TW300325B - - Google Patents

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Publication number
TW300325B
TW300325B TW085109158A TW85109158A TW300325B TW 300325 B TW300325 B TW 300325B TW 085109158 A TW085109158 A TW 085109158A TW 85109158 A TW85109158 A TW 85109158A TW 300325 B TW300325 B TW 300325B
Authority
TW
Taiwan
Prior art keywords
vacuum chamber
substrate
film
item
gas
Prior art date
Application number
TW085109158A
Other languages
English (en)
Chinese (zh)
Original Assignee
Toshiba Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Co Ltd filed Critical Toshiba Co Ltd
Application granted granted Critical
Publication of TW300325B publication Critical patent/TW300325B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
TW085109158A 1995-07-07 1996-07-26 TW300325B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7172480A JPH0922896A (ja) 1995-07-07 1995-07-07 金属膜の選択的形成方法

Publications (1)

Publication Number Publication Date
TW300325B true TW300325B (enExample) 1997-03-11

Family

ID=15942777

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085109158A TW300325B (enExample) 1995-07-07 1996-07-26

Country Status (5)

Country Link
US (1) US6013575A (enExample)
JP (1) JPH0922896A (enExample)
KR (1) KR100236626B1 (enExample)
DE (1) DE19627017A1 (enExample)
TW (1) TW300325B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI730638B (zh) * 2019-03-20 2021-06-11 日商國際電氣股份有限公司 半導體裝置之製造方法、基板處理裝置及記錄媒體

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JP7649741B2 (ja) 2018-12-14 2025-03-21 ラム リサーチ コーポレーション ３ｄ ｎａｎｄ構造上の原子層堆積
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI730638B (zh) * 2019-03-20 2021-06-11 日商國際電氣股份有限公司 半導體裝置之製造方法、基板處理裝置及記錄媒體

Also Published As

Publication number Publication date
JPH0922896A (ja) 1997-01-21
US6013575A (en) 2000-01-11
DE19627017A1 (de) 1997-01-09
KR100236626B1 (ko) 2000-01-15

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