤、接続体及び半導体装置 - Google Patents
接着剤組成物、フィルム状接着剤、回路接続用接着剤、接続体及び半導体装置 Download PDFInfo
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- JP5560544B2 JP5560544B2 JP2008214148A JP2008214148A JP5560544B2 JP 5560544 B2 JP5560544 B2 JP 5560544B2 JP 2008214148 A JP2008214148 A JP 2008214148A JP 2008214148 A JP2008214148 A JP 2008214148A JP 5560544 B2 JP5560544 B2 JP 5560544B2
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- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
- H01L2224/2733—Manufacturing methods by local deposition of the material of the layer connector in solid form
- H01L2224/27334—Manufacturing methods by local deposition of the material of the layer connector in solid form using preformed layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
- H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
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Description
本発明の接着剤組成物は、(a)チキソ性付与剤、(b)ラジカル重合性液状オリゴマ、及び(c)ラジカル重合開始剤を含む接着剤組成物であって、
前記接着剤組成物が、熱可塑性樹脂を含まない、又は熱可塑性樹脂を接着剤組成物全量100質量部に対して15質量部以下の範囲で含むものである。
<GPC条件>
使用機器:日立L−6000型(株式会社日立製作所製、商品名)
検出器:L−3300RI(株式会社日立製作所製、商品名)
カラム:ゲルパックGL−R420+ゲルパックGL−R430+ゲルパックGL−R440(計3本)(日立化成工業株式会社製、商品名)
溶離液:テトラヒドロフラン
測定温度:40℃
流量:1.75ml/min
式(1)中、R1、R2及びR3はそれぞれ独立に、水素原子、炭素数1〜5のアルキル基、炭素数1〜5のアルコキシ基、炭素数1〜5のアルコキシカルボニル基、又はアリール基を示し、R4は水素原子又はメチル基を示し、n1は1〜10の整数を示す。
次に、本発明の接続体の好適な実施形態について説明する。図1は、本発明の接続体の一実施形態を示す概略断面図である。図1に示すように、本実施形態の接続体1は、相互に対向する第1の回路部材20及び第2の回路部材30を備えており、第1の回路部材20と第2の回路部材30との間には、これらを電気的に接続する回路接続部材10が設けられている。第1の回路部材20は、第1の回路基板21と、回路基板21の主面21a上に形成される第1の回路電極22とを備えている。なお、回路基板21の主面21a上には、場合により絶縁層(図示せず)が形成されていてもよい。
次に、上述した接続体の製造方法について、その工程図である図2を参照にしつつ、説明する。
次に、本発明の半導体装置の実施形態について説明する。図3は、本発明の半導体装置の一実施形態を示す概略断面図である。図3に示すように、本実施形態の半導体装置2は、半導体素子50と、半導体の支持部材となる基板60とを備えており、半導体素子50及び基板60の間には、これらを電気的に接続する半導体素子接続部材80が設けられている。また、半導体素子接続部材80は基板60の主面60a上に積層され、半導体素子50は更にその半導体素子接続部材80上に積層されている。
次に、上述した半導体装置の製造方法について説明する。
<チキソ性付与剤の準備>
チキソ性付与剤として、有機微粒子である「メタブレンS2001」(三菱レイヨン社製商品名)、シリカ微粒子である「SE2050」(アドマテックス社製商品名)、及び、アルミナ微粒子である「AE2050」(アドマテックス社製商品名)をそれぞれ準備した。
ラジカル重合性液状オリゴマとして、イソシアヌル酸EO変性ジアクリレート「M−215」(分子量:369、東亞合成株式会社製商品名)、及び、ウレタンアクリレート「UA−6100」(分子量:2300、新中村化学株式会社製商品名)をそれぞれ準備した。
有機過酸化物(ラジカル重合開始剤)としてt−ヘキシルパーオキシ−2−エチルヘキサノエート(商品名「パーヘキシルO」、日本油脂株式会社製)を準備した。
(フェノキシ樹脂溶液の調製)
フェノキシ樹脂(商品名:PKHC、ユニオンカーバイド社製、重量平均分子量45000)40質量部を、ガラス製の容器に入れたメチルエチルケトン(商品名:2−ブタノン、和光純薬工業(株)製、純度99%)60質量部に溶解して、固形分40重量%のフェノキシ樹脂溶液を調製した。
