ATE130466T1 - Verfahren zur herstellung eines siliziumoxydfilmes. - Google Patents

Verfahren zur herstellung eines siliziumoxydfilmes.

Info

Publication number
ATE130466T1
ATE130466T1 AT90907409T AT90907409T ATE130466T1 AT E130466 T1 ATE130466 T1 AT E130466T1 AT 90907409 T AT90907409 T AT 90907409T AT 90907409 T AT90907409 T AT 90907409T AT E130466 T1 ATE130466 T1 AT E130466T1
Authority
AT
Austria
Prior art keywords
oxygen
oxide film
producing
film
substrate
Prior art date
Application number
AT90907409T
Other languages
English (en)
Inventor
Tadahiro Ohmi
Mizuho Morita
Original Assignee
Tadahiro Ohmi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tadahiro Ohmi filed Critical Tadahiro Ohmi
Application granted granted Critical
Publication of ATE130466T1 publication Critical patent/ATE130466T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31683—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/903—Catalyst aided deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Glass Compositions (AREA)
  • Silicon Compounds (AREA)
  • Chemically Coating (AREA)
AT90907409T 1989-05-07 1990-05-07 Verfahren zur herstellung eines siliziumoxydfilmes. ATE130466T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11395889 1989-05-07

Publications (1)

Publication Number Publication Date
ATE130466T1 true ATE130466T1 (de) 1995-12-15

Family

ID=14625472

Family Applications (1)

Application Number Title Priority Date Filing Date
AT90907409T ATE130466T1 (de) 1989-05-07 1990-05-07 Verfahren zur herstellung eines siliziumoxydfilmes.

Country Status (7)

Country Link
US (1) US5360768A (de)
EP (1) EP0471845B1 (de)
JP (1) JP3122125B2 (de)
KR (1) KR920702020A (de)
AT (1) ATE130466T1 (de)
DE (1) DE69023644T2 (de)
WO (1) WO1990013911A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09251995A (ja) * 1989-05-07 1997-09-22 Tadahiro Omi 絶縁酸化膜の形成方法
US6204111B1 (en) 1994-12-28 2001-03-20 Matsushita Electronics Corporation Fabrication method of capacitor for integrated circuit
CN1075243C (zh) * 1994-12-28 2001-11-21 松下电器产业株式会社 集成电路用电容元件及其制造方法
JP3169114B2 (ja) * 1995-05-29 2001-05-21 信越半導体株式会社 単結晶薄膜の製造方法
JPH10513013A (ja) * 1995-10-26 1998-12-08 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 半導体デバイスの製造方法
TWI250583B (en) * 1997-03-05 2006-03-01 Hitachi Ltd Manufacturing method for semiconductor integrated circuit device
KR100468665B1 (ko) * 1997-05-16 2005-08-29 삼성전자주식회사 산화막형성방법
JP3808975B2 (ja) * 1997-06-17 2006-08-16 忠弘 大見 半導体製造用水分の発生方法
JPH11283924A (ja) * 1998-03-27 1999-10-15 Super Silicon Kenkyusho:Kk 半導体ウエハ製造方法
US6644324B1 (en) 2000-03-06 2003-11-11 Cymer, Inc. Laser discharge chamber passivation by plasma
GB2370043A (en) 2000-12-12 2002-06-19 Mitel Corp Chemical treatment of silica films
JP4095326B2 (ja) 2002-03-29 2008-06-04 株式会社東芝 半導体装置の製造方法及び半導体装置
JP4164324B2 (ja) * 2002-09-19 2008-10-15 スパンション エルエルシー 半導体装置の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1189655B (de) * 1960-05-25 1965-03-25 Siemens Ag Verfahren zum Erzeugen einer stabilisierenden Oxydschicht auf einer Halbleiteroberflaeche
US3850687A (en) * 1971-05-26 1974-11-26 Rca Corp Method of densifying silicate glasses
CA954426A (en) * 1971-06-25 1974-09-10 Robert E. Albano Chemical growth of insulating layers on gallium arsenide
US3791862A (en) * 1971-12-22 1974-02-12 Bell Telephone Labor Inc Chemical growth of insulating layers on gallium arsenide
US3852120A (en) * 1973-05-29 1974-12-03 Ibm Method for manufacturing ion implanted insulated gate field effect semiconductor transistor devices
US3925107A (en) * 1974-11-11 1975-12-09 Ibm Method of stabilizing mos devices
JPS51114875A (en) * 1975-04-01 1976-10-08 Mitsubishi Electric Corp Semiconductor device manufacturing method
JPS5275181A (en) * 1975-12-13 1977-06-23 Sony Corp Formation of oxide film
JPS5466075A (en) * 1977-11-04 1979-05-28 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS55121653A (en) * 1979-03-14 1980-09-18 Fujitsu Ltd Method of treating surface of semiconductor substrate
JPS6329516A (ja) * 1986-07-22 1988-02-08 Mitsubishi Electric Corp 半導体装置の製造方法
US4784975A (en) * 1986-10-23 1988-11-15 International Business Machines Corporation Post-oxidation anneal of silicon dioxide

Also Published As

Publication number Publication date
JP3122125B2 (ja) 2001-01-09
EP0471845A1 (de) 1992-02-26
EP0471845B1 (de) 1995-11-15
DE69023644T2 (de) 1996-04-18
WO1990013911A1 (en) 1990-11-15
EP0471845A4 (en) 1992-04-22
DE69023644D1 (de) 1995-12-21
KR920702020A (ko) 1992-08-12
US5360768A (en) 1994-11-01

Similar Documents

Publication Publication Date Title
ATE130466T1 (de) Verfahren zur herstellung eines siliziumoxydfilmes.
ES2043826T3 (es) Metodo para deposicion de oxido de silicio aumentada en plasma.
ATE98702T1 (de) Gleichmaessiger, duenner diamantfilm sowie ein verfahren zu dessen herstellung.
ATE27206T1 (de) Verfahren zur herstellung von siliziumoxidschichten.
ATE242547T1 (de) Verfahren zur herstellung eines halbleitersubstrats
DK0590467T3 (da) Fremgangsmåde til fremstilling af ridsefaste siliciumoxidlag på plast ved plasma-coatning
DE69326651D1 (de) Verfahren zur Herstellung von Mustern
DE69403918D1 (de) Verfahren zur Herstellung eines Magnetkopfes mit Halbleiter-Feld-Detektor und auf diese Weise hergestellter Kopf
DE69231985D1 (de) Verfahren zur Herstellung eines kristallinen Gold-Filmes
AU572004B2 (en) Catalyst of cobalt on silica treated with silicon compound
EP0277555A3 (en) Copolymers with 0-nitrocarbinol ester groups, and process for preparing two-layer resists and semiconductor devices
PT95436A (pt) Processo de producao de uma pelicula depositada e de producao de um dispositivo semicondutor
JPS57164454A (en) Treating method for surface of glass substrate for optical recording medium
ATE78367T1 (de) Verfahren zur herstellung einer schicht aus einem metalloxidischen supraleitermaterial mit hoher sprungtemperatur und vorrichtung zur durchfuehrung des verfahrens.
JPS56125434A (en) Surface treatment of molded article
JPS6481314A (en) Formation of doping silicon thin film
JPS6450534A (en) Method of forming oxide film of element semiconductor
JPS5633840A (en) Manufacture of semiconductor device
JPS57117245A (en) Manufacture of semiconductor substrate
JPS57106041A (en) Manufacture of semiconductor crystal
JPS645011A (en) Forming method for semiconductor film
DE3862848D1 (de) Verfahren zur herstellung von carbonsaeurechloriden.
JPS569210A (en) Method for forming thermally oxidized film
JPS6422935A (en) Production of molded plastic body coated with silicon dioxide
JPS56131935A (en) Heat treatment of semiconductor substrate

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties