KR100236626B1 - 금속막을 선택적으로 피착하는 방법 - Google Patents
금속막을 선택적으로 피착하는 방법 Download PDFInfo
- Publication number
- KR100236626B1 KR100236626B1 KR1019960027354A KR19960027354A KR100236626B1 KR 100236626 B1 KR100236626 B1 KR 100236626B1 KR 1019960027354 A KR1019960027354 A KR 1019960027354A KR 19960027354 A KR19960027354 A KR 19960027354A KR 100236626 B1 KR100236626 B1 KR 100236626B1
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- vacuum chamber
- gas
- film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
- H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
- H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
- H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7172480A JPH0922896A (ja) | 1995-07-07 | 1995-07-07 | 金属膜の選択的形成方法 |
| JP95-172480 | 1995-07-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR100236626B1 true KR100236626B1 (ko) | 2000-01-15 |
Family
ID=15942777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960027354A Expired - Fee Related KR100236626B1 (ko) | 1995-07-07 | 1996-07-06 | 금속막을 선택적으로 피착하는 방법 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6013575A (enExample) |
| JP (1) | JPH0922896A (enExample) |
| KR (1) | KR100236626B1 (enExample) |
| DE (1) | DE19627017A1 (enExample) |
| TW (1) | TW300325B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210092113A (ko) * | 2020-01-15 | 2021-07-23 | 가부시키가이샤 코쿠사이 엘렉트릭 | 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체 |
Families Citing this family (80)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3102382B2 (ja) * | 1997-05-30 | 2000-10-23 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| US6136690A (en) | 1998-02-13 | 2000-10-24 | Micron Technology, Inc. | In situ plasma pre-deposition wafer treatment in chemical vapor deposition technology for semiconductor integrated circuit applications |
| US6159852A (en) | 1998-02-13 | 2000-12-12 | Micron Technology, Inc. | Method of depositing polysilicon, method of fabricating a field effect transistor, method of forming a contact to a substrate, method of forming a capacitor |
| US6797558B2 (en) * | 2001-04-24 | 2004-09-28 | Micron Technology, Inc. | Methods of forming a capacitor with substantially selective deposite of polysilicon on a substantially crystalline capacitor dielectric layer |
| JP3137087B2 (ja) | 1998-08-31 | 2001-02-19 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP4724146B2 (ja) * | 1999-01-08 | 2011-07-13 | 株式会社東芝 | 半導体装置 |
| JP4672697B2 (ja) * | 1999-01-08 | 2011-04-20 | 株式会社東芝 | 半導体装置の製造方法 |
| US6204192B1 (en) * | 1999-03-29 | 2001-03-20 | Lsi Logic Corporation | Plasma cleaning process for openings formed in at least one low dielectric constant insulation layer over copper metallization in integrated circuit structures |
| US6245655B1 (en) * | 1999-04-01 | 2001-06-12 | Cvc Products, Inc. | Method for planarized deposition of a material |
| EP1050905B1 (en) * | 1999-05-07 | 2017-06-21 | Shinko Electric Industries Co. Ltd. | Method of producing a semiconductor device with insulating layer |
| JP4108228B2 (ja) * | 1999-07-15 | 2008-06-25 | 富士通株式会社 | 半導体装置の製造方法 |
| US6391785B1 (en) | 1999-08-24 | 2002-05-21 | Interuniversitair Microelektronica Centrum (Imec) | Method for bottomless deposition of barrier layers in integrated circuit metallization schemes |
| US6727169B1 (en) * | 1999-10-15 | 2004-04-27 | Asm International, N.V. | Method of making conformal lining layers for damascene metallization |
| JP2001291720A (ja) * | 2000-04-05 | 2001-10-19 | Hitachi Ltd | 半導体集積回路装置および半導体集積回路装置の製造方法 |
| US6482733B2 (en) | 2000-05-15 | 2002-11-19 | Asm Microchemistry Oy | Protective layers prior to alternating layer deposition |
| US6759325B2 (en) | 2000-05-15 | 2004-07-06 | Asm Microchemistry Oy | Sealing porous structures |
| US6620723B1 (en) | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7101795B1 (en) | 2000-06-28 | 2006-09-05 | Applied Materials, Inc. | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer |
| US7732327B2 (en) | 2000-06-28 | 2010-06-08 | Applied Materials, Inc. | Vapor deposition of tungsten materials |
| US7405158B2 (en) | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
| US6551929B1 (en) | 2000-06-28 | 2003-04-22 | Applied Materials, Inc. | Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques |
| US7964505B2 (en) | 2005-01-19 | 2011-06-21 | Applied Materials, Inc. | Atomic layer deposition of tungsten materials |
| US6825447B2 (en) | 2000-12-29 | 2004-11-30 | Applied Materials, Inc. | Apparatus and method for uniform substrate heating and contaminate collection |
| US6998579B2 (en) | 2000-12-29 | 2006-02-14 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US6765178B2 (en) | 2000-12-29 | 2004-07-20 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US6660126B2 (en) | 2001-03-02 | 2003-12-09 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US6734020B2 (en) | 2001-03-07 | 2004-05-11 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
| KR100467493B1 (ko) * | 2001-06-16 | 2005-01-24 | 동부전자 주식회사 | 반도체 비아 홀 세정 공정에서의 불소 성분 제거 방법 |
| US7211144B2 (en) | 2001-07-13 | 2007-05-01 | Applied Materials, Inc. | Pulsed nucleation deposition of tungsten layers |
| US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
| US6936906B2 (en) | 2001-09-26 | 2005-08-30 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
| US7049226B2 (en) | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
| US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
| US6620670B2 (en) | 2002-01-18 | 2003-09-16 | Applied Materials, Inc. | Process conditions and precursors for atomic layer deposition (ALD) of AL2O3 |
| US6998014B2 (en) | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
| US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US6827978B2 (en) | 2002-02-11 | 2004-12-07 | Applied Materials, Inc. | Deposition of tungsten films |
| US6833161B2 (en) | 2002-02-26 | 2004-12-21 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
| DE60329292D1 (de) * | 2002-03-08 | 2009-10-29 | Canon Anelva Corp | Verfahren und Vorrichtung zum Herstellen von Metall-Schichten |
| US7439191B2 (en) | 2002-04-05 | 2008-10-21 | Applied Materials, Inc. | Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications |
| US6720027B2 (en) | 2002-04-08 | 2004-04-13 | Applied Materials, Inc. | Cyclical deposition of a variable content titanium silicon nitride layer |
| US6846516B2 (en) | 2002-04-08 | 2005-01-25 | Applied Materials, Inc. | Multiple precursor cyclical deposition system |
| US6875271B2 (en) | 2002-04-09 | 2005-04-05 | Applied Materials, Inc. | Simultaneous cyclical deposition in different processing regions |
| US7279432B2 (en) | 2002-04-16 | 2007-10-09 | Applied Materials, Inc. | System and method for forming an integrated barrier layer |
| US7262133B2 (en) | 2003-01-07 | 2007-08-28 | Applied Materials, Inc. | Enhancement of copper line reliability using thin ALD tan film to cap the copper line |
| KR20060079144A (ko) | 2003-06-18 | 2006-07-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 배리어 물질의 원자층 증착 |
| US7608549B2 (en) | 2005-03-15 | 2009-10-27 | Asm America, Inc. | Method of forming non-conformal layers |
| JP2008166062A (ja) * | 2006-12-27 | 2008-07-17 | Hitachi High-Technologies Corp | 真空容器を持つ装置 |
| US7772097B2 (en) * | 2007-11-05 | 2010-08-10 | Asm America, Inc. | Methods of selectively depositing silicon-containing films |
| US12444651B2 (en) | 2009-08-04 | 2025-10-14 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| US10256142B2 (en) | 2009-08-04 | 2019-04-09 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| US9653353B2 (en) | 2009-08-04 | 2017-05-16 | Novellus Systems, Inc. | Tungsten feature fill |
| KR102100520B1 (ko) * | 2012-03-27 | 2020-04-14 | 노벨러스 시스템즈, 인코포레이티드 | 핵생성 억제를 사용하는 텅스텐 피처 충진 |
| US10381266B2 (en) | 2012-03-27 | 2019-08-13 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| US11437269B2 (en) | 2012-03-27 | 2022-09-06 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
| CN103337467B (zh) * | 2013-06-27 | 2016-03-02 | 上海华力微电子有限公司 | 接触孔之底金属层去除量的量测方法 |
| US9748137B2 (en) | 2014-08-21 | 2017-08-29 | Lam Research Corporation | Method for void-free cobalt gap fill |
| US9997405B2 (en) | 2014-09-30 | 2018-06-12 | Lam Research Corporation | Feature fill with nucleation inhibition |
| US9953984B2 (en) | 2015-02-11 | 2018-04-24 | Lam Research Corporation | Tungsten for wordline applications |
| US10170320B2 (en) | 2015-05-18 | 2019-01-01 | Lam Research Corporation | Feature fill with multi-stage nucleation inhibition |
| US9978605B2 (en) | 2015-05-27 | 2018-05-22 | Lam Research Corporation | Method of forming low resistivity fluorine free tungsten film without nucleation |
| US9754824B2 (en) | 2015-05-27 | 2017-09-05 | Lam Research Corporation | Tungsten films having low fluorine content |
| US9972504B2 (en) | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
| US9978610B2 (en) | 2015-08-21 | 2018-05-22 | Lam Research Corporation | Pulsing RF power in etch process to enhance tungsten gapfill performance |
| JP6545094B2 (ja) * | 2015-12-17 | 2019-07-17 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| US10573522B2 (en) | 2016-08-16 | 2020-02-25 | Lam Research Corporation | Method for preventing line bending during metal fill process |
| US10211099B2 (en) | 2016-12-19 | 2019-02-19 | Lam Research Corporation | Chamber conditioning for remote plasma process |
| JP6728087B2 (ja) * | 2017-02-22 | 2020-07-22 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| KR20250073535A (ko) | 2017-08-14 | 2025-05-27 | 램 리써치 코포레이션 | 3차원 수직 nand 워드라인을 위한 금속 충진 프로세스 |
| WO2019213604A1 (en) | 2018-05-03 | 2019-11-07 | Lam Research Corporation | Method of depositing tungsten and other metals in 3d nand structures |
| KR102828798B1 (ko) | 2018-12-05 | 2025-07-02 | 램 리써치 코포레이션 | 보이드 프리 (void free) 저응력 (low stress) 충진 |
| JP7649741B2 (ja) | 2018-12-14 | 2025-03-21 | ラム リサーチ コーポレーション | 3d nand構造上の原子層堆積 |
| SG11202108725XA (en) | 2019-02-13 | 2021-09-29 | Lam Res Corp | Tungsten feature fill with inhibition control |
| KR102685504B1 (ko) | 2019-03-20 | 2024-07-17 | 가부시키가이샤 코쿠사이 엘렉트릭 | 반도체 장치의 제조 방법, 기판 처리 방법, 기판 처리 장치 및 프로그램 |
| US12002679B2 (en) | 2019-04-11 | 2024-06-04 | Lam Research Corporation | High step coverage tungsten deposition |
| JP2022533834A (ja) | 2019-05-22 | 2022-07-26 | ラム リサーチ コーポレーション | 核生成のないタングステン堆積 |
| US12077858B2 (en) | 2019-08-12 | 2024-09-03 | Lam Research Corporation | Tungsten deposition |
| JP2021150526A (ja) | 2020-03-19 | 2021-09-27 | キオクシア株式会社 | 半導体装置、半導体記憶装置、及び、半導体装置の製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6096931A (ja) * | 1983-11-01 | 1985-05-30 | Matsushita Electric Ind Co Ltd | 制御電圧発生装置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6091631A (ja) * | 1983-10-25 | 1985-05-23 | Toshiba Corp | 半導体装置の製造方法 |
| JPS6231116A (ja) * | 1985-08-02 | 1987-02-10 | Toshiba Corp | 半導体装置の製造方法 |
| US5223455A (en) * | 1987-07-10 | 1993-06-29 | Kabushiki Kaisha Toshiba | Method of forming refractory metal film |
| JP2720386B2 (ja) * | 1988-02-05 | 1998-03-04 | 富士通株式会社 | 半導体装置の製造方法 |
| JP2726438B2 (ja) * | 1988-07-28 | 1998-03-11 | 株式会社東芝 | 薄膜形成装置 |
| US4983543A (en) * | 1988-09-07 | 1991-01-08 | Fujitsu Limited | Method of manufacturing a semiconductor integrated circuit having an interconnection wire embedded in a protective layer covering the semiconductor integrated circuit |
| DE68926656T2 (de) * | 1988-11-21 | 1996-11-28 | Toshiba Kawasaki Kk | Verfahren zum Herstellen eines Halbleiterbauelementes |
| US5037775A (en) * | 1988-11-30 | 1991-08-06 | Mcnc | Method for selectively depositing single elemental semiconductor material on substrates |
| US5112439A (en) * | 1988-11-30 | 1992-05-12 | Mcnc | Method for selectively depositing material on substrates |
