JPS60262430A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60262430A
JPS60262430A JP59118423A JP11842384A JPS60262430A JP S60262430 A JPS60262430 A JP S60262430A JP 59118423 A JP59118423 A JP 59118423A JP 11842384 A JP11842384 A JP 11842384A JP S60262430 A JPS60262430 A JP S60262430A
Authority
JP
Japan
Prior art keywords
semiconductor element
wiring pattern
resin
metal
wiring board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59118423A
Other languages
English (en)
Japanese (ja)
Other versions
JPH027180B2 (enFirst
Inventor
Kenzo Hatada
畑田　賢造
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP59118423A priority Critical patent/JPS60262430A/ja
Publication of JPS60262430A publication Critical patent/JPS60262430A/ja
Publication of JPH027180B2 publication Critical patent/JPH027180B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/012—Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/856—Bump connectors and die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
JP59118423A 1984-06-08 1984-06-08 半導体装置の製造方法 Granted JPS60262430A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59118423A JPS60262430A (ja) 1984-06-08 1984-06-08 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59118423A JPS60262430A (ja) 1984-06-08 1984-06-08 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60262430A true JPS60262430A (ja) 1985-12-25
JPH027180B2 JPH027180B2 (enFirst) 1990-02-15

Family

ID=14736271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59118423A Granted JPS60262430A (ja) 1984-06-08 1984-06-08 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60262430A (enFirst)

Cited By (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61194732A (ja) * 1985-02-22 1986-08-29 Casio Comput Co Ltd 半導体ペレツトと基板の接合方法
JPS62169433A (ja) * 1986-01-22 1987-07-25 Fuji Xerox Co Ltd 半導体装置の製造方法
JPS6313337A (ja) * 1986-07-04 1988-01-20 Fuji Electric Co Ltd 半導体素子の実装方法
JPS6329973A (ja) * 1986-07-23 1988-02-08 Nec Corp 電子写真複写装置
JPS6343337A (ja) * 1986-08-09 1988-02-24 Toshiba Corp 半導体装置
JPS63127541A (ja) * 1986-11-17 1988-05-31 Matsushita Electric Ind Co Ltd チップの接合方法
JPS63150930A (ja) * 1986-12-15 1988-06-23 Shin Etsu Polymer Co Ltd 半導体装置
JPS63151031A (ja) * 1986-12-16 1988-06-23 Matsushita Electric Ind Co Ltd 半導体装置の接続方法
JPS63237427A (ja) * 1987-03-25 1988-10-03 Mitsubishi Electric Corp 半導体素子の実装方法
JPS63293840A (ja) * 1987-05-26 1988-11-30 Matsushita Electric Ind Co Ltd 実装体
JPS642331A (en) * 1987-06-25 1989-01-06 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPH01226161A (ja) * 1988-03-07 1989-09-08 Matsushita Electric Ind Co Ltd 半導体チップの接続方法
JPH0273690A (ja) * 1988-09-09 1990-03-13 Mitsui Mining & Smelting Co Ltd 実装基板の製造方法
JPH02110950A (ja) * 1988-10-19 1990-04-24 Matsushita Electric Ind Co Ltd 半導体装置
JPH02110948A (ja) * 1988-10-19 1990-04-24 Matsushita Electric Ind Co Ltd 半導体装置及びその実装方法
JPH02110951A (ja) * 1988-10-19 1990-04-24 Matsushita Electric Ind Co Ltd 半導体装置の製造方法および装置
JPH02114933U (enFirst) * 1989-02-28 1990-09-14
JPH02263476A (ja) * 1989-04-04 1990-10-26 Matsushita Electric Ind Co Ltd 半導体実装方法
JPH02263481A (ja) * 1989-04-04 1990-10-26 Matsushita Electric Ind Co Ltd 半導体装置およびそれを用いたイメージセンサ
JPH03173436A (ja) * 1989-12-01 1991-07-26 Matsushita Electric Ind Co Ltd 半導体装置
US5081520A (en) * 1989-05-16 1992-01-14 Minolta Camera Kabushiki Kaisha Chip mounting substrate having an integral molded projection and conductive pattern
