JPS57160128A - Fine pattern forming method - Google Patents

Fine pattern forming method

Info

Publication number
JPS57160128A
JPS57160128A JP4555881A JP4555881A JPS57160128A JP S57160128 A JPS57160128 A JP S57160128A JP 4555881 A JP4555881 A JP 4555881A JP 4555881 A JP4555881 A JP 4555881A JP S57160128 A JPS57160128 A JP S57160128A
Authority
JP
Japan
Prior art keywords
photo resist
fine pattern
hydroxy group
pattern
resist film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4555881A
Other languages
Japanese (ja)
Inventor
Toshiharu Matsuzawa
Takao Iwayagi
Hiroshi Yanagisawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4555881A priority Critical patent/JPS57160128A/en
Publication of JPS57160128A publication Critical patent/JPS57160128A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To enhance a resolution of projecting exposure by using polymer having phenol hydroxy group for photo resist. CONSTITUTION:By using photo resist containing alkali soluble compound having phenol hydroxy group and aromatic acid compound, a photo resist film is formed on the material to form a fine pattern. Far-ultraviolet rays are irradiated to the desirable portion of the photo resist film through a projecting exposure method to lower a solubility for the irradiated portion. Subsequently, a developing process is provided with alkali solution to remove the irradiated portion of the photo resist film and a pattern is formed. A etching is provided by using the pattern for a mask to form a fine pattern. Phenol hydroxy group can absorb remarkably the rays of the wavelength shorter than 300mm., while a specific aromatic acid compound can improve a sensibility for the far-ultraviolet rays.
JP4555881A 1981-03-30 1981-03-30 Fine pattern forming method Pending JPS57160128A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4555881A JPS57160128A (en) 1981-03-30 1981-03-30 Fine pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4555881A JPS57160128A (en) 1981-03-30 1981-03-30 Fine pattern forming method

Publications (1)

Publication Number Publication Date
JPS57160128A true JPS57160128A (en) 1982-10-02

Family

ID=12722684

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4555881A Pending JPS57160128A (en) 1981-03-30 1981-03-30 Fine pattern forming method

Country Status (1)

Country Link
JP (1) JPS57160128A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53130747A (en) * 1977-04-20 1978-11-15 Oji Paper Co Photosensitine composition
JPS5677843A (en) * 1979-11-30 1981-06-26 Fujitsu Ltd Resist pattern forming method
JPS5730829A (en) * 1980-08-01 1982-02-19 Hitachi Ltd Micropattern formation method
JPS5770530A (en) * 1980-10-20 1982-05-01 Tokyo Ohka Kogyo Co Ltd Resist material for forming fine pattern
JPS628777A (en) * 1985-07-03 1987-01-16 株式会社　タカラ Deformable toy

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53130747A (en) * 1977-04-20 1978-11-15 Oji Paper Co Photosensitine composition
JPS5677843A (en) * 1979-11-30 1981-06-26 Fujitsu Ltd Resist pattern forming method
JPS5730829A (en) * 1980-08-01 1982-02-19 Hitachi Ltd Micropattern formation method
JPS5770530A (en) * 1980-10-20 1982-05-01 Tokyo Ohka Kogyo Co Ltd Resist material for forming fine pattern
JPS628777A (en) * 1985-07-03 1987-01-16 株式会社　タカラ Deformable toy

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