DE19627017A1 - Verfahren zur selektiven Ablagerung eines Metallfilms - Google Patents

Verfahren zur selektiven Ablagerung eines Metallfilms

Info

Publication number
DE19627017A1
DE19627017A1 DE19627017A DE19627017A DE19627017A1 DE 19627017 A1 DE19627017 A1 DE 19627017A1 DE 19627017 A DE19627017 A DE 19627017A DE 19627017 A DE19627017 A DE 19627017A DE 19627017 A1 DE19627017 A1 DE 19627017A1
Authority
DE
Germany
Prior art keywords
vacuum chamber
substrate
gas
film
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19627017A
Other languages
German (de)
English (en)
Inventor
Hitoshi Itoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE19627017A1 publication Critical patent/DE19627017A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
DE19627017A 1995-07-07 1996-07-04 Verfahren zur selektiven Ablagerung eines Metallfilms Ceased DE19627017A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7172480A JPH0922896A (ja) 1995-07-07 1995-07-07 金属膜の選択的形成方法

Publications (1)

Publication Number Publication Date
DE19627017A1 true DE19627017A1 (de) 1997-01-09

Family

ID=15942777

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19627017A Ceased DE19627017A1 (de) 1995-07-07 1996-07-04 Verfahren zur selektiven Ablagerung eines Metallfilms

Country Status (5)

Country Link
US (1) US6013575A (enExample)
JP (1) JPH0922896A (enExample)
KR (1) KR100236626B1 (enExample)
DE (1) DE19627017A1 (enExample)
TW (1) TW300325B (enExample)

Cited By (38)

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EP1041614A1 (en) * 1999-03-29 2000-10-04 Lsi Logic Corporation Plasma cleaning process for openings formed in one or more low dielectric constant insulation layers over copper metallization integrated circuit structures
WO2001015220A1 (en) * 1999-08-24 2001-03-01 Asm America, Inc. Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
EP1050905A3 (en) * 1999-05-07 2001-09-12 Shinko Electric Industries Co. Ltd. Semiconductor device with insulating layer
EP0984488A3 (en) * 1998-08-31 2001-09-26 Nec Corporation Multilayer copper interconnect structure with copper oxide portions and manufacturing method thereof
US6482733B2 (en) 2000-05-15 2002-11-19 Asm Microchemistry Oy Protective layers prior to alternating layer deposition
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US6620670B2 (en) 2002-01-18 2003-09-16 Applied Materials, Inc. Process conditions and precursors for atomic layer deposition (ALD) of AL2O3
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US6660126B2 (en) 2001-03-02 2003-12-09 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6720027B2 (en) 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US6734020B2 (en) 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US6759325B2 (en) 2000-05-15 2004-07-06 Asm Microchemistry Oy Sealing porous structures
US6765178B2 (en) 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US6825447B2 (en) 2000-12-29 2004-11-30 Applied Materials, Inc. Apparatus and method for uniform substrate heating and contaminate collection
US6827978B2 (en) 2002-02-11 2004-12-07 Applied Materials, Inc. Deposition of tungsten films
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US6846516B2 (en) 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US6875271B2 (en) 2002-04-09 2005-04-05 Applied Materials, Inc. Simultaneous cyclical deposition in different processing regions
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US7094680B2 (en) 2001-02-02 2006-08-22 Applied Materials, Inc. Formation of a tantalum-nitride layer
US7094685B2 (en) 2002-01-26 2006-08-22 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US7102235B2 (en) 1999-10-15 2006-09-05 Asm International N.V. Conformal lining layers for damascene metallization
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US7595263B2 (en) 2003-06-18 2009-09-29 Applied Materials, Inc. Atomic layer deposition of barrier materials
US7732327B2 (en) 2000-06-28 2010-06-08 Applied Materials, Inc. Vapor deposition of tungsten materials
US7867914B2 (en) 2002-04-16 2011-01-11 Applied Materials, Inc. System and method for forming an integrated barrier layer
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US8334218B2 (en) 2005-03-15 2012-12-18 Asm America, Inc. Method of forming non-conformal layers

