KR900007757B1 - 반도체장치 및 그 제조방법 - Google Patents

반도체장치 및 그 제조방법 Download PDF

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Publication number
KR900007757B1
KR900007757B1 KR1019860010041A KR860010041A KR900007757B1 KR 900007757 B1 KR900007757 B1 KR 900007757B1 KR 1019860010041 A KR1019860010041 A KR 1019860010041A KR 860010041 A KR860010041 A KR 860010041A KR 900007757 B1 KR900007757 B1 KR 900007757B1
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KR
South Korea
Prior art keywords
film
hole
wiring
insulating film
semiconductor device
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019860010041A
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English (en)
Korean (ko)
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KR870008388A (ko
Inventor
히로시 모찌스끼
레이지 다마끼
준 이찌 아리마
마사아끼 이께가미
에이스께 다나까
겡지 사이또
Original Assignee
미쓰비시전기 주식회사
시끼 모리야
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Publication of KR870008388A publication Critical patent/KR870008388A/ko
Application granted granted Critical
Publication of KR900007757B1 publication Critical patent/KR900007757B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1019860010041A 1986-02-20 1986-11-27 반도체장치 및 그 제조방법 Expired KR900007757B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61037785A JPS62194644A (ja) 1986-02-20 1986-02-20 半導体装置およびその製造方法
JP37785 1986-02-20
JP61-37785 1986-02-20

Publications (2)

Publication Number Publication Date
KR870008388A KR870008388A (ko) 1987-09-26
KR900007757B1 true KR900007757B1 (ko) 1990-10-19

Family

ID=12507140

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860010041A Expired KR900007757B1 (ko) 1986-02-20 1986-11-27 반도체장치 및 그 제조방법

Country Status (4)

Country Link
US (1) US4884120A (enExample)
JP (1) JPS62194644A (enExample)
KR (1) KR900007757B1 (enExample)
DE (1) DE3705152A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6482547A (en) * 1987-09-24 1989-03-28 Tadahiro Omi Semiconductor device
US5252382A (en) * 1991-09-03 1993-10-12 Cornell Research Foundation, Inc. Interconnect structures having patterned interfaces to minimize stress migration and related electromigration damages
DE4140330C1 (enExample) * 1991-12-06 1993-03-18 Texas Instruments Deutschland Gmbh, 8050 Freising, De
US5371047A (en) * 1992-10-30 1994-12-06 International Business Machines Corporation Chip interconnection having a breathable etch stop layer
US5679982A (en) * 1993-02-24 1997-10-21 Intel Corporation Barrier against metal diffusion
US5897376A (en) * 1993-09-20 1999-04-27 Seiko Instruments Inc. Method of manufacturing a semiconductor device having a reflection reducing film
US5439731A (en) * 1994-03-11 1995-08-08 Cornell Research Goundation, Inc. Interconnect structures containing blocked segments to minimize stress migration and electromigration damage
JPH09205185A (ja) 1996-01-26 1997-08-05 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
US12168115B2 (en) 2016-10-21 2024-12-17 Sanofi-Aventis Deutschland Gmbh Liquid medicament administration device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3866311A (en) * 1971-06-14 1975-02-18 Nat Semiconductor Corp Method of providing electrically isolated overlapping metallic conductors
DE3109801A1 (de) * 1981-03-13 1982-09-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von halbleiterbauelementen
JPS5955037A (ja) * 1982-09-24 1984-03-29 Hitachi Ltd 半導体装置
GB8316477D0 (en) * 1983-06-16 1983-07-20 Plessey Co Plc Producing layered structure
JPS60234346A (ja) * 1984-05-07 1985-11-21 Nec Corp 半導体装置
JPS61280638A (ja) * 1985-06-06 1986-12-11 Toshiba Corp 半導体装置の製造方法
US4707457A (en) * 1986-04-03 1987-11-17 Advanced Micro Devices, Inc. Method for making improved contact for integrated circuit structure
JP3480738B2 (ja) * 1992-06-23 2003-12-22 株式会社東芝 情報処理装置における表示方法及び情報処理装置

Also Published As

Publication number Publication date
DE3705152A1 (de) 1987-08-27
DE3705152C2 (enExample) 1989-07-20
KR870008388A (ko) 1987-09-26
US4884120A (en) 1989-11-28
JPS62194644A (ja) 1987-08-27

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