JPS6410243A - Pattern forming method - Google Patents
Pattern forming methodInfo
- Publication number
- JPS6410243A JPS6410243A JP16575587A JP16575587A JPS6410243A JP S6410243 A JPS6410243 A JP S6410243A JP 16575587 A JP16575587 A JP 16575587A JP 16575587 A JP16575587 A JP 16575587A JP S6410243 A JPS6410243 A JP S6410243A
- Authority
- JP
- Japan
- Prior art keywords
- contrastenhanced
- layer
- resist
- forming method
- pattern forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To improve the gas permeability of a contrastenhanced film by applying a contrastenhanced material on a resist, followed by heating the formed film. CONSTITUTION:The resist 2 is applied on a substrate 1 of a semiconductor, etc., while rotating said substrate so as to have a thickness of 1.2mum. Next, the layer 3 of the contrastenhanced material is applied on the resist 2, and then, heated by a hot plate at 90 deg.C, for 2min, followed by selectively exposing said layer 3 through a mask 5 by means of a reducing projection exposure apparatus. At that time, a bubble does not generate at all, in the contrastenhanced layer 3. Thus, the gas permeability of said layer can be improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16575587A JPS6410243A (en) | 1987-07-02 | 1987-07-02 | Pattern forming method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16575587A JPS6410243A (en) | 1987-07-02 | 1987-07-02 | Pattern forming method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6410243A true JPS6410243A (en) | 1989-01-13 |
Family
ID=15818443
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16575587A Pending JPS6410243A (en) | 1987-07-02 | 1987-07-02 | Pattern forming method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6410243A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8080364B2 (en) | 2003-05-09 | 2011-12-20 | Panasonic Corporation | Pattern formation method |
-
1987
- 1987-07-02 JP JP16575587A patent/JPS6410243A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8080364B2 (en) | 2003-05-09 | 2011-12-20 | Panasonic Corporation | Pattern formation method |
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