DE3884756D1 - Verfahren zur herstellung eines dünnen films von basismetall und dessen verwendung. - Google Patents

Verfahren zur herstellung eines dünnen films von basismetall und dessen verwendung.

Info

Publication number
DE3884756D1
DE3884756D1 DE88904615T DE3884756T DE3884756D1 DE 3884756 D1 DE3884756 D1 DE 3884756D1 DE 88904615 T DE88904615 T DE 88904615T DE 3884756 T DE3884756 T DE 3884756T DE 3884756 D1 DE3884756 D1 DE 3884756D1
Authority
DE
Germany
Prior art keywords
producing
thin film
base metal
metal
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88904615T
Other languages
English (en)
Other versions
DE3884756T2 (de
Inventor
Munehiro Tabata
Chiharu Hayashi
Yasuhito Isozaki
Kazuyuki Okano
Yo Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62122948A external-priority patent/JP2702713B2/ja
Priority claimed from JP62211999A external-priority patent/JPH01159381A/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE3884756D1 publication Critical patent/DE3884756D1/de
Publication of DE3884756T2 publication Critical patent/DE3884756T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
DE88904615T 1987-05-20 1988-05-20 Verfahren zur herstellung eines dünnen films von basismetall und dessen verwendung. Expired - Fee Related DE3884756T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62122948A JP2702713B2 (ja) 1987-05-20 1987-05-20 卑金属薄膜の製造方法
JP62211999A JPH01159381A (ja) 1987-08-26 1987-08-26 卑金属薄膜の製造方法
PCT/JP1988/000478 WO1988009395A1 (en) 1987-05-20 1988-05-20 Process for preparing thin film of base metal and application of the same

Publications (2)

Publication Number Publication Date
DE3884756D1 true DE3884756D1 (de) 1993-11-11
DE3884756T2 DE3884756T2 (de) 1994-05-05

Family

ID=26459986

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88904615T Expired - Fee Related DE3884756T2 (de) 1987-05-20 1988-05-20 Verfahren zur herstellung eines dünnen films von basismetall und dessen verwendung.

Country Status (4)

Country Link
US (1) US4985071A (de)
EP (1) EP0316452B1 (de)
DE (1) DE3884756T2 (de)
WO (1) WO1988009395A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2999854B2 (ja) * 1991-05-18 2000-01-17 株式会社堀場製作所 水素センサ、ガスセンサ用またはｐＨ応答用金属薄膜製造方法
DE4304679C2 (de) * 1992-02-17 1996-03-21 Mitsubishi Electric Corp Verfahren zur Herstellung einer dünnen dielektrischen Schicht eines Oxid-Systems unter Verwendung des CVD-Verfahrens
US5312582A (en) * 1993-02-04 1994-05-17 Institute Of Gas Technology Porous structures from solid solutions of reduced oxides
EP0629998A2 (de) * 1993-06-18 1994-12-21 International Business Machines Corporation Magnetoresistiver Film, Verfahren zu seiner Herstellung und magnetoresistiver Sensor
US20070253140A1 (en) * 2006-04-28 2007-11-01 Randall Michael S Base metal electrode multilayer capacitor with localized oxidizing source
DE102008009676A1 (de) * 2008-02-18 2009-08-27 Siemens Aktiengesellschaft Strahlungswandler und Verfahren zur Herstellung eines Strahlungswandlers
JP6313474B2 (ja) * 2015-01-06 2018-04-18 株式会社フジクラ 導体層の製造方法及び配線基板

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB964913A (en) * 1961-07-06 1964-07-29 Henri Bernard Beer A method of chemically plating base layers with precious metals
US3622367A (en) * 1970-03-24 1971-11-23 Mobil Oil Corp Contact deposition of platinum and other metals
US3914517A (en) * 1971-02-23 1975-10-21 Owens Illinois Inc Method of forming a conductively coated crystalline glass article and product produced thereby
US4077854A (en) * 1972-10-02 1978-03-07 The Bendix Corporation Method of manufacture of solderable thin film microcircuit with stabilized resistive films
US4140817A (en) * 1977-11-04 1979-02-20 Bell Telephone Laboratories, Incorporated Thick film resistor circuits
IN153057B (de) * 1978-09-21 1984-05-26 British Petroleum Co
JPS5810880B2 (ja) * 1979-08-30 1983-02-28 株式会社村田製作所 銅被膜の密着性向上方法
JPS59207887A (ja) * 1983-05-12 1984-11-26 工業技術院長 セラミツクスのメタライズ法
US4731257A (en) * 1984-12-20 1988-03-15 Mitsubishi Denki Kabushiki Kaisha Process for producing a temperature and moisture sensitive element

Also Published As

Publication number Publication date
EP0316452B1 (de) 1993-10-06
US4985071A (en) 1991-01-15
EP0316452A1 (de) 1989-05-24
DE3884756T2 (de) 1994-05-05
EP0316452A4 (de) 1989-09-11
WO1988009395A1 (en) 1988-12-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee