DE3855073D1 - Verfahren zur Herstellung von feinsten Metallfilmen und feinsten Metallbildern - Google Patents

Verfahren zur Herstellung von feinsten Metallfilmen und feinsten Metallbildern

Info

Publication number
DE3855073D1
DE3855073D1 DE3855073T DE3855073T DE3855073D1 DE 3855073 D1 DE3855073 D1 DE 3855073D1 DE 3855073 T DE3855073 T DE 3855073T DE 3855073 T DE3855073 T DE 3855073T DE 3855073 D1 DE3855073 D1 DE 3855073D1
Authority
DE
Germany
Prior art keywords
finest metal
production
finest
images
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3855073T
Other languages
English (en)
Other versions
DE3855073T2 (de
Inventor
Kazufumi Ogawa
Hideharu Tamura
Norihisa Mino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP32310387A external-priority patent/JPH0781189B2/ja
Priority claimed from JP63243008A external-priority patent/JPH0756867B2/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE3855073D1 publication Critical patent/DE3855073D1/de
Application granted granted Critical
Publication of DE3855073T2 publication Critical patent/DE3855073T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE3855073T 1987-12-21 1988-12-21 Verfahren zur Herstellung von feinsten Metallfilmen und feinsten Metallbildern Expired - Fee Related DE3855073T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP32310387A JPH0781189B2 (ja) 1987-12-21 1987-12-21 金属超薄膜の製造方法およびパターン形成方法
JP63243008A JPH0756867B2 (ja) 1988-09-28 1988-09-28 金属超薄膜およびその製造法

Publications (2)

Publication Number Publication Date
DE3855073D1 true DE3855073D1 (de) 1996-04-11
DE3855073T2 DE3855073T2 (de) 1996-10-02

Family

ID=26536034

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3855073T Expired - Fee Related DE3855073T2 (de) 1987-12-21 1988-12-21 Verfahren zur Herstellung von feinsten Metallfilmen und feinsten Metallbildern

Country Status (3)

Country Link
US (1) US4996075A (de)
EP (1) EP0322233B1 (de)
DE (1) DE3855073T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5389496A (en) * 1987-03-06 1995-02-14 Rohm And Haas Company Processes and compositions for electroless metallization
US5057339A (en) * 1988-12-29 1991-10-15 Matsushita Electric Industrial Co., Ltd. Metallized polyacetylene-type or polyacene-type ultralong conjugated polymers and process for producing the same
EP0773477B1 (de) * 1990-09-21 2001-05-30 Dai Nippon Printing Co., Ltd. Verfahren zur Herstellung einer Phasenschieber-Fotomaske
JPH05226833A (ja) * 1992-02-17 1993-09-03 Toshiba Corp 配線板の製造方法
TW280837B (de) 1992-06-29 1996-07-11 Philips Electronics Nv
US5273788A (en) * 1992-07-20 1993-12-28 The University Of Utah Preparation of diamond and diamond-like thin films
US5352485A (en) * 1993-04-08 1994-10-04 Case Western Reserve University Synthesis of metal oxide thin films
BE1007610A3 (nl) 1993-10-11 1995-08-22 Philips Electronics Nv Werkwijze voor het stroomloos aanbrengen van een metaalpatroon op een elektrisch isolerend substraat.
US20020079487A1 (en) * 2000-10-12 2002-06-27 G. Ramanath Diffusion barriers comprising a self-assembled monolayer
US7229847B2 (en) * 2002-03-15 2007-06-12 Lucent Technologies Inc. Forming electrical contacts to a molecular layer
US7026716B2 (en) * 2003-06-06 2006-04-11 Rensselaer Polytechnic Institute Self-assembled sub-nanolayers as interfacial adhesion enhancers and diffusion barriers
EP1693484A3 (de) * 2005-02-15 2007-06-20 Rohm and Haas Electronic Materials, L.L.C. Plattierungsverfahren
KR100942506B1 (ko) * 2007-12-11 2010-02-12 한국식품연구원 광학적 특성을 이용한 분석용 센서를 위한 기판 제조 방법및 그 기판
KR20100091663A (ko) * 2009-02-11 2010-08-19 삼성전자주식회사 표면개질제, 이를 사용하여 제조된 적층 구조, 그 구조의 제조방법 및 이를 포함하는 트랜지스터
US8536056B2 (en) * 2011-08-22 2013-09-17 Nanya Technology Corporation Method of forming conductive pattern
EP2644744A1 (de) 2012-03-29 2013-10-02 Atotech Deutschland GmbH Verfahren zur Förderung der Haftung zwischen dielektrischen Substraten und Metallschichten

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1582860A (en) * 1977-02-23 1981-01-14 Ici Ltd Device
US4539061A (en) * 1983-09-07 1985-09-03 Yeda Research And Development Co., Ltd. Process for the production of built-up films by the stepwise adsorption of individual monolayers

Also Published As

Publication number Publication date
EP0322233A3 (en) 1990-07-18
EP0322233B1 (de) 1996-03-06
EP0322233A2 (de) 1989-06-28
US4996075A (en) 1991-02-26
DE3855073T2 (de) 1996-10-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee