JPS569210A - Method for forming thermally oxidized film - Google Patents

Method for forming thermally oxidized film

Info

Publication number
JPS569210A
JPS569210A JP8515979A JP8515979A JPS569210A JP S569210 A JPS569210 A JP S569210A JP 8515979 A JP8515979 A JP 8515979A JP 8515979 A JP8515979 A JP 8515979A JP S569210 A JPS569210 A JP S569210A
Authority
JP
Japan
Prior art keywords
thermally oxidized
film
thickness
oxidized film
accuracy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8515979A
Other languages
Japanese (ja)
Inventor
Tatsuo Fuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8515979A priority Critical patent/JPS569210A/en
Publication of JPS569210A publication Critical patent/JPS569210A/en
Pending legal-status Critical Current

Links

Landscapes

  • Silicon Compounds (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To grow a thermally oxidized film of a desired thickness on the surface of an Si substrate with accuracy by controlling an oxidizing atmosphere to a dew point lower than a specified temp.
CONSTITUTION: When the surface of an Si substrate is thermally oxidized to form SiO2 having ≤50Å thickness, the oxidizing atmoshpere is filled with oxygen of ≤ -70°C dew point. By this method the thickness of an effective early oxidized film is made about zero, and while controlling the thickness with accuracy, an SiO2 film can be grown by thermal oxidation. By diluting oxygen in the oxidizing atmosphere with an inert gas such as Ar, the SiO2 film can be grown even at a high temp. with accuracy.
COPYRIGHT: (C)1981,JPO&Japio
JP8515979A 1979-07-04 1979-07-04 Method for forming thermally oxidized film Pending JPS569210A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8515979A JPS569210A (en) 1979-07-04 1979-07-04 Method for forming thermally oxidized film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8515979A JPS569210A (en) 1979-07-04 1979-07-04 Method for forming thermally oxidized film

Publications (1)

Publication Number Publication Date
JPS569210A true JPS569210A (en) 1981-01-30

Family

ID=13850883

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8515979A Pending JPS569210A (en) 1979-07-04 1979-07-04 Method for forming thermally oxidized film

Country Status (1)

Country Link
JP (1) JPS569210A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4377605A (en) * 1980-05-19 1983-03-22 Fujitsu Limited Method for forming an insulating layer on a polycrystalline silicon layer of a semiconductor device using a two-step thermal oxidation technique
JPH04351684A (en) * 1991-05-29 1992-12-07 Tokyo Ohka Kogyo Co Ltd Protective film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4377605A (en) * 1980-05-19 1983-03-22 Fujitsu Limited Method for forming an insulating layer on a polycrystalline silicon layer of a semiconductor device using a two-step thermal oxidation technique
JPH04351684A (en) * 1991-05-29 1992-12-07 Tokyo Ohka Kogyo Co Ltd Protective film

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