DE69026059D1 - Verfahren zur Herstellung eines SiO2 Films mit einer Polysiloxan/Ozonreaktion - Google Patents

Verfahren zur Herstellung eines SiO2 Films mit einer Polysiloxan/Ozonreaktion

Info

Publication number
DE69026059D1
DE69026059D1 DE69026059T DE69026059T DE69026059D1 DE 69026059 D1 DE69026059 D1 DE 69026059D1 DE 69026059 T DE69026059 T DE 69026059T DE 69026059 T DE69026059 T DE 69026059T DE 69026059 D1 DE69026059 D1 DE 69026059D1
Authority
DE
Germany
Prior art keywords
polysiloxane
production
sio2 film
ozone reaction
ozone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69026059T
Other languages
English (en)
Other versions
DE69026059T2 (de
Inventor
Kazuo Maeda
Noboru Tokumasu
Yuko Nishimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcan Tech Co Inc
Semiconductor Process Laboratory Co Ltd
Canon Marketing Japan Inc
Original Assignee
Alcan Tech Co Inc
Semiconductor Process Laboratory Co Ltd
Canon Marketing Japan Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcan Tech Co Inc, Semiconductor Process Laboratory Co Ltd, Canon Marketing Japan Inc filed Critical Alcan Tech Co Inc
Application granted granted Critical
Publication of DE69026059D1 publication Critical patent/DE69026059D1/de
Publication of DE69026059T2 publication Critical patent/DE69026059T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31608—Deposition of SiO2
    • H01L21/31612—Deposition of SiO2 on a silicon body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31625—Deposition of boron or phosphorus doped silicon oxide, e.g. BSG, PSG, BPSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69026059T 1989-12-27 1990-12-19 Verfahren zur Herstellung eines SiO2 Films mit einer Polysiloxan/Ozonreaktion Expired - Fee Related DE69026059T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1339071A JPH03198338A (ja) 1989-12-27 1989-12-27 気相成長膜の形成方法および半導体装置

Publications (2)

Publication Number Publication Date
DE69026059D1 true DE69026059D1 (de) 1996-04-25
DE69026059T2 DE69026059T2 (de) 1996-08-22

Family

ID=18323985

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69026059T Expired - Fee Related DE69026059T2 (de) 1989-12-27 1990-12-19 Verfahren zur Herstellung eines SiO2 Films mit einer Polysiloxan/Ozonreaktion

Country Status (4)

Country Link
US (1) US5231058A (de)
EP (1) EP0436185B1 (de)
JP (1) JPH03198338A (de)
DE (1) DE69026059T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0719777B2 (ja) * 1990-08-10 1995-03-06 株式会社半導体プロセス研究所 半導体装置の製造方法
US5043002A (en) * 1990-08-16 1991-08-27 Corning Incorporated Method of making fused silica by decomposing siloxanes
JPH04152640A (ja) * 1990-10-17 1992-05-26 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型半導体装置の作製方法
EP0497541A1 (de) * 1991-01-28 1992-08-05 Kawasaki Steel Corporation Halbleiterbauelement mit einer Bor-Phosphorsilikat-Glasschicht und ihr Herstellungsverfahren
JP2588447B2 (ja) * 1991-06-29 1997-03-05 信越石英株式会社 エキシマレーザー用石英ガラス部材の製造方法
DE4202652C2 (de) * 1992-01-30 1996-03-28 Fraunhofer Ges Forschung Verfahren zum Aufbringen einer UV- und/oder elektronenstrahlempfindlichen Lackschicht
EP0572704B1 (de) * 1992-06-05 2000-04-19 Semiconductor Process Laboratory Co., Ltd. Verfahren zur Herstellung einer Halbleiteranordnung mittels eines Verfahren zur Reformierung einer Isolationsschicht die bei niederiger Temperatur durch CVD hergestellt ist
US5387546A (en) * 1992-06-22 1995-02-07 Canon Sales Co., Inc. Method for manufacturing a semiconductor device
EP0582724A1 (de) * 1992-08-04 1994-02-16 Siemens Aktiengesellschaft Verfahren zur lokal und global planarisierenden CVD-Abscheidung von SiO2-Schichten auf strukturierten Siliziumsubstraten
EP0642167A3 (de) * 1993-08-05 1995-06-28 Matsushita Electronics Corp Halbleiterbauelement mit Kondensator und Herstellungsverfahren.
US5489553A (en) * 1995-05-25 1996-02-06 Industrial Technology Research Institute HF vapor surface treatment for the 03 teos gap filling deposition
US6489255B1 (en) * 1995-06-05 2002-12-03 International Business Machines Corporation Low temperature/low dopant oxide glass film
US6489213B1 (en) 1996-01-05 2002-12-03 Integrated Device Technology, Inc. Method for manufacturing semiconductor device containing a silicon-rich layer
AU6332296A (en) * 1996-02-02 1997-08-22 Micron Technology, Inc. Reducing fixed charge in semiconductor device layers
US5710079A (en) * 1996-05-24 1998-01-20 Lsi Logic Corporation Method and apparatus for forming dielectric films
US6013583A (en) * 1996-06-25 2000-01-11 International Business Machines Corporation Low temperature BPSG deposition process
US5990513A (en) * 1996-10-08 1999-11-23 Ramtron International Corporation Yield enhancement technique for integrated circuit processing to reduce effects of undesired dielectric moisture retention and subsequent hydrogen out-diffusion
AU4802297A (en) * 1996-10-08 1998-05-05 Corning Incorporated Method of inhibiting gelling of siloxane feedstocks and a gel inhibited feedstock
US6159870A (en) * 1998-12-11 2000-12-12 International Business Machines Corporation Borophosphosilicate glass incorporated with fluorine for low thermal budget gap fill
US6165905A (en) * 1999-01-20 2000-12-26 Philips Electronics, North America Corp. Methods for making reliable via structures having hydrophobic inner wall surfaces
US6242299B1 (en) 1999-04-01 2001-06-05 Ramtron International Corporation Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrode
US6465044B1 (en) * 1999-07-09 2002-10-15 Silicon Valley Group, Thermal Systems Llp Chemical vapor deposition of silicon oxide films using alkylsiloxane oligomers with ozone
EP1123991A3 (de) * 2000-02-08 2002-11-13 Asm Japan K.K. Materialen mit niedrieger Dielektrizitätskonstante und Verfahren
US6905981B1 (en) 2000-11-24 2005-06-14 Asm Japan K.K. Low-k dielectric materials and processes
US6572923B2 (en) * 2001-01-12 2003-06-03 The Boc Group, Inc. Asymmetric organocyclosiloxanes and their use for making organosilicon polymer low-k dielectric film
US8723654B2 (en) 2010-07-09 2014-05-13 Cypress Semiconductor Corporation Interrupt generation and acknowledgment for RFID
US9846664B2 (en) 2010-07-09 2017-12-19 Cypress Semiconductor Corporation RFID interface and interrupt
US9092582B2 (en) 2010-07-09 2015-07-28 Cypress Semiconductor Corporation Low power, low pin count interface for an RFID transponder

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4168330A (en) * 1977-10-13 1979-09-18 Rca Corporation Method of depositing a silicon oxide layer
CA1333146C (en) * 1987-04-10 1994-11-22 Andre Lagendijk Method of forming silicon dioxide glass films
US5028566A (en) * 1987-04-10 1991-07-02 Air Products And Chemicals, Inc. Method of forming silicon dioxide glass films
JP2624254B2 (ja) * 1987-05-22 1997-06-25 東京応化工業株式会社 シリカ系被膜の膜質改善方法
JPH0682650B2 (ja) * 1987-06-10 1994-10-19 東京エレクトロン株式会社 酸化膜形成方法
JPH07120734B2 (ja) * 1987-09-25 1995-12-20 日本電気株式会社 半導体装置の製造方法
JPH01212442A (ja) * 1988-02-19 1989-08-25 Fujitsu Ltd 気相成長方法
US4894352A (en) * 1988-10-26 1990-01-16 Texas Instruments Inc. Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride

Also Published As

Publication number Publication date
JPH03198338A (ja) 1991-08-29
EP0436185A1 (de) 1991-07-10
EP0436185B1 (de) 1996-03-20
US5231058A (en) 1993-07-27
DE69026059T2 (de) 1996-08-22

Similar Documents

Publication Publication Date Title
DE69026059T2 (de) Verfahren zur Herstellung eines SiO2 Films mit einer Polysiloxan/Ozonreaktion
DE69016980D1 (de) Verfahren zur Herstellung eines CVD SiO2 Films mit einer TEOS-O3 Reaktion.
DE69305318D1 (de) Verfahren zur Herstellung eines Siliziumoxid-Filmes
DE69204386T2 (de) Verfahren zur Herstellung eines polykristallinen Siliziumfilmes.
DE69301229D1 (de) Verfahren zur Herstellung einer Siliciumdioxidschicht
DE69032568D1 (de) Verfahren zur Herstellung einer dekorativen Folie
DE69423143T2 (de) Verfahren zur Herstellung einer Doppelschichtfolie
DE69120326D1 (de) Verfahren zur Herstellung eines Siliziumeinkristalles
DE69214213D1 (de) Verfahren zur Herstellung eines porösen Polysiloxan-Produkts
DE69423991T2 (de) Verfahren zur Herstellung eines Siliciumoxidfilmes
DE69125118T2 (de) Verfahren zur Herstellung eines Diamant-Überzuges
DE59304593D1 (de) Verfahren zur Herstellung eines Bauelementes mit porösem Silizium
DE68920417D1 (de) Verfahren zur Herstellung eines kohlenstoffhaltigen Films.
DE3752094T2 (de) Verfahren zur Herstellung eines ferroelektrischen Film
DE69205057D1 (de) Verfahren zur Herstellung von Überzugsfilmen.
DE3887907T2 (de) Verfahren zur Herstellung eines hochmodularen Films.
DE69227804T2 (de) Verfahren zur Herstellung von Silikongummifilmen
DE69032340D1 (de) Verfahren zur Herstellung einer Halbleiterdünnschicht
DE69207068T2 (de) Verfahren zur Herstellung von Organopolysiloxan
DE69301035T2 (de) Verfahren zur Herstellung eines Silizium-Einkristalls
DE69321777T2 (de) Verfahren zur Herstellung einer Polyesterfolie
DE69403689T2 (de) Verfahren zur Herstellung eines Silicon-Harzes
DE69224592T2 (de) Verfahren zur Herstellung einer Flüssigkristallorientierungsschicht
DE69117667T2 (de) Verfahren zur Herstellung eines Bandkabels
DE69123906D1 (de) Verfahren zur Herstellung eines molekularen Schichtmaterials

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee