JPS5730829A - Micropattern formation method - Google Patents

Micropattern formation method

Info

Publication number
JPS5730829A
JPS5730829A JP10499080A JP10499080A JPS5730829A JP S5730829 A JPS5730829 A JP S5730829A JP 10499080 A JP10499080 A JP 10499080A JP 10499080 A JP10499080 A JP 10499080A JP S5730829 A JPS5730829 A JP S5730829A
Authority
JP
Japan
Prior art keywords
solution
aluminum
micropattern
photoresist
lift
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10499080A
Other languages
English (en)
Inventor
Toshiharu Matsuzawa
Kikuo Doda
Takao Iwayagi
Hiroshi Yanagisawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10499080A priority Critical patent/JPS5730829A/ja
Priority to US06/288,481 priority patent/US4536421A/en
Priority to DE8181303514T priority patent/DE3172722D1/de
Priority to EP81303514A priority patent/EP0045639B1/en
Publication of JPS5730829A publication Critical patent/JPS5730829A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/008—Azides
    • G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
    • G03F7/0125—Macromolecular azides; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the macromolecular azides
JP10499080A 1980-08-01 1980-08-01 Micropattern formation method Pending JPS5730829A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP10499080A JPS5730829A (en) 1980-08-01 1980-08-01 Micropattern formation method
US06/288,481 US4536421A (en) 1980-08-01 1981-07-30 Method of forming a microscopic pattern
DE8181303514T DE3172722D1 (en) 1980-08-01 1981-07-31 Method of forming a microscopic pattern
EP81303514A EP0045639B1 (en) 1980-08-01 1981-07-31 Method of forming a microscopic pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10499080A JPS5730829A (en) 1980-08-01 1980-08-01 Micropattern formation method

Publications (1)

Publication Number Publication Date
JPS5730829A true JPS5730829A (en) 1982-02-19

Family

ID=14395526

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10499080A Pending JPS5730829A (en) 1980-08-01 1980-08-01 Micropattern formation method

Country Status (4)

Country Link
US (1) US4536421A (ja)
EP (1) EP0045639B1 (ja)
JP (1) JPS5730829A (ja)
DE (1) DE3172722D1 (ja)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160128A (en) * 1981-03-30 1982-10-02 Hitachi Ltd Fine pattern forming method
JPS57204124A (en) * 1981-06-10 1982-12-14 Hitachi Ltd Forming method for minute pattern
JPS58203438A (ja) * 1982-05-24 1983-11-26 Hitachi Ltd 微細パタ−ン形成方法
JPS60134236A (ja) * 1983-12-23 1985-07-17 Hitachi Ltd 微細パタ−ン形成法
JPS60170008A (ja) * 1984-02-15 1985-09-03 Hitachi Ltd 磁気ヘツド
JPS61156044A (ja) * 1984-12-27 1986-07-15 Nec Corp レジストステンシルマスクの製造方法
JPS61275747A (ja) * 1985-05-30 1986-12-05 Nec Corp ネガレジスト材料
JPH0285857A (ja) * 1988-09-22 1990-03-27 Toshiba Corp 感光性樹脂組成物
JP2005316412A (ja) * 2004-03-31 2005-11-10 Nippon Zeon Co Ltd 感放射線性樹脂組成物
KR101148454B1 (ko) 2004-03-31 2012-05-25 제온 코포레이션 감방사선성 수지 조성물
CN112992660A (zh) * 2021-05-10 2021-06-18 度亘激光技术（苏州）有限公司 半导体结构形成方法

