JPS5491183A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5491183A JPS5491183A JP16069977A JP16069977A JPS5491183A JP S5491183 A JPS5491183 A JP S5491183A JP 16069977 A JP16069977 A JP 16069977A JP 16069977 A JP16069977 A JP 16069977A JP S5491183 A JPS5491183 A JP S5491183A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- substrate
- reverse face
- patterns
- glass plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 5
- 239000011521 glass Substances 0.000 abstract 3
Abstract
PURPOSE: To prevent the relative positional slippage between patterns on the surface and the reverse face by fixing a substrate, where a pattern is formed on the reverse face, onto a transparent glass plate larger than the substrate and forming a pattern on the surface while observing the pattern on the reverse face.
CONSTITUTION: Prescribed pattern 2 is formed on the reverse face of semiconductor subsrtrate 1, and photo resistor 4 is used to fix substrate 1 on transparent glass plate 3, which is vertically and horizontally larger than substrate 1, so that pattern 2 may be facedown. Next, photo resistor 5 is applied throughout the surface of glass plate 3 including substrate 1 and is developed by light exposure, thereby forming surface pattern 6. At this time, a two-sided mask positioning unit is used for mask positioning, and positioning is performed while observing relatively patterns 2 and 3 optically on a basis of reverseface pattern 2. Thus, the relative positional relation between two-sided patterns can be inspected very simply and non-destructively.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16069977A JPS576688B2 (en) | 1977-12-28 | 1977-12-28 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16069977A JPS576688B2 (en) | 1977-12-28 | 1977-12-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5491183A true JPS5491183A (en) | 1979-07-19 |
JPS576688B2 JPS576688B2 (en) | 1982-02-06 |
Family
ID=15720548
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16069977A Expired JPS576688B2 (en) | 1977-12-28 | 1977-12-28 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS576688B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62115164A (en) * | 1985-11-14 | 1987-05-26 | Hitachi Ltd | Method and device for forming pattern |
JP2009163237A (en) * | 2007-12-19 | 2009-07-23 | Asml Netherlands Bv | Lithographic method |
US20160299420A1 (en) * | 2015-04-13 | 2016-10-13 | Boe Technology Group Co., Ltd. | Mask, manufacturing method thereof and exposure apparatus |
-
1977
- 1977-12-28 JP JP16069977A patent/JPS576688B2/ja not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62115164A (en) * | 1985-11-14 | 1987-05-26 | Hitachi Ltd | Method and device for forming pattern |
JP2009163237A (en) * | 2007-12-19 | 2009-07-23 | Asml Netherlands Bv | Lithographic method |
US20160299420A1 (en) * | 2015-04-13 | 2016-10-13 | Boe Technology Group Co., Ltd. | Mask, manufacturing method thereof and exposure apparatus |
Also Published As
Publication number | Publication date |
---|---|
JPS576688B2 (en) | 1982-02-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5754317A (en) | Method and device for forming pattern | |
JPH04101412A (en) | Method of evaluating resist application | |
JPS5491183A (en) | Production of semiconductor device | |
JPS5341976A (en) | Measuring method of thickness of semiconducjtor wafer | |
JPS52117567A (en) | Electronic beam exposure unit | |
JPS53110379A (en) | Optical filter and its manufacture | |
JPH04239116A (en) | Manufacture of semiconductor device | |
JPH04171711A (en) | Resist formation method | |
JPS53121472A (en) | Exposure unit | |
JPS5967631A (en) | Method for wafer alignment | |
JPS5856333A (en) | Formation of key pattern for mask alignment | |
JPH0355865A (en) | Manufacture of semiconductor device | |
JPS51136287A (en) | Photo mask using non-crystalline carchognide glass thin film | |
JPH02127640A (en) | Reticle | |
JPS63166231A (en) | Manufacture of photo mask | |
JPS53144266A (en) | Forming method of photo resist film onto semiconductor substrate | |
JPS53112673A (en) | Mask alignment method in semiconductor device manufacturing process and photo mask used for its execution | |
JPS6236823A (en) | Resist pattern formation | |
JPH03229253A (en) | Reticle for reduction stepper | |
JPS63286810A (en) | Base plate exposing device | |
JPH03180017A (en) | Manufacture of semiconductor device | |
JPH01140145A (en) | Pattern forming method | |
JPH0321008A (en) | Manufacture of semiconductor device | |
JPS57101710A (en) | Method of measuring distorsion of projected image and exposing mask used therefore | |
JPH01111346A (en) | Wafer for inspection use and its manufacture |