DE19529490A1 (de) * 1995-08-10 1997-02-13 Fraunhofer Ges Forschung Chipkontaktierungsverfahren, damit hergestellte elektronische Schaltung und Trägersubstrat zur Kontaktierung von Chips
JPH09306951A (ja) * 1996-11-18 1997-11-28 Fuji Xerox Co Ltd 半導体装置の製造方法
WO1998030073A1 (en) * 1996-12-27 1998-07-09 Matsushita Electric Industrial Co., Ltd. Method and device for mounting electronic component on circuit board
US5883432A (en) * 1995-11-30 1999-03-16 Ricoh Company, Ltd. Connection structure between electrode pad on semiconductor device and printed pattern on printed circuit board
DE10120029A1 (de) * 2001-02-13 2002-08-29 Pac Tech Gmbh Presskontaktierung von Mikrochips
US6674178B1 (en) 1999-09-20 2004-01-06 Nec Electronics Corporation Semiconductor device having dispersed filler between electrodes
US6864119B2 (en) 2002-10-04 2005-03-08 Sharp Kabushiki Kaisha COF semiconductor device and a manufacturing method for the same
CN1329981C (zh) * 2003-06-30 2007-08-01 夏普株式会社 半导体载体用膜、及使用其的半导体装置和液晶模块
WO2007134581A1 (de) * 2006-05-19 2007-11-29 Osram Opto Semiconductors Gmbh Elektrisch leitende verbindung mit isolierendem verbindungsmedium
US7304394B2 (en) 2004-04-08 2007-12-04 Sharp Kabushiki Kaisha Semiconductor device and method for manufacturing same
US7553890B2 (en) 1997-03-31 2009-06-30 Hitachi Chemical Company, Ltd. Circuit-connecting material and circuit terminal connected structure and connecting method
US7629056B2 (en) 1997-03-31 2009-12-08 Hitachi Chemical Company, Ltd. Circuit-connecting material and circuit terminal connected structure and connecting method
US7687319B2 (en) 2005-10-06 2010-03-30 Fujitsu Microelectronics Limited Semiconductor device and manufacturing method thereof
US7750457B2 (en) 2004-03-30 2010-07-06 Sharp Kabushiki Kaisha Semiconductor apparatus, manufacturing method thereof, semiconductor module apparatus using semiconductor apparatus, and wire substrate for semiconductor apparatus
US7755203B2 (en) 2006-08-18 2010-07-13 Fujitsu Semiconductor Limited Circuit substrate and semiconductor device
US8148204B2 (en) 2005-08-22 2012-04-03 Hitachi Chemical Dupont Microsystems, Ltd. Circuit connection structure, method for producing the same and semiconductor substrate for circuit connection structure
JP2013065705A (ja) * 2011-09-16 2013-04-11 Panasonic Corp 電子部品の実装方法及び実装システム
US8613623B2 (en) 2008-09-30 2013-12-24 Sony Chemical & Information Device Corporation Acrylic insulating adhesive
US8975192B2 (en) 2005-08-22 2015-03-10 Hitachi Chemical Dupont Microsystems Ltd. Method for manufacturing semiconductor device
US9306132B2 (en) 2013-03-28 2016-04-05 Toshiba Hokuto Electronics Corporation Light emitting device and method for manufacturing the same
US9837587B2 (en) 2013-03-28 2017-12-05 Toshiba Hokuto Electronics Corporation Light-emitting device with improved flexural resistance and electrical connection between layers, production method therefor, and device using light-emitting device
US9905545B2 (en) 2014-03-25 2018-02-27 Toshiba Hokuto Electronics Corporation Light emitting device
US10096581B2 (en) 2014-09-26 2018-10-09 Toshiba Hokuto Electronics Corporation Light emitting module
US10461063B2 (en) 2013-12-02 2019-10-29 Toshiba Hokuto Electronics Corporation Light-emitting device
