JPS5472976A - Pattern forming method - Google Patents

Pattern forming method

Info

Publication number
JPS5472976A
JPS5472976A JP14094277A JP14094277A JPS5472976A JP S5472976 A JPS5472976 A JP S5472976A JP 14094277 A JP14094277 A JP 14094277A JP 14094277 A JP14094277 A JP 14094277A JP S5472976 A JPS5472976 A JP S5472976A
Authority
JP
Japan
Prior art keywords
resist
substrate
temperature
rays
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14094277A
Other languages
Japanese (ja)
Inventor
Fumio Yamagishi
Kiyoshi Ozawa
Yushi Inagaki
Yoshitaka Kitamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14094277A priority Critical patent/JPS5472976A/en
Publication of JPS5472976A publication Critical patent/JPS5472976A/en
Pending legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To simplify lift-off work by obtaining a pattern section spreading downward, by giving a difference in temperature between the upper layer and lower layer of a resist at te time of developing the exposed resist by using X rays or light.
CONSTITUTION: Resist 2 applied onto substrate 1 is exposed by X rays or light, and ten developed. At this time, the substrate 1 side is heated by hot air 5 from the heater while the resist 2 side is cooled by cool air 6, and developer 4 is supplied onto resist 2. In this way, when the temperature of the resist 2 surface is denoted by T1 and that of the interface between substrate 1 and resist 2 is by T2, temperature difference T2-T1 is set to about 5°C, so that pattern fusion part 3 in an inverted- trapezoid shape can be obtained with slanting angle θ spreading downward nearly equal to 70°. Then, the resist is lifted off after the fixed processes.
COPYRIGHT: (C)1979,JPO&Japio
JP14094277A 1977-11-22 1977-11-22 Pattern forming method Pending JPS5472976A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14094277A JPS5472976A (en) 1977-11-22 1977-11-22 Pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14094277A JPS5472976A (en) 1977-11-22 1977-11-22 Pattern forming method

Publications (1)

Publication Number Publication Date
JPS5472976A true JPS5472976A (en) 1979-06-11

Family

ID=15280391

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14094277A Pending JPS5472976A (en) 1977-11-22 1977-11-22 Pattern forming method

Country Status (1)

Country Link
JP (1) JPS5472976A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5730829A (en) * 1980-08-01 1982-02-19 Hitachi Ltd Micropattern formation method
CN113867104A (en) * 2021-09-01 2021-12-31 安徽光智科技有限公司 Preparation method of photoresist structure for Lift-off

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5730829A (en) * 1980-08-01 1982-02-19 Hitachi Ltd Micropattern formation method
CN113867104A (en) * 2021-09-01 2021-12-31 安徽光智科技有限公司 Preparation method of photoresist structure for Lift-off

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