JPS569210A - Method for forming thermally oxidized film - Google Patents
Method for forming thermally oxidized filmInfo
- Publication number
- JPS569210A JPS569210A JP8515979A JP8515979A JPS569210A JP S569210 A JPS569210 A JP S569210A JP 8515979 A JP8515979 A JP 8515979A JP 8515979 A JP8515979 A JP 8515979A JP S569210 A JPS569210 A JP S569210A
- Authority
- JP
- Japan
- Prior art keywords
- thermally oxidized
- film
- thickness
- oxidized film
- accuracy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Silicon Compounds (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To grow a thermally oxidized film of a desired thickness on the surface of an Si substrate with accuracy by controlling an oxidizing atmosphere to a dew point lower than a specified temp.
CONSTITUTION: When the surface of an Si substrate is thermally oxidized to form SiO2 having ≤50Å thickness, the oxidizing atmoshpere is filled with oxygen of ≤ -70°C dew point. By this method the thickness of an effective early oxidized film is made about zero, and while controlling the thickness with accuracy, an SiO2 film can be grown by thermal oxidation. By diluting oxygen in the oxidizing atmosphere with an inert gas such as Ar, the SiO2 film can be grown even at a high temp. with accuracy.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8515979A JPS569210A (en) | 1979-07-04 | 1979-07-04 | Method for forming thermally oxidized film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8515979A JPS569210A (en) | 1979-07-04 | 1979-07-04 | Method for forming thermally oxidized film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS569210A true JPS569210A (en) | 1981-01-30 |
Family
ID=13850883
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8515979A Pending JPS569210A (en) | 1979-07-04 | 1979-07-04 | Method for forming thermally oxidized film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS569210A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4377605A (en) * | 1980-05-19 | 1983-03-22 | Fujitsu Limited | Method for forming an insulating layer on a polycrystalline silicon layer of a semiconductor device using a two-step thermal oxidation technique |
JPH04351684A (en) * | 1991-05-29 | 1992-12-07 | Tokyo Ohka Kogyo Co Ltd | Protective film |
-
1979
- 1979-07-04 JP JP8515979A patent/JPS569210A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4377605A (en) * | 1980-05-19 | 1983-03-22 | Fujitsu Limited | Method for forming an insulating layer on a polycrystalline silicon layer of a semiconductor device using a two-step thermal oxidation technique |
JPH04351684A (en) * | 1991-05-29 | 1992-12-07 | Tokyo Ohka Kogyo Co Ltd | Protective film |
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