JPS57204124A - Forming method for minute pattern - Google Patents

Forming method for minute pattern

Info

Publication number
JPS57204124A
JPS57204124A JP56088154A JP8815481A JPS57204124A JP S57204124 A JPS57204124 A JP S57204124A JP 56088154 A JP56088154 A JP 56088154A JP 8815481 A JP8815481 A JP 8815481A JP S57204124 A JPS57204124 A JP S57204124A
Authority
JP
Japan
Prior art keywords
pattern
approximately
film
photo
sectional shape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56088154A
Other languages
Japanese (ja)
Inventor
Koji Yamada
Toshiharu Matsuzawa
Takao Iwayagi
Junji Shigeta
Mikio Hirano
Shinichiro Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56088154A priority Critical patent/JPS57204124A/en
Publication of JPS57204124A publication Critical patent/JPS57204124A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/008—Azides
    • G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
    • G03F7/0125—Macromolecular azides; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the macromolecular azides

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To form an evaporating film pattern utilizing lift-off with high accuracy by forming a mask, sectional shape thereof is an inverted trapezoid, by using a photo-resist film with phenolic hydroxyl groups. CONSTITUTION:The photo-resist film 25 with the phenolic hydroxyl groups formed in a manner, etc. that phenol, approximately 20g m-cresol copolymerization type novolac resin and approximately 4g 4-azide calcon are dissolved into approximately 80g methylcellosolve acetate is shaped onto a substrate 21, and exposed and developed up to a predetermined pattern by using the beams of 300-450nm, thus forming the pattern, the sectional shape thereof is the inverted trapezoid. A Pb alloy film 24 is evaporated onto the whole surface, and the Pb alloy pattern is molded through a lift-off method. Accordingly, the minute pattern proper to a Josephson logic element can be formed in excellent accuracy and reproducibility.
JP56088154A 1981-06-10 1981-06-10 Forming method for minute pattern Pending JPS57204124A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56088154A JPS57204124A (en) 1981-06-10 1981-06-10 Forming method for minute pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56088154A JPS57204124A (en) 1981-06-10 1981-06-10 Forming method for minute pattern

Publications (1)

Publication Number Publication Date
JPS57204124A true JPS57204124A (en) 1982-12-14

Family

ID=13935003

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56088154A Pending JPS57204124A (en) 1981-06-10 1981-06-10 Forming method for minute pattern

Country Status (1)

Country Link
JP (1) JPS57204124A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4904619A (en) * 1987-03-24 1990-02-27 Hitachi Ltd. Method of forming Josephson junction devices
CN111279497A (en) * 2017-11-07 2020-06-12 国际商业机器公司 Shadow mask area correction for tunnel junctions

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5388728A (en) * 1977-01-14 1978-08-04 Toshiba Corp Method of forming pattern
JPS53130747A (en) * 1977-04-20 1978-11-15 Oji Paper Co Photosensitine composition
JPS5572976A (en) * 1978-11-25 1980-06-02 Sekisui Chemical Co Ltd Pipe with receiving port and manufacture thereof
JPS5730829A (en) * 1980-08-01 1982-02-19 Hitachi Ltd Micropattern formation method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5388728A (en) * 1977-01-14 1978-08-04 Toshiba Corp Method of forming pattern
JPS53130747A (en) * 1977-04-20 1978-11-15 Oji Paper Co Photosensitine composition
JPS5572976A (en) * 1978-11-25 1980-06-02 Sekisui Chemical Co Ltd Pipe with receiving port and manufacture thereof
JPS5730829A (en) * 1980-08-01 1982-02-19 Hitachi Ltd Micropattern formation method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4904619A (en) * 1987-03-24 1990-02-27 Hitachi Ltd. Method of forming Josephson junction devices
CN111279497A (en) * 2017-11-07 2020-06-12 国际商业机器公司 Shadow mask area correction for tunnel junctions
JP2021503171A (en) * 2017-11-07 2021-02-04 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ A method for correcting the overlapping area between two films produced by sequential shadow mask deposition and a method for forming a bond.
CN111279497B (en) * 2017-11-07 2023-12-26 国际商业机器公司 Shadow mask area correction for tunnel junctions

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