US10483443B2 (en) 2013-12-02 2019-11-19 Toshiba Hokuto Electronics Corporation Light emitting device and manufacturing method thereof
US10553769B2 (en) 2013-12-02 2020-02-04 Toshiba Hokuto Electronics Corporation Light-emitting unit and manufacturing method of light-emitting unit
US10580949B2 (en) 2014-09-26 2020-03-03 Toshiba Hokuto Electronics Corporation Light emitting module
DE102017108256B4 (de) 2016-04-21 2024-01-18 San-Ei Kagaku Co., Ltd. Wärmehärtbare harzzusammensetzung

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5677246A (en) 1994-11-29 1997-10-14 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor devices

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51100679A (enFirst) * 1975-03-03 1976-09-06 Suwa Seikosha Kk
JPS51119732A (en) * 1975-04-15 1976-10-20 Seiko Epson Corp Adhesive with anisotropy in the direction of conducting path
JPS5357481A (en) * 1976-11-04 1978-05-24 Canon Inc Connecting process
JPS56103876A (en) * 1980-01-22 1981-08-19 Fujikura Kasei Kk Method of connecting transparent conductor
JPS56122193A (en) * 1980-01-31 1981-09-25 Rogers Corp Electrically connected unit and method therefor
JPS56167340A (en) * 1980-05-27 1981-12-23 Toshiba Corp Junction of semicondctor pellet with substrate
JPS57130437A (en) * 1981-02-06 1982-08-12 Citizen Watch Co Ltd Sealing method of ic
JPS5873126A (ja) * 1981-10-27 1983-05-02 Seiko Keiyo Kogyo Kk 半導体装置の実装方法
JPS58103143A (ja) * 1981-12-16 1983-06-20 Sharp Corp 電子部品の封止方法
JPS58107641A (ja) * 1981-12-21 1983-06-27 Seiko Keiyo Kogyo Kk 半導体装置の封止方法
JPS59178758A (ja) * 1983-03-29 1984-10-11 Sharp Corp 半導体チツプの基板実装方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51100679A (enFirst) * 1975-03-03 1976-09-06 Suwa Seikosha Kk
JPS51119732A (en) * 1975-04-15 1976-10-20 Seiko Epson Corp Adhesive with anisotropy in the direction of conducting path
JPS5357481A (en) * 1976-11-04 1978-05-24 Canon Inc Connecting process
JPS56103876A (en) * 1980-01-22 1981-08-19 Fujikura Kasei Kk Method of connecting transparent conductor
JPS56122193A (en) * 1980-01-31 1981-09-25 Rogers Corp Electrically connected unit and method therefor
JPS56167340A (en) * 1980-05-27 1981-12-23 Toshiba Corp Junction of semicondctor pellet with substrate
JPS57130437A (en) * 1981-02-06 1982-08-12 Citizen Watch Co Ltd Sealing method of ic
JPS5873126A (ja) * 1981-10-27 1983-05-02 Seiko Keiyo Kogyo Kk 半導体装置の実装方法
JPS58103143A (ja) * 1981-12-16 1983-06-20 Sharp Corp 電子部品の封止方法
JPS58107641A (ja) * 1981-12-21 1983-06-27 Seiko Keiyo Kogyo Kk 半導体装置の封止方法
JPS59178758A (ja) * 1983-03-29 1984-10-11 Sharp Corp 半導体チツプの基板実装方法

Cited By (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61194732A (ja) * 1985-02-22 1986-08-29 Casio Comput Co Ltd 半導体ペレツトと基板の接合方法
JPS62169433A (ja) * 1986-01-22 1987-07-25 Fuji Xerox Co Ltd 半導体装置の製造方法
JPS6313337A (ja) * 1986-07-04 1988-01-20 Fuji Electric Co Ltd 半導体素子の実装方法
JPS6329973A (ja) * 1986-07-23 1988-02-08 Nec Corp 電子写真複写装置
JPS6343337A (ja) * 1986-08-09 1988-02-24 Toshiba Corp 半導体装置
JPS63127541A (ja) * 1986-11-17 1988-05-31 Matsushita Electric Ind Co Ltd チップの接合方法
JPS63150930A (ja) * 1986-12-15 1988-06-23 Shin Etsu Polymer Co Ltd 半導体装置
JPS63151031A (ja) * 1986-12-16 1988-06-23 Matsushita Electric Ind Co Ltd 半導体装置の接続方法
JPS63237427A (ja) * 1987-03-25 1988-10-03 Mitsubishi Electric Corp 半導体素子の実装方法
JPS63293840A (ja) * 1987-05-26 1988-11-30 Matsushita Electric Ind Co Ltd 実装体
JPS642331A (en) * 1987-06-25 1989-01-06 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPH01226161A (ja) * 1988-03-07 1989-09-08 Matsushita Electric Ind Co Ltd 半導体チップの接続方法
JPH0273690A (ja) * 1988-09-09 1990-03-13 Mitsui Mining & Smelting Co Ltd 実装基板の製造方法
JPH02110948A (ja) * 1988-10-19 1990-04-24 Matsushita Electric Ind Co Ltd 半導体装置及びその実装方法
JPH02110951A (ja) * 1988-10-19 1990-04-24 Matsushita Electric Ind Co Ltd 半導体装置の製造方法および装置
JPH02110950A (ja) * 1988-10-19 1990-04-24 Matsushita Electric Ind Co Ltd 半導体装置
JPH02114933U (enFirst) * 1989-02-28 1990-09-14
JPH02263476A (ja) * 1989-04-04 1990-10-26 Matsushita Electric Ind Co Ltd 半導体実装方法
JPH02263481A (ja) * 1989-04-04 1990-10-26 Matsushita Electric Ind Co Ltd 半導体装置およびそれを用いたイメージセンサ
US5081520A (en) * 1989-05-16 1992-01-14 Minolta Camera Kabushiki Kaisha Chip mounting substrate having an integral molded projection and conductive pattern
JPH03173436A (ja) * 1989-12-01 1991-07-26 Matsushita Electric Ind Co Ltd 半導体装置
DE19529490A1 (de) * 1995-08-10 1997-02-13 Fraunhofer Ges Forschung Chipkontaktierungsverfahren, damit hergestellte elektronische Schaltung und Trägersubstrat zur Kontaktierung von Chips
US5883432A (en) * 1995-11-30 1999-03-16 Ricoh Company, Ltd. Connection structure between electrode pad on semiconductor device and printed pattern on printed circuit board
JPH09306951A (ja) * 1996-11-18 1997-11-28 Fuji Xerox Co Ltd 半導体装置の製造方法
WO1998030073A1 (en) * 1996-12-27 1998-07-09 Matsushita Electric Industrial Co., Ltd. Method and device for mounting electronic component on circuit board
US6981317B1 (en) 1996-12-27 2006-01-03 Matsushita Electric Industrial Co., Ltd. Method and device for mounting electronic component on circuit board
US7604868B2 (en) 1997-03-31 2009-10-20 Hitachi Chemical Company, Ltd. Electronic circuit including circuit-connecting material
US7629050B2 (en) 1997-03-31 2009-12-08 Hitachi Chemical Company, Ltd. Circuit-connecting material and circuit terminal connected structure and connecting method
US8142605B2 (en) 1997-03-31 2012-03-27 Hitachi Chemical Company, Ltd. Circuit-connecting material and circuit terminal connected structure and connecting method
US7968196B2 (en) 1997-03-31 2011-06-28 Hitachi Chemical Company, Ltd. Circuit-connecting material and circuit terminal connected structure and connecting method
US7967943B2 (en) 1997-03-31 2011-06-28 Hitachi Chemical Company, Ltd. Circuit-connecting material and circuit terminal connected structure and connecting method
US7879956B2 (en) 1997-03-31 2011-02-01 Hitachi Chemical Company, Ltd. Circuit-connecting material and circuit terminal connected structure and connecting method
US7553890B2 (en) 1997-03-31 2009-06-30 Hitachi Chemical Company, Ltd. Circuit-connecting material and circuit terminal connected structure and connecting method
US7629056B2 (en) 1997-03-31 2009-12-08 Hitachi Chemical Company, Ltd. Circuit-connecting material and circuit terminal connected structure and connecting method
US7618713B2 (en) 1997-03-31 2009-11-17 Hitachi Chemical Company, Ltd. Circuit-connecting material and circuit terminal connected structure and connecting method
US6674178B1 (en) 1999-09-20 2004-01-06 Nec Electronics Corporation Semiconductor device having dispersed filler between electrodes
DE10120029A1 (de) * 2001-02-13 2002-08-29 Pac Tech Gmbh Presskontaktierung von Mikrochips
US6864119B2 (en) 2002-10-04 2005-03-08 Sharp Kabushiki Kaisha COF semiconductor device and a manufacturing method for the same
CN1329981C (zh) * 2003-06-30 2007-08-01 夏普株式会社 半导体载体用膜、及使用其的半导体装置和液晶模块
US7750457B2 (en) 2004-03-30 2010-07-06 Sharp Kabushiki Kaisha Semiconductor apparatus, manufacturing method thereof, semiconductor module apparatus using semiconductor apparatus, and wire substrate for semiconductor apparatus
US7304394B2 (en) 2004-04-08 2007-12-04 Sharp Kabushiki Kaisha Semiconductor device and method for manufacturing same
US8975192B2 (en) 2005-08-22 2015-03-10 Hitachi Chemical Dupont Microsystems Ltd. Method for manufacturing semiconductor device
US8148204B2 (en) 2005-08-22 2012-04-03 Hitachi Chemical Dupont Microsystems, Ltd. Circuit connection structure, method for producing the same and semiconductor substrate for circuit connection structure
US7687319B2 (en) 2005-10-06 2010-03-30 Fujitsu Microelectronics Limited Semiconductor device and manufacturing method thereof
US8102060B2 (en) 2006-05-19 2012-01-24 Osram Opto Semiconductors Gmbh Electrically conducting connection with insulating connection medium
WO2007134581A1 (de) * 2006-05-19 2007-11-29 Osram Opto Semiconductors Gmbh Elektrisch leitende verbindung mit isolierendem verbindungsmedium
JP2009537970A (ja) * 2006-05-19 2009-10-29 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 絶縁性接続媒体を用いた電気伝導性接続部
KR101367545B1 (ko) * 2006-05-19 2014-02-26 오스람 옵토 세미컨덕터스 게엠베하 절연성 결합 매체를 이용하는 전기 전도적 결합
US7755203B2 (en) 2006-08-18 2010-07-13 Fujitsu Semiconductor Limited Circuit substrate and semiconductor device
US8613623B2 (en) 2008-09-30 2013-12-24 Sony Chemical & Information Device Corporation Acrylic insulating adhesive
JP2013065705A (ja) * 2011-09-16 2013-04-11 Panasonic Corp 電子部品の実装方法及び実装システム
US9627594B2 (en) 2013-03-28 2017-04-18 Toshiba Hokuto Electronics Corporation Light emitting device and method for manufacturing the same
US9837587B2 (en) 2013-03-28 2017-12-05 Toshiba Hokuto Electronics Corporation Light-emitting device with improved flexural resistance and electrical connection between layers, production method therefor, and device using light-emitting device
US11784290B2 (en) 2013-03-28 2023-10-10 Nichia Corporation Light-emitting device with improved flexural resistance and electrical connection between layers, production method therefor, and device using light-emitting device
US9306132B2 (en) 2013-03-28 2016-04-05 Toshiba Hokuto Electronics Corporation Light emitting device and method for manufacturing the same
US10910539B2 (en) 2013-12-02 2021-02-02 Toshiba Hokuto Electronics Corporation Light emitting device and manufacturing method thereof
US10461063B2 (en) 2013-12-02 2019-10-29 Toshiba Hokuto Electronics Corporation Light-emitting device
US10483443B2 (en) 2013-12-02 2019-11-19 Toshiba Hokuto Electronics Corporation Light emitting device and manufacturing method thereof
US10553769B2 (en) 2013-12-02 2020-02-04 Toshiba Hokuto Electronics Corporation Light-emitting unit and manufacturing method of light-emitting unit
US11538972B2 (en) 2013-12-02 2022-12-27 Nichia Corporation Light-emitting unit and manufacturing method of light-emitting unit
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