DE69023644T2 - Verfahren zur herstellung eines siliziumoxydfilmes. - Google Patents

Verfahren zur herstellung eines siliziumoxydfilmes.

Info

Publication number
DE69023644T2
DE69023644T2 DE69023644T DE69023644T DE69023644T2 DE 69023644 T2 DE69023644 T2 DE 69023644T2 DE 69023644 T DE69023644 T DE 69023644T DE 69023644 T DE69023644 T DE 69023644T DE 69023644 T2 DE69023644 T2 DE 69023644T2
Authority
DE
Germany
Prior art keywords
oxide film
oxygen
producing
silicon oxide
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69023644T
Other languages
English (en)
Other versions
DE69023644D1 (de
Inventor
Tadahiro Ohmi
Mizuho Morita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of DE69023644D1 publication Critical patent/DE69023644D1/de
Publication of DE69023644T2 publication Critical patent/DE69023644T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31683—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/903—Catalyst aided deposition
DE69023644T 1989-05-07 1990-05-07 Verfahren zur herstellung eines siliziumoxydfilmes. Expired - Fee Related DE69023644T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11395889 1989-05-07
PCT/JP1990/000581 WO1990013911A1 (en) 1989-05-07 1990-05-07 Method of forming oxide film

Publications (2)

Publication Number Publication Date
DE69023644D1 DE69023644D1 (de) 1995-12-21
DE69023644T2 true DE69023644T2 (de) 1996-04-18

Family

ID=14625472

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69023644T Expired - Fee Related DE69023644T2 (de) 1989-05-07 1990-05-07 Verfahren zur herstellung eines siliziumoxydfilmes.

Country Status (7)

Country Link
US (1) US5360768A (de)
EP (1) EP0471845B1 (de)
JP (1) JP3122125B2 (de)
KR (1) KR920702020A (de)
AT (1) ATE130466T1 (de)
DE (1) DE69023644T2 (de)
WO (1) WO1990013911A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09251995A (ja) * 1989-05-07 1997-09-22 Tadahiro Omi 絶縁酸化膜の形成方法
CN1075243C (zh) 1994-12-28 2001-11-21 松下电器产业株式会社 集成电路用电容元件及其制造方法
US6204111B1 (en) 1994-12-28 2001-03-20 Matsushita Electronics Corporation Fabrication method of capacitor for integrated circuit
JP3169114B2 (ja) * 1995-05-29 2001-05-21 信越半導体株式会社 単結晶薄膜の製造方法
EP0800704B1 (de) * 1995-10-26 2003-01-08 Koninklijke Philips Electronics N.V. Verfahren zur herstellung einer halbleiteranordnung
TW471068B (en) * 1997-03-05 2002-01-01 Hitachi Ltd Method for fabricating semiconductor integrated circuit device with insulation film
KR100468665B1 (ko) * 1997-05-16 2005-08-29 삼성전자주식회사 산화막형성방법
JP3808975B2 (ja) * 1997-06-17 2006-08-16 忠弘 大見 半導体製造用水分の発生方法
JPH11283924A (ja) * 1998-03-27 1999-10-15 Super Silicon Kenkyusho:Kk 半導体ウエハ製造方法
US6644324B1 (en) * 2000-03-06 2003-11-11 Cymer, Inc. Laser discharge chamber passivation by plasma
GB2370043A (en) * 2000-12-12 2002-06-19 Mitel Corp Chemical treatment of silica films
JP4095326B2 (ja) * 2002-03-29 2008-06-04 株式会社東芝 半導体装置の製造方法及び半導体装置
JP4164324B2 (ja) * 2002-09-19 2008-10-15 スパンション エルエルシー 半導体装置の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1189655B (de) * 1960-05-25 1965-03-25 Siemens Ag Verfahren zum Erzeugen einer stabilisierenden Oxydschicht auf einer Halbleiteroberflaeche
US3850687A (en) * 1971-05-26 1974-11-26 Rca Corp Method of densifying silicate glasses
CA954426A (en) * 1971-06-25 1974-09-10 Robert E. Albano Chemical growth of insulating layers on gallium arsenide
US3791862A (en) * 1971-12-22 1974-02-12 Bell Telephone Labor Inc Chemical growth of insulating layers on gallium arsenide
US3852120A (en) * 1973-05-29 1974-12-03 Ibm Method for manufacturing ion implanted insulated gate field effect semiconductor transistor devices
US3925107A (en) * 1974-11-11 1975-12-09 Ibm Method of stabilizing mos devices
JPS51114875A (en) * 1975-04-01 1976-10-08 Mitsubishi Electric Corp Semiconductor device manufacturing method
JPS5275181A (en) * 1975-12-13 1977-06-23 Sony Corp Formation of oxide film
JPS5466075A (en) * 1977-11-04 1979-05-28 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS55121653A (en) * 1979-03-14 1980-09-18 Fujitsu Ltd Method of treating surface of semiconductor substrate
JPS6329516A (ja) * 1986-07-22 1988-02-08 Mitsubishi Electric Corp 半導体装置の製造方法
US4784975A (en) * 1986-10-23 1988-11-15 International Business Machines Corporation Post-oxidation anneal of silicon dioxide

Also Published As

Publication number Publication date
JP3122125B2 (ja) 2001-01-09
EP0471845A4 (en) 1992-04-22
ATE130466T1 (de) 1995-12-15
EP0471845B1 (de) 1995-11-15
WO1990013911A1 (en) 1990-11-15
US5360768A (en) 1994-11-01
EP0471845A1 (de) 1992-02-26
KR920702020A (ko) 1992-08-12
DE69023644D1 (de) 1995-12-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee