JPS57162330A - Dry formation of pattern or dry removal of resist pattern - Google Patents

Dry formation of pattern or dry removal of resist pattern

Info

Publication number
JPS57162330A
JPS57162330A JP4631881A JP4631881A JPS57162330A JP S57162330 A JPS57162330 A JP S57162330A JP 4631881 A JP4631881 A JP 4631881A JP 4631881 A JP4631881 A JP 4631881A JP S57162330 A JPS57162330 A JP S57162330A
Authority
JP
Japan
Prior art keywords
polymer
pattern
dry
emitted
ultraviolet ray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4631881A
Other languages
Japanese (ja)
Inventor
Kazuyuki Sugita
Nobuo Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP4631881A priority Critical patent/JPS57162330A/en
Publication of JPS57162330A publication Critical patent/JPS57162330A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To enable dry formation of a pattern of thin polymer film without development by emitting specific far ultraviolet ray to the exposure of the prescribed amount on the surface of the thin film formed of decomposition, collapse or depolymerization type polymer. CONSTITUTION:Light containing far ultraviolet ray of 270nm or shorter wavelength is emitted to a picture in the exposure of at least 1J/cm<2> of far ultraviolet ray is emitted to the surface of a thin film formed of decomposition, collapse of depolymerization type polymer. This film is then heated to the temperature lower than the softening point of the polymer during or after the emission, as required, thereby selectively decomposing or volatilizing only the polymer of emitted art of the surface of the thin film. Thus, the polymer of exposed part is removed without development, thereby forming a desired pattern of dry formation.
JP4631881A 1981-03-31 1981-03-31 Dry formation of pattern or dry removal of resist pattern Pending JPS57162330A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4631881A JPS57162330A (en) 1981-03-31 1981-03-31 Dry formation of pattern or dry removal of resist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4631881A JPS57162330A (en) 1981-03-31 1981-03-31 Dry formation of pattern or dry removal of resist pattern

Publications (1)

Publication Number Publication Date
JPS57162330A true JPS57162330A (en) 1982-10-06

Family

ID=12743808

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4631881A Pending JPS57162330A (en) 1981-03-31 1981-03-31 Dry formation of pattern or dry removal of resist pattern

Country Status (1)

Country Link
JP (1) JPS57162330A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60211939A (en) * 1984-04-06 1985-10-24 Nippon Telegr & Teleph Corp <Ntt> Formation of microscopic pattern
JPS6272127A (en) * 1985-09-25 1987-04-02 Fujitsu Ltd Formation of pattern
JP2014216477A (en) * 2013-04-25 2014-11-17 株式会社デンソー Organic semiconductor device manufacturing method
WO2024150799A1 (en) * 2023-01-12 2024-07-18 ダイキン工業株式会社 Composite material

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5218175A (en) * 1975-08-01 1977-02-10 Hitachi Ltd Circuit pattern formation method and its device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5218175A (en) * 1975-08-01 1977-02-10 Hitachi Ltd Circuit pattern formation method and its device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60211939A (en) * 1984-04-06 1985-10-24 Nippon Telegr & Teleph Corp <Ntt> Formation of microscopic pattern
JPH0475647B2 (en) * 1984-04-06 1992-12-01 Nippon Telegraph & Telephone
JPS6272127A (en) * 1985-09-25 1987-04-02 Fujitsu Ltd Formation of pattern
JPH0239086B2 (en) * 1985-09-25 1990-09-04 Fujitsu Ltd
JP2014216477A (en) * 2013-04-25 2014-11-17 株式会社デンソー Organic semiconductor device manufacturing method
WO2024150799A1 (en) * 2023-01-12 2024-07-18 ダイキン工業株式会社 Composite material

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