ATE204099T1 - Verfahren zur herstellung eines kristallinen gold-filmes - Google Patents

Verfahren zur herstellung eines kristallinen gold-filmes

Info

Publication number
ATE204099T1
ATE204099T1 AT92107818T AT92107818T ATE204099T1 AT E204099 T1 ATE204099 T1 AT E204099T1 AT 92107818 T AT92107818 T AT 92107818T AT 92107818 T AT92107818 T AT 92107818T AT E204099 T1 ATE204099 T1 AT E204099T1
Authority
AT
Austria
Prior art keywords
producing
gold film
gold
crystalline gold
crystalline
Prior art date
Application number
AT92107818T
Other languages
English (en)
Inventor
Tsutomu Ikeda
Hideo Kato
Masahiko Miyamoto
Ken Eguchi
Taichi Sugimoto
Haruki Kawada
Kiyoshi Takimoto
Toshihiko Takeda
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Priority claimed from JP11617192A external-priority patent/JP3192472B2/ja
Application granted granted Critical
Publication of ATE204099T1 publication Critical patent/ATE204099T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/1472—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the form

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Molecular Biology (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemically Coating (AREA)
  • Laminated Bodies (AREA)
AT92107818T 1991-05-09 1992-05-08 Verfahren zur herstellung eines kristallinen gold-filmes ATE204099T1 (de)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP13217691 1991-05-09
JP21305591 1991-07-31
JP21305491 1991-07-31
JP27889091 1991-10-01
JP30923891 1991-11-25
JP31082991 1991-11-26
JP31254691 1991-11-27
JP11617192A JP3192472B2 (ja) 1991-05-09 1992-05-08 金結晶薄膜の形成方法

Publications (1)

Publication Number Publication Date
ATE204099T1 true ATE204099T1 (de) 2001-08-15

Family

ID=27573051

Family Applications (1)

Application Number Title Priority Date Filing Date
AT92107818T ATE204099T1 (de) 1991-05-09 1992-05-08 Verfahren zur herstellung eines kristallinen gold-filmes

Country Status (4)

Country Link
US (1) US5320703A (de)
EP (1) EP0513693B1 (de)
AT (1) ATE204099T1 (de)
DE (1) DE69231985T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5503942A (en) * 1993-04-30 1996-04-02 Honda Giken Kogyo Kabushiki Kaisha Inorganic skin film
US5861227A (en) * 1994-09-29 1999-01-19 Canon Kabushiki Kaisha Methods and manufacturing electron-emitting device, electron source, and image-forming apparatus
JP3241251B2 (ja) 1994-12-16 2001-12-25 キヤノン株式会社 電子放出素子の製造方法及び電子源基板の製造方法
JPH0992616A (ja) * 1995-07-18 1997-04-04 Canon Inc メンブレン及びマスク、これを用いた露光装置やデバイス生産方法
US5616165A (en) * 1995-08-25 1997-04-01 E. I. Du Pont De Nemours And Company Method for making gold powders by aerosol decomposition
US20020045103A1 (en) * 1995-10-31 2002-04-18 California Institute Of Technology Reduction of feature size using photosensitive polymers
JPH10188375A (ja) * 1996-12-17 1998-07-21 Canon Inc 記録媒体
JP3352385B2 (ja) 1997-03-21 2002-12-03 キヤノン株式会社 電子源基板およびそれを用いた電子装置の製造方法
CN1658936A (zh) * 2002-04-02 2005-08-24 纳幕尔杜邦公司 生长晶体中使用的装置和方法
US7592001B2 (en) * 2004-08-02 2009-09-22 University Of Florida Research Foundation, Inc. High aspect ratio metal particles and methods for forming same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5554509A (en) * 1978-10-18 1980-04-21 Nippon Mining Co Ltd Production of fine gold powder
JPS5638406A (en) * 1979-09-03 1981-04-13 Sumitomo Metal Mining Co Ltd Manufacture of gold powder
CN1003524B (zh) * 1985-10-14 1989-03-08 株式会社日立制作所 无电浸镀金溶液
JPS635272A (ja) * 1986-06-25 1988-01-11 Fujitsu Ten Ltd 出力異常検出機能付きロジツク回路装置
US5041195A (en) * 1988-11-17 1991-08-20 Physical Sciences Inc. Gold electrocatalyst, methods for preparing it, electrodes prepared therefrom and methods of using them

Also Published As

Publication number Publication date
EP0513693B1 (de) 2001-08-08
DE69231985T2 (de) 2001-12-20
EP0513693A1 (de) 1992-11-19
US5320703A (en) 1994-06-14
DE69231985D1 (de) 2001-09-13

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