JPS6450574A - Manufacture of hetero-junction element - Google Patents

Manufacture of hetero-junction element

Info

Publication number
JPS6450574A
JPS6450574A JP62208656A JP20865687A JPS6450574A JP S6450574 A JPS6450574 A JP S6450574A JP 62208656 A JP62208656 A JP 62208656A JP 20865687 A JP20865687 A JP 20865687A JP S6450574 A JPS6450574 A JP S6450574A
Authority
JP
Japan
Prior art keywords
semiconductor layer
amorphous semiconductor
manufacture
single crystal
plasma cvd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62208656A
Other languages
Japanese (ja)
Other versions
JP2644764B2 (en
Inventor
Masatoshi Kitagawa
Ryuma Hirano
Yoshio Mito
Takashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62208656A priority Critical patent/JP2644764B2/en
Publication of JPS6450574A publication Critical patent/JPS6450574A/en
Application granted granted Critical
Publication of JP2644764B2 publication Critical patent/JP2644764B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

PURPOSE:To manufacture a leakage current reduced element simultaneously improving the productivity by a method wherein an amorphous semiconductor layer is formed by a plasma CVD process using microwave electron cyclotron resonance absorption. CONSTITUTION:An amorphous semiconductor layer 12 exceeding one layer is laminated on a single crystal silicon substrate 11 while the first electrode layer 13 in contact with the single crystal silicon 11 and the second electrode layer 14 in contact with the amorphous semiconductor layer 12 are successively laminated. Within the hetero junction element in such a constitution, said amorphous semiconductor layer 12 is formed by a plasma CVD process using the microwave electron cyclotron resonance absorption. For example, the amorphous silicon film 12 is in around 500Angstrom -1mum is formed on the single crystal silicon substrate 11 using SiH4 as material gas at the substrate temperature of 200 deg.C preferably 100 deg.C using an ECR plasma CVD process as shown in the figure. Later, the first and the second metallic electrodes 13, 14 are formed by vacuum evaporation of metal such as Al etc., to manufacture the title hetero junction element.
JP62208656A 1987-08-21 1987-08-21 Method for manufacturing heterojunction device Expired - Fee Related JP2644764B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62208656A JP2644764B2 (en) 1987-08-21 1987-08-21 Method for manufacturing heterojunction device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62208656A JP2644764B2 (en) 1987-08-21 1987-08-21 Method for manufacturing heterojunction device

Publications (2)

Publication Number Publication Date
JPS6450574A true JPS6450574A (en) 1989-02-27
JP2644764B2 JP2644764B2 (en) 1997-08-25

Family

ID=16559865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62208656A Expired - Fee Related JP2644764B2 (en) 1987-08-21 1987-08-21 Method for manufacturing heterojunction device

Country Status (1)

Country Link
JP (1) JP2644764B2 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56155535A (en) * 1980-05-02 1981-12-01 Nippon Telegr & Teleph Corp <Ntt> Film forming device utilizing plasma
JPS5760875A (en) * 1980-09-25 1982-04-13 Sharp Corp Photoelectric conversion element
JPS58125820A (en) * 1982-01-22 1983-07-27 Toshiba Corp Electronic cyclotron resonance type discharger
JPS60117711A (en) * 1983-11-30 1985-06-25 Toshiba Corp Forming apparatus of thin film
JPS62118520A (en) * 1985-11-18 1987-05-29 Semiconductor Energy Lab Co Ltd Film formation by electronic cyclotron resonance

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56155535A (en) * 1980-05-02 1981-12-01 Nippon Telegr & Teleph Corp <Ntt> Film forming device utilizing plasma
JPS5760875A (en) * 1980-09-25 1982-04-13 Sharp Corp Photoelectric conversion element
JPS58125820A (en) * 1982-01-22 1983-07-27 Toshiba Corp Electronic cyclotron resonance type discharger
JPS60117711A (en) * 1983-11-30 1985-06-25 Toshiba Corp Forming apparatus of thin film
JPS62118520A (en) * 1985-11-18 1987-05-29 Semiconductor Energy Lab Co Ltd Film formation by electronic cyclotron resonance

Also Published As

Publication number Publication date
JP2644764B2 (en) 1997-08-25

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees