JPS6423535A - Hardening of photoresist pattern - Google Patents

Hardening of photoresist pattern

Info

Publication number
JPS6423535A
JPS6423535A JP18027587A JP18027587A JPS6423535A JP S6423535 A JPS6423535 A JP S6423535A JP 18027587 A JP18027587 A JP 18027587A JP 18027587 A JP18027587 A JP 18027587A JP S6423535 A JPS6423535 A JP S6423535A
Authority
JP
Japan
Prior art keywords
substrate
film
photoresist pattern
temperature
polymer film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18027587A
Other languages
Japanese (ja)
Inventor
Toshiaki Tamamura
Akio Sugita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP18027587A priority Critical patent/JPS6423535A/en
Publication of JPS6423535A publication Critical patent/JPS6423535A/en
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE:To execute a thermal hardening operation without changing a shape of a photoresist pattern and to enhance the resistance to a treatment by a method wherein a high-polymer film whose glass transition temperature is higher than a heating temperature of a substrate is used. CONSTITUTION:A positive-type novolac photoresist film is coated on a substrate 11; after an exposure operation and a development operating, a positive-type novolac resist pattern 12 is formed. A high-polymer film 13 whose glass transition temperature is higher than a heating temperature of the substrate is coated on the substrate 11. As the high-polymer film to be used is preferably to have the following properties: a solvent to prepare a high-polymer solution does not affect a shape of the novolac photoresist pattern; the film has a glass transition temperature of higher than 150 deg.C; the film can be dissolved by the solvent and can be removed quickly after a long heating operation at a temperature of higher thin 150 deg.C. Then, the substrate 11 is heated at a prescribed temperature; the positive-type novolac photoresist pattern 12 on the substrate 11 is hardened; in succession, the high-polymer film 13 is dissolved by using the appropriate solvent and is removed.
JP18027587A 1987-07-20 1987-07-20 Hardening of photoresist pattern Pending JPS6423535A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18027587A JPS6423535A (en) 1987-07-20 1987-07-20 Hardening of photoresist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18027587A JPS6423535A (en) 1987-07-20 1987-07-20 Hardening of photoresist pattern

Publications (1)

Publication Number Publication Date
JPS6423535A true JPS6423535A (en) 1989-01-26

Family

ID=16080374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18027587A Pending JPS6423535A (en) 1987-07-20 1987-07-20 Hardening of photoresist pattern

Country Status (1)

Country Link
JP (1) JPS6423535A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8043798B2 (en) 2002-08-21 2011-10-25 Tokyo Ohka Kogyo Co., Ltd. Method of forming fine patterns
US8124318B2 (en) 2002-06-28 2012-02-28 Tokyo Ohka Kogyo Co., Ltd. Over-coating agent for forming fine patterns and a method of forming fine patterns using such agent
JP2012134353A (en) * 2010-12-22 2012-07-12 Toshiba Corp Pattern formation method and device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8124318B2 (en) 2002-06-28 2012-02-28 Tokyo Ohka Kogyo Co., Ltd. Over-coating agent for forming fine patterns and a method of forming fine patterns using such agent
US8043798B2 (en) 2002-08-21 2011-10-25 Tokyo Ohka Kogyo Co., Ltd. Method of forming fine patterns
JP2012134353A (en) * 2010-12-22 2012-07-12 Toshiba Corp Pattern formation method and device

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