JPH0922896A - 金属膜の選択的形成方法 - Google Patents

金属膜の選択的形成方法

Info

Publication number
JPH0922896A
JPH0922896A JP7172480A JP17248095A JPH0922896A JP H0922896 A JPH0922896 A JP H0922896A JP 7172480 A JP7172480 A JP 7172480A JP 17248095 A JP17248095 A JP 17248095A JP H0922896 A JPH0922896 A JP H0922896A
Authority
JP
Japan
Prior art keywords
substrate
vacuum chamber
metal
connection hole
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7172480A
Other languages
English (en)
Japanese (ja)
Inventor
Hitoshi Ito
仁 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP7172480A priority Critical patent/JPH0922896A/ja
Priority to US08/674,812 priority patent/US6013575A/en
Priority to DE19627017A priority patent/DE19627017A1/de
Priority to KR1019960027354A priority patent/KR100236626B1/ko
Priority to TW085109158A priority patent/TW300325B/zh
Publication of JPH0922896A publication Critical patent/JPH0922896A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
JP7172480A 1995-07-07 1995-07-07 金属膜の選択的形成方法 Pending JPH0922896A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP7172480A JPH0922896A (ja) 1995-07-07 1995-07-07 金属膜の選択的形成方法
US08/674,812 US6013575A (en) 1995-07-07 1996-07-03 Method of selectively depositing a metal film
DE19627017A DE19627017A1 (de) 1995-07-07 1996-07-04 Verfahren zur selektiven Ablagerung eines Metallfilms
KR1019960027354A KR100236626B1 (ko) 1995-07-07 1996-07-06 금속막을 선택적으로 피착하는 방법
TW085109158A TW300325B (enExample) 1995-07-07 1996-07-26

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7172480A JPH0922896A (ja) 1995-07-07 1995-07-07 金属膜の選択的形成方法

Publications (1)

Publication Number Publication Date
JPH0922896A true JPH0922896A (ja) 1997-01-21

Family

ID=15942777

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7172480A Pending JPH0922896A (ja) 1995-07-07 1995-07-07 金属膜の選択的形成方法

Country Status (5)

Country Link
US (1) US6013575A (enExample)
JP (1) JPH0922896A (enExample)
KR (1) KR100236626B1 (enExample)
DE (1) DE19627017A1 (enExample)
TW (1) TW300325B (enExample)

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100467493B1 (ko) * 2001-06-16 2005-01-24 동부전자 주식회사 반도체 비아 홀 세정 공정에서의 불소 성분 제거 방법
KR100581244B1 (ko) * 1999-07-15 2006-05-22 후지쯔 가부시끼가이샤 반도체 장치의 제조 방법
JP2007273994A (ja) * 1999-01-08 2007-10-18 Toshiba Corp 半導体装置
JP2007294949A (ja) * 1999-01-08 2007-11-08 Toshiba Corp 半導体装置
JP2015514160A (ja) * 2012-03-27 2015-05-18 ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ 核形成の抑制を伴うタングステンによるフィーチャ充填
US9653353B2 (en) 2009-08-04 2017-05-16 Novellus Systems, Inc. Tungsten feature fill
JP2017112258A (ja) * 2015-12-17 2017-06-22 東京エレクトロン株式会社 成膜方法及び成膜装置
US9748137B2 (en) 2014-08-21 2017-08-29 Lam Research Corporation Method for void-free cobalt gap fill
US9754824B2 (en) 2015-05-27 2017-09-05 Lam Research Corporation Tungsten films having low fluorine content
US9953984B2 (en) 2015-02-11 2018-04-24 Lam Research Corporation Tungsten for wordline applications
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US9978605B2 (en) 2015-05-27 2018-05-22 Lam Research Corporation Method of forming low resistivity fluorine free tungsten film without nucleation
US9978610B2 (en) 2015-08-21 2018-05-22 Lam Research Corporation Pulsing RF power in etch process to enhance tungsten gapfill performance
US9997405B2 (en) 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
JP2018137369A (ja) * 2017-02-22 2018-08-30 東京エレクトロン株式会社 成膜方法及び成膜装置
US10170320B2 (en) 2015-05-18 2019-01-01 Lam Research Corporation Feature fill with multi-stage nucleation inhibition
US10211099B2 (en) 2016-12-19 2019-02-19 Lam Research Corporation Chamber conditioning for remote plasma process
US10256142B2 (en) 2009-08-04 2019-04-09 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US10381266B2 (en) 2012-03-27 2019-08-13 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
WO2020188801A1 (ja) * 2019-03-20 2020-09-24 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
US11348795B2 (en) 2017-08-14 2022-05-31 Lam Research Corporation Metal fill process for three-dimensional vertical NAND wordline
US11437269B2 (en) 2012-03-27 2022-09-06 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US11527478B2 (en) 2020-03-19 2022-12-13 Kioxia Corporation Semiconductor device, semiconductor memory device, and semiconductor device manufacturing method
US11549175B2 (en) 2018-05-03 2023-01-10 Lam Research Corporation Method of depositing tungsten and other metals in 3D NAND structures
US11972952B2 (en) 2018-12-14 2024-04-30 Lam Research Corporation Atomic layer deposition on 3D NAND structures
US11978666B2 (en) 2018-12-05 2024-05-07 Lam Research Corporation Void free low stress fill
US12002679B2 (en) 2019-04-11 2024-06-04 Lam Research Corporation High step coverage tungsten deposition
US12077858B2 (en) 2019-08-12 2024-09-03 Lam Research Corporation Tungsten deposition
US12237221B2 (en) 2019-05-22 2025-02-25 Lam Research Corporation Nucleation-free tungsten deposition
US12261081B2 (en) 2019-02-13 2025-03-25 Lam Research Corporation Tungsten feature fill with inhibition control
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition

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JP3102382B2 (ja) * 1997-05-30 2000-10-23 日本電気株式会社 半導体装置およびその製造方法
US6136690A (en) 1998-02-13 2000-10-24 Micron Technology, Inc. In situ plasma pre-deposition wafer treatment in chemical vapor deposition technology for semiconductor integrated circuit applications
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JP3137087B2 (ja) 1998-08-31 2001-02-19 日本電気株式会社 半導体装置の製造方法
US6204192B1 (en) * 1999-03-29 2001-03-20 Lsi Logic Corporation Plasma cleaning process for openings formed in at least one low dielectric constant insulation layer over copper metallization in integrated circuit structures
US6245655B1 (en) * 1999-04-01 2001-06-12 Cvc Products, Inc. Method for planarized deposition of a material
EP1050905B1 (en) * 1999-05-07 2017-06-21 Shinko Electric Industries Co. Ltd. Method of producing a semiconductor device with insulating layer
US6391785B1 (en) 1999-08-24 2002-05-21 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
US6727169B1 (en) * 1999-10-15 2004-04-27 Asm International, N.V. Method of making conformal lining layers for damascene metallization
JP2001291720A (ja) * 2000-04-05 2001-10-19 Hitachi Ltd 半導体集積回路装置および半導体集積回路装置の製造方法
US6482733B2 (en) 2000-05-15 2002-11-19 Asm Microchemistry Oy Protective layers prior to alternating layer deposition
US6759325B2 (en) 2000-05-15 2004-07-06 Asm Microchemistry Oy Sealing porous structures
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7732327B2 (en) 2000-06-28 2010-06-08 Applied Materials, Inc. Vapor deposition of tungsten materials
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US6825447B2 (en) 2000-12-29 2004-11-30 Applied Materials, Inc. Apparatus and method for uniform substrate heating and contaminate collection
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US6765178B2 (en) 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6660126B2 (en) 2001-03-02 2003-12-09 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6734020B2 (en) 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6620670B2 (en) 2002-01-18 2003-09-16 Applied Materials, Inc. Process conditions and precursors for atomic layer deposition (ALD) of AL2O3
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6827978B2 (en) 2002-02-11 2004-12-07 Applied Materials, Inc. Deposition of tungsten films
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
DE60329292D1 (de) * 2002-03-08 2009-10-29 Canon Anelva Corp Verfahren und Vorrichtung zum Herstellen von Metall-Schichten
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US6720027B2 (en) 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US6846516B2 (en) 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US6875271B2 (en) 2002-04-09 2005-04-05 Applied Materials, Inc. Simultaneous cyclical deposition in different processing regions
US7279432B2 (en) 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
KR20060079144A (ko) 2003-06-18 2006-07-05 어플라이드 머티어리얼스, 인코포레이티드 배리어 물질의 원자층 증착
US7608549B2 (en) 2005-03-15 2009-10-27 Asm America, Inc. Method of forming non-conformal layers
JP2008166062A (ja) * 2006-12-27 2008-07-17 Hitachi High-Technologies Corp 真空容器を持つ装置
US7772097B2 (en) * 2007-11-05 2010-08-10 Asm America, Inc. Methods of selectively depositing silicon-containing films
CN103337467B (zh) * 2013-06-27 2016-03-02 上海华力微电子有限公司 接触孔之底金属层去除量的量测方法
JP7118099B2 (ja) * 2020-01-15 2022-08-15 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置およびプログラム

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Cited By (49)

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Publication number Priority date Publication date Assignee Title
JP2007273994A (ja) * 1999-01-08 2007-10-18 Toshiba Corp 半導体装置
JP2007294949A (ja) * 1999-01-08 2007-11-08 Toshiba Corp 半導体装置
KR100581244B1 (ko) * 1999-07-15 2006-05-22 후지쯔 가부시끼가이샤 반도체 장치의 제조 방법
KR100467493B1 (ko) * 2001-06-16 2005-01-24 동부전자 주식회사 반도체 비아 홀 세정 공정에서의 불소 성분 제거 방법
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US9653353B2 (en) 2009-08-04 2017-05-16 Novellus Systems, Inc. Tungsten feature fill
US11075115B2 (en) 2009-08-04 2021-07-27 Novellus Systems, Inc. Tungsten feature fill
US10103058B2 (en) 2009-08-04 2018-10-16 Novellus Systems, Inc. Tungsten feature fill
US11410883B2 (en) 2009-08-04 2022-08-09 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US10256142B2 (en) 2009-08-04 2019-04-09 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US11437269B2 (en) 2012-03-27 2022-09-06 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
JP2015514160A (ja) * 2012-03-27 2015-05-18 ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ 核形成の抑制を伴うタングステンによるフィーチャ充填
US12387979B2 (en) 2012-03-27 2025-08-12 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US10381266B2 (en) 2012-03-27 2019-08-13 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US9748137B2 (en) 2014-08-21 2017-08-29 Lam Research Corporation Method for void-free cobalt gap fill
US10580695B2 (en) 2014-09-30 2020-03-03 Lam Research Corporation Feature fill with nucleation inhibition
US9997405B2 (en) 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
US11901227B2 (en) 2014-09-30 2024-02-13 Lam Research Corporation Feature fill with nucleation inhibition
US10529722B2 (en) 2015-02-11 2020-01-07 Lam Research Corporation Tungsten for wordline applications
US9953984B2 (en) 2015-02-11 2018-04-24 Lam Research Corporation Tungsten for wordline applications
US10170320B2 (en) 2015-05-18 2019-01-01 Lam Research Corporation Feature fill with multi-stage nucleation inhibition
US10580654B2 (en) 2015-05-18 2020-03-03 Lam Research Corporation Feature fill with multi-stage nucleation inhibition
US10916434B2 (en) 2015-05-18 2021-02-09 Lam Research Corporation Feature fill with multi-stage nucleation inhibition
US9978605B2 (en) 2015-05-27 2018-05-22 Lam Research Corporation Method of forming low resistivity fluorine free tungsten film without nucleation
US10546751B2 (en) 2015-05-27 2020-01-28 Lam Research Corporation Forming low resistivity fluorine free tungsten film without nucleation
US9754824B2 (en) 2015-05-27 2017-09-05 Lam Research Corporation Tungsten films having low fluorine content
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US9978610B2 (en) 2015-08-21 2018-05-22 Lam Research Corporation Pulsing RF power in etch process to enhance tungsten gapfill performance
JP2017112258A (ja) * 2015-12-17 2017-06-22 東京エレクトロン株式会社 成膜方法及び成膜装置
US11355345B2 (en) 2016-08-16 2022-06-07 Lam Research Corporation Method for preventing line bending during metal fill process
US12362188B2 (en) 2016-08-16 2025-07-15 Lam Research Corporation Method for preventing line bending during metal fill process
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
US10211099B2 (en) 2016-12-19 2019-02-19 Lam Research Corporation Chamber conditioning for remote plasma process
JP2018137369A (ja) * 2017-02-22 2018-08-30 東京エレクトロン株式会社 成膜方法及び成膜装置
US11348795B2 (en) 2017-08-14 2022-05-31 Lam Research Corporation Metal fill process for three-dimensional vertical NAND wordline
US11549175B2 (en) 2018-05-03 2023-01-10 Lam Research Corporation Method of depositing tungsten and other metals in 3D NAND structures
US11978666B2 (en) 2018-12-05 2024-05-07 Lam Research Corporation Void free low stress fill
US11972952B2 (en) 2018-12-14 2024-04-30 Lam Research Corporation Atomic layer deposition on 3D NAND structures
US12261081B2 (en) 2019-02-13 2025-03-25 Lam Research Corporation Tungsten feature fill with inhibition control
CN113316836B (zh) * 2019-03-20 2024-04-09 株式会社国际电气 半导体器件的制造方法、衬底处理方法、衬底处理装置及记录介质
JPWO2020188801A1 (enExample) * 2019-03-20 2020-09-24
WO2020188801A1 (ja) * 2019-03-20 2020-09-24 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
KR20210128475A (ko) * 2019-03-20 2021-10-26 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 방법, 기판 처리 장치 및 프로그램
CN113316836A (zh) * 2019-03-20 2021-08-27 株式会社国际电气 半导体器件的制造方法、衬底处理装置及程序
US12685044B2 (en) 2019-03-20 2026-07-14 Kokusai Electric Corporation Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and recording medium
US12002679B2 (en) 2019-04-11 2024-06-04 Lam Research Corporation High step coverage tungsten deposition
US12237221B2 (en) 2019-05-22 2025-02-25 Lam Research Corporation Nucleation-free tungsten deposition
US12077858B2 (en) 2019-08-12 2024-09-03 Lam Research Corporation Tungsten deposition
US11527478B2 (en) 2020-03-19 2022-12-13 Kioxia Corporation Semiconductor device, semiconductor memory device, and semiconductor device manufacturing method

Also Published As

Publication number Publication date
US6013575A (en) 2000-01-11
DE19627017A1 (de) 1997-01-09
KR100236626B1 (ko) 2000-01-15
TW300325B (enExample) 1997-03-11

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