JP4690308B2 - 高温水素含有プラズマによるチャンバ及びウェーハ表面から物質を除去する方法及び装置 - Google Patents
高温水素含有プラズマによるチャンバ及びウェーハ表面から物質を除去する方法及び装置 Download PDFInfo
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Description
固体薄膜(1992年)222号126−131頁のJ. Ramm等による"超高真空互換性プラズマ源によるシリコン・ウェーハの低温現場清掃(Low-Temperature In Situ Cleaning of Silicon Wafers with an Ultra High Vacuum Compatible Plasma Source)" 固体薄膜(1993年)228号23−26頁のJ. Ramm等による"シリコンウェーハの水素清掃:プラズマ処理後のウェーハ表面の研究(Hydrogen Cleaning of Silicon Wafers: Investigation of the Wafer Surface After Plasma Treatment)"
500℃、200ワットRFバイス
HFディップ、30秒(参照)。
図5A及び図5Bは、種々のコンタクト清掃プロセスで得られるコンタクト抵抗を示しており、図5Aは0.4μmのビアの結果を描いたものであり、図5Bは0.45μmのビアの結果を描いたものである。驚くべきことに、最も低い抵抗は室温にてICPのみのプロセスで得られる。室温におけるICPのみの状態で得られる結果は、500℃においてRFバイアスによるH2/Arエッチングを使用し且つHFディップを使用した参照プロセスを使用して得られる結果より極めて良好である。
12 ガス供給源
14 入口導管
16 高密度プラズマ放電チャンバ
18 サスセプタ
20 ウェーハ
22 ウェーハ支持表面
24 加熱器/冷却器
26 ターボ分子ポンプ
30 上壁
32 螺旋状ICPタイプコイル
34 RF源
36 プラズマ領域
40 基板層
42 絶縁二酸化珪素層
44 ホール
46 接点
48 薄層
50 ブランケット層
Claims (16)
- 半導体ウェーハ処理チャンバ内の半導体ウェーハにRFバイアスを掛けることなく該半導体ウェーハ上のフィーチャーを清掃する方法であって、
シリコン残留汚染物質が前記チャンバの内側表面上に被着された、前記チャンバ内の少なくとも1つの第1の半導体ウェーハ上でポリシリコン層をエッチングし、そして、その後、前記チャンバから少なくとも1つの前記第1のウェーハを除去する段階と、
前記チャンバに水素及び不活性ガスを備えるガス混合物を与える段階と、
前記チャンバに結合されたICP電源を励磁することによって前記ガス混合物中に第1の誘導結合プラズマを形成し、かつプラズマに対する表面のバイアスポテンシャルを15eV未満のレベルに維持する段階と、
前記内側表面から前記シリコン残留汚染物質を除去するに十分な時間だけ前記第1のプラズマを維持する段階と、
前記チャンバ内の接地されていないサスセプタ表面上に、自身上にフィーチャーを具備する少なくとも一つの第2の半導体ウェーハを配置する段階であって、前記フィーチャーは自身上に汚染物質を有し、及び前記フィーチャーはシリコン・コンタクト又は金属被膜の少なくとも1つである前記段階と、
前記水素及び不活性ガスを備えるガス混合物を前記チャンバに与える段階と、
前記チャンバに結合された前記ICP電源を励磁することによって前記ガス混合物中に第2の誘導結合プラズマを形成し、かつプラズマに対するウェーハのバイアスポテンシャルを15eV未満のレベルに維持する段階と、
前記フィーチャーから汚染物質を除去するに十分な時間だけ前記第2のプラズマを維持する段階と、を備える方法。 - 前記フィーチャーはSiO2層内のシリコン・コンタクトであり、
前記シリコン・コンタクトは自身上に酸化汚染物質を有し、及び
前記プラズマを維持するのは前記シリコン・コンタクトからの前記酸化汚染物質を除去するのに十分な時間である、請求項1に記載の方法。 - 前記フィーチャーはSiO2層内のシリコン・コンタクトであり、
前記シリコン・コンタクトは自身上にCFx汚染物質を有し、及び
前記プラズマを維持するのは前記シリコン・コンタクトからの前記Cfx汚染物質を除去するのに十分な時間である、請求項1に記載の方法。 - 前記プロセスチャンバ内で自身上に前記フィーチャーを有する前記半導体ウェーハを配置する前に、
シリコン残留汚染物質が前記チャンバの内側表面上に被着された、前記チャンバ内の少なくとも1つの半導体ウェーハ上でポリシリコン層をエッチングし、そして、その後、前記チャンバから少なくとも1つの前記ウェーハを除去する段階と、
前記チャンバに水素及び不活性ガスを備えるガス混合物を与える段階と、
前記チャンバに結合されたICP電源を励磁することによって前記ガス混合物中に誘導結合プラズマを形成し、かつプラズマに対する表面のバイアスポテンシャルを15eV未満のレベルに維持する段階と、
前記内側表面から前記シリコン残留汚染物質を除去するに十分な時間だけ前記プラズマを維持する段階と、を備える、請求項1から請求項3までのいずれか1項に記載の方法。 - 前記フィーチャーは自身上に酸化汚染物質を有する金属被覆を備え、前記プラズマを維持するのは前記金属被覆からの前記酸化汚染物質を除去するのに十分な時間である、請求項1に記載の方法。
- 前記フィーチャーは自身上に有機汚染物質を有する金属被覆を備え、前記プラズマを維持するのは前記金属被覆からの前記有機汚染物質を除去するのに十分な時間である、請求項1に記載の方法。
- 前記金属被覆は銅、銀及び金から成る群から選択され、かつ前記不活性ガスがヘリウムである、請求項5または請求項6に記載の方法。
- 前記金属被覆はTi、Co、Ta、W及びNiから成る群から選択され、かつ前記不活性ガスはアルゴン又はヘリウムである、請求項5または請求項6に記載の方法。
- 前記不活性ガスはアルゴン又はヘリウムである、請求項1に記載の方法。
- 前記ガス混合物は20%〜80%の水素を備える、請求項1から請求項9までのいずれか1項に記載の方法。
- 前記ICP電源が励磁されて10〜15eVの前記プラズマに対する前記ウェーハのバイアスポテンシャルを与える、請求項1から請求項10までのいずれか1項に記載の方法。
- 前記サスセプタ表面は電気絶縁され、かつ前記ウェーハは5〜10eVの範囲のポテンシャルで浮動される、請求項1から請求項11までのいずれか1項に記載の方法。
- 前記ICP電源が励磁されて不活性ガスイオン及び水素ラジカルから実質的に成る前記プラズマを形成する、請求項1から請求項12までのいずれか1項に記載の方法。
- 前記サスセプタを室温より高い500℃まで加熱する段階を更に備える、請求項1から請求項13までのいずれか1項に記載の方法。
- 前記サスセプタ表面を室温より高く維持する段階を更に備える、請求項1から請求項14までのいずれか1項に記載の方法。
- 前記サスセプタ表面を室温に維持する段階を更に備える、請求項1から請求項15までのいずれか1項に記載の方法。
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US10/342,645 | 2003-01-15 | ||
US10/342,645 US6992011B2 (en) | 2003-01-15 | 2003-01-15 | Method and apparatus for removing material from chamber and wafer surfaces by high temperature hydrogen-containing plasma |
PCT/US2004/000649 WO2004065658A1 (en) | 2003-01-15 | 2004-01-12 | Method and apparatus for removing material from chamber and wafer surfaces by high temperature hydrogen-containing plasma |
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JP2007535119A JP2007535119A (ja) | 2007-11-29 |
JP4690308B2 true JP4690308B2 (ja) | 2011-06-01 |
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JP2006500903A Expired - Fee Related JP4690308B2 (ja) | 2003-01-15 | 2004-01-12 | 高温水素含有プラズマによるチャンバ及びウェーハ表面から物質を除去する方法及び装置 |
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JP (1) | JP4690308B2 (ja) |
TW (1) | TWI231540B (ja) |
WO (1) | WO2004065658A1 (ja) |
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CN112209362B (zh) * | 2020-09-27 | 2021-12-03 | 电子科技大学 | 一种等离子体诱导活化氟化碳的方法及锂一次电池制备 |
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JPH04229621A (ja) * | 1990-07-09 | 1992-08-19 | Mitsubishi Electric Corp | 半導体基板表面の処理方法 |
JPH08264483A (ja) * | 1995-03-28 | 1996-10-11 | Sony Corp | 半導体装置の製造方法 |
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JP2000082681A (ja) * | 1998-09-04 | 2000-03-21 | Sony Corp | 半導体装置の製造方法 |
JP2003535458A (ja) * | 2000-04-25 | 2003-11-25 | 東京エレクトロン株式会社 | 加工物のプラズマクリーニング方法とその装置 |
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US6992011B2 (en) | 2006-01-31 |
WO2004065658A1 (en) | 2004-08-05 |
TW200425331A (en) | 2004-11-16 |
JP2007535119A (ja) | 2007-11-29 |
TWI231540B (en) | 2005-04-21 |
US20040137750A1 (en) | 2004-07-15 |
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