CA954426A - Chemical growth of insulating layers on gallium arsenide - Google Patents

Chemical growth of insulating layers on gallium arsenide

Info

Publication number
CA954426A
CA954426A CA138,932A CA138932A CA954426A CA 954426 A CA954426 A CA 954426A CA 138932 A CA138932 A CA 138932A CA 954426 A CA954426 A CA 954426A
Authority
CA
Canada
Prior art keywords
insulating layers
gallium arsenide
chemical growth
growth
chemical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA138,932A
Other versions
CA138932S (en
Inventor
Robert E. Albano
John C. Dyment
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of CA954426A publication Critical patent/CA954426A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02241—III-V semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Chemically Coating (AREA)
CA138,932A 1971-06-25 1972-04-05 Chemical growth of insulating layers on gallium arsenide Expired CA954426A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15688671A 1971-06-25 1971-06-25
US21099271A 1971-12-22 1971-12-22

Publications (1)

Publication Number Publication Date
CA954426A true CA954426A (en) 1974-09-10

Family

ID=26853613

Family Applications (1)

Application Number Title Priority Date Filing Date
CA138,932A Expired CA954426A (en) 1971-06-25 1972-04-05 Chemical growth of insulating layers on gallium arsenide

Country Status (8)

Country Link
BE (1) BE785330A (en)
CA (1) CA954426A (en)
DE (1) DE2230150A1 (en)
FR (1) FR2143453A1 (en)
GB (1) GB1378200A (en)
IT (1) IT966929B (en)
NL (1) NL7208417A (en)
SE (1) SE379063B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2413608C2 (en) * 1974-03-21 1982-09-02 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Method for manufacturing a semiconductor component
US5360768A (en) * 1989-05-07 1994-11-01 Tadahiro Ohmi Method of forming oxide film

Also Published As

Publication number Publication date
IT966929B (en) 1974-02-20
GB1378200A (en) 1974-12-27
BE785330A (en) 1972-10-16
SE379063B (en) 1975-09-22
FR2143453A1 (en) 1973-02-02
DE2230150A1 (en) 1973-01-11
NL7208417A (en) 1972-12-28

Similar Documents

Publication Publication Date Title
CA968259A (en) Iii-v compound on insulating substrate
CA990186A (en) Method of depositing epitaxial semiconductor layers from the liquid phase
CA954421A (en) Semiconductor epitaxial growth from solution
CA976365A (en) Methods of producing superconductors
CA1002433A (en) Monocrystals of iii-v semiconductor compounds
CA921374A (en) Removal of projections on epitaxial layers
CA954426A (en) Chemical growth of insulating layers on gallium arsenide
CA940805A (en) Fabrication of gallium arsenide devices
CA955542A (en) Locking devices
CA1014693A (en) Organic semiconductors
AU461502B2 (en) Controlled oxidation of ethylene
CA969374A (en) Separation of gallium
CA983684A (en) Superconductors
CA938738A (en) Superconductors
AU457349B2 (en) Preservation of beer
AU4778572A (en) Preservation of vegetables
CA888987A (en) Growth of insulating films
AU461399B2 (en) Method of obtaining gallium aluminium arsenide foran electroluminescent diode
CA872072A (en) Expansible carrying case with band latch
CA1003850A (en) Dehydrogenation of organic compounds
CA863528A (en) Semiconductor networks
CA848403A (en) Epitaxially grown layers of binary semiconductor compounds
CA863542A (en) Method of making semiconductor devices
CA888446A (en) Manufacture of composite semiconductor devices
CA888442A (en) Methods of manufacturing semiconductor devices