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5872139A (ja) * 1981-10-26 1983-04-30 Tokyo Ohka Kogyo Co Ltd 感光性材料
US4439516A (en) * 1982-03-15 1984-03-27 Shipley Company Inc. High temperature positive diazo photoresist processing using polyvinyl phenol
JPS58205147A (ja) * 1982-05-25 1983-11-30 Sumitomo Chem Co Ltd ポジ型フオトレジスト組成物
DE3246106A1 (de) * 1982-12-13 1984-06-14 Hoechst Ag, 6230 Frankfurt Lichtempfindliches gemisch, daraus hergestelltes lichtempfindliches kopiermaterial und verfahren zur herstellung einer druckform aus dem kopiermaterial
US4609615A (en) * 1983-03-31 1986-09-02 Oki Electric Industry Co., Ltd. Process for forming pattern with negative resist using quinone diazide compound
JPS60107644A (ja) * 1983-09-16 1985-06-13 フイリツプ　エイ．ハント　ケミカル　コ−ポレ−シヨン 現像しうる水性ネガレジスト組成物
US4670297A (en) * 1985-06-21 1987-06-02 Raytheon Company Evaporated thick metal and airbridge interconnects and method of manufacture
US4897338A (en) * 1987-08-03 1990-01-30 Allied-Signal Inc. Method for the manufacture of multilayer printed circuit boards
DE3800617A1 (de) * 1988-01-12 1989-07-20 Hoechst Ag Elektrophotographisches aufzeichnungsmaterial
JP2538081B2 (ja) * 1988-11-28 1996-09-25 松下電子工業株式会社 現像液及びパタ―ン形成方法
US5486449A (en) * 1989-02-07 1996-01-23 Rohm Co., Ltd. Photomask, photoresist and photolithography for a monolithic IC
US5126232A (en) * 1989-05-26 1992-06-30 Seagate Technology, Inc. Pole design for thin film magnetic heads
US5156936A (en) * 1989-09-19 1992-10-20 U.S. Philips Corporation Contact device for the photocathode of photoelectric tubes and manufacturing method
US5221596A (en) * 1991-09-03 1993-06-22 Motorola, Inc. Method of forming a retrograde photoresist profile
US5281447A (en) * 1991-10-25 1994-01-25 International Business Machines Corporation Patterned deposition of metals via photochemical decomposition of metal-oxalate complexes
US6344234B1 (en) * 1995-06-07 2002-02-05 International Business Machines Corportion Method for forming reflowed solder ball with low melting point metal cap
SE9502258D0 (sv) * 1995-06-21 1995-06-21 Pharmacia Biotech Ab Method for the manufacture of a membrane-containing microstructure
US5786028A (en) * 1996-09-05 1998-07-28 Cantwell; Jay S. Masking tape and method
US6220333B1 (en) 1998-11-06 2001-04-24 Jay S. Cantwell Bar code stencil and method of use
JP2003241183A (ja) * 2002-02-13 2003-08-27 Koninkl Philips Electronics Nv 拡散反射構造体を用いた液晶表示装置及びその製造方法
JP2004193332A (ja) * 2002-12-11 2004-07-08 Oki Electric Ind Co Ltd 成膜方法
US9142533B2 (en) * 2010-05-20 2015-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate interconnections having different sizes
US9425136B2 (en) 2012-04-17 2016-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Conical-shaped or tier-shaped pillar connections
US9299674B2 (en) 2012-04-18 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Bump-on-trace interconnect
CN103426978B (zh) * 2012-05-17 2016-09-07 泰州畅瑞照明有限公司 Led芯片的制造方法
US9111817B2 (en) 2012-09-18 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Bump structure and method of forming same
CN104797086A (zh) * 2014-01-17 2015-07-22 冠捷投资有限公司 于基材上形成线路图形的方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5388728A (en) * 1977-01-14 1978-08-04 Toshiba Corp Method of forming pattern
JPS5472976A (en) * 1977-11-22 1979-06-11 Fujitsu Ltd Pattern forming method
JPS5582437A (en) * 1978-12-15 1980-06-21 Fujitsu Ltd Method of making pattern
JPS5595945A (en) * 1979-01-12 1980-07-21 Nec Corp Production of negative type resist image
JPS55156941A (en) * 1979-05-24 1980-12-06 Tokyo Ohka Kogyo Co Ltd Micropattern forming method
JPS628777A (ja) * 1985-07-03 1987-01-16 株式会社　タカラ 変形玩具

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1956282A1 (de) * 1969-11-08 1971-05-13 Agfa Gevaert Ag Lichtvernetzbare Schichten
GB1375461A (ja) * 1972-05-05 1974-11-27
JPS5934293B2 (ja) * 1977-04-20 1984-08-21 王子製紙株式会社 感光性組成物
US4115120A (en) * 1977-09-29 1978-09-19 International Business Machines Corporation Method of forming thin film patterns by differential pre-baking of resist
US4211834A (en) * 1977-12-30 1980-07-08 International Business Machines Corporation Method of using a o-quinone diazide sensitized phenol-formaldehyde resist as a deep ultraviolet light exposure mask
US4212935A (en) * 1978-02-24 1980-07-15 International Business Machines Corporation Method of modifying the development profile of photoresists
DE2948324C2 (de) * 1978-12-01 1993-01-14 Hitachi, Ltd., Tokio/Tokyo Lichtempfindliches Gemisch, enthaltend eine Bisazidverbindung, und Verfahren zur Bildung von Mustern

