JPS6423535A - Hardening of photoresist pattern - Google Patents
Hardening of photoresist patternInfo
- Publication number
- JPS6423535A JPS6423535A JP18027587A JP18027587A JPS6423535A JP S6423535 A JPS6423535 A JP S6423535A JP 18027587 A JP18027587 A JP 18027587A JP 18027587 A JP18027587 A JP 18027587A JP S6423535 A JPS6423535 A JP S6423535A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- photoresist pattern
- temperature
- polymer film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
PURPOSE:To execute a thermal hardening operation without changing a shape of a photoresist pattern and to enhance the resistance to a treatment by a method wherein a high-polymer film whose glass transition temperature is higher than a heating temperature of a substrate is used. CONSTITUTION:A positive-type novolac photoresist film is coated on a substrate 11; after an exposure operation and a development operating, a positive-type novolac resist pattern 12 is formed. A high-polymer film 13 whose glass transition temperature is higher than a heating temperature of the substrate is coated on the substrate 11. As the high-polymer film to be used is preferably to have the following properties: a solvent to prepare a high-polymer solution does not affect a shape of the novolac photoresist pattern; the film has a glass transition temperature of higher than 150 deg.C; the film can be dissolved by the solvent and can be removed quickly after a long heating operation at a temperature of higher thin 150 deg.C. Then, the substrate 11 is heated at a prescribed temperature; the positive-type novolac photoresist pattern 12 on the substrate 11 is hardened; in succession, the high-polymer film 13 is dissolved by using the appropriate solvent and is removed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18027587A JPS6423535A (en) | 1987-07-20 | 1987-07-20 | Hardening of photoresist pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18027587A JPS6423535A (en) | 1987-07-20 | 1987-07-20 | Hardening of photoresist pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6423535A true JPS6423535A (en) | 1989-01-26 |
Family
ID=16080374
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18027587A Pending JPS6423535A (en) | 1987-07-20 | 1987-07-20 | Hardening of photoresist pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6423535A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8043798B2 (en) | 2002-08-21 | 2011-10-25 | Tokyo Ohka Kogyo Co., Ltd. | Method of forming fine patterns |
US8124318B2 (en) | 2002-06-28 | 2012-02-28 | Tokyo Ohka Kogyo Co., Ltd. | Over-coating agent for forming fine patterns and a method of forming fine patterns using such agent |
JP2012134353A (en) * | 2010-12-22 | 2012-07-12 | Toshiba Corp | Pattern formation method and device |
-
1987
- 1987-07-20 JP JP18027587A patent/JPS6423535A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8124318B2 (en) | 2002-06-28 | 2012-02-28 | Tokyo Ohka Kogyo Co., Ltd. | Over-coating agent for forming fine patterns and a method of forming fine patterns using such agent |
US8043798B2 (en) | 2002-08-21 | 2011-10-25 | Tokyo Ohka Kogyo Co., Ltd. | Method of forming fine patterns |
JP2012134353A (en) * | 2010-12-22 | 2012-07-12 | Toshiba Corp | Pattern formation method and device |
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