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US6136690A (en) 1998-02-13 2000-10-24 Micron Technology, Inc. In situ plasma pre-deposition wafer treatment in chemical vapor deposition technology for semiconductor integrated circuit applications
US6159852A (en) 1998-02-13 2000-12-12 Micron Technology, Inc. Method of depositing polysilicon, method of fabricating a field effect transistor, method of forming a contact to a substrate, method of forming a capacitor
US6797558B2 (en) * 2001-04-24 2004-09-28 Micron Technology, Inc. Methods of forming a capacitor with substantially selective deposite of polysilicon on a substantially crystalline capacitor dielectric layer
JP4724146B2 (ja) * 1999-01-08 2011-07-13 株式会社東芝 半導体装置
JP4672697B2 (ja) * 1999-01-08 2011-04-20 株式会社東芝 半導体装置の製造方法
US6245655B1 (en) * 1999-04-01 2001-06-12 Cvc Products, Inc. Method for planarized deposition of a material
JP4108228B2 (ja) * 1999-07-15 2008-06-25 富士通株式会社 半導体装置の製造方法
JP2001291720A (ja) * 2000-04-05 2001-10-19 Hitachi Ltd 半導体集積回路装置および半導体集積回路装置の製造方法
KR100467493B1 (ko) * 2001-06-16 2005-01-24 동부전자 주식회사 반도체 비아 홀 세정 공정에서의 불소 성분 제거 방법
DE60329292D1 (de) * 2002-03-08 2009-10-29 Canon Anelva Corp Verfahren und Vorrichtung zum Herstellen von Metall-Schichten
JP2008166062A (ja) * 2006-12-27 2008-07-17 Hitachi High-Technologies Corp 真空容器を持つ装置
US7772097B2 (en) * 2007-11-05 2010-08-10 Asm America, Inc. Methods of selectively depositing silicon-containing films
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US10256142B2 (en) 2009-08-04 2019-04-09 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US9653353B2 (en) 2009-08-04 2017-05-16 Novellus Systems, Inc. Tungsten feature fill
KR102100520B1 (ko) * 2012-03-27 2020-04-14 노벨러스 시스템즈, 인코포레이티드 핵생성 억제를 사용하는 텅스텐 피처 충진
US10381266B2 (en) 2012-03-27 2019-08-13 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US11437269B2 (en) 2012-03-27 2022-09-06 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
CN103337467B (zh) * 2013-06-27 2016-03-02 上海华力微电子有限公司 接触孔之底金属层去除量的量测方法
US9748137B2 (en) 2014-08-21 2017-08-29 Lam Research Corporation Method for void-free cobalt gap fill
US9997405B2 (en) 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
US9953984B2 (en) 2015-02-11 2018-04-24 Lam Research Corporation Tungsten for wordline applications
US10170320B2 (en) 2015-05-18 2019-01-01 Lam Research Corporation Feature fill with multi-stage nucleation inhibition
US9978605B2 (en) 2015-05-27 2018-05-22 Lam Research Corporation Method of forming low resistivity fluorine free tungsten film without nucleation
US9754824B2 (en) 2015-05-27 2017-09-05 Lam Research Corporation Tungsten films having low fluorine content
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US9978610B2 (en) 2015-08-21 2018-05-22 Lam Research Corporation Pulsing RF power in etch process to enhance tungsten gapfill performance
JP6545094B2 (ja) * 2015-12-17 2019-07-17 東京エレクトロン株式会社 成膜方法及び成膜装置
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
US10211099B2 (en) 2016-12-19 2019-02-19 Lam Research Corporation Chamber conditioning for remote plasma process
JP6728087B2 (ja) * 2017-02-22 2020-07-22 東京エレクトロン株式会社 成膜方法及び成膜装置
KR20250073535A (ko) 2017-08-14 2025-05-27 램 리써치 코포레이션 3차원 수직 nand 워드라인을 위한 금속 충진 프로세스
WO2019213604A1 (en) 2018-05-03 2019-11-07 Lam Research Corporation Method of depositing tungsten and other metals in 3d nand structures
KR102828798B1 (ko) 2018-12-05 2025-07-02 램 리써치 코포레이션 보이드 프리 (void free) 저응력 (low stress) 충진
JP7649741B2 (ja) 2018-12-14 2025-03-21 ラム リサーチ コーポレーション ３ｄ ｎａｎｄ構造上の原子層堆積
SG11202108725XA (en) 2019-02-13 2021-09-29 Lam Res Corp Tungsten feature fill with inhibition control
KR102685504B1 (ko) 2019-03-20 2024-07-17 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 방법, 기판 처리 장치 및 프로그램
US12002679B2 (en) 2019-04-11 2024-06-04 Lam Research Corporation High step coverage tungsten deposition
JP2022533834A (ja) 2019-05-22 2022-07-26 ラム リサーチ コーポレーション 核生成のないタングステン堆積
US12077858B2 (en) 2019-08-12 2024-09-03 Lam Research Corporation Tungsten deposition
JP7118099B2 (ja) * 2020-01-15 2022-08-15 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置およびプログラム
JP2021150526A (ja) 2020-03-19 2021-09-27 キオクシア株式会社 半導体装置、半導体記憶装置、及び、半導体装置の製造方法

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Cited By (73)

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EP0984488A3 (en) * 1998-08-31 2001-09-26 Nec Corporation Multilayer copper interconnect structure with copper oxide portions and manufacturing method thereof
US6573607B2 (en) 1998-08-31 2003-06-03 Nec Electronics Corporation Semiconductor device and manufacturing method thereof
EP1041614A1 (en) * 1999-03-29 2000-10-04 Lsi Logic Corporation Plasma cleaning process for openings formed in one or more low dielectric constant insulation layers over copper metallization integrated circuit structures
EP1050905A3 (en) * 1999-05-07 2001-09-12 Shinko Electric Industries Co. Ltd. Semiconductor device with insulating layer
US6664192B2 (en) * 1999-08-24 2003-12-16 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
WO2001015220A1 (en) * 1999-08-24 2001-03-01 Asm America, Inc. Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
US6391785B1 (en) 1999-08-24 2002-05-21 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
US6852635B2 (en) 1999-08-24 2005-02-08 Interuniversitair Nizroelecmica Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
US7102235B2 (en) 1999-10-15 2006-09-05 Asm International N.V. Conformal lining layers for damascene metallization
US6686271B2 (en) 2000-05-15 2004-02-03 Asm International N.V. Protective layers prior to alternating layer deposition
US6699783B2 (en) 2000-05-15 2004-03-02 Asm International N.V. Method for controlling conformality with alternating layer deposition
US6482733B2 (en) 2000-05-15 2002-11-19 Asm Microchemistry Oy Protective layers prior to alternating layer deposition
US6759325B2 (en) 2000-05-15 2004-07-06 Asm Microchemistry Oy Sealing porous structures
US7501344B2 (en) 2000-06-27 2009-03-10 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7501343B2 (en) 2000-06-27 2009-03-10 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7208413B2 (en) 2000-06-27 2007-04-24 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
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US7235486B2 (en) 2000-06-28 2007-06-26 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7846840B2 (en) 2000-06-28 2010-12-07 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US7745333B2 (en) 2000-06-28 2010-06-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7115494B2 (en) 2000-06-28 2006-10-03 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US6855368B1 (en) 2000-06-28 2005-02-15 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
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US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
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US7094680B2 (en) 2001-02-02 2006-08-22 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6660126B2 (en) 2001-03-02 2003-12-09 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US9587310B2 (en) 2001-03-02 2017-03-07 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US7201803B2 (en) 2001-03-07 2007-04-10 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
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US7695563B2 (en) 2001-07-13 2010-04-13 Applied Materials, Inc. Pulsed deposition process for tungsten nucleation
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US7905959B2 (en) 2001-07-16 2011-03-15 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US10280509B2 (en) 2001-07-16 2019-05-07 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US7494908B2 (en) 2001-09-26 2009-02-24 Applied Materials, Inc. Apparatus for integration of barrier layer and seed layer
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US7352048B2 (en) 2001-09-26 2008-04-01 Applied Materials, Inc. Integration of barrier layer and seed layer
US8668776B2 (en) 2001-10-26 2014-03-11 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US7780788B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6620670B2 (en) 2002-01-18 2003-09-16 Applied Materials, Inc. Process conditions and precursors for atomic layer deposition (ALD) of AL2O3
US7779784B2 (en) 2002-01-26 2010-08-24 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US7732325B2 (en) 2002-01-26 2010-06-08 Applied Materials, Inc. Plasma-enhanced cyclic layer deposition process for barrier layers
US7473638B2 (en) 2002-01-26 2009-01-06 Applied Materials, Inc. Plasma-enhanced cyclic layer deposition process for barrier layers
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US7094685B2 (en) 2002-01-26 2006-08-22 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6827978B2 (en) 2002-02-11 2004-12-07 Applied Materials, Inc. Deposition of tungsten films
US7429516B2 (en) 2002-02-26 2008-09-30 Applied Materials, Inc. Tungsten nitride atomic layer deposition processes
US7115499B2 (en) 2002-02-26 2006-10-03 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7745329B2 (en) 2002-02-26 2010-06-29 Applied Materials, Inc. Tungsten nitride atomic layer deposition processes
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US6846516B2 (en) 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US6720027B2 (en) 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US6875271B2 (en) 2002-04-09 2005-04-05 Applied Materials, Inc. Simultaneous cyclical deposition in different processing regions
US7867914B2 (en) 2002-04-16 2011-01-11 Applied Materials, Inc. System and method for forming an integrated barrier layer
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7595263B2 (en) 2003-06-18 2009-09-29 Applied Materials, Inc. Atomic layer deposition of barrier materials
US8513116B2 (en) 2005-01-19 2013-08-20 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US8211799B2 (en) 2005-01-19 2012-07-03 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US8334218B2 (en) 2005-03-15 2012-12-18 Asm America, Inc. Method of forming non-conformal layers

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US6013575A (en) 2000-01-11
KR100236626B1 (ko) 2000-01-15
TW300325B (enExample) 1997-03-11

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