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5388728A (en) * 1977-01-14 1978-08-04 Toshiba Corp Method of forming pattern
JPS5472976A (en) * 1977-11-22 1979-06-11 Fujitsu Ltd Pattern forming method
JPS5582437A (en) * 1978-12-15 1980-06-21 Fujitsu Ltd Method of making pattern
JPS5595945A (en) * 1979-01-12 1980-07-21 Nec Corp Production of negative type resist image
JPS55156941A (en) * 1979-05-24 1980-12-06 Tokyo Ohka Kogyo Co Ltd Micropattern forming method
JPS628777A (ja) * 1985-07-03 1987-01-16 株式会社　タカラ 変形玩具

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160128A (en) * 1981-03-30 1982-10-02 Hitachi Ltd Fine pattern forming method
JPS57204124A (en) * 1981-06-10 1982-12-14 Hitachi Ltd Forming method for minute pattern
JPS58203438A (ja) * 1982-05-24 1983-11-26 Hitachi Ltd 微細パタ−ン形成方法
JPH0411023B2 (ja) * 1983-12-23 1992-02-27
JPS60134236A (ja) * 1983-12-23 1985-07-17 Hitachi Ltd 微細パタ−ン形成法
JPS60170008A (ja) * 1984-02-15 1985-09-03 Hitachi Ltd 磁気ヘツド
JPS61156044A (ja) * 1984-12-27 1986-07-15 Nec Corp レジストステンシルマスクの製造方法
JPS61275747A (ja) * 1985-05-30 1986-12-05 Nec Corp ネガレジスト材料
JPH0584513B2 (ja) * 1985-05-30 1993-12-02 Nippon Electric Co
JPH0285857A (ja) * 1988-09-22 1990-03-27 Toshiba Corp 感光性樹脂組成物
JP2005316412A (ja) * 2004-03-31 2005-11-10 Nippon Zeon Co Ltd 感放射線性樹脂組成物
JP4513965B2 (ja) * 2004-03-31 2010-07-28 日本ゼオン株式会社 感放射線性樹脂組成物
KR101148454B1 (ko) 2004-03-31 2012-05-25 제온 코포레이션 감방사선성 수지 조성물
CN112992660A (zh) * 2021-05-10 2021-06-18 度亘激光技术（苏州）有限公司 半导体结构形成方法
CN112992660B (zh) * 2021-05-10 2021-08-03 度亘激光技术（苏州）有限公司 半导体结构形成方法

Also Published As

Publication number Publication date
DE3172722D1 (en) 1985-11-28
EP0045639A3 (en) 1982-08-04
US4536421A (en) 1985-08-20
EP0045639A2 (en) 1982-02-10
EP0045639B1 (en) 1985-10-23

Similar Documents

Publication Publication Date Title
JPS5730829A (en) Micropattern formation method
US20040265733A1 (en) Photoacid generators
MY100941A (en) A process of forming a negative patern in a photoresist layer.
US4614706A (en) Method of forming a microscopic pattern with far UV pattern exposure, alkaline solution development, and dry etching
JPS5569265A (en) Pattern-forming method
JPH0210350A (ja) ポジ型フォトレジスト
JPS5968737A (ja) ポジ型及びネガ型パタ−ンの同時形成方法
US4816377A (en) Photolithographic method producing sub-micron patterns in the manufacture of electronic microcircuits
JPS57202534A (en) Negative type resist composition
GB2079481A (en) Method for the formation of surface relief patterns using deep ultraviolet radiation exposure of resist composition
US4360585A (en) Method of etching polymethyl methacrylate
JP2000505913A (ja) ２，４―ジニトロ―１―ナフトールを含有するポジ型フォトレジスト組成物
US5238773A (en) Alkaline developable photoresist composition containing radiation sensitive organosilicon compound with quinone diazide terminal groups
JPS57202535A (en) Formation of negative resist pattern
JPH0343614B2 (ja)
JPS57183030A (en) Manufacture of semiconductor device
JPS6364772B2 (ja)
JPS58214149A (ja) 微細パタ−ン形成方法
JPS55134847A (en) Manufacture of resist image
Matsuzawa et al. Steep profile resist patterns through 1: 1 deep UV projection printing
JPS5781261A (en) Photoresist developing method
JPS5636134A (en) Forming method for pattern of semiconductor substrate
JPS5427367A (en) Manufacture of microwave circuit pattern
Itoh et al. A negative resist, LMR (low molecular weight resist), for deep UV lithography
JPS57160128A (en) Fine pattern forming method