JPS6450534A - Method of forming oxide film of element semiconductor - Google Patents

Method of forming oxide film of element semiconductor

Info

Publication number
JPS6450534A
JPS6450534A JP20751587A JP20751587A JPS6450534A JP S6450534 A JPS6450534 A JP S6450534A JP 20751587 A JP20751587 A JP 20751587A JP 20751587 A JP20751587 A JP 20751587A JP S6450534 A JPS6450534 A JP S6450534A
Authority
JP
Japan
Prior art keywords
substrate
element semiconductor
oxide film
semiconductor substrate
vacuum vessel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20751587A
Other languages
Japanese (ja)
Inventor
Kenji Aoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP20751587A priority Critical patent/JPS6450534A/en
Publication of JPS6450534A publication Critical patent/JPS6450534A/en
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To provide a high quality oxide film with a thickness of 100Angstrom or below on the surface of a substrate, by heating and removing a protective oxide film on the surface of the substrate within a vacuum vessel, setting a temperature of the substrate at a predetermined value or below and introducing oxygen gas under a particular pressure to over the substrate for a particular period of time for causing tunnel oxidation on the substrate. CONSTITUTION:An element semiconductor substrate 4 which has been chemically washed is set in a vacuum vessel having a background pressure of 1X10<-5> pascals or below and heated to 700-850 deg.C so as to remove a protective oxide film from the surface of the element semiconductor substrate 4 and to clean the surface of the substrate 4. Subsequently, a temperature of the element semiconductor substrate 4 is set at 200 deg.C or below and oxygen gas is introduced over the element semiconductor substrate 4 for 10-10000 seconds such that the pressure of 102 10<-3> pascals is established within the vacuum vessel 3. Thereby, an oxide film of an element semiconductor having a thickness of 100Angstrom or below is formed on the surface of the element semiconductor substrate 4 with a precision of single molecule layer, by utilizing the tunnel oxidation phenomenon. Said tunnel oxidation is relialized for example by applying a positive bias voltage of 100V or below to the substrate 4.
JP20751587A 1987-08-21 1987-08-21 Method of forming oxide film of element semiconductor Pending JPS6450534A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20751587A JPS6450534A (en) 1987-08-21 1987-08-21 Method of forming oxide film of element semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20751587A JPS6450534A (en) 1987-08-21 1987-08-21 Method of forming oxide film of element semiconductor

Publications (1)

Publication Number Publication Date
JPS6450534A true JPS6450534A (en) 1989-02-27

Family

ID=16540993

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20751587A Pending JPS6450534A (en) 1987-08-21 1987-08-21 Method of forming oxide film of element semiconductor

Country Status (1)

Country Link
JP (1) JPS6450534A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02248044A (en) * 1989-03-22 1990-10-03 Nec Corp Formation of oxide film
US6287682B1 (en) 1993-11-30 2001-09-11 Kennametal Pc Inc. Diamond coated tools and process for making

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5842239A (en) * 1981-09-07 1983-03-11 Semiconductor Energy Lab Co Ltd Plasma oxidization
JPS58192330A (en) * 1982-05-06 1983-11-09 Oak Seisakusho:Kk Oxidation treating method for surface of silicon wafer
JPS60145626A (en) * 1984-01-10 1985-08-01 Nec Corp Surface cleaning method
JPS6240774A (en) * 1985-08-16 1987-02-21 Nippon Denso Co Ltd Non-volatile semiconductor memory

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5842239A (en) * 1981-09-07 1983-03-11 Semiconductor Energy Lab Co Ltd Plasma oxidization
JPS58192330A (en) * 1982-05-06 1983-11-09 Oak Seisakusho:Kk Oxidation treating method for surface of silicon wafer
JPS60145626A (en) * 1984-01-10 1985-08-01 Nec Corp Surface cleaning method
JPS6240774A (en) * 1985-08-16 1987-02-21 Nippon Denso Co Ltd Non-volatile semiconductor memory

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02248044A (en) * 1989-03-22 1990-10-03 Nec Corp Formation of oxide film
US6287682B1 (en) 1993-11-30 2001-09-11 Kennametal Pc Inc. Diamond coated tools and process for making

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