KR900007757B1 - 반도체장치 및 그 제조방법 - Google Patents

반도체장치 및 그 제조방법 Download PDF

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Publication number
KR900007757B1
KR900007757B1 KR1019860010041A KR860010041A KR900007757B1 KR 900007757 B1 KR900007757 B1 KR 900007757B1 KR 1019860010041 A KR1019860010041 A KR 1019860010041A KR 860010041 A KR860010041 A KR 860010041A KR 900007757 B1 KR900007757 B1 KR 900007757B1
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KR
South Korea
Prior art keywords
film
hole
wiring
insulating film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019860010041A
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English (en)
Korean (ko)
Other versions
KR870008388A (ko
Inventor
히로시 모찌스끼
레이지 다마끼
준 이찌 아리마
마사아끼 이께가미
에이스께 다나까
겡지 사이또
Original Assignee
미쓰비시전기 주식회사
시끼 모리야
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 미쓰비시전기 주식회사, 시끼 모리야 filed Critical 미쓰비시전기 주식회사
Publication of KR870008388A publication Critical patent/KR870008388A/ko
Application granted granted Critical
Publication of KR900007757B1 publication Critical patent/KR900007757B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/038—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers covering conductive structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/064—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
    • H10W20/065—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying by making at least a portion of the conductive part non-conductive, e.g. by oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1019860010041A 1986-02-20 1986-11-27 반도체장치 및 그 제조방법 Expired KR900007757B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61037785A JPS62194644A (ja) 1986-02-20 1986-02-20 半導体装置およびその製造方法
JP37785 1986-02-20
JP61-37785 1986-02-20

Publications (2)

Publication Number Publication Date
KR870008388A KR870008388A (ko) 1987-09-26
KR900007757B1 true KR900007757B1 (ko) 1990-10-19

Family

ID=12507140

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860010041A Expired KR900007757B1 (ko) 1986-02-20 1986-11-27 반도체장치 및 그 제조방법

Country Status (4)

Country Link
US (1) US4884120A (enExample)
JP (1) JPS62194644A (enExample)
KR (1) KR900007757B1 (enExample)
DE (1) DE3705152A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6482547A (en) * 1987-09-24 1989-03-28 Tadahiro Omi Semiconductor device
US5252382A (en) * 1991-09-03 1993-10-12 Cornell Research Foundation, Inc. Interconnect structures having patterned interfaces to minimize stress migration and related electromigration damages
DE4140330C1 (enExample) * 1991-12-06 1993-03-18 Texas Instruments Deutschland Gmbh, 8050 Freising, De
US5371047A (en) * 1992-10-30 1994-12-06 International Business Machines Corporation Chip interconnection having a breathable etch stop layer
US5783483A (en) * 1993-02-24 1998-07-21 Intel Corporation Method of fabricating a barrier against metal diffusion
US5897376A (en) * 1993-09-20 1999-04-27 Seiko Instruments Inc. Method of manufacturing a semiconductor device having a reflection reducing film
US5439731A (en) * 1994-03-11 1995-08-08 Cornell Research Goundation, Inc. Interconnect structures containing blocked segments to minimize stress migration and electromigration damage
JPH09205185A (ja) 1996-01-26 1997-08-05 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
EP4541394A3 (en) 2016-10-21 2025-07-09 Sanofi-Aventis Deutschland GmbH Liquid medicament administration device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3866311A (en) * 1971-06-14 1975-02-18 Nat Semiconductor Corp Method of providing electrically isolated overlapping metallic conductors
DE3109801A1 (de) * 1981-03-13 1982-09-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von halbleiterbauelementen
JPS5955037A (ja) * 1982-09-24 1984-03-29 Hitachi Ltd 半導体装置
GB8316477D0 (en) * 1983-06-16 1983-07-20 Plessey Co Plc Producing layered structure
JPS60234346A (ja) * 1984-05-07 1985-11-21 Nec Corp 半導体装置
JPS61280638A (ja) * 1985-06-06 1986-12-11 Toshiba Corp 半導体装置の製造方法
US4707457A (en) * 1986-04-03 1987-11-17 Advanced Micro Devices, Inc. Method for making improved contact for integrated circuit structure
JP3480738B2 (ja) * 1992-06-23 2003-12-22 株式会社東芝 情報処理装置における表示方法及び情報処理装置

Also Published As

Publication number Publication date
DE3705152A1 (de) 1987-08-27
KR870008388A (ko) 1987-09-26
JPS62194644A (ja) 1987-08-27
US4884120A (en) 1989-11-28
DE3705152C2 (enExample) 1989-07-20

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