KR100236626B1 - 금속막을 선택적으로 피착하는 방법 - Google Patents

금속막을 선택적으로 피착하는 방법 Download PDF

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Publication number
KR100236626B1
KR100236626B1 KR1019960027354A KR19960027354A KR100236626B1 KR 100236626 B1 KR100236626 B1 KR 100236626B1 KR 1019960027354 A KR1019960027354 A KR 1019960027354A KR 19960027354 A KR19960027354 A KR 19960027354A KR 100236626 B1 KR100236626 B1 KR 100236626B1
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KR
South Korea
Prior art keywords
substrate
vacuum chamber
gas
film
layer
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1019960027354A
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English (en)
Korean (ko)
Inventor
히또시 이또
Original Assignee
니시무로 타이죠
가부시키가이샤 도시바
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Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
KR1019960027354A 1995-07-07 1996-07-06 금속막을 선택적으로 피착하는 방법 Expired - Fee Related KR100236626B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7172480A JPH0922896A (ja) 1995-07-07 1995-07-07 金属膜の選択的形成方法
JP95-172480 1995-07-07

Publications (1)

Publication Number Publication Date
KR100236626B1 true KR100236626B1 (ko) 2000-01-15

Family

ID=15942777

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960027354A Expired - Fee Related KR100236626B1 (ko) 1995-07-07 1996-07-06 금속막을 선택적으로 피착하는 방법

Country Status (5)

Country Link
US (1) US6013575A (enExample)
JP (1) JPH0922896A (enExample)
KR (1) KR100236626B1 (enExample)
DE (1) DE19627017A1 (enExample)
TW (1) TW300325B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210092113A (ko) * 2020-01-15 2021-07-23 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체

Families Citing this family (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3102382B2 (ja) * 1997-05-30 2000-10-23 日本電気株式会社 半導体装置およびその製造方法
US6136690A (en) 1998-02-13 2000-10-24 Micron Technology, Inc. In situ plasma pre-deposition wafer treatment in chemical vapor deposition technology for semiconductor integrated circuit applications
US6159852A (en) 1998-02-13 2000-12-12 Micron Technology, Inc. Method of depositing polysilicon, method of fabricating a field effect transistor, method of forming a contact to a substrate, method of forming a capacitor
US6797558B2 (en) * 2001-04-24 2004-09-28 Micron Technology, Inc. Methods of forming a capacitor with substantially selective deposite of polysilicon on a substantially crystalline capacitor dielectric layer
JP3137087B2 (ja) 1998-08-31 2001-02-19 日本電気株式会社 半導体装置の製造方法
JP4724146B2 (ja) * 1999-01-08 2011-07-13 株式会社東芝 半導体装置
JP4672697B2 (ja) * 1999-01-08 2011-04-20 株式会社東芝 半導体装置の製造方法
US6204192B1 (en) * 1999-03-29 2001-03-20 Lsi Logic Corporation Plasma cleaning process for openings formed in at least one low dielectric constant insulation layer over copper metallization in integrated circuit structures
US6245655B1 (en) * 1999-04-01 2001-06-12 Cvc Products, Inc. Method for planarized deposition of a material
EP1050905B1 (en) * 1999-05-07 2017-06-21 Shinko Electric Industries Co. Ltd. Method of producing a semiconductor device with insulating layer
JP4108228B2 (ja) * 1999-07-15 2008-06-25 富士通株式会社 半導体装置の製造方法
US6391785B1 (en) 1999-08-24 2002-05-21 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
US6727169B1 (en) * 1999-10-15 2004-04-27 Asm International, N.V. Method of making conformal lining layers for damascene metallization
JP2001291720A (ja) * 2000-04-05 2001-10-19 Hitachi Ltd 半導体集積回路装置および半導体集積回路装置の製造方法
US6482733B2 (en) 2000-05-15 2002-11-19 Asm Microchemistry Oy Protective layers prior to alternating layer deposition
US6759325B2 (en) 2000-05-15 2004-07-06 Asm Microchemistry Oy Sealing porous structures
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7732327B2 (en) 2000-06-28 2010-06-08 Applied Materials, Inc. Vapor deposition of tungsten materials
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US6825447B2 (en) 2000-12-29 2004-11-30 Applied Materials, Inc. Apparatus and method for uniform substrate heating and contaminate collection
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US6765178B2 (en) 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6660126B2 (en) 2001-03-02 2003-12-09 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6734020B2 (en) 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
KR100467493B1 (ko) * 2001-06-16 2005-01-24 동부전자 주식회사 반도체 비아 홀 세정 공정에서의 불소 성분 제거 방법
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6620670B2 (en) 2002-01-18 2003-09-16 Applied Materials, Inc. Process conditions and precursors for atomic layer deposition (ALD) of AL2O3
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6827978B2 (en) 2002-02-11 2004-12-07 Applied Materials, Inc. Deposition of tungsten films
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
DE60329292D1 (de) * 2002-03-08 2009-10-29 Canon Anelva Corp Verfahren und Vorrichtung zum Herstellen von Metall-Schichten
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US6720027B2 (en) 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US6846516B2 (en) 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US6875271B2 (en) 2002-04-09 2005-04-05 Applied Materials, Inc. Simultaneous cyclical deposition in different processing regions
US7279432B2 (en) 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
KR20060079144A (ko) 2003-06-18 2006-07-05 어플라이드 머티어리얼스, 인코포레이티드 배리어 물질의 원자층 증착
US7608549B2 (en) 2005-03-15 2009-10-27 Asm America, Inc. Method of forming non-conformal layers
JP2008166062A (ja) * 2006-12-27 2008-07-17 Hitachi High-Technologies Corp 真空容器を持つ装置
US7772097B2 (en) * 2007-11-05 2010-08-10 Asm America, Inc. Methods of selectively depositing silicon-containing films
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US10256142B2 (en) 2009-08-04 2019-04-09 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US9653353B2 (en) 2009-08-04 2017-05-16 Novellus Systems, Inc. Tungsten feature fill
KR102100520B1 (ko) * 2012-03-27 2020-04-14 노벨러스 시스템즈, 인코포레이티드 핵생성 억제를 사용하는 텅스텐 피처 충진
US10381266B2 (en) 2012-03-27 2019-08-13 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US11437269B2 (en) 2012-03-27 2022-09-06 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
CN103337467B (zh) * 2013-06-27 2016-03-02 上海华力微电子有限公司 接触孔之底金属层去除量的量测方法
US9748137B2 (en) 2014-08-21 2017-08-29 Lam Research Corporation Method for void-free cobalt gap fill
US9997405B2 (en) 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
US9953984B2 (en) 2015-02-11 2018-04-24 Lam Research Corporation Tungsten for wordline applications
US10170320B2 (en) 2015-05-18 2019-01-01 Lam Research Corporation Feature fill with multi-stage nucleation inhibition
US9978605B2 (en) 2015-05-27 2018-05-22 Lam Research Corporation Method of forming low resistivity fluorine free tungsten film without nucleation
US9754824B2 (en) 2015-05-27 2017-09-05 Lam Research Corporation Tungsten films having low fluorine content
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US9978610B2 (en) 2015-08-21 2018-05-22 Lam Research Corporation Pulsing RF power in etch process to enhance tungsten gapfill performance
JP6545094B2 (ja) * 2015-12-17 2019-07-17 東京エレクトロン株式会社 成膜方法及び成膜装置
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
US10211099B2 (en) 2016-12-19 2019-02-19 Lam Research Corporation Chamber conditioning for remote plasma process
JP6728087B2 (ja) * 2017-02-22 2020-07-22 東京エレクトロン株式会社 成膜方法及び成膜装置
KR20250073535A (ko) 2017-08-14 2025-05-27 램 리써치 코포레이션 3차원 수직 nand 워드라인을 위한 금속 충진 프로세스
WO2019213604A1 (en) 2018-05-03 2019-11-07 Lam Research Corporation Method of depositing tungsten and other metals in 3d nand structures
KR102828798B1 (ko) 2018-12-05 2025-07-02 램 리써치 코포레이션 보이드 프리 (void free) 저응력 (low stress) 충진
JP7649741B2 (ja) 2018-12-14 2025-03-21 ラム リサーチ コーポレーション 3d nand構造上の原子層堆積
SG11202108725XA (en) 2019-02-13 2021-09-29 Lam Res Corp Tungsten feature fill with inhibition control
KR102685504B1 (ko) 2019-03-20 2024-07-17 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 방법, 기판 처리 장치 및 프로그램
US12002679B2 (en) 2019-04-11 2024-06-04 Lam Research Corporation High step coverage tungsten deposition
JP2022533834A (ja) 2019-05-22 2022-07-26 ラム リサーチ コーポレーション 核生成のないタングステン堆積
US12077858B2 (en) 2019-08-12 2024-09-03 Lam Research Corporation Tungsten deposition
JP2021150526A (ja) 2020-03-19 2021-09-27 キオクシア株式会社 半導体装置、半導体記憶装置、及び、半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6096931A (ja) * 1983-11-01 1985-05-30 Matsushita Electric Ind Co Ltd 制御電圧発生装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6091631A (ja) * 1983-10-25 1985-05-23 Toshiba Corp 半導体装置の製造方法
JPS6231116A (ja) * 1985-08-02 1987-02-10 Toshiba Corp 半導体装置の製造方法
US5223455A (en) * 1987-07-10 1993-06-29 Kabushiki Kaisha Toshiba Method of forming refractory metal film
JP2720386B2 (ja) * 1988-02-05 1998-03-04 富士通株式会社 半導体装置の製造方法
JP2726438B2 (ja) * 1988-07-28 1998-03-11 株式会社東芝 薄膜形成装置
US4983543A (en) * 1988-09-07 1991-01-08 Fujitsu Limited Method of manufacturing a semiconductor integrated circuit having an interconnection wire embedded in a protective layer covering the semiconductor integrated circuit
DE68926656T2 (de) * 1988-11-21 1996-11-28 Toshiba Kawasaki Kk Verfahren zum Herstellen eines Halbleiterbauelementes
US5037775A (en) * 1988-11-30 1991-08-06 Mcnc Method for selectively depositing single elemental semiconductor material on substrates
US5112439A (en) * 1988-11-30 1992-05-12 Mcnc Method for selectively depositing material on substrates
US5043299B1 (en) * 1989-12-01 1997-02-25 Applied Materials Inc Process for selective deposition of tungsten on semiconductor wafer
JP3469251B2 (ja) * 1990-02-14 2003-11-25 株式会社東芝 半導体装置の製造方法
JPH07115130A (ja) * 1993-10-14 1995-05-02 Toshiba Corp 半導体装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6096931A (ja) * 1983-11-01 1985-05-30 Matsushita Electric Ind Co Ltd 制御電圧発生装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210092113A (ko) * 2020-01-15 2021-07-23 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체
KR102337523B1 (ko) 2020-01-15 2021-12-08 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체

Also Published As

Publication number Publication date
JPH0922896A (ja) 1997-01-21
US6013575A (en) 2000-01-11
DE19627017A1 (de) 1997-01-09
TW300325B (enExample) 1997-03-11

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