ATE179831T1 - Durch elektronenzylotron hervorgebrachte resonanzplasmaquelle und arbeitsweise - Google Patents
Durch elektronenzylotron hervorgebrachte resonanzplasmaquelle und arbeitsweiseInfo
- Publication number
- ATE179831T1 ATE179831T1 AT90905110T AT90905110T ATE179831T1 AT E179831 T1 ATE179831 T1 AT E179831T1 AT 90905110 T AT90905110 T AT 90905110T AT 90905110 T AT90905110 T AT 90905110T AT E179831 T1 ATE179831 T1 AT E179831T1
- Authority
- AT
- Austria
- Prior art keywords
- plasma
- chamber
- outlet
- magnets
- magnetic field
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
- H05H1/16—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields
- H05H1/18—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields wherein the fields oscillate at very high frequency, e.g. in the microwave range, e.g. using cyclotron resonance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3322—Problems associated with coating
- H01J2237/3323—Problems associated with coating uniformity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
- H01J2237/3345—Problems associated with etching anisotropy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/320,947 US5133826A (en) | 1989-03-09 | 1989-03-09 | Electron cyclotron resonance plasma source |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE179831T1 true ATE179831T1 (de) | 1999-05-15 |
Family
ID=23248538
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT90905110T ATE179831T1 (de) | 1989-03-09 | 1990-03-08 | Durch elektronenzylotron hervorgebrachte resonanzplasmaquelle und arbeitsweise |
Country Status (6)
Country | Link |
---|---|
US (1) | US5133826A (de) |
EP (1) | EP0462209B1 (de) |
JP (1) | JP2886978B2 (de) |
AT (1) | ATE179831T1 (de) |
DE (1) | DE69033089T2 (de) |
WO (1) | WO1990010547A1 (de) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5370765A (en) * | 1989-03-09 | 1994-12-06 | Applied Microwave Plasma Concepts, Inc. | Electron cyclotron resonance plasma source and method of operation |
US5061838A (en) * | 1989-06-23 | 1991-10-29 | Massachusetts Institute Of Technology | Toroidal electron cyclotron resonance reactor |
EP0537950B1 (de) * | 1991-10-17 | 1997-04-02 | Applied Materials, Inc. | Plasmareaktor |
US6475333B1 (en) * | 1993-07-26 | 2002-11-05 | Nihon Shinku Gijutsu Kabushiki Kaisha | Discharge plasma processing device |
US5506475A (en) * | 1994-03-22 | 1996-04-09 | Martin Marietta Energy Systems, Inc. | Microwave electron cyclotron electron resonance (ECR) ion source with a large, uniformly distributed, axially symmetric, ECR plasma volume |
JPH07263192A (ja) * | 1994-03-24 | 1995-10-13 | Ulvac Japan Ltd | エッチング装置 |
US5653811A (en) * | 1995-07-19 | 1997-08-05 | Chan; Chung | System for the plasma treatment of large area substrates |
JPH0987851A (ja) * | 1995-09-21 | 1997-03-31 | Canon Inc | マイクロ波プラズマ処理装置及び処理方法 |
JPH09180898A (ja) | 1995-12-06 | 1997-07-11 | Applied Materials Inc | プラズマ発生器及び発生方法 |
US5783102A (en) * | 1996-02-05 | 1998-07-21 | International Business Machines Corporation | Negative ion deductive source for etching high aspect ratio structures |
US5707452A (en) * | 1996-07-08 | 1998-01-13 | Applied Microwave Plasma Concepts, Inc. | Coaxial microwave applicator for an electron cyclotron resonance plasma source |
US20070122997A1 (en) | 1998-02-19 | 2007-05-31 | Silicon Genesis Corporation | Controlled process and resulting device |
US6291313B1 (en) | 1997-05-12 | 2001-09-18 | Silicon Genesis Corporation | Method and device for controlled cleaving process |
US6146979A (en) * | 1997-05-12 | 2000-11-14 | Silicon Genesis Corporation | Pressurized microbubble thin film separation process using a reusable substrate |
US6033974A (en) * | 1997-05-12 | 2000-03-07 | Silicon Genesis Corporation | Method for controlled cleaving process |
US6027988A (en) * | 1997-05-28 | 2000-02-22 | The Regents Of The University Of California | Method of separating films from bulk substrates by plasma immersion ion implantation |
US6548382B1 (en) | 1997-07-18 | 2003-04-15 | Silicon Genesis Corporation | Gettering technique for wafers made using a controlled cleaving process |
US6103599A (en) * | 1997-07-25 | 2000-08-15 | Silicon Genesis Corporation | Planarizing technique for multilayered substrates |
US6051073A (en) * | 1998-02-11 | 2000-04-18 | Silicon Genesis Corporation | Perforated shield for plasma immersion ion implantation |
US6228176B1 (en) | 1998-02-11 | 2001-05-08 | Silicon Genesis Corporation | Contoured platen design for plasma immerson ion implantation |
US6274459B1 (en) | 1998-02-17 | 2001-08-14 | Silicon Genesis Corporation | Method for non mass selected ion implant profile control |
US6291326B1 (en) | 1998-06-23 | 2001-09-18 | Silicon Genesis Corporation | Pre-semiconductor process implant and post-process film separation |
US6213050B1 (en) | 1998-12-01 | 2001-04-10 | Silicon Genesis Corporation | Enhanced plasma mode and computer system for plasma immersion ion implantation |
US6458723B1 (en) | 1999-06-24 | 2002-10-01 | Silicon Genesis Corporation | High temperature implant apparatus |
EP1212787B1 (de) * | 1999-08-10 | 2014-10-08 | Silicon Genesis Corporation | Spaltprozess für die herstellung mehrlagiger substrate mit geringer implantationsdosis |
US6500732B1 (en) | 1999-08-10 | 2002-12-31 | Silicon Genesis Corporation | Cleaving process to fabricate multilayered substrates using low implantation doses |
US6221740B1 (en) | 1999-08-10 | 2001-04-24 | Silicon Genesis Corporation | Substrate cleaving tool and method |
US6263941B1 (en) | 1999-08-10 | 2001-07-24 | Silicon Genesis Corporation | Nozzle for cleaving substrates |
US6873113B2 (en) * | 2000-04-13 | 2005-03-29 | Tokyo Electron Limited | Stand alone plasma vacuum pump |
US6729850B2 (en) | 2001-10-31 | 2004-05-04 | Tokyo Electron Limited | Applied plasma duct system |
US8187377B2 (en) * | 2002-10-04 | 2012-05-29 | Silicon Genesis Corporation | Non-contact etch annealing of strained layers |
US6812647B2 (en) * | 2003-04-03 | 2004-11-02 | Wayne D. Cornelius | Plasma generator useful for ion beam generation |
DE602006002264D1 (de) * | 2006-06-01 | 2008-09-25 | Varian Spa | Magnetanordnung für eine Sputter-Ionenpumpe |
FR2904178B1 (fr) * | 2006-07-21 | 2008-11-07 | Centre Nat Rech Scient | Dispositif et procede de production et/ou de confinement d'un plasma |
US7811900B2 (en) | 2006-09-08 | 2010-10-12 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a thick layer transfer process |
US8993410B2 (en) | 2006-09-08 | 2015-03-31 | Silicon Genesis Corporation | Substrate cleaving under controlled stress conditions |
US9362439B2 (en) | 2008-05-07 | 2016-06-07 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled shear region |
US8293619B2 (en) | 2008-08-28 | 2012-10-23 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled propagation |
EP1918965A1 (de) * | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Verfahren und Apparat zur Erzeugung eines Films durch Abscheidung aus einem Plasma |
US8330126B2 (en) | 2008-08-25 | 2012-12-11 | Silicon Genesis Corporation | Race track configuration and method for wafering silicon solar substrates |
US8329557B2 (en) | 2009-05-13 | 2012-12-11 | Silicon Genesis Corporation | Techniques for forming thin films by implantation with reduced channeling |
CN105101604A (zh) * | 2010-07-16 | 2015-11-25 | 财团法人工业技术研究院 | 电子回旋共振磁性模块与电子回旋共振装置 |
WO2012057967A2 (en) | 2010-10-27 | 2012-05-03 | Applied Materials, Inc. | Methods and apparatus for controlling photoresist line width roughness |
KR101871995B1 (ko) * | 2011-07-29 | 2018-06-28 | 삼성디스플레이 주식회사 | 스퍼터 장치 |
US8962224B2 (en) | 2012-08-13 | 2015-02-24 | Applied Materials, Inc. | Methods for controlling defects for extreme ultraviolet lithography (EUVL) photomask substrate |
US9215789B1 (en) | 2014-05-20 | 2015-12-15 | King Abdulaziz City For Science And Technology | Hybrid plasma source |
JP6963848B2 (ja) * | 2018-06-14 | 2021-11-10 | 株式会社エスイー | 原料をマイクロ波表面波プラズマで処理して原料と異なる生成物を得る製造装置及び製造方法 |
JP6795143B2 (ja) * | 2018-06-14 | 2020-12-02 | 株式会社エスイー | 原料をマイクロ波表面波プラズマで処理して原料と異なる生成物を得る製造装置及び製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2583250B1 (fr) * | 1985-06-07 | 1989-06-30 | France Etat | Procede et dispositif d'excitation d'un plasma par micro-ondes a la resonance cyclotronique electronique |
JP2603217B2 (ja) * | 1985-07-12 | 1997-04-23 | 株式会社日立製作所 | 表面処理方法及び表面処理装置 |
DE3750115T2 (de) * | 1986-10-20 | 1995-01-19 | Hitachi Ltd | Plasmabearbeitungsgerät. |
KR880013424A (ko) * | 1987-04-08 | 1988-11-30 | 미타 가츠시게 | 플라즈머 장치 |
US4778561A (en) * | 1987-10-30 | 1988-10-18 | Veeco Instruments, Inc. | Electron cyclotron resonance plasma source |
-
1989
- 1989-03-09 US US07/320,947 patent/US5133826A/en not_active Expired - Lifetime
-
1990
- 1990-03-08 EP EP90905110A patent/EP0462209B1/de not_active Expired - Lifetime
- 1990-03-08 DE DE69033089T patent/DE69033089T2/de not_active Expired - Fee Related
- 1990-03-08 WO PCT/US1990/001270 patent/WO1990010547A1/en active IP Right Grant
- 1990-03-08 AT AT90905110T patent/ATE179831T1/de not_active IP Right Cessation
- 1990-03-08 JP JP2505068A patent/JP2886978B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO1990010547A1 (en) | 1990-09-20 |
EP0462209A4 (en) | 1992-07-29 |
EP0462209A1 (de) | 1991-12-27 |
DE69033089T2 (de) | 1999-12-16 |
DE69033089D1 (de) | 1999-06-10 |
JP2886978B2 (ja) | 1999-04-26 |
EP0462209B1 (de) | 1999-05-06 |
JPH04505684A (ja) | 1992-10-01 |
US5133826A (en) | 1992-07-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |