JPS56155535A - Film forming device utilizing plasma - Google Patents

Film forming device utilizing plasma

Info

Publication number
JPS56155535A
JPS56155535A JP5787780A JP5787780A JPS56155535A JP S56155535 A JPS56155535 A JP S56155535A JP 5787780 A JP5787780 A JP 5787780A JP 5787780 A JP5787780 A JP 5787780A JP S56155535 A JPS56155535 A JP S56155535A
Authority
JP
Japan
Prior art keywords
plasma
generating chamber
chamber
generated
generating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5787780A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6243335B2 (enrdf_load_stackoverflow
Inventor
Seitaro Matsuo
Hideo Yoshihara
Shinichi Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP5787780A priority Critical patent/JPS56155535A/ja
Priority to CA000375908A priority patent/CA1159012A/en
Priority to US06/257,616 priority patent/US4401054A/en
Priority to DE3117252A priority patent/DE3117252C2/de
Priority to FR8108726A priority patent/FR2481838A1/fr
Priority to GB8113505A priority patent/GB2076587B/en
Priority to NL8102172A priority patent/NL191267C/xx
Publication of JPS56155535A publication Critical patent/JPS56155535A/ja
Publication of JPS6243335B2 publication Critical patent/JPS6243335B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP5787780A 1980-05-02 1980-05-02 Film forming device utilizing plasma Granted JPS56155535A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP5787780A JPS56155535A (en) 1980-05-02 1980-05-02 Film forming device utilizing plasma
CA000375908A CA1159012A (en) 1980-05-02 1981-04-22 Plasma deposition apparatus
US06/257,616 US4401054A (en) 1980-05-02 1981-04-27 Plasma deposition apparatus
DE3117252A DE3117252C2 (de) 1980-05-02 1981-04-30 Plasmaauftragvorrichtung
FR8108726A FR2481838A1 (fr) 1980-05-02 1981-04-30 Appareil de depot de plasma pour former une pellicule sur un substrat
GB8113505A GB2076587B (en) 1980-05-02 1981-05-01 Plasma deposition apparatus
NL8102172A NL191267C (nl) 1980-05-02 1981-05-01 Inrichting voor het met plasma bewerken van een substraat.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5787780A JPS56155535A (en) 1980-05-02 1980-05-02 Film forming device utilizing plasma

Publications (2)

Publication Number Publication Date
JPS56155535A true JPS56155535A (en) 1981-12-01
JPS6243335B2 JPS6243335B2 (enrdf_load_stackoverflow) 1987-09-12

Family

ID=13068205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5787780A Granted JPS56155535A (en) 1980-05-02 1980-05-02 Film forming device utilizing plasma

Country Status (1)

Country Link
JP (1) JPS56155535A (enrdf_load_stackoverflow)

Cited By (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58106821A (ja) * 1981-12-18 1983-06-25 Fujitsu Ltd 導電配線層の形成方法
JPS593018A (ja) * 1982-06-25 1984-01-09 Hitachi Ltd プラズマデポジシヨンによるシリコン系膜の製造方法
JPS5947733A (ja) * 1982-09-13 1984-03-17 Hitachi Ltd プラズマプロセス方法および装置
JPS60116781A (ja) * 1983-11-28 1985-06-24 Kyocera Corp 高硬度窒化ホウ素膜の製造方法
JPS60116780A (ja) * 1983-11-28 1985-06-24 Kyocera Corp 高硬度窒化ホウ素膜の製造方法
JPS60120525A (ja) * 1983-12-02 1985-06-28 Nippon Telegr & Teleph Corp <Ntt> 反応性イオンエツチング方法
JPS6147628A (ja) * 1984-08-13 1986-03-08 Nippon Telegr & Teleph Corp <Ntt> 半導体薄膜形成法
JPS6153719A (ja) * 1984-08-24 1986-03-17 Nippon Telegr & Teleph Corp <Ntt> 半導体結晶性膜製造装置
JPS61218134A (ja) * 1985-03-23 1986-09-27 Nippon Telegr & Teleph Corp <Ntt> 薄膜形成装置および薄膜形成方法
JPS61267324A (ja) * 1985-05-21 1986-11-26 Fuji Electric Co Ltd 乾式薄膜加工装置
JPS61281872A (ja) * 1985-06-07 1986-12-12 Matsushita Electric Ind Co Ltd 非晶質シリコンゲルマニウム膜の形成方法
JPS627859A (ja) * 1985-07-05 1987-01-14 Hitachi Ltd アモルフアスシリコン膜の形成方法
JPS6289875A (ja) * 1985-10-14 1987-04-24 Semiconductor Energy Lab Co Ltd 薄膜形成装置
JPS6289882A (ja) * 1985-10-14 1987-04-24 Semiconductor Energy Lab Co Ltd 気相エツチング方法
JPS62116774A (ja) * 1985-11-15 1987-05-28 Canon Inc 成膜装置
JPS62150726A (ja) * 1985-12-24 1987-07-04 Fuji Electric Co Ltd 半導体装置の製造方法
JPS62172714A (ja) * 1986-01-25 1987-07-29 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体薄膜の製造方法
JPS62174382A (ja) * 1986-01-27 1987-07-31 Shindengen Electric Mfg Co Ltd 気相より金属合金を堆積させる方法および装置
JPS62229823A (ja) * 1986-03-29 1987-10-08 Nippon Telegr & Teleph Corp <Ntt> 不純物添加化合物半導体結晶の成長方法
JPS6333575A (ja) * 1986-07-28 1988-02-13 Nippon Soken Inc 電子サイクロトロンプラズマｃｖｄ装置
JPS6343324A (ja) * 1986-08-09 1988-02-24 Anelva Corp プラズマシヤワ−装置
JPS6350028A (ja) * 1986-08-20 1988-03-02 Fujitsu Ltd 薄膜形成方法
JPS6369221A (ja) * 1986-09-10 1988-03-29 Fujitsu Ltd エピタキシヤル成長装置
JPS6383273A (ja) * 1986-09-26 1988-04-13 Res Dev Corp Of Japan 窒化ホウ素膜の合成方法
JPS63217620A (ja) * 1987-03-06 1988-09-09 Hitachi Ltd プラズマ処理装置
JPS63221623A (ja) * 1987-03-10 1988-09-14 Fujitsu Ltd 乾式薄膜加工装置
JPS63286579A (ja) * 1987-05-19 1988-11-24 Raimuzu:Kk 薄膜の形成方法
JPS6450574A (en) * 1987-08-21 1989-02-27 Matsushita Electric Ind Co Ltd Manufacture of hetero-junction element
JPS6456874A (en) * 1987-03-27 1989-03-03 Canon Kk Microwave plasma cvd device
US4876983A (en) * 1987-01-19 1989-10-31 Hitachi, Ltd. Plasma operation apparatus
DE3921844A1 (de) * 1988-07-05 1990-01-11 Mitsubishi Electric Corp Vorrichtung zur behandlung von halbleiterwafern
JPH0252422A (ja) * 1988-08-17 1990-02-22 Nippon Telegr & Teleph Corp <Ntt> 薄膜製造方法及び装置
JPH0273977A (ja) * 1988-09-09 1990-03-13 Sony Corp プラズマ装置
JPH0368773A (ja) * 1989-06-13 1991-03-25 Plasma & Materials Technol Inc 高密度プラズマ蒸着およびエッチング装置
US5013401A (en) * 1989-03-27 1991-05-07 Nec Corporation Microwave plasma etching method and apparatus
US5016564A (en) * 1986-12-29 1991-05-21 Sumitomo Metal Industries Ltd. Plasma apparatus
JPH03232224A (ja) * 1990-02-07 1991-10-16 Mitsubishi Electric Corp プラズマ処理装置
JPH0460556U (enrdf_load_stackoverflow) * 1990-10-03 1992-05-25
JPH05251356A (ja) * 1991-11-06 1993-09-28 Semiconductor Energy Lab Co Ltd 被膜形成方法
JPH05347260A (ja) * 1993-02-19 1993-12-27 Hitachi Ltd プラズマ処理装置
US5366586A (en) * 1992-02-03 1994-11-22 Nec Corporation Plasma formation using electron cyclotron resonance and method for processing substrate by using the same
US5401351A (en) * 1993-01-27 1995-03-28 Nec Corporation Radio frequency electron cyclotron resonance plasma etching apparatus
JPH07161700A (ja) * 1994-07-11 1995-06-23 Hitachi Ltd プラズマ処理方法
JPH07166361A (ja) * 1994-07-11 1995-06-27 Hitachi Ltd プラズマ処理方法
US5433788A (en) * 1987-01-19 1995-07-18 Hitachi, Ltd. Apparatus for plasma treatment using electron cyclotron resonance
JPH07263363A (ja) * 1994-11-28 1995-10-13 Matsushita Electric Ind Co Ltd 薄膜形成方法及びエッチング方法
US5468341A (en) * 1993-12-28 1995-11-21 Nec Corporation Plasma-etching method and apparatus therefor
JPH09137275A (ja) * 1996-11-08 1997-05-27 Semiconductor Energy Lab Co Ltd プラズマｃｖｄ装置
US5827435A (en) * 1994-10-27 1998-10-27 Nec Corporation Plasma processing method and equipment used therefor
US5976259A (en) * 1985-02-14 1999-11-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method, and system
US6372304B1 (en) 1996-07-10 2002-04-16 Suzuki Motor Corporation Method and apparatus for forming SiC thin film on high polymer base material by plasma CVD
US6677001B1 (en) 1986-11-10 2004-01-13 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD method and apparatus

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509545A (enrdf_load_stackoverflow) * 1973-05-31 1975-01-31
JPS5132508A (ja) * 1974-09-07 1976-03-19 Kaneo Ishii Echirengurikooruekinogansuibunrisochi
JPS5171597A (enrdf_load_stackoverflow) * 1974-12-18 1976-06-21 Hitachi Ltd
JPS5244174A (en) * 1975-10-06 1977-04-06 Hitachi Ltd Plasma treatment device
JPS5325367A (en) * 1976-08-23 1978-03-09 Hitachi Ltd Plasma tr eating method and apparatus
JPS53110378A (en) * 1977-03-09 1978-09-27 Hitachi Ltd Plasma carrying device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509545A (enrdf_load_stackoverflow) * 1973-05-31 1975-01-31
JPS5132508A (ja) * 1974-09-07 1976-03-19 Kaneo Ishii Echirengurikooruekinogansuibunrisochi
JPS5171597A (enrdf_load_stackoverflow) * 1974-12-18 1976-06-21 Hitachi Ltd
JPS5244174A (en) * 1975-10-06 1977-04-06 Hitachi Ltd Plasma treatment device
JPS5325367A (en) * 1976-08-23 1978-03-09 Hitachi Ltd Plasma tr eating method and apparatus
JPS53110378A (en) * 1977-03-09 1978-09-27 Hitachi Ltd Plasma carrying device

Cited By (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58106821A (ja) * 1981-12-18 1983-06-25 Fujitsu Ltd 導電配線層の形成方法
JPS593018A (ja) * 1982-06-25 1984-01-09 Hitachi Ltd プラズマデポジシヨンによるシリコン系膜の製造方法
JPS5947733A (ja) * 1982-09-13 1984-03-17 Hitachi Ltd プラズマプロセス方法および装置
JPS60116781A (ja) * 1983-11-28 1985-06-24 Kyocera Corp 高硬度窒化ホウ素膜の製造方法
JPS60116780A (ja) * 1983-11-28 1985-06-24 Kyocera Corp 高硬度窒化ホウ素膜の製造方法
JPS60120525A (ja) * 1983-12-02 1985-06-28 Nippon Telegr & Teleph Corp <Ntt> 反応性イオンエツチング方法
JPS6147628A (ja) * 1984-08-13 1986-03-08 Nippon Telegr & Teleph Corp <Ntt> 半導体薄膜形成法
JPS6153719A (ja) * 1984-08-24 1986-03-17 Nippon Telegr & Teleph Corp <Ntt> 半導体結晶性膜製造装置
US5976259A (en) * 1985-02-14 1999-11-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method, and system
US6113701A (en) * 1985-02-14 2000-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method, and system
JPS61218134A (ja) * 1985-03-23 1986-09-27 Nippon Telegr & Teleph Corp <Ntt> 薄膜形成装置および薄膜形成方法
JPS61267324A (ja) * 1985-05-21 1986-11-26 Fuji Electric Co Ltd 乾式薄膜加工装置
JPS61281872A (ja) * 1985-06-07 1986-12-12 Matsushita Electric Ind Co Ltd 非晶質シリコンゲルマニウム膜の形成方法
JPS627859A (ja) * 1985-07-05 1987-01-14 Hitachi Ltd アモルフアスシリコン膜の形成方法
JPS6289875A (ja) * 1985-10-14 1987-04-24 Semiconductor Energy Lab Co Ltd 薄膜形成装置
JPS6289882A (ja) * 1985-10-14 1987-04-24 Semiconductor Energy Lab Co Ltd 気相エツチング方法
JPS62116774A (ja) * 1985-11-15 1987-05-28 Canon Inc 成膜装置
JPS62150726A (ja) * 1985-12-24 1987-07-04 Fuji Electric Co Ltd 半導体装置の製造方法
JPS62172714A (ja) * 1986-01-25 1987-07-29 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体薄膜の製造方法
JPS62174382A (ja) * 1986-01-27 1987-07-31 Shindengen Electric Mfg Co Ltd 気相より金属合金を堆積させる方法および装置
JPS62229823A (ja) * 1986-03-29 1987-10-08 Nippon Telegr & Teleph Corp <Ntt> 不純物添加化合物半導体結晶の成長方法
JPS6333575A (ja) * 1986-07-28 1988-02-13 Nippon Soken Inc 電子サイクロトロンプラズマｃｖｄ装置
JPS6343324A (ja) * 1986-08-09 1988-02-24 Anelva Corp プラズマシヤワ−装置
JPS6350028A (ja) * 1986-08-20 1988-03-02 Fujitsu Ltd 薄膜形成方法
JPS6369221A (ja) * 1986-09-10 1988-03-29 Fujitsu Ltd エピタキシヤル成長装置
JPS6383273A (ja) * 1986-09-26 1988-04-13 Res Dev Corp Of Japan 窒化ホウ素膜の合成方法
US6677001B1 (en) 1986-11-10 2004-01-13 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD method and apparatus
US5016564A (en) * 1986-12-29 1991-05-21 Sumitomo Metal Industries Ltd. Plasma apparatus
US5019117A (en) * 1986-12-29 1991-05-28 Sumitomo Metal Industries Ltd. Plasma apparatus
US4876983A (en) * 1987-01-19 1989-10-31 Hitachi, Ltd. Plasma operation apparatus
US5433788A (en) * 1987-01-19 1995-07-18 Hitachi, Ltd. Apparatus for plasma treatment using electron cyclotron resonance
JPS63217620A (ja) * 1987-03-06 1988-09-09 Hitachi Ltd プラズマ処理装置
JPS63221623A (ja) * 1987-03-10 1988-09-14 Fujitsu Ltd 乾式薄膜加工装置
JPS6456874A (en) * 1987-03-27 1989-03-03 Canon Kk Microwave plasma cvd device
JPS63286579A (ja) * 1987-05-19 1988-11-24 Raimuzu:Kk 薄膜の形成方法
JPS6450574A (en) * 1987-08-21 1989-02-27 Matsushita Electric Ind Co Ltd Manufacture of hetero-junction element
DE3921844A1 (de) * 1988-07-05 1990-01-11 Mitsubishi Electric Corp Vorrichtung zur behandlung von halbleiterwafern
JPH0252422A (ja) * 1988-08-17 1990-02-22 Nippon Telegr & Teleph Corp <Ntt> 薄膜製造方法及び装置
JPH0273977A (ja) * 1988-09-09 1990-03-13 Sony Corp プラズマ装置
US5013401A (en) * 1989-03-27 1991-05-07 Nec Corporation Microwave plasma etching method and apparatus
JPH0368773A (ja) * 1989-06-13 1991-03-25 Plasma & Materials Technol Inc 高密度プラズマ蒸着およびエッチング装置
JPH03232224A (ja) * 1990-02-07 1991-10-16 Mitsubishi Electric Corp プラズマ処理装置
JPH0460556U (enrdf_load_stackoverflow) * 1990-10-03 1992-05-25
JPH05251356A (ja) * 1991-11-06 1993-09-28 Semiconductor Energy Lab Co Ltd 被膜形成方法
US5366586A (en) * 1992-02-03 1994-11-22 Nec Corporation Plasma formation using electron cyclotron resonance and method for processing substrate by using the same
US5401351A (en) * 1993-01-27 1995-03-28 Nec Corporation Radio frequency electron cyclotron resonance plasma etching apparatus
JPH05347260A (ja) * 1993-02-19 1993-12-27 Hitachi Ltd プラズマ処理装置
US5468341A (en) * 1993-12-28 1995-11-21 Nec Corporation Plasma-etching method and apparatus therefor
JPH07166361A (ja) * 1994-07-11 1995-06-27 Hitachi Ltd プラズマ処理方法
JPH07161700A (ja) * 1994-07-11 1995-06-23 Hitachi Ltd プラズマ処理方法
US5827435A (en) * 1994-10-27 1998-10-27 Nec Corporation Plasma processing method and equipment used therefor
JPH07263363A (ja) * 1994-11-28 1995-10-13 Matsushita Electric Ind Co Ltd 薄膜形成方法及びエッチング方法
US6372304B1 (en) 1996-07-10 2002-04-16 Suzuki Motor Corporation Method and apparatus for forming SiC thin film on high polymer base material by plasma CVD
JPH09137275A (ja) * 1996-11-08 1997-05-27 Semiconductor Energy Lab Co Ltd プラズマｃｖｄ装置

Also Published As

Publication number Publication date
JPS6243335B2 (enrdf_load_stackoverflow) 1987-09-12

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