ポリスチレン粒子の表面上に、厚さ0.2μmになるようにニッケルからなる層を設け、更にこのニッケルからなる層の表面上に、厚さ0.02μmになるよう金からなる層を設けた。こうして平均粒径4μm及び比重2.5の導電性粒子を作製した。
(実施例1)
表1に示される各配合成分を表1に示す配合割合(固形重量比)で混合した。すなわち、「メタブレンS2001」40質量部、イソシアヌル酸EO変性ジアクリレート「M−215」20質量部、ウレタンアクリレート「UA−6100」40質量部、及び、「パーヘキシルO」3質量部を混合した。この混合物に、上記の導電性粒子を配合分散させて接着剤組成物を得た。導電性粒子の配合割合は、接着剤組成物の全量に対して1.5体積%とした。
チキソ性付与剤として、「S2001」に代えて「SE2050」を40質量部配合したこと以外は実施例1と同様にして、フィルム状回路接続用接着剤を得た。
チキソ性付与剤として、「S2001」に代えて「AE2050」を40質量部配合したこと以外は実施例1と同様にして、フィルム状回路接続用接着剤を得た。
チキソ性付与剤を配合せず、ラジカル重合性液状オリゴマとして、「M−215」及び「UA−6100」に代えて「M−215」を100質量部配合したこと以外は実施例1と同様にして、接着剤組成物を得た。この接着剤組成物を用い、実施例1と同様にしてフィルム状回路接続用接着剤を得ようとしたが、フッ素樹脂フィルム上に接着剤組成物を塗工したときに、塗膜にはじきが発生し、フィルムを形成することができなかった。
ラジカル重合性液状オリゴマとして、「M−215」に代えて「UA−6100」を100質量部配合したこと以外は比較例1と同様にして、接着剤組成物を得た。この接着剤組成物を用い、実施例1と同様にしてフィルム状回路接続用接着剤を得ようとしたが、フッ素樹脂フィルム上に接着剤組成物を塗工したときに、塗膜にはじきが発生し、フィルムを形成することができなかった。
チキソ性付与剤である「S2001」の配合量を20質量部とし、熱可塑性樹脂として「PKHC」を固形重量換算で20質量部配合したこと以外は実施例1と同様にして、フィルム状回路接続用接着剤を得た。
上記で得られたフィルム状回路接続用接着剤について、塗工、乾燥後の外観を目視にて確認することにより、接着剤組成物のフィルム形成性を評価した。結果を表2に示す。なお、はじきに起因する外観不良が見られない場合、フィルム形成性が十分であると判断し「○」で示した。
ライン幅25μm、ピッチ50μm及び厚み18μmの銅配線を500本有するフレキシブル回路板(FPC)と、0.2μmの酸化インジウム(ITO)の薄層を全面に形成したガラス基板(厚み1.1mm、表面抵抗20Ω/□)との間に、上記で得られたフィルム状回路接続用接着剤を配置した。次に、熱圧着装置(加熱方式:コンスタントヒート型、東レエンジニアリング(株)製)を用いて、80℃、1MPaで3秒間仮付けした後、160℃、3MPaの条件下、それらの積層方向に10秒間の加熱加圧を行った。こうして、幅2mmにわたりFPC基板とITO基板とを実施例1、参考例2及び3、比較例3の回路接続用接着剤の硬化物により電気的に接続した接続体をそれぞれ作製した。
得られた接続体の対向する電極間の接続抵抗をマルチメータ(商品名:TR6848、アドバンテスト社製)で測定した。なお、抵抗値は、対向する電極間の抵抗150点の平均(x+3σ)で示した。
得られた接続体の部材間(フレキシブル回路板及びガラス基板間)の接着強度を、JIS−Z0237に準じて90度剥離法で測定し、評価した。ここで、接着強度の測定は、テンシロンUTM−4(商品名、東洋ボールドウィン(株)製)を使用し、剥離速度50mm/min、25℃の条件で行った。
Claims (4)
- (a)チキソ性付与剤、(b)ラジカル重合性液状オリゴマ、及び(c)ラジカル重合開始剤を含むラジカル硬化型の接着剤組成物であって、
前記(a)チキソ性付与剤が有機微粒子であり、
前記(b)ラジカル重合性液状オリゴマが重量平均分子量500〜20000のウレタンアクリレートを含み、
前記(c)ラジカル重合開始剤が有機過酸化物であり、
前記(a)チキソ性付与剤100質量部に対して、前記(b)ラジカル重合性液状オリゴマを25〜250質量部及び前記(c)ラジカル重合開始剤を0.05〜30質量部含有し、
前記接着剤組成物が、前記有機微粒子以外の熱可塑性樹脂を含まない、又は前記有機微粒子以外の熱可塑性樹脂を接着剤組成物全量100質量部に対して15質量部以下の範囲で含むことを特徴とするフィルム状回路接続用接着剤組成物。 - 前記(a)チキソ性付与剤の含有量が、接着剤組成物全量を基準として、25〜80質量%である、請求項1記載のフィルム状回路接続用接着剤組成物。
- 導電粒子を接着剤組成物全量を基準として0.1〜30体積%の割合で更に含有する、請求項1又は2記載のフィルム状回路接続用接着剤組成物。
- 相対向する回路電極を有する回路部材間に介在させ、前記相対向する回路電極同士が電気的に接続されるように前記回路部材同士を接着するために用いられるフィルム状回路接続用接着剤であって、
請求項1〜3のいずれか一項記載のフィルム状回路接続用接着剤組成物からなる、フィルム状回路接続用接着剤。
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