ATE98702T1 - Gleichmaessiger, duenner diamantfilm sowie ein verfahren zu dessen herstellung. - Google Patents
Gleichmaessiger, duenner diamantfilm sowie ein verfahren zu dessen herstellung.Info
- Publication number
- ATE98702T1 ATE98702T1 AT89310880T AT89310880T ATE98702T1 AT E98702 T1 ATE98702 T1 AT E98702T1 AT 89310880 T AT89310880 T AT 89310880T AT 89310880 T AT89310880 T AT 89310880T AT E98702 T1 ATE98702 T1 AT E98702T1
- Authority
- AT
- Austria
- Prior art keywords
- diamond film
- thin diamond
- uniform
- production
- phase
- Prior art date
Links
- 229910003460 diamond Inorganic materials 0.000 title abstract 3
- 239000010432 diamond Substances 0.000 title abstract 3
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/272—Diamond only using DC, AC or RF discharges
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US26088788A | 1988-10-21 | 1988-10-21 | |
EP89310880A EP0365366B1 (de) | 1988-10-21 | 1989-10-23 | Gleichmässiger, dünner Diamantfilm sowie ein Verfahren zu dessen Herstellung |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE98702T1 true ATE98702T1 (de) | 1994-01-15 |
Family
ID=22991068
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT89310880T ATE98702T1 (de) | 1988-10-21 | 1989-10-23 | Gleichmaessiger, duenner diamantfilm sowie ein verfahren zu dessen herstellung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5607723A (de) |
EP (1) | EP0365366B1 (de) |
JP (1) | JPH02199099A (de) |
AT (1) | ATE98702T1 (de) |
DE (1) | DE68911469T2 (de) |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0470531B1 (de) * | 1990-08-07 | 1994-04-20 | Sumitomo Electric Industries, Ltd. | Verfahren zur Diamantenherstellung |
JP3171590B2 (ja) * | 1990-08-28 | 2001-05-28 | 住友電気工業株式会社 | X線マスクとその製造方法 |
US5258091A (en) * | 1990-09-18 | 1993-11-02 | Sumitomo Electric Industries, Ltd. | Method of producing X-ray window |
JP3026284B2 (ja) * | 1990-09-18 | 2000-03-27 | 住友電気工業株式会社 | X線窓材とその製造方法 |
US5310512A (en) * | 1990-11-15 | 1994-05-10 | Norton Company | Method for producing synthetic diamond structures |
CA2076086A1 (en) * | 1991-09-27 | 1993-03-28 | Randall J. Kehl | Method for obtaining thick, adherent diamond coatings using metal interface screens |
DE4219436C2 (de) * | 1992-06-13 | 1994-11-10 | Fraunhofer Ges Forschung | Verfahren zur Abscheidung glatter polykristalliner Schichten |
JP3724848B2 (ja) * | 1995-07-14 | 2005-12-07 | 則夫 岡田 | 光学用窓 |
JP3125046B2 (ja) * | 1997-11-21 | 2001-01-15 | 工業技術院長 | ダイヤモンド単結晶薄膜製造方法 |
US6214706B1 (en) * | 1998-08-28 | 2001-04-10 | Mv Systems, Inc. | Hot wire chemical vapor deposition method and apparatus using graphite hot rods |
US6964731B1 (en) | 1998-12-21 | 2005-11-15 | Cardinal Cg Company | Soil-resistant coating for glass surfaces |
US6974629B1 (en) | 1999-08-06 | 2005-12-13 | Cardinal Cg Company | Low-emissivity, soil-resistant coating for glass surfaces |
US6660365B1 (en) | 1998-12-21 | 2003-12-09 | Cardinal Cg Company | Soil-resistant coating for glass surfaces |
US6508911B1 (en) | 1999-08-16 | 2003-01-21 | Applied Materials Inc. | Diamond coated parts in a plasma reactor |
DE10050811A1 (de) | 2000-10-13 | 2002-04-18 | Philips Corp Intellectual Pty | Elektronenstrahltransparentes Fenster |
KR100414046B1 (ko) * | 2001-02-23 | 2004-01-13 | 노정희 | 엑스레이 그리드의 납 배열구조 |
US7501330B2 (en) * | 2002-12-05 | 2009-03-10 | Intel Corporation | Methods of forming a high conductivity diamond film and structures formed thereby |
US7294404B2 (en) * | 2003-12-22 | 2007-11-13 | Cardinal Cg Company | Graded photocatalytic coatings |