| US5043299B1 (en) * | 1989-12-01 | 1997-02-25 | Applied Materials Inc | Process for selective deposition of tungsten on semiconductor wafer |
| JP3469251B2 (ja) * | 1990-02-14 | 2003-11-25 | 株式会社東芝 | 半導体装置の製造方法 |
| JPH07115130A (ja) * | 1993-10-14 | 1995-05-02 | Toshiba Corp | 半導体装置の製造方法 |
-
1995
- 1995-07-07 JP JP7172480A patent/JPH0922896A/ja active Pending
-
1996
- 1996-07-03 US US08/674,812 patent/US6013575A/en not_active Expired - Fee Related
- 1996-07-04 DE DE19627017A patent/DE19627017A1/de not_active Ceased
- 1996-07-06 KR KR1019960027354A patent/KR100236626B1/ko not_active Expired - Fee Related
- 1996-07-26 TW TW085109158A patent/TW300325B/zh not_active IP Right Cessation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6096931A (ja) * | 1983-11-01 | 1985-05-30 | Matsushita Electric Ind Co Ltd | 制御電圧発生装置 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210092113A (ko) * | 2020-01-15 | 2021-07-23 | 가부시키가이샤 코쿠사이 엘렉트릭 | 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체 |
| KR102337523B1 (ko) | 2020-01-15 | 2021-12-08 | 가부시키가이샤 코쿠사이 엘렉트릭 | 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0922896A (ja) | 1997-01-21 |
| US6013575A (en) | 2000-01-11 |
| DE19627017A1 (de) | 1997-01-09 |
| TW300325B (enExample) | 1997-03-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6013575A (en) | Method of selectively depositing a metal film | |
| US6432830B1 (en) | Semiconductor fabrication process | |
| US6589890B2 (en) | Precleaning process for metal plug that minimizes damage to low-κ dielectric | |
| US6734102B2 (en) | Plasma treatment for copper oxide reduction | |
| US6352081B1 (en) | Method of cleaning a semiconductor device processing chamber after a copper etch process | |
| US5399237A (en) | Etching titanium nitride using carbon-fluoride and carbon-oxide gas | |
| CN100508163C (zh) | 半导体装置的制造方法 | |
| EP0809283A2 (en) | Method of treating wafers | |
| CN101448580B (zh) | 具有室去氟化和晶片去氟化中间步骤的等离子体蚀刻和光刻胶剥离工艺 | |
| US20040046260A1 (en) | Plasma treatment for copper oxide reduction | |
| KR20030007457A (ko) | 소재의 플라즈마 세정장치 및 방법 | |
| US20050133059A1 (en) | Method for cleaning a plasma enhanced CVD chamber | |
| JP3297291B2 (ja) | 半導体装置の製造方法 | |
| TWI244136B (en) | Low oxygen content photoresist stripping process for low dielectric constant materials | |
| JP3400918B2 (ja) | 半導体装置の製造方法 | |
| KR100838502B1 (ko) | 반도체 장치의 제조 방법 | |
| JP3575240B2 (ja) | 半導体装置の製造方法 | |
| US6444556B2 (en) | Chemistry for chemical vapor deposition of titanium containing films | |
| WO1993017453A2 (en) | Ammonia plasma treatment of silicide contact surfaces in semiconductor devices | |
| JP4058669B2 (ja) | シリコン基板上への導電性珪化物層の形成方法および導電性珪化物接点の形成方法 | |
| TWI837338B (zh) | 基板處理方法及基板處理裝置 | |
| US20020072228A1 (en) | Semiconductor conductive pattern formation method | |
| JP3931394B2 (ja) | プラズマ処理装置およびプラズマ処理方法 | |
| US20250112054A1 (en) | Carbon replenishment of silicon-containing materials to reduce thickness loss | |
| KR100291439B1 (ko) | 반도체소자의제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U11-oth-PR1002 Fee payment year number: 1 |
|
| PG1601 | Publication of registration |
St.27 status event code: A-4-4-Q10-Q13-nap-PG1601 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4 |
|
| FPAY | Annual fee payment |
Payment date: 20030930 Year of fee payment: 5 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5 |
|
| LAPS | Lapse due to unpaid annual fee | ||
| PC1903 | Unpaid annual fee |
St.27 status event code: A-4-4-U10-U13-oth-PC1903 Not in force date: 20041003 Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE |
|
| PC1903 | Unpaid annual fee |
St.27 status event code: N-4-6-H10-H13-oth-PC1903 Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 20041003 |
|
| R18 | Changes to party contact information recorded |
Free format text: ST27 STATUS EVENT CODE: A-5-5-R10-R18-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |