JPS6450534A - Method of forming oxide film of element semiconductor - Google Patents
Method of forming oxide film of element semiconductorInfo
- Publication number
- JPS6450534A JPS6450534A JP20751587A JP20751587A JPS6450534A JP S6450534 A JPS6450534 A JP S6450534A JP 20751587 A JP20751587 A JP 20751587A JP 20751587 A JP20751587 A JP 20751587A JP S6450534 A JPS6450534 A JP S6450534A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- element semiconductor
- oxide film
- semiconductor substrate
- vacuum vessel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To provide a high quality oxide film with a thickness of 100Angstrom or below on the surface of a substrate, by heating and removing a protective oxide film on the surface of the substrate within a vacuum vessel, setting a temperature of the substrate at a predetermined value or below and introducing oxygen gas under a particular pressure to over the substrate for a particular period of time for causing tunnel oxidation on the substrate. CONSTITUTION:An element semiconductor substrate 4 which has been chemically washed is set in a vacuum vessel having a background pressure of 1X10<-5> pascals or below and heated to 700-850 deg.C so as to remove a protective oxide film from the surface of the element semiconductor substrate 4 and to clean the surface of the substrate 4. Subsequently, a temperature of the element semiconductor substrate 4 is set at 200 deg.C or below and oxygen gas is introduced over the element semiconductor substrate 4 for 10-10000 seconds such that the pressure of 102 10<-3> pascals is established within the vacuum vessel 3. Thereby, an oxide film of an element semiconductor having a thickness of 100Angstrom or below is formed on the surface of the element semiconductor substrate 4 with a precision of single molecule layer, by utilizing the tunnel oxidation phenomenon. Said tunnel oxidation is relialized for example by applying a positive bias voltage of 100V or below to the substrate 4.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20751587A JPS6450534A (en) | 1987-08-21 | 1987-08-21 | Method of forming oxide film of element semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20751587A JPS6450534A (en) | 1987-08-21 | 1987-08-21 | Method of forming oxide film of element semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6450534A true JPS6450534A (en) | 1989-02-27 |
Family
ID=16540993
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20751587A Pending JPS6450534A (en) | 1987-08-21 | 1987-08-21 | Method of forming oxide film of element semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6450534A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02248044A (en) * | 1989-03-22 | 1990-10-03 | Nec Corp | Formation of oxide film |
US6287682B1 (en) | 1993-11-30 | 2001-09-11 | Kennametal Pc Inc. | Diamond coated tools and process for making |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5842239A (en) * | 1981-09-07 | 1983-03-11 | Semiconductor Energy Lab Co Ltd | Plasma oxidization |
JPS58192330A (en) * | 1982-05-06 | 1983-11-09 | Oak Seisakusho:Kk | Oxidation treating method for surface of silicon wafer |
JPS60145626A (en) * | 1984-01-10 | 1985-08-01 | Nec Corp | Surface cleaning method |
JPS6240774A (en) * | 1985-08-16 | 1987-02-21 | Nippon Denso Co Ltd | Non-volatile semiconductor memory |
-
1987
- 1987-08-21 JP JP20751587A patent/JPS6450534A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5842239A (en) * | 1981-09-07 | 1983-03-11 | Semiconductor Energy Lab Co Ltd | Plasma oxidization |
JPS58192330A (en) * | 1982-05-06 | 1983-11-09 | Oak Seisakusho:Kk | Oxidation treating method for surface of silicon wafer |
JPS60145626A (en) * | 1984-01-10 | 1985-08-01 | Nec Corp | Surface cleaning method |
JPS6240774A (en) * | 1985-08-16 | 1987-02-21 | Nippon Denso Co Ltd | Non-volatile semiconductor memory |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02248044A (en) * | 1989-03-22 | 1990-10-03 | Nec Corp | Formation of oxide film |
US6287682B1 (en) | 1993-11-30 | 2001-09-11 | Kennametal Pc Inc. | Diamond coated tools and process for making |
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