JPS57204124A - Forming method for minute pattern - Google Patents
Forming method for minute patternInfo
- Publication number
- JPS57204124A JPS57204124A JP56088154A JP8815481A JPS57204124A JP S57204124 A JPS57204124 A JP S57204124A JP 56088154 A JP56088154 A JP 56088154A JP 8815481 A JP8815481 A JP 8815481A JP S57204124 A JPS57204124 A JP S57204124A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- approximately
- film
- photo
- sectional shape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/008—Azides
- G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
- G03F7/0125—Macromolecular azides; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the macromolecular azides
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To form an evaporating film pattern utilizing lift-off with high accuracy by forming a mask, sectional shape thereof is an inverted trapezoid, by using a photo-resist film with phenolic hydroxyl groups. CONSTITUTION:The photo-resist film 25 with the phenolic hydroxyl groups formed in a manner, etc. that phenol, approximately 20g m-cresol copolymerization type novolac resin and approximately 4g 4-azide calcon are dissolved into approximately 80g methylcellosolve acetate is shaped onto a substrate 21, and exposed and developed up to a predetermined pattern by using the beams of 300-450nm, thus forming the pattern, the sectional shape thereof is the inverted trapezoid. A Pb alloy film 24 is evaporated onto the whole surface, and the Pb alloy pattern is molded through a lift-off method. Accordingly, the minute pattern proper to a Josephson logic element can be formed in excellent accuracy and reproducibility.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56088154A JPS57204124A (en) | 1981-06-10 | 1981-06-10 | Forming method for minute pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56088154A JPS57204124A (en) | 1981-06-10 | 1981-06-10 | Forming method for minute pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57204124A true JPS57204124A (en) | 1982-12-14 |
Family
ID=13935003
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56088154A Pending JPS57204124A (en) | 1981-06-10 | 1981-06-10 | Forming method for minute pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57204124A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4904619A (en) * | 1987-03-24 | 1990-02-27 | Hitachi Ltd. | Method of forming Josephson junction devices |
CN111279497A (en) * | 2017-11-07 | 2020-06-12 | 国际商业机器公司 | Shadow mask area correction for tunnel junctions |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5388728A (en) * | 1977-01-14 | 1978-08-04 | Toshiba Corp | Method of forming pattern |
JPS53130747A (en) * | 1977-04-20 | 1978-11-15 | Oji Paper Co | Photosensitine composition |
JPS5572976A (en) * | 1978-11-25 | 1980-06-02 | Sekisui Chemical Co Ltd | Pipe with receiving port and manufacture thereof |
JPS5730829A (en) * | 1980-08-01 | 1982-02-19 | Hitachi Ltd | Micropattern formation method |
-
1981
- 1981-06-10 JP JP56088154A patent/JPS57204124A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5388728A (en) * | 1977-01-14 | 1978-08-04 | Toshiba Corp | Method of forming pattern |
JPS53130747A (en) * | 1977-04-20 | 1978-11-15 | Oji Paper Co | Photosensitine composition |
JPS5572976A (en) * | 1978-11-25 | 1980-06-02 | Sekisui Chemical Co Ltd | Pipe with receiving port and manufacture thereof |
JPS5730829A (en) * | 1980-08-01 | 1982-02-19 | Hitachi Ltd | Micropattern formation method |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4904619A (en) * | 1987-03-24 | 1990-02-27 | Hitachi Ltd. | Method of forming Josephson junction devices |
CN111279497A (en) * | 2017-11-07 | 2020-06-12 | 国际商业机器公司 | Shadow mask area correction for tunnel junctions |
JP2021503171A (en) * | 2017-11-07 | 2021-02-04 | インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation | A method for correcting the overlapping area between two films produced by sequential shadow mask deposition and a method for forming a bond. |
CN111279497B (en) * | 2017-11-07 | 2023-12-26 | 国际商业机器公司 | Shadow mask area correction for tunnel junctions |
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