DE102004013620B4 (de) * | 2004-03-19 | 2008-12-04 | GE Homeland Protection, Inc., Newark | Elektronenfenster für eine Flüssigmetallanode, Flüssigmetallanode, Röntgenstrahler und Verfahren zum Betrieb eines solchen Röntgenstrahlers |
US7713632B2 (en) | 2004-07-12 | 2010-05-11 | Cardinal Cg Company | Low-maintenance coatings |
US7923114B2 (en) * | 2004-12-03 | 2011-04-12 | Cardinal Cg Company | Hydrophilic coatings, methods for depositing hydrophilic coatings, and improved deposition technology for thin films |
US8092660B2 (en) * | 2004-12-03 | 2012-01-10 | Cardinal Cg Company | Methods and equipment for depositing hydrophilic coatings, and deposition technologies for thin films |
WO2007124291A2 (en) | 2006-04-19 | 2007-11-01 | Cardinal Cg Company | Opposed functional coatings having comparable single surface reflectances |
US20080011599A1 (en) | 2006-07-12 | 2008-01-17 | Brabender Dennis M | Sputtering apparatus including novel target mounting and/or control |
US20110121179A1 (en) * | 2007-06-01 | 2011-05-26 | Liddiard Steven D | X-ray window with beryllium support structure |
US7737424B2 (en) * | 2007-06-01 | 2010-06-15 | Moxtek, Inc. | X-ray window with grid structure |
US20080296479A1 (en) * | 2007-06-01 | 2008-12-04 | Anderson Eric C | Polymer X-Ray Window with Diamond Support Structure |
US7709820B2 (en) * | 2007-06-01 | 2010-05-04 | Moxtek, Inc. | Radiation window with coated silicon support structure |
KR20100037615A (ko) * | 2007-07-09 | 2010-04-09 | 브라이엄 영 유니버시티 | 대전된 분자 조작을 위한 방법 및 이를 위한 장치 |
KR101563197B1 (ko) * | 2007-09-14 | 2015-10-26 | 카디날 씨지 컴퍼니 | 관리 용이한 코팅 및 이의 제조방법 |
US7756251B2 (en) * | 2007-09-28 | 2010-07-13 | Brigham Young Univers ity | X-ray radiation window with carbon nanotube frame |
US8498381B2 (en) | 2010-10-07 | 2013-07-30 | Moxtek, Inc. | Polymer layer on X-ray window |
US20100285271A1 (en) * | 2007-09-28 | 2010-11-11 | Davis Robert C | Carbon nanotube assembly |
US9305735B2 (en) | 2007-09-28 | 2016-04-05 | Brigham Young University | Reinforced polymer x-ray window |
FR2922559B1 (fr) * | 2007-10-23 | 2010-09-17 | Commissariat Energie Atomique | Procede de realisation d'un revetement en carbone amorphe hydrogene |
US20100239828A1 (en) * | 2009-03-19 | 2010-09-23 | Cornaby Sterling W | Resistively heated small planar filament |
US8247971B1 (en) | 2009-03-19 | 2012-08-21 | Moxtek, Inc. | Resistively heated small planar filament |
US7983394B2 (en) * | 2009-12-17 | 2011-07-19 | Moxtek, Inc. | Multiple wavelength X-ray source |
JP5459504B2 (ja) * | 2010-07-16 | 2014-04-02 | 三菱マテリアル株式会社 | ダイヤモンド被覆切削工具 |
US8526574B2 (en) | 2010-09-24 | 2013-09-03 | Moxtek, Inc. | Capacitor AC power coupling across high DC voltage differential |
US8804910B1 (en) | 2011-01-24 | 2014-08-12 | Moxtek, Inc. | Reduced power consumption X-ray source |
US8750458B1 (en) | 2011-02-17 | 2014-06-10 | Moxtek, Inc. | Cold electron number amplifier |
US8929515B2 (en) | 2011-02-23 | 2015-01-06 | Moxtek, Inc. | Multiple-size support for X-ray window |
US9076628B2 (en) | 2011-05-16 | 2015-07-07 | Brigham Young University | Variable radius taper x-ray window support structure |
US8989354B2 (en) | 2011-05-16 | 2015-03-24 | Brigham Young University | Carbon composite support structure |
US9174412B2 (en) | 2011-05-16 | 2015-11-03 | Brigham Young University | High strength carbon fiber composite wafers for microfabrication |
US8761344B2 (en) | 2011-12-29 | 2014-06-24 | Moxtek, Inc. | Small x-ray tube with electron beam control optics |
DE102012110321A1 (de) * | 2012-10-29 | 2014-04-30 | Dr. Ing. H.C. F. Porsche Aktiengesellschaft | System zum Untersuchen von Motorenöl |
US9173623B2 (en) | 2013-04-19 | 2015-11-03 | Samuel Soonho Lee | X-ray tube and receiver inside mouth |
EP3541762B1 (de) | 2016-11-17 | 2022-03-02 | Cardinal CG Company | Statisch-dissipative beschichtungstechnologie |
CN113774479B (zh) * | 2021-09-14 | 2022-06-14 | 太原理工大学 | 一种同质/异质混合外延生长大尺寸单晶金刚石的制备方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3828190A (en) * | 1969-01-17 | 1974-08-06 | Measurex Corp | Detector assembly |
US4178509A (en) * | 1978-06-02 | 1979-12-11 | The Bendix Corporation | Sensitivity proportional counter window |
DE3070833D1 (en) * | 1980-09-19 | 1985-08-08 | Ibm Deutschland | Structure with a silicon body that presents an aperture and method of making this structure |
US4434188A (en) * | 1981-12-17 | 1984-02-28 | National Institute For Researches In Inorganic Materials | Method for synthesizing diamond |
US4486286A (en) * | 1982-09-28 | 1984-12-04 | Nerken Research Corp. | Method of depositing a carbon film on a substrate and products obtained thereby |
CA1235087A (en) * | 1983-11-28 | 1988-04-12 | Akio Hiraki | Diamond-like thin film and method for making the same |
US4698256A (en) * | 1984-04-02 | 1987-10-06 | American Cyanamid Company | Articles coated with adherent diamondlike carbon films |
SE442305B (sv) * | 1984-06-27 | 1985-12-16 | Santrade Ltd | Forfarande for kemisk gasutfellning (cvd) for framstellning av en diamantbelagd sammansatt kropp samt anvendning av kroppen |
SE453474B (sv) * | 1984-06-27 | 1988-02-08 | Santrade Ltd | Kompoundkropp belagd med skikt av polykristallin diamant |
EP0221531A3 (de) * | 1985-11-06 | 1992-02-19 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Isoliertes gut wärmeleitendes Substrat und sein Herstellungsverfahren |
WO1987003307A1 (en) * | 1985-11-25 | 1987-06-04 | Showa Denko Kabushiki Kaisha | Process for synthesizing diamond |
US5225275A (en) * | 1986-07-11 | 1993-07-06 | Kyocera Corporation | Method of producing diamond films |
US4859490A (en) * | 1986-07-23 | 1989-08-22 | Sumitomo Electric Industries, Ltd. | Method for synthesizing diamond |
US4777090A (en) * | 1986-11-03 | 1988-10-11 | Ovonic Synthetic Materials Company | Coated article and method of manufacturing the article |
US5271971A (en) * | 1987-03-30 | 1993-12-21 | Crystallume | Microwave plasma CVD method for coating a substrate with high thermal-conductivity diamond material |
US4809876A (en) * | 1987-08-27 | 1989-03-07 | Aluminum Company Of America | Container body having improved gas barrier properties |
US4933557A (en) * | 1988-06-06 | 1990-06-12 | Brigham Young University | Radiation detector window structure and method of manufacturing thereof |
JPH02141494A (ja) * | 1988-07-30 | 1990-05-30 | Kobe Steel Ltd | ダイヤモンド気相合成装置 |
-
1989
- 1989-10-21 JP JP1274774A patent/JPH02199099A/ja active Pending
- 1989-10-23 AT AT89310880T patent/ATE98702T1/de not_active IP Right Cessation
- 1989-10-23 DE DE89310880T patent/DE68911469T2/de not_active Expired - Lifetime
- 1989-10-23 EP EP89310880A patent/EP0365366B1/de not_active Expired - Lifetime
-
1994
- 1994-05-05 US US08/238,989 patent/US5607723A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH02199099A (ja) | 1990-08-07 |
DE68911469T2 (de) | 1994-04-14 |
EP0365366A1 (de) | 1990-04-25 |
EP0365366B1 (de) | 1993-12-15 |
DE68911469D1 (de) | 1994-01-27 |
US5607723A (en) | 1997-03-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |