JPS62194644A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JPS62194644A
JPS62194644A JP61037785A JP3778586A JPS62194644A JP S62194644 A JPS62194644 A JP S62194644A JP 61037785 A JP61037785 A JP 61037785A JP 3778586 A JP3778586 A JP 3778586A JP S62194644 A JPS62194644 A JP S62194644A
Authority
JP
Japan
Prior art keywords
hole
wiring film
film
wiring
layer wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61037785A
Other languages
English (en)
Japanese (ja)
Inventor
Hiroshi Mochizuki
望月　弘
Reiji Tamaki
礼二 玉城
Junichi Arima
純一 有馬
Masaaki Ikegami
雅明 池上
Eisuke Tanaka
英祐 田中
Kenji Saito
健二 斉藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP61037785A priority Critical patent/JPS62194644A/ja
Priority to KR1019860010041A priority patent/KR900007757B1/ko
Priority to DE19873705152 priority patent/DE3705152A1/de
Priority to US07/016,787 priority patent/US4884120A/en
Publication of JPS62194644A publication Critical patent/JPS62194644A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/038—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers covering conductive structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/064—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
    • H10W20/065—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying by making at least a portion of the conductive part non-conductive, e.g. by oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP61037785A 1986-02-20 1986-02-20 半導体装置およびその製造方法 Pending JPS62194644A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP61037785A JPS62194644A (ja) 1986-02-20 1986-02-20 半導体装置およびその製造方法
KR1019860010041A KR900007757B1 (ko) 1986-02-20 1986-11-27 반도체장치 및 그 제조방법
DE19873705152 DE3705152A1 (de) 1986-02-20 1987-02-18 Halbleitereinrichtung und verfahren zu deren herstellung
US07/016,787 US4884120A (en) 1986-02-20 1987-02-20 Semiconductor device and method for making the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61037785A JPS62194644A (ja) 1986-02-20 1986-02-20 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
JPS62194644A true JPS62194644A (ja) 1987-08-27

Family

ID=12507140

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61037785A Pending JPS62194644A (ja) 1986-02-20 1986-02-20 半導体装置およびその製造方法

Country Status (4)

Country Link
US (1) US4884120A (enExample)
JP (1) JPS62194644A (enExample)
KR (1) KR900007757B1 (enExample)
DE (1) DE3705152A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12168115B2 (en) 2016-10-21 2024-12-17 Sanofi-Aventis Deutschland Gmbh Liquid medicament administration device

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6482547A (en) * 1987-09-24 1989-03-28 Tadahiro Omi Semiconductor device
US5252382A (en) * 1991-09-03 1993-10-12 Cornell Research Foundation, Inc. Interconnect structures having patterned interfaces to minimize stress migration and related electromigration damages
DE4140330C1 (enExample) * 1991-12-06 1993-03-18 Texas Instruments Deutschland Gmbh, 8050 Freising, De
US5371047A (en) * 1992-10-30 1994-12-06 International Business Machines Corporation Chip interconnection having a breathable etch stop layer
US5783483A (en) * 1993-02-24 1998-07-21 Intel Corporation Method of fabricating a barrier against metal diffusion
US5897376A (en) * 1993-09-20 1999-04-27 Seiko Instruments Inc. Method of manufacturing a semiconductor device having a reflection reducing film
US5439731A (en) * 1994-03-11 1995-08-08 Cornell Research Goundation, Inc. Interconnect structures containing blocked segments to minimize stress migration and electromigration damage
JPH09205185A (ja) 1996-01-26 1997-08-05 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3866311A (en) * 1971-06-14 1975-02-18 Nat Semiconductor Corp Method of providing electrically isolated overlapping metallic conductors
DE3109801A1 (de) * 1981-03-13 1982-09-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von halbleiterbauelementen
JPS5955037A (ja) * 1982-09-24 1984-03-29 Hitachi Ltd 半導体装置
GB8316477D0 (en) * 1983-06-16 1983-07-20 Plessey Co Plc Producing layered structure
JPS60234346A (ja) * 1984-05-07 1985-11-21 Nec Corp 半導体装置
JPS61280638A (ja) * 1985-06-06 1986-12-11 Toshiba Corp 半導体装置の製造方法
US4707457A (en) * 1986-04-03 1987-11-17 Advanced Micro Devices, Inc. Method for making improved contact for integrated circuit structure
JP3480738B2 (ja) * 1992-06-23 2003-12-22 株式会社東芝 情報処理装置における表示方法及び情報処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12168115B2 (en) 2016-10-21 2024-12-17 Sanofi-Aventis Deutschland Gmbh Liquid medicament administration device

Also Published As

Publication number Publication date
DE3705152A1 (de) 1987-08-27
KR870008388A (ko) 1987-09-26
US4884120A (en) 1989-11-28
KR900007757B1 (ko) 1990-10-19
DE3705152C2 (enExample) 1989-07-20

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