JPH11224839A - 露光装置とデバイス製造方法、ならびに該露光装置の光学素子クリーニング方法 - Google Patents

露光装置とデバイス製造方法、ならびに該露光装置の光学素子クリーニング方法

Info

Publication number
JPH11224839A
JPH11224839A JP10023278A JP2327898A JPH11224839A JP H11224839 A JPH11224839 A JP H11224839A JP 10023278 A JP10023278 A JP 10023278A JP 2327898 A JP2327898 A JP 2327898A JP H11224839 A JPH11224839 A JP H11224839A
Authority
JP
Japan
Prior art keywords
exposure
exposure apparatus
oxygen
optical element
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP10023278A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11224839A5 (enExample
Inventor
Tomoharu Hase
友晴 長谷
Yukio Yamane
幸男 山根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP10023278A priority Critical patent/JPH11224839A/ja
Priority to US09/240,839 priority patent/US6252648B1/en
Publication of JPH11224839A publication Critical patent/JPH11224839A/ja
Priority to US09/876,103 priority patent/US7061576B2/en
Publication of JPH11224839A5 publication Critical patent/JPH11224839A5/ja
Priority to US11/185,780 priority patent/US7119878B2/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0006—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 with means to keep optical surfaces clean, e.g. by preventing or removing dirt, stains, contamination, condensation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP10023278A 1998-02-04 1998-02-04 露光装置とデバイス製造方法、ならびに該露光装置の光学素子クリーニング方法 Withdrawn JPH11224839A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP10023278A JPH11224839A (ja) 1998-02-04 1998-02-04 露光装置とデバイス製造方法、ならびに該露光装置の光学素子クリーニング方法
US09/240,839 US6252648B1 (en) 1998-02-04 1999-02-01 Exposure apparatus and method of cleaning optical element of the same
US09/876,103 US7061576B2 (en) 1998-02-04 2001-06-08 Exposure apparatus and method of cleaning optical element of the same
US11/185,780 US7119878B2 (en) 1998-02-04 2005-07-21 Exposure apparatus and method of cleaning optical element of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10023278A JPH11224839A (ja) 1998-02-04 1998-02-04 露光装置とデバイス製造方法、ならびに該露光装置の光学素子クリーニング方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005296399A Division JP4438072B2 (ja) 2005-10-11 2005-10-11 露光装置のレンズのクリーニング方法

Publications (2)

Publication Number Publication Date
JPH11224839A true JPH11224839A (ja) 1999-08-17
JPH11224839A5 JPH11224839A5 (enExample) 2004-11-18

Family

ID=12106143

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10023278A Withdrawn JPH11224839A (ja) 1998-02-04 1998-02-04 露光装置とデバイス製造方法、ならびに該露光装置の光学素子クリーニング方法

Country Status (2)

Country Link
US (3) US6252648B1 (enExample)
JP (1) JPH11224839A (enExample)

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JP2001284214A (ja) * 2000-03-30 2001-10-12 Canon Inc 露光装置、デバイス製造方法、半導体製造工場および露光装置の保守方法
JP2001345262A (ja) * 2000-03-30 2001-12-14 Canon Inc 露光装置、ガス置換方法、半導体デバイス製造方法、半導体製造工場および露光装置の保守方法
WO2002065183A1 (en) * 2001-02-14 2002-08-22 Nikon Corporation Lens-barrel, exposure device, and method of manufacturing device
JP2002261001A (ja) * 2000-12-09 2002-09-13 Carl-Zeiss-Stiftung Trading As Carl Zeiss Ｅｕｖリソグラフィ装置の除染をする方法および装置
EP1230989A3 (en) * 2001-02-13 2004-03-10 Canon Kabushiki Kaisha Optical element for use in exposure apparatus and method for rinsing said optical element
JP2004537157A (ja) * 2000-12-21 2004-12-09 イーユーヴィー リミテッド リアビリティ コーポレーション 放射線誘起表面汚染の軽減
US6980278B2 (en) 2003-05-26 2005-12-27 Oki Electric Industry Co., Ltd. Self-cleaning method for semiconductor exposure apparatus
US6984472B2 (en) 2000-06-27 2006-01-10 Matsushita Electric Industrial Co., Ltd. Exposure method and apparatus
JP2006093724A (ja) * 2004-09-15 2006-04-06 Asml Netherlands Bv リソグラフィ装置、ガス供給システム、パージ方法、並びにデバイス製造方法およびそれにより製造されたデバイス
KR100572250B1 (ko) * 2002-08-30 2006-04-19 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치, 디바이스 제조방법 및 그에 의해 제작된디바이스
US7061573B2 (en) 2000-04-14 2006-06-13 Canon Kabushiki Kaisha Contamination prevention in optical system
KR100706076B1 (ko) * 2001-11-19 2007-04-11 에이에스엠엘 네델란즈 비.브이. 리소그래피 투영장치, 디바이스 제조방법, 그 디바이스,오염된 물체를 세정하는 세정 유닛 및 방법
KR100767829B1 (ko) * 2001-11-19 2007-10-17 에이에스엠엘 네델란즈 비.브이. 디바이스 제조방법
KR100772125B1 (ko) 2002-06-26 2007-10-31 이유브이 리미티드 라이어빌러티 코포레이션 방사 주입된 표면 오염을 감소시키는 공정
JP2011134760A (ja) * 2009-12-22 2011-07-07 V Technology Co Ltd 露光装置
JP2012243852A (ja) * 2011-05-17 2012-12-10 Renesas Electronics Corp 露光装置、露光方法、半導体装置の製造方法、検査装置、検査方法及びクリーニング方法
WO2018100638A1 (ja) 2016-11-29 2018-06-07 ギガフォトン株式会社 レーザ加工システム及びレーザ加工方法
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WO2018100638A1 (ja) 2016-11-29 2018-06-07 ギガフォトン株式会社 レーザ加工システム及びレーザ加工方法
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